Page 23 - Infineon Technologies Products - Diodes - Rectifiers - Single

SIDC42D120E6
Infineon Technologies

DIODE GEN PURP 1.2KV 50A WAFER

Package: Die

Stock2,416
SIDC38D60C6
Infineon Technologies

DIODE GEN PURP 600V 150A WAFER

Package: Die

Stock4,672
SIDC32D170H
Infineon Technologies

DIODE GEN PURP 1.7KV 50A WAFER

Package: Die

Stock5,760
SIDC30D60E6
Infineon Technologies

DIODE GEN PURP 600V 75A WAFER

Package: Die

Stock6,624
SIDC30D120H6
Infineon Technologies

DIODE GEN PURP 1.2KV 50A WAFER

Package: Die

Stock4,448
SIDC30D120F6
Infineon Technologies

DIODE GEN PURP 1.2KV 35A WAFER

Package: Die

Stock7,232
SIDC30D120E6
Infineon Technologies

DIODE GEN PURP 1.2KV 35A WAFER

Package: Die

Stock4,832
SIDC26D60C6
Infineon Technologies

DIODE GEN PURP 600V 100A WAFER

Package: Die

Stock6,288
SIDC24D30SIC3
Infineon Technologies

DIODE SILICON 300V 10A WAFER

Package: Die

Stock6,688
SIDC23D60E6Y
Infineon Technologies

DIODE GEN PURP 600V 50A WAFER

Package: Die

Stock7,136
SIDC23D60E6
Infineon Technologies

DIODE GEN PURP 600V 50A WAFER

Package: Die

Stock5,456
SIDC23D120H6
Infineon Technologies

DIODE GEN PURP 1.2KV 35A WAFER

Package: Die

Stock5,088
SIDC23D120F6
Infineon Technologies

DIODE GEN PURP 1.2KV 25A WAFER

Package: Die

Stock2,416
SIDC23D120E6
Infineon Technologies

DIODE GEN PURP 1.2KV 25A WAFER

Package: Die

Stock4,960
SIDC20D60C6
Infineon Technologies

DIODE GEN PURP 600V 75A WAFER

Package: Die

Stock7,056
SIDC19D60SIC3
Infineon Technologies

DIODE SCHOTTKY 600V 6A WAFER

Package: Die

Stock5,600
SIDC16D60SIC3
Infineon Technologies

DIODE SCHOTTKY 600V 5A WAFER

Package: Die

Stock7,184
SIDC161D170H
Infineon Technologies

DIODE GEN PURP 1.7KV 300A WAFER

Package: Die

Stock6,816
SIDC14D60F6
Infineon Technologies

DIODE GEN PURP 600V 45A WAFER

Package: Die

Stock2,100
SIDC14D60E6Y
Infineon Technologies

DIODE GEN PURP 600V 30A WAFER

Package: Die

Stock3,360

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SIDC42D120E6	Infineon Technologies	DIODE GEN PURP 1.2KV 50A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 50A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	Package: Die	Stock2,416	1200V	50A (DC)	1.9V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC38D60C6	Infineon Technologies	DIODE GEN PURP 600V 150A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 150A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	Package: Die	Stock4,672	600V	150A (DC)	1.9V @ 150A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC32D170H	Infineon Technologies	DIODE GEN PURP 1.7KV 50A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1700V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	Package: Die	Stock5,760	1700V	50A (DC)	1.8V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1700V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC30D60E6	Infineon Technologies	DIODE GEN PURP 600V 75A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 75A (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 75A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	Package: Die	Stock6,624	600V	75A (DC)	1.25V @ 75A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC30D120H6	Infineon Technologies	DIODE GEN PURP 1.2KV 50A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 50A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	Package: Die	Stock4,448	1200V	50A (DC)	1.6V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC30D120F6	Infineon Technologies	DIODE GEN PURP 1.2KV 35A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 35A (DC) Voltage - Forward (Vf) (Max) @ If: 2.1V @ 35A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	Package: Die	Stock7,232	1200V	35A (DC)	2.1V @ 35A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC30D120E6	Infineon Technologies	DIODE GEN PURP 1.2KV 35A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 35A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 35A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	Package: Die	Stock4,832	1200V	35A (DC)	1.9V @ 35A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC26D60C6	Infineon Technologies	DIODE GEN PURP 600V 100A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 100A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 100A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	Package: Die	Stock6,288	600V	100A (DC)	1.9V @ 100A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC24D30SIC3	Infineon Technologies	DIODE SILICON 300V 10A WAFER Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 300V Capacitance @ Vr, F: 600pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 175°C	Package: Die	Stock6,688	300V	10A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	200µA @ 300V	600pF @ 1V, 1MHz	Surface Mount	Die	Sawn on foil	-55°C ~ 175°C
