Page 93 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF8707GPBF
Infineon Technologies

MOSFET N-CH 30V 11A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock131,436
BUK951R9-40E,127
NXP

MOSFET N-CH 40V 120A TO220AB

Package: TO-220-3

Stock4,864
FDC5614P_D87Z
Fairchild/ON Semiconductor

MOSFET P-CH 60V 3A 6SSOT

Package: SOT-23-6 Thin, TSOT-23-6

Stock3,488
PHD66NQ03LT,118
NXP

MOSFET N-CH 25V 66A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,632
IRL510STRL
Vishay Siliconix

MOSFET N-CH 100V 5.6A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,544
IRF530STRL
Vishay Siliconix

MOSFET N-CH 100V 14A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,824
IPP65R280C6XKSA1
Infineon Technologies

MOSFET N-CH 650V 13.8A TO220

Package: TO-220-3

Stock5,184
IPS60R400CEAKMA1
Infineon Technologies

CONSUMER

Package: -

Stock3,232
AOI7N65
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 7A TO251A

Package: TO-251-3 Stub Leads, IPak

Stock6,432
TJ8S06M3L(T6L1,NQ)
Toshiba Semiconductor and Storage

MOSFET P-CH 60V 8A DPAK-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,896
SI2305-TP
Micro Commercial Co

P-CHANNEL MOSFET, SOT-23 PACKAGE

Package: TO-236-3, SC-59, SOT-23-3

Stock5,840
IPP60R380P6XKSA1
Infineon Technologies

MOSFET N-CH 600V TO220-3

Package: TO-220-3

Stock8,364
TK22E10N1,S1X
Toshiba Semiconductor and Storage

MOSFET N CH 100V 52A TO220

Package: TO-220-3

Stock10,188
AOT5N50
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 500V 5A TO-220

Package: TO-220-3

Stock116,976
STB31N65M5
STMicroelectronics

MOSFET N-CH 650V 22A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,032
ZVN2106A
Diodes Incorporated

MOSFET N-CH 60V 450MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock487,716
BUK7Y14-80EX
Nexperia USA Inc.

MOSFET N-CH 80V 65A LFPAK

Package: SC-100, SOT-669

Stock105,684
NVMFS5A140PLZWFT1G
onsemi

MOSFET P-CH 40V 20A/140A 5DFN

Package: -

Request a Quote
V30432-T1-GE3
Vishay Siliconix

MOSFET N-CH SMD

Package: -

Request a Quote
GSF0304
Good-Ark Semiconductor

MOSFET, P-CH, SINGLE, -4.1A, -30

Package: -

Stock17,895

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF8707GPBF	Infineon Technologies	MOSFET N-CH 30V 11A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 11.9 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock131,436	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	2.35V @ 25µA	9.3nC @ 4.5V	760pF @ 15V	±20V	-	2.5W (Ta)	11.9 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
BUK951R9-40E,127	NXP	MOSFET N-CH 40V 120A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 16400pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 349W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,864	MOSFET (Metal Oxide)	40V	120A (Tc)	5V, 10V	2.1V @ 1mA	120nC @ 5V	16400pF @ 25V	±10V	-	349W (Tc)	1.7 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDC5614P_D87Z	Fairchild/ON Semiconductor	MOSFET P-CH 60V 3A 6SSOT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 759pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 105 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock3,488	MOSFET (Metal Oxide)	60V	3A (Ta)	4.5V, 10V	3V @ 250µA	24nC @ 10V	759pF @ 30V	±20V	-	1.6W (Ta)	105 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
PHD66NQ03LT,118	NXP	MOSFET N-CH 25V 66A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,632	MOSFET (Metal Oxide)	25V	66A (Tc)	5V, 10V	2V @ 1mA	12nC @ 5V	860pF @ 25V	±20V	-	93W (Tc)	10.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IRL510STRL	Vishay Siliconix	MOSFET N-CH 100V 5.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 540 mOhm @ 3.4A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,544	MOSFET (Metal Oxide)	100V	5.6A (Tc)	4V, 5V	2V @ 250µA	6.1nC @ 5V	250pF @ 25V	±10V	-	3.7W (Ta), 43W (Tc)	540 mOhm @ 3.4A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF530STRL	Vishay Siliconix	MOSFET N-CH 100V 14A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,824	MOSFET (Metal Oxide)	100V	14A (Tc)	10V	4V @ 250µA	26nC @ 10V	670pF @ 25V	±20V	-	3.7W (Ta), 88W (Tc)	160 mOhm @ 8.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPP65R280C6XKSA1	Infineon Technologies	MOSFET N-CH 650V 13.8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock5,184	MOSFET (Metal Oxide)	650V	13.8A (Tc)	10V	3.5V @ 440µA	45nC @ 10V	950pF @ 100V	±20V	-	104W (Tc)	280 mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IPS60R400CEAKMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,232	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AOI7N65	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 650V 7A TO251A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 178W (Tc) Rds On (Max) @ Id, Vgs: 1.56 Ohm @ 3.5A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251A Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock6,432	MOSFET (Metal Oxide)	650V	7A (Tc)	10V	4.5V @ 250µA	24nC @ 10V	1180pF @ 25V	±30V	-	178W (Tc)	1.56 Ohm @ 3.5A, 10V	-50°C ~ 150°C (TJ)	Through Hole	TO-251A	TO-251-3 Stub Leads, IPak
TJ8S06M3L(T6L1,NQ)	Toshiba Semiconductor and Storage	MOSFET P-CH 60V 8A DPAK-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 10V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 104 mOhm @ 4A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,896	MOSFET (Metal Oxide)	60V	8A (Ta)	6V, 10V	3V @ 1mA	19nC @ 10V	890pF @ 10V	+10V, -20V	-	27W (Tc)	104 mOhm @ 4A, 10V	175°C (TJ)	Surface Mount	DPAK+	TO-252-3, DPak (2 Leads + Tab), SC-63
SI2305-TP	Micro Commercial Co	P-CHANNEL MOSFET, SOT-23 PACKAGE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 4.1A Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 350mW Rds On (Max) @ Id, Vgs: 90 mOhm @ 2A, 1.8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock5,840	MOSFET (Metal Oxide)	8V	4.1A	4.5V	900mV @ 250µA	15nC @ 4.5V	-	±8V	-	350mW	90 mOhm @ 2A, 1.8V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IPP60R380P6XKSA1	Infineon Technologies	MOSFET N-CH 600V TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 877pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock8,364	MOSFET (Metal Oxide)	600V	10.6A (Tc)	10V	4.5V @ 320µA	19nC @ 10V	877pF @ 100V	±20V	-	83W (Tc)	380 mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
TK22E10N1,S1X	Toshiba Semiconductor and Storage	MOSFET N CH 100V 52A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 72W (Tc) Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock10,188	MOSFET (Metal Oxide)	100V	52A (Tc)	10V	4V @ 300µA	28nC @ 10V	1800pF @ 50V	±20V	-	72W (Tc)	13.8 mOhm @ 11A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
AOT5N50	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 500V 5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock116,976	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	4.5V @ 250µA	19nC @ 10V	620pF @ 25V	±30V	-	104W (Tc)	1.5 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STB31N65M5	STMicroelectronics	MOSFET N-CH 650V 22A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1865pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 148 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,032	MOSFET (Metal Oxide)	650V	22A (Tc)	10V	5V @ 250µA	45nC @ 10V	1865pF @ 100V	±25V	-	150W (Tc)	148 mOhm @ 11A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
ZVN2106A	Diodes Incorporated	MOSFET N-CH 60V 450MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 18V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock487,716	MOSFET (Metal Oxide)	60V	450mA (Ta)	10V	2.4V @ 1mA	-	75pF @ 18V	±20V	-	700mW (Ta)	2 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
BUK7Y14-80EX	Nexperia USA Inc.	MOSFET N-CH 80V 65A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 44.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3155pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 147W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock105,684	MOSFET (Metal Oxide)	80V	65A (Tc)	10V	4V @ 1mA	44.8nC @ 10V	3155pF @ 25V	±20V	-	147W (Tc)	14 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
NVMFS5A140PLZWFT1G	onsemi	MOSFET P-CH 40V 20A/140A 5DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	20A (Ta), 140A (Tc)	4.5V, 10V	2.6V @ 1mA	136 nC @ 10 V	7400 pF @ 20 V	±20V	-	3.8W (Ta), 200W (Tc)	4.2mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
V30432-T1-GE3	Vishay Siliconix	MOSFET N-CH SMD FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GSF0304	Good-Ark Semiconductor	MOSFET, P-CH, SINGLE, -4.1A, -30 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock17,895	MOSFET (Metal Oxide)	30 V	4.1A (Ta)	4.5V, 10V	2.1V @ 250µA	13 nC @ 10 V	650 pF @ 15 V	±20V	-	1.4W (Ta)	65mOhm @ 4.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
R6020YNXC7G	Rohm Semiconductor	600V 12A TO-220FM, FAST SWITCHIN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs(th) (Max) @ Id: 6V @ 1.65mA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: -	Stock3,195	MOSFET (Metal Oxide)	600 V	12A (Tc)	10V, 12V	6V @ 1.65mA	28 nC @ 10 V	1200 pF @ 100 V	±30V	-	62W (Tc)	200mOhm @ 6A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
DI100N04D1-AQ	Diotec Semiconductor	MOSFET, DPAK, 40V, 100A, 0, 69W FET Type: N-Channel Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 100A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 69W Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,488	-	-	100A	-	-	-	-	-	-	69W	-	-	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
CES2317-ML	MOSLEADER	Single P -30V -3.1A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SI2102-TP	Micro Commercial Co	MOSFET N-CH 20V 2.1A SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 2.1A (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 200mW Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Stock44,970	MOSFET (Metal Oxide)	20 V	2.1A (Tj)	2.5V, 4.5V	1.2V @ 50µA	10 nC @ 4.5 V	300 pF @ 10 V	±8V	-	200mW	60mOhm @ 3.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
DMN2053UWQ-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V SOT323 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 470mW (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	2.9A (Ta)	1.5V, 4.5V	1V @ 250µA	3.6 nC @ 4.5 V	369 pF @ 10 V	±12V	-	470mW (Ta)	56mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
SUM90N08-4M8P-E3	Vishay Siliconix	MOSFET N-CH 75V 90A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 40 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	75 V	90A (Tc)	-	4V @ 250µA	160 nC @ 10 V	6460 pF @ 40 V	-	-	-	4.8mOhm @ 20A, 10V	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIHB35N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 32A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock36	MOSFET (Metal Oxide)	600 V	32A (Tc)	10V	4V @ 250µA	134 nC @ 10 V	2568 pF @ 100 V	±30V	-	250W (Tc)	97mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPW80R290C3AXKSA1	Infineon Technologies	MOSFET N-CH 800V 17A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: -	Stock648	MOSFET (Metal Oxide)	800 V	17A (Tc)	10V	3.9V @ 1mA	117 nC @ 10 V	2300 pF @ 100 V	±20V	-	227W (Tc)	290mOhm @ 11A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3