Page 86 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPI90N06S4L04AKSA1
Infineon Technologies

MOSFET N-CH 60V 90A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,472
SI5855DC-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 2.7A 1206-8

Package: 8-SMD, Flat Lead

Stock70,116
APT20M19JVR
Microsemi Corporation

MOSFET N-CH 200V 112A SOT-227

Package: SOT-227-4, miniBLOC

Stock6,800
BUK9611-55A,118
NXP

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,104
NDS352P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 0.85A SSOT3

Package: TO-236-3, SC-59, SOT-23-3

Stock1,062,456
IRF1310NSPBF
Infineon Technologies

MOSFET N-CH 100V 42A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock84,000
APTM100SK33T1G
Microsemi Corporation

MOSFET N-CH 1000V 23A SP1

Package: SP1

Stock3,056
EPC8003ENGR
EPC

TRANS GAN 100V 2.5A BUMPED DIE

Package: Die

Stock2,912
AON4703
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 3.4A 8DFN

Package: 8-SMD, Flat Lead

Stock1,569,012
DMN3042L-13
Diodes Incorporated

MOSFET N-CH 30V 5.8A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock5,072
APT26F120L
Microsemi Corporation

MOSFET N-CH 1200V 27A TO-264

Package: TO-264-3, TO-264AA

Stock7,408
IXFH42N60P3
IXYS

MOSFET N-CH 600V 42A TO247

Package: TO-247-3

Stock7,584
IRLHM620TRPBF
Infineon Technologies

MOSFET N-CH 20V 26A PQFN

Package: 8-PowerTDFN

Stock7,520
SCT3080ALGC11
Rohm Semiconductor

MOSFET N-CH 650V 30A TO247

Package: TO-247-3

Stock6,256
STL100N6LF6
STMicroelectronics

MOSFET N CH 60V 100A PWRFLAT 5X6

Package: 8-PowerSMD, Flat Leads

Stock22,086
VN0606L-G
Microchip Technology

MOSFET N-CH 60V 330MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock23,256
FQT4N20LTF
Fairchild/ON Semiconductor

MOSFET N-CH 200V 0.85A SOT-223

Package: TO-261-4, TO-261AA

Stock2,121,468
EPC2001
EPC

TRANS GAN 100V 25A BUMPED DIE

Package: Die

Stock223,170
AUIRFR5410-IR
International Rectifier

AUTOMOTIVE HEXFET P CHANNEL

Package: -

Request a Quote
DMTH10H032LFVW-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V PowerDI33

