Page 94 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

JANTXV2N6758
Microsemi Corporation

MOSFET N-CH 200V 9A

Package: TO-204AA, TO-3

Stock6,976
2N7002KT3G
ON Semiconductor

MOSFET N-CH 60V 320MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock7,968
FQD5N60CTF
Fairchild/ON Semiconductor

MOSFET N-CH 600V 2.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,144
IPC65R041CFDX1SA1
Infineon Technologies

MOSFET N-CH BARE DIE

Package: -

Stock3,824
AUIRFN8401TR
Infineon Technologies

MOSFET N-CH 40V 84A 8PQFN

Package: 8-PowerTDFN

Stock6,132
BSC019N04LSATMA1
Infineon Technologies

MOSFET N-CH 40V 27A 8TDSON

Package: 8-PowerTDFN

Stock7,504
AO6424
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 5A 6TSOP

Package: SC-74, SOT-457

Stock4,745,064
STP11NM60FD
STMicroelectronics

MOSFET N-CH 600V 11A TO-220

Package: TO-220-3

Stock192,996
AON7400B
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 30A 8DFN

Package: 8-PowerSMD, Flat Leads

Stock3,296
AO4492
Alpha & Omega Semiconductor Inc.

MOSFET N CH 30V 14A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock10,152
FDMS7694
Fairchild/ON Semiconductor

MOSFET N-CH 30V POWER56

Package: 8-PowerTDFN

Stock188,664
TPH3202LS
Transphorm

GAN FET 600V 9A PQFN88

Package: 3-PowerDFN

Stock6,684
STFI31N65M5
STMicroelectronics

MOSFET N CH 650V 22A I2PAKFP

Package: TO-262-3 Full Pack, I2Pak

Stock16,380
BUK7Y12-40EX
Nexperia USA Inc.

MOSFET N-CH 40V 52A LFPAK

Package: SC-100, SOT-669

Stock112,098
BSP316PH6327XTSA1
Infineon Technologies

MOSFET P-CH 100V 0.68A SOT223

Package: TO-261-4, TO-261AA

Stock42,840
SCT3120ALGC11
Rohm Semiconductor

MOSFET NCH 650V 21A TO247N

Package: TO-247-3

Stock18,396
IPB90R340C3ATMA1
Infineon Technologies

MOSFET N-CH 900V 15A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock13,392
IRFR5410TRPBF
Infineon Technologies

MOSFET P-CH 100V 13A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock576,936
2SJ418-TL-E
onsemi

MOSFET P-CH 30V

Package: -

Request a Quote
IPP60R160C6XKSA1
Infineon Technologies

MOSFET N-CH 600V 23.8A TO220-3

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
JANTXV2N6758	Microsemi Corporation	MOSFET N-CH 200V 9A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 490 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA (TO-3) Package / Case: TO-204AA, TO-3	Package: TO-204AA, TO-3	Stock6,976	MOSFET (Metal Oxide)	200V	9A (Tc)	10V	4V @ 250µA	39nC @ 10V	-	±20V	-	4W (Ta), 75W (Tc)	490 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-204AA (TO-3)	TO-204AA, TO-3
2N7002KT3G	ON Semiconductor	MOSFET N-CH 60V 320MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock7,968	MOSFET (Metal Oxide)	60V	320mA (Ta)	4.5V, 10V	2.5V @ 250µA	0.7nC @ 4.5V	24.5pF @ 20V	±20V	-	350mW (Ta)	1.6 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
FQD5N60CTF	Fairchild/ON Semiconductor	MOSFET N-CH 600V 2.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 49W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,144	MOSFET (Metal Oxide)	600V	2.8A (Tc)	10V	4V @ 250µA	19nC @ 10V	670pF @ 25V	±30V	-	2.5W (Ta), 49W (Tc)	2.5 Ohm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPC65R041CFDX1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,824	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUIRFN8401TR	Infineon Technologies	MOSFET N-CH 40V 84A 8PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.2W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,132	MOSFET (Metal Oxide)	40V	84A (Tc)	10V	3.9V @ 50µA	66nC @ 10V	2170pF @ 25V	±20V	-	4.2W (Ta), 63W (Tc)	4.6 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PQFN (5x6)	8-PowerTDFN
BSC019N04LSATMA1	Infineon Technologies	MOSFET N-CH 40V 27A 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,504	MOSFET (Metal Oxide)	40V	27A (Ta), 100A (Tc)	4.5V, 10V	2V @ 250µA	41nC @ 10V	2900pF @ 20V	±20V	-	2.5W (Ta), 78W (Tc)	1.9 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
AO6424	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 5A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 31 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: SC-74, SOT-457	Stock4,745,064	MOSFET (Metal Oxide)	30V	5A (Ta)	4.5V, 10V	2.4V @ 250µA	6.3nC @ 10V	310pF @ 15V	±20V	-	1.25W (Ta)	31 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
STP11NM60FD	STMicroelectronics	MOSFET N-CH 600V 11A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock192,996	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	5V @ 250µA	40nC @ 10V	900pF @ 25V	±30V	-	160W (Tc)	450 mOhm @ 5.5A, 10V	-	Through Hole	TO-220AB	TO-220-3
AON7400B	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 30A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.1W (Ta), 24W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3x3) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock3,296	MOSFET (Metal Oxide)	30V	18A (Ta), 40A (Tc)	4.5V, 10V	2.5V @ 250µA	26nC @ 10V	1440pF @ 15V	±20V	-	4.1W (Ta), 24W (Tc)	7.5 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN-EP (3x3)	8-PowerSMD, Flat Leads
AO4492	Alpha & Omega Semiconductor Inc.	MOSFET N CH 30V 14A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock10,152	MOSFET (Metal Oxide)	30V	14A (Ta)	4.5V, 10V	2.2V @ 250µA	18nC @ 10V	770pF @ 15V	±20V	-	3.1W (Ta)	9.5 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
FDMS7694	Fairchild/ON Semiconductor	MOSFET N-CH 30V POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 27W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 13.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock188,664	MOSFET (Metal Oxide)	30V	13.2A (Ta), 20A (Tc)	4.5V, 10V	3V @ 250µA	22nC @ 10V	1410pF @ 15V	±20V	-	2.5W (Ta), 27W (Tc)	9.5 mOhm @ 13.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
TPH3202LS	Transphorm	GAN FET 600V 9A PQFN88 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 8V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (8x8) Package / Case: 3-PowerDFN	Package: 3-PowerDFN	Stock6,684	GaNFET (Gallium Nitride)	600V	9A (Tc)	8V	2.5V @ 250µA	9.3nC @ 4.5V	760pF @ 480V	±18V	-	65W (Tc)	350 mOhm @ 5.5A, 8V	-55°C ~ 175°C (TJ)	Surface Mount	PQFN (8x8)	3-PowerDFN
STFI31N65M5	STMicroelectronics	MOSFET N CH 650V 22A I2PAKFP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1865pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 148 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock16,380	MOSFET (Metal Oxide)	650V	22A (Tc)	10V	5V @ 250µA	45nC @ 10V	1865pF @ 100V	±25V	-	30W (Tc)	148 mOhm @ 11A, 10V	150°C (TJ)	Through Hole	I2PAKFP (TO-281)	TO-262-3 Full Pack, I2Pak
BUK7Y12-40EX	Nexperia USA Inc.	MOSFET N-CH 40V 52A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1039pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock112,098	MOSFET (Metal Oxide)	40V	52A (Tc)	10V	4V @ 1mA	15nC @ 10V	1039pF @ 25V	±20V	-	65W (Tc)	12 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
BSP316PH6327XTSA1	Infineon Technologies	MOSFET P-CH 100V 0.68A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 680mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 170µA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 680mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock42,840	MOSFET (Metal Oxide)	100V	680mA (Ta)	4.5V, 10V	2V @ 170µA	6.4nC @ 10V	146pF @ 25V	±20V	-	1.8W (Ta)	1.8 Ohm @ 680mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
SCT3120ALGC11	Rohm Semiconductor	MOSFET NCH 650V 21A TO247N FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 3.33mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 500V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 103W (Tc) Rds On (Max) @ Id, Vgs: 156 mOhm @ 6.7A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Package: TO-247-3	Stock18,396	SiCFET (Silicon Carbide)	650V	21A (Tc)	18V	5.6V @ 3.33mA	38nC @ 18V	460pF @ 500V	+22V, -4V	-	103W (Tc)	156 mOhm @ 6.7A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
IPB90R340C3ATMA1	Infineon Technologies	MOSFET N-CH 900V 15A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 340 mOhm @ 9.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock13,392	MOSFET (Metal Oxide)	900V	15A (Tc)	10V	3.5V @ 1mA	11nC @ 10V	2400pF @ 100V	±20V	-	208W (Tc)	340 mOhm @ 9.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFR5410TRPBF	Infineon Technologies	MOSFET P-CH 100V 13A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 205 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock576,936	MOSFET (Metal Oxide)	100V	13A (Tc)	10V	4V @ 250µA	58nC @ 10V	760pF @ 25V	±20V	-	66W (Tc)	205 mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
2SJ418-TL-E	onsemi	MOSFET P-CH 30V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP60R160C6XKSA1	Infineon Technologies	MOSFET N-CH 600V 23.8A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	23.8A (Tc)	10V	3.5V @ 750µA	75 nC @ 10 V	1660 pF @ 100 V	±20V	-	176W (Tc)	160mOhm @ 11.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IGLD60R190D1AUMA3	Infineon Technologies	GAN HV FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 960µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-LSON-8-1 Package / Case: 8-LDFN Exposed Pad	Package: -	Stock6,882	GaNFET (Gallium Nitride)	600 V	10A (Tc)	-	1.6V @ 960µA	-	157 pF @ 400 V	-10V	-	62.5W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	PG-LSON-8-1	8-LDFN Exposed Pad
IPW50R140CPFKSA1	Infineon Technologies	MOSFET N-CH 550V 23A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550 V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 930µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	550 V	23A (Tc)	10V	3.5V @ 930µA	64 nC @ 10 V	2540 pF @ 100 V	±20V	-	192W (Tc)	140mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
SIHP085N60EF-GE3	Vishay Siliconix	EF SERIES POWER MOSFET WITH FAST FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2733 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 184W (Tc) Rds On (Max) @ Id, Vgs: 84mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock6,000	MOSFET (Metal Oxide)	600 V	34A (Tc)	10V	5V @ 250µA	63 nC @ 10 V	2733 pF @ 100 V	±30V	-	184W (Tc)	84mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
NVTFS070N10MCLTAG	onsemi	PTNG 100V LL U8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 15µA Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.9W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	4.5A (Ta), 13A (Tc)	4.5V, 10V	3V @ 15µA	5.5 nC @ 10 V	305 pF @ 50 V	±20V	-	2.9W (Ta), 25W (Tc)	65mOhm @ 3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
IRF430	International Rectifier	500V, N-CHANNEL REPETITIVE AVALA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA (TO-3) Package / Case: TO-204AA, TO-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	4.5A (Tc)	10V	4V @ 250µA	40 nC @ 10 V	610 pF @ 25 V	±20V	-	75W (Tc)	1.8Ohm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-204AA (TO-3)	TO-204AA, TO-3
BUK9Y1R3-40HX	Nexperia USA Inc.	BUK9Y1R3-40H/SOT669/LFPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 190A (Tj) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): +16V, -10V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock1,080	-	-	190A (Tj)	-	-	-	-	+16V, -10V	-	-	-	-	-	-	-
SISS32LDN-T1-GE3	Vishay Siliconix	MOSFET N-CH 80V 17.4A/63A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8SH Package / Case: PowerPAK® 1212-8SH	Package: -	Stock70,875	MOSFET (Metal Oxide)	80 V	17.4A (Ta), 63A (Tc)	4.5V, 10V	2.5V @ 250µA	57 nC @ 10 V	2550 pF @ 40 V	±20V	-	5W (Ta), 65.7W (Tc)	7.2mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8SH	PowerPAK® 1212-8SH
IPB60R380C6ATMA1	Infineon Technologies	MOSFET N-CH 600V 10.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	10.6A (Tc)	10V	3.5V @ 320µA	32 nC @ 10 V	700 pF @ 100 V	±20V	-	83W (Tc)	380mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB