Page 91 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFU5410
Infineon Technologies

MOSFET P-CH 100V 13A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,352
PSMN040-200W,127
NXP

MOSFET N-CH 200V 50A SOT429

Package: TO-247-3

Stock3,248
2SK122800L
Panasonic Electronic Components

MOSFET N-CH 50V 50MA MINI 3-PIN

Package: TO-236-3, SC-59, SOT-23-3

Stock129,600
IPI80N06S4L07AKSA2
Infineon Technologies

MOSFET N-CH 60V 80A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,504
IXTT60N10
IXYS

MOSFET N-CH 100V 60A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock2,768
NTMFS4H013NFT1G
ON Semiconductor

MOSFET N-CH 25V 35A SO8FL

Package: 8-PowerTDFN

Stock3,680
NVMFS5830NLT1G
ON Semiconductor

MOSFET N-CH 40V 185A SO8FL

Package: 8-PowerTDFN

Stock3,296
AOI403
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 15A TO251A

Package: TO-251-3 Stub Leads, IPak

Stock388,800
US5U2TR
Rohm Semiconductor

MOSFET N-CH 30V 1.4A TUMT5

Package: 6-SMD (5 Leads), Flat Lead

Stock36,000
DMT4011LFG-13
Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI333

Package: 8-PowerVDFN

Stock5,696
FDB86366_F085
Fairchild/ON Semiconductor

MOSFET N-CH 80V 110A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,328
BUK7E1R8-40E,127
Nexperia USA Inc.

MOSFET N-CH 40V 120A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock9,492
TP0606N3-G
Microchip Technology

MOSFET P-CH 60V 320MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock24,360
IPP60R099P6XKSA1
Infineon Technologies

MOSFET N-CH 600V TO220-3

Package: TO-220-3

Stock6,780
DMP3018SFK-7
Diodes Incorporated

MOSFET P-CH 30V 10.2A DFN2523-6

Package: 6-PowerUDFN

Stock4,672
IRFB3206PBF
Infineon Technologies

MOSFET N-CH 60V 120A TO-220AB

Package: TO-220-3

Stock20,088
SFT1345-TL-H
ON Semiconductor

MOSFET P-CH 100V 11A TP-FA

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,888
SSM6K403TU,LF
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 4.2A