Package: -

Stock8,970

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPI90N06S4L04AKSA1	Infineon Technologies	MOSFET N-CH 60V 90A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,472	MOSFET (Metal Oxide)	60V	90A (Tc)	4.5V, 10V	2.2V @ 90µA	170nC @ 10V	13000pF @ 25V	±16V	-	150W (Tc)	3.7 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
SI5855DC-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 2.7A 1206-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock70,116	MOSFET (Metal Oxide)	20V	2.7A (Ta)	1.8V, 4.5V	1V @ 250µA	7.7nC @ 4.5V	-	±8V	Schottky Diode (Isolated)	1.1W (Ta)	110 mOhm @ 2.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	1206-8 ChipFET?	8-SMD, Flat Lead
APT20M19JVR	Microsemi Corporation	MOSFET N-CH 200V 112A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 112A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 495nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11640pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,800	MOSFET (Metal Oxide)	200V	112A	10V	4V @ 1mA	495nC @ 10V	11640pF @ 25V	±30V	-	500W (Tc)	19 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
BUK9611-55A,118	NXP	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 166W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,104	MOSFET (Metal Oxide)	55V	75A (Tc)	4.5V, 10V	2V @ 1mA	-	4230pF @ 25V	±10V	-	166W (Tc)	10 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NDS352P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 0.85A SSOT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 850mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 350 mOhm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,062,456	MOSFET (Metal Oxide)	20V	850mA (Ta)	4.5V, 10V	2.5V @ 250µA	4nC @ 5V	125pF @ 10V	±12V	-	500mW (Ta)	350 mOhm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT-3	TO-236-3, SC-59, SOT-23-3
IRF1310NSPBF	Infineon Technologies	MOSFET N-CH 100V 42A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 160W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock84,000	MOSFET (Metal Oxide)	100V	42A (Tc)	10V	4V @ 250µA	110nC @ 10V	1900pF @ 25V	±20V	-	3.8W (Ta), 160W (Tc)	36 mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
APTM100SK33T1G	Microsemi Corporation	MOSFET N-CH 1000V 23A SP1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 23A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 396 mOhm @ 18A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	Package: SP1	Stock3,056	MOSFET (Metal Oxide)	1000V	23A	10V	5V @ 2.5mA	305nC @ 10V	7868pF @ 25V	±30V	-	390W (Tc)	396 mOhm @ 18A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
EPC8003ENGR	EPC	TRANS GAN 100V 2.5A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 50V Vgs (Max): +6V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 300 mOhm @ 500mA, 5V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: Die	Stock2,912	GaNFET (Gallium Nitride)	100V	2.5A (Ta)	5V	2.5V @ 250µA	0.32nC @ 5V	38pF @ 50V	+6V, -5V	-	-	300 mOhm @ 500mA, 5V	-40°C ~ 125°C (TJ)	Surface Mount	Die	Die
AON4703	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 20V 3.4A 8DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3x2) Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock1,569,012	MOSFET (Metal Oxide)	20V	3.4A (Ta)	1.8V, 4.5V	1V @ 250µA	6.1nC @ 4.5V	540pF @ 10V	±8V	Schottky Diode (Isolated)	1.7W (Ta)	90 mOhm @ 3.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (3x2)	8-SMD, Flat Lead
DMN3042L-13	Diodes Incorporated	MOSFET N-CH 30V 5.8A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 720mW (Ta) Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 5.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock5,072	MOSFET (Metal Oxide)	30V	5.8A (Ta)	2.5V, 10V	1.4V @ 250µA	20nC @ 10V	860pF @ 15V	±12V	-	720mW (Ta)	26.5 mOhm @ 5.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
APT26F120L	Microsemi Corporation	MOSFET N-CH 1200V 27A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,408	MOSFET (Metal Oxide)	1200V	27A (Tc)	10V	5V @ 2.5mA	300nC @ 10V	9670pF @ 25V	±30V	-	1135W (Tc)	650 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
IXFH42N60P3	IXYS	MOSFET N-CH 600V 42A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 185 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock7,584	MOSFET (Metal Oxide)	600V	42A (Tc)	10V	5V @ 4mA	78nC @ 10V	5150pF @ 25V	±30V	-	830W (Tc)	185 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IRLHM620TRPBF	Infineon Technologies	MOSFET N-CH 20V 26A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.1V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3620pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.7W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 20A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (3x3) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,520	MOSFET (Metal Oxide)	20V	26A (Ta), 40A (Tc)	2.5V, 10V	1.1V @ 50µA	78nC @ 4.5V	3620pF @ 10V	±12V	-	2.7W (Ta), 37W (Tc)	2.5 mOhm @ 20A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (3x3)	8-PowerTDFN
SCT3080ALGC11	Rohm Semiconductor	MOSFET N-CH 650V 30A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 571pF @ 500V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 134W (Tc) Rds On (Max) @ Id, Vgs: 104 mOhm @ 10A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Package: TO-247-3	Stock6,256	MOSFET (Metal Oxide)	650V	30A (Tc)	18V	5.6V @ 5mA	48nC @ 18V	571pF @ 500V	+22V, -4V	-	134W (Tc)	104 mOhm @ 10A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
STL100N6LF6	STMicroelectronics	MOSFET N CH 60V 100A PWRFLAT 5X6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.8W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock22,086	MOSFET (Metal Oxide)	60V	100A (Tc)	4.5V, 10V	2.5V @ 250µA	130nC @ 10V	8900pF @ 25V	±20V	-	4.8W (Tc)	4.5 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerSMD, Flat Leads
VN0606L-G	Microchip Technology	MOSFET N-CH 60V 330MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 330mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock23,256	MOSFET (Metal Oxide)	60V	330mA (Tj)	10V	2V @ 1mA	-	50pF @ 25V	±30V	-	1W (Tc)	3 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
FQT4N20LTF	Fairchild/ON Semiconductor	MOSFET N-CH 200V 0.85A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 850mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Tc) Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 425mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock2,121,468	MOSFET (Metal Oxide)	200V	850mA (Tc)	5V, 10V	2V @ 250µA	5.2nC @ 5V	310pF @ 25V	±20V	-	2.2W (Tc)	1.35 Ohm @ 425mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
EPC2001	EPC	TRANS GAN 100V 25A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 50V Vgs (Max): +6V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Outline (11-Solder Bar) Package / Case: Die	Package: Die	Stock223,170	GaNFET (Gallium Nitride)	100V	25A (Ta)	5V	2.5V @ 5mA	10nC @ 5V	950pF @ 50V	+6V, -5V	-	-	7 mOhm @ 25A, 5V	-40°C ~ 125°C (TJ)	Surface Mount	Die Outline (11-Solder Bar)	Die
AUIRFR5410-IR	International Rectifier	AUTOMOTIVE HEXFET P CHANNEL FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	13A (Tc)	10V	4V @ 250µA	58 nC @ 10 V	760 pF @ 25 V	±20V	-	66W (Tc)	205mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMTH10H032LFVW-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V PowerDI33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	Package: -	Stock8,970	MOSFET (Metal Oxide)	100 V	26A (Tc)	4.5V, 10V	2.5V @ 250µA	11.9 nC @ 10 V	683 pF @ 50 V	±20V	-	1.7W (Ta)	30mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN
TSM900N06CW	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 60V 6A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.8W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	6A (Tc)	4.5V, 10V	2.5V @ 250µA	11 nC @ 10 V	525 pF @ 30 V	±20V	-	7.8W (Tc)	90mOhm @ 3A, 10V	150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
CMS23P04D-HF	Comchip Technology	MOSFET P-CH 40V 23A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1004 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 31.3W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	23A (Tc)	4.5V, 10V	2.5V @ 250µA	9 nC @ 4.5 V	1004 pF @ 15 V	±20V	-	2W (Ta), 31.3W (Tc)	40mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
NVTFS6H888NLTAG	onsemi	MOSFET N-CH 80V 4.9A/14A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 15µA Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.9W (Ta), 23W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	4.9A (Ta), 14A (Tc)	4.5V, 10V	2V @ 15µA	6 nC @ 10 V	258 pF @ 40 V	±20V	-	2.9W (Ta), 23W (Tc)	50mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
CP805-CXDM4060P-WN	Central Semiconductor Corp	MOSFET P-CH 40V 6.4A DIE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 31mOhm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	6.4A (Ta)	-	3V @ 250µA	-	-	±20V	-	-	31mOhm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
NX138BKMYL	Nexperia USA Inc.	MOSFET N-CH 60V 380MA DFN1006-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 380mW (Ta), 2.8W (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 380mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-883 Package / Case: SC-101, SOT-883	Package: -	Stock119,277	MOSFET (Metal Oxide)	60 V	380mA (Ta)	-	1.5V @ 250µA	0.7 nC @ 10 V	20 pF @ 30 V	±20V	-	380mW (Ta), 2.8W (Tc)	2.3Ohm @ 380mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-883	SC-101, SOT-883
IRFP462	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	17A (Tc)	10V	4V @ 250µA	190 nC @ 10 V	4100 pF @ 25 V	±20V	-	250W (Tc)	350mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IXFY26N30X3	IXYS	MOSFET N-CH 300V 26A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock20,706	MOSFET (Metal Oxide)	300 V	26A (Tc)	10V	4.5V @ 500µA	22 nC @ 10 V	1465 pF @ 25 V	±20V	-	170W (Tc)	66mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
ISC035N10NM5LFATMA1	Infineon Technologies	OPTIMOSTM5LINEARFET100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 115µA Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 217W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	19A (Ta), 164A (Tc)	10V	3.9V @ 115µA	88 nC @ 10 V	7200 pF @ 50 V	±20V	-	3W (Ta), 217W (Tc)	3.5mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN