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Infineon Technologies |
DIODE SCHOTTKY 30V 500MA SC79-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 500mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300µA @ 30V
- Capacitance @ Vr, F: 15pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: PG-SC79-2
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: SC-79, SOD-523 |
Stock7,264 |
|
30V | 500mA (DC) | 500mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 30V | 15pF @ 5V, 1MHz | Surface Mount | SC-79, SOD-523 | PG-SC79-2 | -55°C ~ 125°C |
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Infineon Technologies |
DIODE SCHOTTKY 30V 2A SOT363-6
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 30V
- Capacitance @ Vr, F: 70pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: 6-VSSOP, SC-88, SOT-363 |
Stock5,840 |
|
30V | 2A (DC) | 600mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | 70pF @ 1V, 1MHz | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 | -55°C ~ 125°C |
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Infineon Technologies |
DIODE GEN PURP 80V 250MA SOT323
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 1µA @ 75V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
- Operating Temperature - Junction: 150°C (Max)
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Package: SC-70, SOT-323 |
Stock5,984 |
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80V | 250mA (DC) | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | SC-70, SOT-323 | PG-SOT323-3 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 40V 120MA SOT23-3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 120mA
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 2µA @ 30V
- Capacitance @ Vr, F: 6pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,368 |
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40V | 120mA | 750mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 30V | 6pF @ 1V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 30V 200MA SOT23-3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 2µA @ 25V
- Capacitance @ Vr, F: 10pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,096 |
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30V | 200mA (DC) | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 70V 70MA SOT23-3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 70V
- Current - Average Rectified (Io): 70mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 100ps
- Current - Reverse Leakage @ Vr: 100nA @ 50V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,976 |
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70V | 70mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 100ps | 100nA @ 50V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | -55°C ~ 125°C |
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Infineon Technologies |
DIODE SCHOTTKY 40V 120MA SOT23-3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 120mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 100ps
- Current - Reverse Leakage @ Vr: 1µA @ 30V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,592 |
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40V | 120mA (DC) | 1V @ 40mA | Small Signal =< 200mA (Io), Any Speed | 100ps | 1µA @ 30V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 30V 500MA SC79-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 500mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 620mV @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25µA @ 30V
- Capacitance @ Vr, F: 10pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: PG-SC79-2
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: SC-79, SOD-523 |
Stock3,456 |
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30V | 500mA (DC) | 620mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 25µA @ 30V | 10pF @ 5V, 1MHz | Surface Mount | SC-79, SOD-523 | PG-SC79-2 | -55°C ~ 125°C |
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Infineon Technologies |
DIODE GEN PURP 80V 250MA SOT23-3
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 1µA @ 75V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,488 |
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80V | 250mA (DC) | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | 150°C (Max) |
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Infineon Technologies |
DIODE GEN PURP 1.7KV 150A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1700V
- Current - Average Rectified (Io): 150A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 150A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 1700V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: Die |
Stock4,032 |
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1700V | 150A (DC) | 1.8V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 600V 200A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 200A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: Die |
Stock4,960 |
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600V | 200A (DC) | 1.25V @ 200A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 150A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 150A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: Die |
Stock6,128 |
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1200V | 150A (DC) | 1.6V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 100A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 100A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 100A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: Die |
Stock3,424 |
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1200V | 100A (DC) | 2.1V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 100A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 100A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 100A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: Die |
Stock5,296 |
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1200V | 100A (DC) | 1.9V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 1.7KV 150A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1700V
- Current - Average Rectified (Io): 150A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 150A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 1700V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: Die |
Stock3,536 |
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1700V | 150A (DC) | 1.8V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 1.7KV 100A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1700V
- Current - Average Rectified (Io): 100A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.15V @ 100A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 1700V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: Die |
Stock6,528 |
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1700V | 100A (DC) | 2.15V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 1.7KV 100A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1700V
- Current - Average Rectified (Io): 100A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 1700V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: Die |
Stock4,448 |
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1700V | 100A (DC) | 1.8V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 600V 150A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 150A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: Die |
Stock6,832 |
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600V | 150A (DC) | 1.25V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 1.7KV 75A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1700V
- Current - Average Rectified (Io): 75A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.15V @ 75A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 1700V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: Die |
Stock3,872 |
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1700V | 75A (DC) | 2.15V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 75A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 75A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 75A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: Die |
Stock7,472 |
|
1200V | 75A (DC) | 2.1V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 75A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 75A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 75A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: Die |
Stock3,456 |
|
1200V | 75A (DC) | 1.9V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 100A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 100A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: Die |
Stock4,432 |
|
1200V | 100A (DC) | 1.6V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
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|
Infineon Technologies |
DIODE GEN PURP 600V 200A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 200A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 200A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: Die |
Stock2,896 |
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600V | 200A (DC) | 1.9V @ 200A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
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|
Infineon Technologies |
DIODE GEN PURP 1.7KV 75A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1700V
- Current - Average Rectified (Io): 75A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 75A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 1700V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: Die |
Stock3,984 |
|
1700V | 75A (DC) | 1.8V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
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|
Infineon Technologies |
DIODE GEN PURP 600V 100A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 100A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: Die |
Stock6,512 |
|
600V | 100A (DC) | 1.25V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
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|
Infineon Technologies |
DIODE GEN PURP 1.7KV 50A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1700V
- Current - Average Rectified (Io): 50A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.15V @ 50A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 1700V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -40°C ~ 150°C
|
Package: Die |
Stock6,992 |
|
1700V | 50A (DC) | 2.15V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 150°C |
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|
Infineon Technologies |
DIODE GEN PURP 1.2KV 75A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 75A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 75A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: Die |
Stock7,184 |
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1200V | 75A (DC) | 1.6V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 50A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 50A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 50A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: Die |
Stock6,960 |
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1200V | 50A (DC) | 2.1V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |