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Infineon Technologies |
DIODE SCHOTTKY 650V 16A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 16A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 16A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 550µA @ 650V
- Capacitance @ Vr, F: 470pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock4,144 |
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650V | 16A (DC) | 1.7V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 550µA @ 650V | 470pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 9A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 9A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 9A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 310µA @ 650V
- Capacitance @ Vr, F: 270pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock6,880 |
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650V | 9A (DC) | 1.7V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 310µA @ 650V | 270pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 20A TO247-3
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 20A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 700µA @ 650V
- Capacitance @ Vr, F: 590pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-247-3 |
Stock2,352 |
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650V | 20A (DC) | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 700µA @ 650V | 590pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 12A TO247-3
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 500µA @ 650V
- Capacitance @ Vr, F: 360pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-247-3 |
Stock6,064 |
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650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 500µA @ 650V | 360pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 4A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 4A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 140µA @ 650V
- Capacitance @ Vr, F: 130pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock3,264 |
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650V | 4A (DC) | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 140µA @ 650V | 130pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 6A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 6A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 210µA @ 650V
- Capacitance @ Vr, F: 190pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock5,552 |
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650V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 210µA @ 650V | 190pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 3A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 3A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: 100pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock7,504 |
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650V | 3A (DC) | 1.7V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 100pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO247-3
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 400µA @ 650V
- Capacitance @ Vr, F: 300pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-247-3 |
Stock5,344 |
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650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 20A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 20A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 700µA @ 650V
- Capacitance @ Vr, F: 590pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock5,232 |
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650V | 20A (DC) | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 700µA @ 650V | 590pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 30A TO247-3
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 30A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 1.1mA @ 650V
- Capacitance @ Vr, F: 860pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-247-3 |
Stock6,352 |
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650V | 30A (DC) | 1.7V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 1.1mA @ 650V | 860pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 8A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 280µA @ 650V
- Capacitance @ Vr, F: 250pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock2,576 |
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650V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 280µA @ 650V | 250pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 5A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 170µA @ 650V
- Capacitance @ Vr, F: 160pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock2,160 |
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650V | 5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 170µA @ 650V | 160pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 340µA @ 650V
- Capacitance @ Vr, F: 300pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock2,992 |
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650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 340µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 1.2KV 7.5A TO247
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 7.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 180µA @ 1200V
- Capacitance @ Vr, F: 375pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PG-TO247HC-3
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-247-3 Variant |
Stock2,464 |
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1200V | 7.5A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 1200V | 375pF @ 1V, 1MHz | Through Hole | TO-247-3 Variant | PG-TO247HC-3 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 1.2KV 5A TO247HC
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 120µA @ 1200V
- Capacitance @ Vr, F: 250pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PG-TO247HC-3
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-247-3 Variant |
Stock2,096 |
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1200V | 5A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 1200V | 250pF @ 1V, 1MHz | Through Hole | TO-247-3 Variant | PG-TO247HC-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 600V 21A TO22FP
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 21A
- Voltage - Forward (Vf) (Max) @ If: 2.05V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 130ns
- Current - Reverse Leakage @ Vr: 40µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: PG-TO220-2 Full Pack
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 Full Pack |
Stock7,632 |
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600V | 21A | 2.05V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 130ns | 40µA @ 600V | - | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 600V 41A TO263-3
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 41A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2V @ 23A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 120ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,952 |
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600V | 41A (DC) | 2V @ 23A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 28A TO263-3
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 28A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.15V @ 12A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,264 |
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1200V | 28A (DC) | 2.15V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 100µA @ 1200V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO220-2FP
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 6A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 80µA @ 600V
- Capacitance @ Vr, F: 280pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: PG-TO220-2 Full Pack
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 Full Pack |
Stock6,640 |
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600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 5A TO220-2FP
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 70µA @ 600V
- Capacitance @ Vr, F: 240pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: PG-TO220-2 Full Pack
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 Full Pack |
Stock7,808 |
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600V | 5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 600V | 240pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 4A TO220-2FP
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 4A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: 130pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: PG-TO220-2 Full Pack
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 Full Pack |
Stock7,600 |
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600V | 4A (DC) | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 130pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 600V 41A TO220-2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 41A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2V @ 23A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 120ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock2,096 |
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600V | 41A (DC) | 2V @ 23A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 50µA @ 600V | - | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 23A TO220-2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 23A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.15V @ 9A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 140ns
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 |
Stock7,888 |
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1200V | 23A (DC) | 2.15V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 600V 14.7A TO220
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 14.7A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 70ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock143,376 |
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600V | 14.7A (DC) | 2V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 50µA @ 600V | - | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 11.2A TO220
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 11.2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.15V @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 115ns
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 |
Stock40,020 |
|
1200V | 11.2A (DC) | 2.15V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 115ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 600V 7.3A TO252-3
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 7.3A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 62ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,944 |
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600V | 7.3A (DC) | 2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 62ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 600V 71A TO263-3
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 71A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2V @ 45A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 140ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,480 |
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600V | 71A (DC) | 2V @ 45A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 31A TO263-3
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 31A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.15V @ 18A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 195ns
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,792 |
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1200V | 31A (DC) | 2.15V @ 18A | Fast Recovery =< 500ns, > 200mA (Io) | 195ns | 100µA @ 1200V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | -55°C ~ 150°C |