Page 89 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF8304MTR1PBF
Infineon Technologies

MOSFET N-CH 30V 28A MX

Package: DirectFET? Isometric MX

Stock3,008
IRF7494TRPBF
Infineon Technologies

MOSFET N-CH 150V 5.1A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock42,312
SPW11N60S5FKSA1
Infineon Technologies

MOSFET N-CH 600V 11A TO-247

Package: TO-247-3

Stock3,392
IRF7466TR
Infineon Technologies

MOSFET N-CH 30V 11A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,280
BUK751R8-40E,127
Nexperia USA Inc.

MOSFET N-CH 40V 120A TO220AB

Package: TO-220-3

Stock3,040
TLC530FTU
Fairchild/ON Semiconductor

MOSFET N-CH 330V 7A TO220-3

Package: TO-220-3

Stock7,168
MMBF170-7
Diodes Incorporated

MOSFET N-CH 60V 500MA SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock648,000
IRF2805PBF
Infineon Technologies

MOSFET N-CH 55V 75A TO-220AB

Package: TO-220-3

Stock34,992
STB25NM60ND
STMicroelectronics

MOSFET N-CH 600V 21A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock37,368
DMNH4006SK3-13
Diodes Incorporated

MOSFET N-CH 40V 18A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,656
STL60N3LLH5
STMicroelectronics

MOSFET N-CH 30V 17A POWERFLAT

Package: 8-PowerVDFN

Stock49,272
SSN1N45BTA
Fairchild/ON Semiconductor

MOSFET N-CH 450V 500MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock305,988
TPH1110FNH,L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 250V 15A 8-SOP

Package: 8-PowerVDFN

Stock44,208
SIHP25N40D-GE3
Vishay Siliconix

MOSFET N-CH 400V 25A TO-220AB

Package: TO-220-3

Stock12,684
SSM3J120TU,LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 4A UFM

Package: 3-SMD, Flat Leads

Stock231,690
DMT69M5LFVWQ-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI333

Package: -

Request a Quote
2SK2464-TL-E
onsemi

NCH 10V DRIVE SERIES

Package: -

Request a Quote
IRF740S2515
Harris Corporation

10A, 400V, 0.55OHM, N-CHANNEL, P

Package: -

Request a Quote
STW74NF30
STMicroelectronics

MOSFET N-CH 300V 60A TO247

Package: -

Request a Quote
IPS60R210PFD7SAKMA1
Infineon Technologies

MOSFET N-CH 650V 16A TO251-3

Package: -

Stock918

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF8304MTR1PBF	Infineon Technologies	MOSFET N-CH 30V 28A MX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 28A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock3,008	MOSFET (Metal Oxide)	30V	28A (Ta), 170A (Tc)	4.5V, 10V	2.35V @ 100µA	42nC @ 4.5V	4700pF @ 15V	±20V	-	2.8W (Ta), 100W (Tc)	2.2 mOhm @ 28A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
IRF7494TRPBF	Infineon Technologies	MOSFET N-CH 150V 5.1A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1783pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 44 mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock42,312	MOSFET (Metal Oxide)	150V	5.1A (Ta)	10V	4V @ 250µA	53nC @ 10V	1783pF @ 25V	±20V	-	2.5W (Ta)	44 mOhm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SPW11N60S5FKSA1	Infineon Technologies	MOSFET N-CH 600V 11A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock3,392	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	5.5V @ 500µA	54nC @ 10V	1460pF @ 25V	±20V	-	125W (Tc)	380 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IRF7466TR	Infineon Technologies	MOSFET N-CH 30V 11A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,280	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	3V @ 250µA	23nC @ 4.5V	2100pF @ 15V	±20V	-	2.5W (Ta)	12.5 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
BUK751R8-40E,127	Nexperia USA Inc.	MOSFET N-CH 40V 120A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11340pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 349W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,040	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4V @ 1mA	145nC @ 10V	11340pF @ 25V	±20V	-	349W (Tc)	1.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
TLC530FTU	Fairchild/ON Semiconductor	MOSFET N-CH 330V 7A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 330V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock7,168	MOSFET (Metal Oxide)	330V	7A (Ta)	-	-	-	-	-	-	-	-	-	Through Hole	TO-220-3	TO-220-3
MMBF170-7	Diodes Incorporated	MOSFET N-CH 60V 500MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock648,000	MOSFET (Metal Oxide)	60V	500mA (Ta)	4.5V, 10V	3V @ 250µA	-	40pF @ 10V	±20V	-	300mW (Ta)	5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IRF2805PBF	Infineon Technologies	MOSFET N-CH 55V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5110pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 104A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock34,992	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	230nC @ 10V	5110pF @ 25V	±20V	-	330W (Tc)	4.7 mOhm @ 104A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STB25NM60ND	STMicroelectronics	MOSFET N-CH 600V 21A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock37,368	MOSFET (Metal Oxide)	600V	21A (Tc)	10V	5V @ 250µA	80nC @ 10V	2400pF @ 50V	±25V	-	160W (Tc)	160 mOhm @ 10.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DMNH4006SK3-13	Diodes Incorporated	MOSFET N-CH 40V 18A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2280pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta) Rds On (Max) @ Id, Vgs: 6 mOhm @ 86A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,656	MOSFET (Metal Oxide)	40V	18A (Ta), 90A (Tc)	10V	4V @ 250µA	51nC @ 10V	2280pF @ 25V	±20V	-	2.2W (Ta)	6 mOhm @ 86A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
STL60N3LLH5	STMicroelectronics	MOSFET N-CH 30V 17A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 25V Vgs (Max): ±22V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock49,272	MOSFET (Metal Oxide)	30V	60A (Tc)	4.5V, 10V	1V @ 250µA	8nC @ 4.5V	1290pF @ 25V	±22V	-	60W (Tc)	7.1 mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
SSN1N45BTA	Fairchild/ON Semiconductor	MOSFET N-CH 450V 500MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±50V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 4.25 Ohm @ 250mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock305,988	MOSFET (Metal Oxide)	450V	500mA (Tc)	10V	3.7V @ 250µA	8.5nC @ 10V	240pF @ 25V	±50V	-	900mW (Ta)	4.25 Ohm @ 250mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TPH1110FNH,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 250V 15A 8-SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 112 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock44,208	MOSFET (Metal Oxide)	250V	10A (Ta)	10V	4V @ 300µA	11nC @ 10V	1100pF @ 100V	±20V	-	1.6W (Ta), 57W (Tc)	112 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
SIHP25N40D-GE3	Vishay Siliconix	MOSFET N-CH 400V 25A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1707pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock12,684	MOSFET (Metal Oxide)	400V	25A (Tc)	10V	5V @ 250µA	88nC @ 10V	1707pF @ 100V	±30V	-	278W (Tc)	170 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SSM3J120TU,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 4A UFM FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22.3nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 1484pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 38 mOhm @ 3A, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock231,690	MOSFET (Metal Oxide)	20V	4A (Ta)	1.5V, 4V	1V @ 1mA	22.3nC @ 4V	1484pF @ 10V	±8V	-	500mW (Ta)	38 mOhm @ 3A, 4V	150°C (TJ)	Surface Mount	UFM	3-SMD, Flat Leads
DMT69M5LFVWQ-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V POWERDI333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 40.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.74W (Ta), 20.5W (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	14.8A (Ta), 40.6A (Tc)	4.5V, 10V	2.5V @ 250µA	28.4 nC @ 10 V	1406 pF @ 30 V	±20V	-	2.74W (Ta), 20.5W (Tc)	8.3mOhm @ 13.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount, Wettable Flank	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN
2SK2464-TL-E	onsemi	NCH 10V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF740S2515	Harris Corporation	10A, 400V, 0.55OHM, N-CHANNEL, P FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STW74NF30	STMicroelectronics	MOSFET N-CH 300V 60A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5930 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 320W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	300 V	60A (Tc)	10V	4V @ 250µA	164 nC @ 10 V	5930 pF @ 25 V	±20V	-	320W (Tc)	45mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IPS60R210PFD7SAKMA1	Infineon Technologies	MOSFET N-CH 650V 16A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 64W (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: -	Stock918	MOSFET (Metal Oxide)	650 V	16A (Tc)	10V	4.5V @ 240µA	23 nC @ 10 V	1015 pF @ 400 V	±20V	-	64W (Tc)	210mOhm @ 4.9A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
BSO613SPVGXUMA1	Infineon Technologies	MOSFET P-CH 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8-6 Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock67,197	MOSFET (Metal Oxide)	60 V	3.44A (Ta)	10V	4V @ 1mA	30 nC @ 10 V	875 pF @ 25 V	±20V	-	2.5W (Ta)	130mOhm @ 3.44A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-8-6	8-SOIC (0.154", 3.90mm Width)
BTS131E3045ANTMA1	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 75W Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	25A (Tc)	4.5V	2.5V @ 1mA	-	1400 pF @ 25 V	±10V	-	75W	60mOhm @ 12A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SCTW40N120G2VAG	STMicroelectronics	SICFET N-CH 1200V 33A HIP247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V Vgs (Max): +22V, -10V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 18V Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Supplier Device Package: HiP247™ Package / Case: TO-247-3	Package: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	33A (Tc)	18V	5V @ 1mA	63 nC @ 18 V	1230 pF @ 800 V	+22V, -10V	-	290W (Tc)	105mOhm @ 20A, 18V	-55°C ~ 200°C (TJ)	Through Hole	HiP247™	TO-247-3
IXFH1605	IXYS	MOSFET N-CH 16A TO247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCTWA70N120G2V-4	STMicroelectronics	DISCRETE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 800 V Vgs (Max): +22V, -10V FET Feature: - Power Dissipation (Max): 547W Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	91A (Tc)	18V	4.9V @ 1mA	150 nC @ 18 V	3540 pF @ 800 V	+22V, -10V	-	547W	30mOhm @ 50A, 18V	-55°C ~ 200°C (TJ)	Through Hole	TO-247-4	TO-247-4
IRFR120TRLPBF-BE3	Vishay Siliconix	MOSFET N-CH 100V 7.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock8,940	MOSFET (Metal Oxide)	100 V	7.7A (Tc)	-	4V @ 250µA	16 nC @ 10 V	360 pF @ 25 V	±20V	-	2.5W (Ta), 42W (Tc)	270mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHA22N60AEL-GE3	Vishay Siliconix	MOSFET N-CH 600V 21A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1757 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	21A (Tc)	10V	4V @ 250µA	82 nC @ 10 V	1757 pF @ 100 V	±30V	-	35W (Tc)	180mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
PJS6404_S1_00001	Panjit International Inc.	30V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 343 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 6.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	Package: -	Stock7,905	MOSFET (Metal Oxide)	30 V	6.8A (Ta)	4.5V, 10V	2.1V @ 250µA	7.8 nC @ 10 V	343 pF @ 15 V	±20V	-	2W (Ta)	32mOhm @ 6.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6