Package: 6-SMD, Flat Leads

Stock24,714
SPW17N80C3
Infineon Technologies

MOSFET N-CH 800V 17A TO-247

Package: TO-247-3

Stock17,832
SIHG068N60EF-GE3
Vishay Siliconix

MOSFET N-CH 600V 41A TO247AC

Package: -

Stock1,425

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFU5410	Infineon Technologies	MOSFET P-CH 100V 13A I-PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 205 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,352	MOSFET (Metal Oxide)	100V	13A (Tc)	10V	4V @ 250µA	58nC @ 10V	760pF @ 25V	±20V	-	66W (Tc)	205 mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
PSMN040-200W,127	NXP	MOSFET N-CH 200V 50A SOT429 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock3,248	MOSFET (Metal Oxide)	200V	50A (Tc)	10V	4V @ 1mA	183nC @ 10V	9530pF @ 25V	±20V	-	300W (Tc)	40 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
2SK122800L	Panasonic Electronic Components	MOSFET N-CH 50V 50MA MINI 3-PIN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V Vgs(th) (Max) @ Id: 1.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 5V Vgs (Max): 10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 50 Ohm @ 10mA, 2.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Mini3-G1 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock129,600	MOSFET (Metal Oxide)	50V	50mA (Ta)	2.5V	1.1V @ 100µA	-	4.5pF @ 5V	10V	-	150mW (Ta)	50 Ohm @ 10mA, 2.5V	150°C (TJ)	Surface Mount	Mini3-G1	TO-236-3, SC-59, SOT-23-3
IPI80N06S4L07AKSA2	Infineon Technologies	MOSFET N-CH 60V 80A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5680pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,504	MOSFET (Metal Oxide)	60V	80A (Tc)	4.5V, 10V	2.2V @ 40µA	72nC @ 10V	5680pF @ 25V	±16V	-	79W (Tc)	6.7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
IXTT60N10	IXYS	MOSFET N-CH 100V 60A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock2,768	MOSFET (Metal Oxide)	100V	60A (Tc)	10V	4V @ 250µA	110nC @ 10V	3200pF @ 25V	±20V	-	300W (Tc)	20 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
NTMFS4H013NFT1G	ON Semiconductor	MOSFET N-CH 25V 35A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 269A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3923pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 0.9 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,680	MOSFET (Metal Oxide)	25V	43A (Ta), 269A (Tc)	4.5V, 10V	2.1V @ 250µA	56nC @ 10V	3923pF @ 12V	±20V	-	2.7W (Ta), 104W (Tc)	0.9 mOhm @ 30A, 10V	150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVMFS5830NLT1G	ON Semiconductor	MOSFET N-CH 40V 185A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5880pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 158W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,296	MOSFET (Metal Oxide)	40V	29A (Ta)	4.5V, 10V	2.4V @ 250µA	113nC @ 10V	5880pF @ 25V	±20V	-	3.8W (Ta), 158W (Tc)	2.3 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
AOI403	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 30V 15A TO251A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 20V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 20A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251A Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock388,800	MOSFET (Metal Oxide)	30V	15A (Ta), 70A (Tc)	10V, 20V	3.5V @ 250µA	61nC @ 10V	3500pF @ 15V	±25V	-	2.5W (Ta), 90W (Tc)	6.7 mOhm @ 20A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-251A	TO-251-3 Stub Leads, IPak
US5U2TR	Rohm Semiconductor	MOSFET N-CH 30V 1.4A TUMT5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT5 Package / Case: 6-SMD (5 Leads), Flat Lead	Package: 6-SMD (5 Leads), Flat Lead	Stock36,000	MOSFET (Metal Oxide)	30V	1.4A (Ta)	4V, 10V	2.5V @ 1mA	2nC @ 5V	70pF @ 10V	±20V	Schottky Diode (Isolated)	1W (Ta)	240 mOhm @ 1.4A, 10V	150°C (TJ)	Surface Mount	TUMT5	6-SMD (5 Leads), Flat Lead
DMT4011LFG-13	Diodes Incorporated	MOSFET BVDSS: 31V 40V POWERDI333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 20V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 15.6W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock5,696	MOSFET (Metal Oxide)	40V	30A (Tc)	4.5V, 10V	3V @ 250µA	15.1nC @ 10V	767pF @ 20V	+20V, -16V	-	15.6W (Tc)	11 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerVDFN
FDB86366_F085	Fairchild/ON Semiconductor	MOSFET N-CH 80V 110A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6280pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tj) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,328	MOSFET (Metal Oxide)	80V	110A (Tc)	10V	4V @ 250µA	112nC @ 10V	6280pF @ 40V	±20V	-	176W (Tj)	3.6 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK7E1R8-40E,127	Nexperia USA Inc.	MOSFET N-CH 40V 120A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11340pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 349W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock9,492	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4V @ 1mA	145nC @ 10V	11340pF @ 25V	±20V	-	349W (Tc)	1.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
TP0606N3-G	Microchip Technology	MOSFET P-CH 60V 320MA TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 750mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock24,360	MOSFET (Metal Oxide)	60V	320mA (Tj)	5V, 10V	2.4V @ 1mA	-	150pF @ 25V	±20V	-	1W (Tc)	3.5 Ohm @ 750mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
IPP60R099P6XKSA1	Infineon Technologies	MOSFET N-CH 600V TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.21mA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3330pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock6,780	MOSFET (Metal Oxide)	600V	37.9A (Tc)	10V	4.5V @ 1.21mA	70nC @ 10V	3330pF @ 100V	±20V	-	278W (Tc)	99 mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
DMP3018SFK-7	Diodes Incorporated	MOSFET P-CH 30V 10.2A DFN2523-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4414pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2523-6 Package / Case: 6-PowerUDFN	Package: 6-PowerUDFN	Stock4,672	MOSFET (Metal Oxide)	30V	10.2A (Ta)	4.5V, 10V	3V @ 250µA	90nC @ 10V	4414pF @ 15V	±25V	-	1W (Ta)	14.5 mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2523-6	6-PowerUDFN
IRFB3206PBF	Infineon Technologies	MOSFET N-CH 60V 120A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6540pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock20,088	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 150µA	170nC @ 10V	6540pF @ 50V	±20V	-	300W (Tc)	3 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SFT1345-TL-H	ON Semiconductor	MOSFET P-CH 100V 11A TP-FA FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 275 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TP-FA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,888	MOSFET (Metal Oxide)	100V	11A (Ta)	4V, 10V	-	21nC @ 10V	1020pF @ 20V	±20V	-	1W (Ta), 35W (Tc)	275 mOhm @ 5.5A, 10V	150°C (TJ)	Surface Mount	TP-FA	TO-252-3, DPak (2 Leads + Tab), SC-63
SSM6K403TU,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 20V 4.2A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UF6 Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock24,714	MOSFET (Metal Oxide)	20V	4.2A (Ta)	1.5V, 4V	1V @ 1mA	16.8nC @ 4V	1050pF @ 10V	±10V	-	500mW (Ta)	28 mOhm @ 3A, 4V	150°C (TJ)	Surface Mount	UF6	6-SMD, Flat Leads
SPW17N80C3	Infineon Technologies	MOSFET N-CH 800V 17A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock17,832	MOSFET (Metal Oxide)	800V	17A (Tc)	10V	3.9V @ 1mA	177nC @ 10V	2320pF @ 25V	±20V	-	227W (Tc)	290 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
SIHG068N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 41A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2628 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: -	Stock1,425	MOSFET (Metal Oxide)	600 V	41A (Tc)	10V	5V @ 250µA	77 nC @ 10 V	2628 pF @ 100 V	±30V	-	250W (Tc)	68mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRL40T209ATMA2	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	300A (Tc)	4.5V, 10V	2.4V @ 250µA	269 nC @ 4.5 V	16000 pF @ 20 V	±20V	-	500W (Tc)	0.72mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
2SK3230C-T1-A	Renesas Electronics Corporation	N-CHANNEL SMALL SIGNAL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP100N06S3L-04IN	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PJD2NA60_L2_00001	Panjit International Inc.	600V N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 257 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	2A (Ta)	10V	4V @ 250µA	5.7 nC @ 10 V	257 pF @ 25 V	±30V	-	34W (Tc)	4.4Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPS60R360PFD7SAKMA1	Infineon Technologies	MOSFET N-CH 650V 10A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: -	Stock2,496	MOSFET (Metal Oxide)	650 V	10A (Tc)	10V	4.5V @ 140µA	12.7 nC @ 10 V	534 pF @ 400 V	±20V	-	43W (Tc)	360mOhm @ 2.9A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
IPF023N08NF2SATMA1	Infineon Technologies	TRENCH 40<-<100V PG-TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 139µA Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-14 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock2,400	MOSFET (Metal Oxide)	80 V	209A (Tc)	6V, 10V	3.8V @ 139µA	133 nC @ 10 V	6200 pF @ 40 V	±20V	-	214W (Tc)	2.3mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-14	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TSM340N06CH	Taiwan Semiconductor Corporation	60V, 25A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251S (IPAK SL) Package / Case: TO-251-3 Stub Leads, IPAK	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	16.6 nC @ 10 V	1180 pF @ 30 V	±20V	-	40W (Tc)	34mOhm @ 15A, 10V	150°C (TJ)	Through Hole	TO-251S (IPAK SL)	TO-251-3 Stub Leads, IPAK
R6077VNZ4C13	Rohm Semiconductor	600V 77A TO-247, PRESTOMOS WITH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: 6.5V @ 1.9mA Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 781W (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 23A, 15V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Stock3,570	MOSFET (Metal Oxide)	600 V	77A (Tc)	10V, 15V	6.5V @ 1.9mA	108 nC @ 10 V	5200 pF @ 100 V	±30V	-	781W (Tc)	51mOhm @ 23A, 15V	150°C (TJ)	Through Hole	TO-247	TO-247-3