SIDC23D60E6Y	Infineon Technologies	DIODE GEN PURP 600V 50A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 50A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	Package: Die	Stock7,136	600V	50A (DC)	1.25V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC23D60E6	Infineon Technologies	DIODE GEN PURP 600V 50A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 50A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	Package: Die	Stock5,456	600V	50A (DC)	1.25V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC23D120H6	Infineon Technologies	DIODE GEN PURP 1.2KV 35A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 35A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 35A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	Package: Die	Stock5,088	1200V	35A (DC)	1.6V @ 35A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC23D120F6	Infineon Technologies	DIODE GEN PURP 1.2KV 25A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 25A (DC) Voltage - Forward (Vf) (Max) @ If: 2.1V @ 25A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	Package: Die	Stock2,416	1200V	25A (DC)	2.1V @ 25A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC23D120E6	Infineon Technologies	DIODE GEN PURP 1.2KV 25A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 25A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 25A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	Package: Die	Stock4,960	1200V	25A (DC)	1.9V @ 25A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC20D60C6	Infineon Technologies	DIODE GEN PURP 600V 75A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 75A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 75A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	Package: Die	Stock7,056	600V	75A (DC)	1.9V @ 75A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC19D60SIC3	Infineon Technologies	DIODE SCHOTTKY 600V 6A WAFER Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 300pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 175°C	Package: Die	Stock5,600	600V	6A (DC)	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	200µA @ 600V	300pF @ 1V, 1MHz	Surface Mount	Die	Sawn on foil	-55°C ~ 175°C
SIDC16D60SIC3	Infineon Technologies	DIODE SCHOTTKY 600V 5A WAFER Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 170pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 175°C	Package: Die	Stock7,184	600V	5A (DC)	1.7V @ 5A	No Recovery Time > 500mA (Io)	0ns	200µA @ 600V	170pF @ 1V, 1MHz	Surface Mount	Die	Sawn on foil	-55°C ~ 175°C
SIDC161D170H	Infineon Technologies	DIODE GEN PURP 1.7KV 300A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 300A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 300A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1700V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	Package: Die	Stock6,816	1700V	300A (DC)	1.8V @ 300A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1700V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC14D60F6	Infineon Technologies	DIODE GEN PURP 600V 45A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 45A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 45A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C	Package: Die	Stock2,100	600V	45A (DC)	1.6V @ 45A	Fast Recovery =< 500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 150°C
SIDC14D60E6Y	Infineon Technologies	DIODE GEN PURP 600V 30A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	Package: Die	Stock3,360	600V	30A (DC)	1.25V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC14D60E6	Infineon Technologies	DIODE GEN PURP 600V 30A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	Package: Die	Stock5,664	600V	30A (DC)	1.25V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC14D60C6Y	Infineon Technologies	DIODE GEN PURP 600V 50A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 50A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	Package: Die	Stock7,936	600V	50A (DC)	1.9V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC14D60C6	Infineon Technologies	DIODE GEN PURP 600V 50A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 50A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	Package: Die	Stock2,096	600V	50A (DC)	1.9V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC14D120H6	Infineon Technologies	DIODE GEN PURP 1.2KV 25A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 25A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 25A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	Package: Die	Stock4,992	1200V	25A (DC)	1.6V @ 25A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC14D120F6	Infineon Technologies	DIODE GEN PURP 1.2KV 15A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A (DC) Voltage - Forward (Vf) (Max) @ If: 2.1V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	Package: Die	Stock4,896	1200V	15A (DC)	2.1V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC14D120E6	Infineon Technologies	DIODE GEN PURP 1.2KV 15A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	Package: Die	Stock5,328	1200V	15A (DC)	1.9V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC11D60SIC3	Infineon Technologies	DIODE SCHOTTKY 600V 4A WAFER Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 150pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 175°C	Package: Die	Stock5,488	600V	4A (DC)	1.9V @ 4A	No Recovery Time > 500mA (Io)	0ns	200µA @ 600V	150pF @ 1V, 1MHz	Surface Mount	Die	Sawn on foil	-55°C ~ 175°C
SIDC110D170H	Infineon Technologies	DIODE GEN PURP 1.7KV 200A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 200A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1700V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	Package: Die	Stock2,368	1700V	200A (DC)	1.8V @ 200A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1700V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C