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Infineon Technologies |
DIODE GEN PURP 600V 29.2A TO263
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 29.2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 87ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,848 |
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600V | 29.2A (DC) | 2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 87ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 600V 19.3A TO263
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 19.3A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2V @ 9A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,672 |
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600V | 19.3A (DC) | 2V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 30V 2A SOT363-6
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 30V
- Capacitance @ Vr, F: 70pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: 6-VSSOP, SC-88, SOT-363 |
Stock3,376 |
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30V | 2A (DC) | 600mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | 70pF @ 1V, 1MHz | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 | -55°C ~ 125°C |
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Infineon Technologies |
DIODE SCHOTTKY 40V 120MA SCD80-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 120mA
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 2µA @ 30V
- Capacitance @ Vr, F: 6pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-80
- Supplier Device Package: PG-SCD80-2
- Operating Temperature - Junction: 150°C (Max)
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Package: SC-80 |
Stock4,640 |
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40V | 120mA | 750mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 30V | 6pF @ 1V, 1MHz | Surface Mount | SC-80 | PG-SCD80-2 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 600V 3A TO220-2FP
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 3A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 30µA @ 600V
- Capacitance @ Vr, F: 90pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: PG-TO220-2 Full Pack
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 Full Pack |
Stock3,264 |
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600V | 3A (DC) | 1.9V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 600V | 90pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 2A TO220-2FP
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 15µA @ 600V
- Capacitance @ Vr, F: 60pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: PG-TO220-2 Full Pack
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 Full Pack |
Stock3,360 |
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600V | 2A (DC) | 1.9V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 15µA @ 600V | 60pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 1200V 15A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 15A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 360µA @ 1200V
- Capacitance @ Vr, F: 750pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock2,112 |
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1200V | 15A (DC) | 1.8V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 360µA @ 1200V | 750pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 1200V 10A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 240µA @ 1200V
- Capacitance @ Vr, F: 500pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock3,216 |
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1200V | 10A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 240µA @ 1200V | 500pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 9A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 9A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 9A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 80µA @ 600V
- Capacitance @ Vr, F: 280pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock6,928 |
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600V | 9A (DC) | 2.1V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 1.2KV 7.5A TO220
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 7.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 7.5A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 180µA @ 1200V
- Capacitance @ Vr, F: 380pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock4,480 |
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1200V | 7.5A (DC) | 1.8V @ 7.5A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 1200V | 380pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 6A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.3V @ 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: 130pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock3,536 |
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600V | 6A (DC) | 2.3V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 130pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 5A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.3V @ 5A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 30µA @ 600V
- Capacitance @ Vr, F: 110pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock3,888 |
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600V | 5A (DC) | 2.3V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 600V | 110pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 1200V 5A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 120µA @ 1200V
- Capacitance @ Vr, F: 250pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock5,312 |
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1200V | 5A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 1200V | 250pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 4A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 4A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.3V @ 4A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 25µA @ 600V
- Capacitance @ Vr, F: 80pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock3,264 |
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600V | 4A (DC) | 2.3V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 25µA @ 600V | 80pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 3A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 3A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.3V @ 3A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 15µA @ 600V
- Capacitance @ Vr, F: 60pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock7,344 |
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600V | 3A (DC) | 2.3V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 15µA @ 600V | 60pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 1200V 2A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 48µA @ 1200V
- Capacitance @ Vr, F: 125pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock7,920 |
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1200V | 2A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 48µA @ 1200V | 125pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 10A TO252-3
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 90µA @ 600V
- Capacitance @ Vr, F: 290pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,832 |
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600V | 10A (DC) | 2.1V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 600V | 290pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 9A TO252-3
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 9A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 9A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 80µA @ 600V
- Capacitance @ Vr, F: 280pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,264 |
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600V | 9A (DC) | 2.1V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 8A TO252-3
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 8A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 70µA @ 600V
- Capacitance @ Vr, F: 240pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,192 |
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600V | 8A (DC) | 2.1V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 600V | 240pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO252-3
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 6A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.3V @ 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: 130pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,848 |
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600V | 6A (DC) | 2.3V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 130pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 5A TO252-3
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.3V @ 5A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 30µA @ 600V
- Capacitance @ Vr, F: 110pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,136 |
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600V | 5A (DC) | 2.3V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 600V | 110pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 5.6A TO252-3
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 5.6A
- Voltage - Forward (Vf) (Max) @ If: 2.3V @ 4A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 25µA @ 600V
- Capacitance @ Vr, F: 80pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,040 |
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600V | 5.6A | 2.3V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 25µA @ 600V | 80pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SILICON 600V 10A D2PAK
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 140µA @ 600V
- Capacitance @ Vr, F: 480pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,072 |
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600V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 140µA @ 600V | 480pF @ 1V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 6A D2PAK
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 6A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 80µA @ 600V
- Capacitance @ Vr, F: 280pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,376 |
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600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 30V 200MA SOT323
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 2µA @ 25V
- Capacitance @ Vr, F: 10pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
- Operating Temperature - Junction: 150°C (Max)
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Package: SC-70, SOT-323 |
Stock4,592 |
|
30V | 200mA (DC) | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | SC-70, SOT-323 | PG-SOT323-3 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 30V 200MA SC79-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 2µA @ 25V
- Capacitance @ Vr, F: 10pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: PG-SC79-2
- Operating Temperature - Junction: 150°C (Max)
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Package: SC-79, SOD-523 |
Stock3,536 |
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30V | 200mA (DC) | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | SC-79, SOD-523 | PG-SC79-2 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 45V 750MA SC79-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 750mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 45V
- Capacitance @ Vr, F: 10pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: PG-SC79-2
- Operating Temperature - Junction: 150°C (Max)
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Package: SC-79, SOD-523 |
Stock5,104 |
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45V | 750mA (DC) | 600mV @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 45V | 10pF @ 10V, 1MHz | Surface Mount | SC-79, SOD-523 | PG-SC79-2 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 40V 200MA TSLP-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 40V
- Capacitance @ Vr, F: 12pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-882
- Supplier Device Package: PG-TSLP-2
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: SOD-882 |
Stock6,720 |
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40V | 200mA (DC) | 550mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 10µA @ 40V | 12pF @ 5V, 1MHz | Surface Mount | SOD-882 | PG-TSLP-2 | -55°C ~ 150°C |