Page 88 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPP120N06NGAKSA1
Infineon Technologies

MOSFET N-CH 60V 75A TO-220

Package: TO-220-3

Stock3,216
SPP73N03S2L08XK
Infineon Technologies

MOSFET N-CH 30V 73A TO-220AB

Package: TO-220-3

Stock3,040
AON6780
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 30A DFN5X6

Package: 8-PowerSMD, Flat Leads

Stock1,268,700
PSMN9R5-100XS,127
NXP

MOSFET N-CH 100V 44.2A TO220F

Package: TO-220-3 Full Pack, Isolated Tab

Stock6,864
IRFD320
Vishay Siliconix

MOSFET N-CH 400V 490MA 4-DIP

Package: 4-DIP (0.300", 7.62mm)

Stock187,020
AUIRFU1010Z
Infineon Technologies

MOSFET N-CH 55V 91A IPAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,440
BSP135H6906XTSA1
Infineon Technologies

MOSFET N-CH 600V 120MA SOT223

Package: TO-261-4, TO-261AA

Stock2,640
IXFR52N30Q
IXYS

MOSFET N-CH 300V ISOPLUS247

Package: ISOPLUS247?

Stock7,472
IXFP7N80PM
IXYS

MOSFET N-CH 800V 3.5A TO-220

Package: TO-220-3

Stock2,800
NTMFS4985NFT3G
ON Semiconductor

MOSFET N-CH 30V 65A SO8FL

Package: 8-PowerTDFN

Stock2,880
APL1001J
Microsemi Corporation

MOSFET N-CH 1000V 18A SOT-227

Package: SOT-227-4, miniBLOC

Stock4,976
IRL40SC228
Infineon Technologies

MOSFET N-CH 40V 557A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock5,200
IPA60R125CPXKSA1
Infineon Technologies

MOSFET N-CH 650V 25A TO220-3

Package: TO-220-3 Full Pack

Stock8,964
SIHG47N60EF-GE3
Vishay Siliconix

MOSFET N-CH 600V 47A TO247AC

Package: TO-247-3

Stock6,080
RU1E002SPTCL
Rohm Semiconductor

MOSFET P-CH 30V 0.25A UMT3F

Package: SC-85

Stock28,848
IXFA3N120
IXYS

MOSFET N-CH 1200V 3A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,648
IXTH26P20P
IXYS

MOSFET P-CH 200V 26A TO-247

Package: TO-247-3

Stock6,288
FDP52N20
Fairchild/ON Semiconductor

MOSFET N-CH 200V 52A TO-220

Package: TO-220-3

Stock191,976
STD6NK50ZT4
STMicroelectronics

MOSFET N-CH 500V 5.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,002,900
FDD4141
Fairchild/ON Semiconductor

MOSFET P-CH 40V 10.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock212,184

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPP120N06NGAKSA1	Infineon Technologies	MOSFET N-CH 60V 75A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 94µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 158W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock3,216	MOSFET (Metal Oxide)	60V	75A (Tc)	10V	4V @ 94µA	62nC @ 10V	2100pF @ 30V	±20V	-	158W (Tc)	12 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
SPP73N03S2L08XK	Infineon Technologies	MOSFET N-CH 30V 73A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 55µA Gate Charge (Qg) (Max) @ Vgs: 46.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 36A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock3,040	MOSFET (Metal Oxide)	30V	73A (Tc)	4.5V, 10V	2V @ 55µA	46.2nC @ 10V	1710pF @ 25V	±20V	-	107W (Tc)	8.4 mOhm @ 36A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
AON6780	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 30A DFN5X6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9600pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock1,268,700	MOSFET (Metal Oxide)	30V	30A (Ta), 85A (Tc)	4.5V, 10V	2V @ 250µA	76nC @ 10V	9600pF @ 15V	±12V	Schottky Diode (Body)	2.5W (Ta), 83W (Tc)	1.7 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
PSMN9R5-100XS,127	NXP	MOSFET N-CH 100V 44.2A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 44.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 81.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4454pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 52.6W (Tc) Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock6,864	MOSFET (Metal Oxide)	100V	44.2A (Tc)	10V	4V @ 1mA	81.5nC @ 10V	4454pF @ 50V	±20V	-	52.6W (Tc)	9.6 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack, Isolated Tab
IRFD320	Vishay Siliconix	MOSFET N-CH 400V 490MA 4-DIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 490mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 210mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock187,020	MOSFET (Metal Oxide)	400V	490mA (Ta)	10V	4V @ 250µA	20nC @ 10V	410pF @ 25V	±20V	-	1W (Ta)	1.8 Ohm @ 210mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
AUIRFU1010Z	Infineon Technologies	MOSFET N-CH 55V 91A IPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,440	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
BSP135H6906XTSA1	Infineon Technologies	MOSFET N-CH 600V 120MA SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs(th) (Max) @ Id: 1V @ 94µA Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock2,640	MOSFET (Metal Oxide)	600V	120mA (Ta)	0V, 10V	1V @ 94µA	4.9nC @ 5V	146pF @ 25V	±20V	Depletion Mode	1.8W (Ta)	45 Ohm @ 120mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
IXFR52N30Q	IXYS	MOSFET N-CH 300V ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock7,472	MOSFET (Metal Oxide)	300V	-	-	-	-	-	-	-	-	-	-	Through Hole	ISOPLUS247?	ISOPLUS247?
IXFP7N80PM	IXYS	MOSFET N-CH 800V 3.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 1.44 Ohm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,800	MOSFET (Metal Oxide)	800V	3.5A (Tc)	10V	5V @ 1mA	32nC @ 10V	1890pF @ 25V	±30V	-	50W (Tc)	1.44 Ohm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTMFS4985NFT3G	ON Semiconductor	MOSFET N-CH 30V 65A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.63W (Ta), 22.73W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,880	MOSFET (Metal Oxide)	30V	17.5A (Ta), 65A (Tc)	4.5V, 10V	2.3V @ 1mA	30.5nC @ 10V	2100pF @ 15V	±20V	-	1.63W (Ta), 22.73W (Tc)	3.4 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
APL1001J	Microsemi Corporation	MOSFET N-CH 1000V 18A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 18A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock4,976	MOSFET (Metal Oxide)	1000V	18A	10V	4V @ 2.5mA	-	7200pF @ 25V	±30V	-	520W (Tc)	600 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
IRL40SC228	Infineon Technologies	MOSFET N-CH 40V 557A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 557A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 307nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 19680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 416W (Tc) Rds On (Max) @ Id, Vgs: 0.65 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock5,200	MOSFET (Metal Oxide)	40V	557A (Tc)	4.5V, 10V	2.4V @ 250µA	307nC @ 4.5V	19680pF @ 25V	±20V	-	416W (Tc)	0.65 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IPA60R125CPXKSA1	Infineon Technologies	MOSFET N-CH 650V 25A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock8,964	MOSFET (Metal Oxide)	650V	25A (Tc)	10V	3.5V @ 1.1mA	70nC @ 10V	2500pF @ 100V	±20V	-	35W (Tc)	125 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-FP	TO-220-3 Full Pack
SIHG47N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 47A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4854pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 379W (Tc) Rds On (Max) @ Id, Vgs: 67 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock6,080	MOSFET (Metal Oxide)	600V	47A (Tc)	10V	4V @ 250µA	225nC @ 10V	4854pF @ 100V	±30V	-	379W (Tc)	67 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
RU1E002SPTCL	Rohm Semiconductor	MOSFET P-CH 30V 0.25A UMT3F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 250mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UMT3F Package / Case: SC-85	Package: SC-85	Stock28,848	MOSFET (Metal Oxide)	30V	250mA (Ta)	4V, 10V	2.5V @ 1mA	-	30pF @ 10V	±20V	-	200mW (Ta)	1.4 Ohm @ 250mA, 10V	150°C (TJ)	Surface Mount	UMT3F	SC-85
IXFA3N120	IXYS	MOSFET N-CH 1200V 3A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,648	MOSFET (Metal Oxide)	1200V	3A (Tc)	10V	5V @ 1.5mA	39nC @ 10V	1050pF @ 25V	±20V	-	200W (Tc)	4.5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXFA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTH26P20P	IXYS	MOSFET P-CH 200V 26A TO-247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock6,288	MOSFET (Metal Oxide)	200V	26A (Tc)	10V	4V @ 250µA	56nC @ 10V	2740pF @ 25V	±20V	-	300W (Tc)	170 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
FDP52N20	Fairchild/ON Semiconductor	MOSFET N-CH 200V 52A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 49 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock191,976	MOSFET (Metal Oxide)	200V	52A (Tc)	10V	5V @ 250µA	63nC @ 10V	2900pF @ 25V	±30V	-	357W (Tc)	49 mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
STD6NK50ZT4	STMicroelectronics	MOSFET N-CH 500V 5.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 24.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,002,900	MOSFET (Metal Oxide)	500V	5.6A (Tc)	10V	4.5V @ 50µA	24.6nC @ 10V	690pF @ 25V	±30V	-	90W (Tc)	1.2 Ohm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD4141	Fairchild/ON Semiconductor	MOSFET P-CH 40V 10.8A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2775pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 12.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock212,184	MOSFET (Metal Oxide)	40V	10.8A (Ta), 50A (Tc)	4.5V, 10V	3V @ 250µA	50nC @ 10V	2775pF @ 20V	±20V	-	2.4W (Ta), 69W (Tc)	12.3 mOhm @ 12.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
R5205PND3FRATL	Rohm Semiconductor	525V 5A TO-252, AUTOMOTIVE POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,440	MOSFET (Metal Oxide)	525 V	5A (Tc)	10V	4.5V @ 1mA	10.8 nC @ 10 V	320 pF @ 25 V	±30V	-	65W (Tc)	1.6Ohm @ 2.5A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
DI074N06D1K	Diotec Semiconductor	IC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 65 V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1691 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 56.8W (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	65 V	74A (Tc)	4.5V, 10V	2.5V @ 250µA	31 nC @ 10 V	1691 pF @ 30 V	±20V	-	56.8W (Tc)	5.8mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
MSC70SM120JCU2	Microchip Technology	SICFET N-CH 1.2KV 89A SOT227 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 395W (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 (ISOTOP®) Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	89A (Tc)	20V	2.8V @ 1mA	232 nC @ 20 V	3020 pF @ 1000 V	+25V, -10V	-	395W (Tc)	31mOhm @ 40A, 20V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227 (ISOTOP®)	SOT-227-4, miniBLOC
TJ20S04M3L-LXHQ	Toshiba Semiconductor and Storage	MOSFET P-CH 40V 20A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock29,727	MOSFET (Metal Oxide)	40 V	20A (Ta)	6V, 10V	3V @ 1mA	37 nC @ 10 V	1850 pF @ 10 V	+10V, -20V	-	41W (Tc)	22.2mOhm @ 10A, 10V	175°C	Surface Mount	DPAK+	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFD311	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350 V Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip Package / Case: 4-DIP (0.300", 7.62mm)	Package: -	Request a Quote	MOSFET (Metal Oxide)	350 V	400mA (Tc)	10V	4V @ 250µA	7.5 nC @ 10 V	135 pF @ 25 V	±20V	-	1W (Tc)	3.6Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP, Hexdip	4-DIP (0.300", 7.62mm)
SQM120N06-06_GE3	Vishay Siliconix	MOSFET N-CH 60V 120A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6495 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	120A (Tc)	10V	3.5V @ 250µA	145 nC @ 10 V	6495 pF @ 25 V	±20V	-	230W (Tc)	6mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SI5446DU-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 25A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 15 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® ChipFet Single Package / Case: PowerPAK® ChipFET™ Single	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	25A (Tc)	4.5V, 10V	2.5V @ 250µA	30 nC @ 10 V	1610 pF @ 15 V	+20V, -16V	-	31W (Tc)	6.4mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® ChipFet Single	PowerPAK® ChipFET™ Single
DMP510DLW-13	Diodes Incorporated	MOSFET BVDSS: 41V-60V SOT323 T&R FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 174mA (Ta) Drive Voltage (Max Rds On, Min Rds On): ±20V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Stock30,000	MOSFET (Metal Oxide)	50 V	174mA (Ta)	±20V	2V @ 1mA	0.56 nC @ 10 V	24.6 pF @ 25 V	±20V	-	320mW (Ta)	10Ohm @ 100mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323