Page 3 - Renesas Electronics America Products - Transistors - FETs, MOSFETs - Single

RJK1575DPA-00#J5A
Renesas Electronics America

MOSFET N-CH 150V WPAK

Package: 8-PowerVDFN

Stock2,672
NP82N055PUG-E1-AY
Renesas Electronics America

MOSFET N-CH 55V 82A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,624
RJK6032DPH-E0#T2
Renesas Electronics America

MOSFET N-CH 600V 3A TO251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,216
RJK2075DPA-00#J5A
Renesas Electronics America

MOSFET N-CH 200V 20A WPAK(3F)

Package: 8-PowerVDFN

Stock12,456
RJK1056DPB-00#J5
Renesas Electronics America

MOSFET N-CH 100V 25A LFPAK

Package: SC-100, SOT-669

Stock24,744
RJK0856DPB-00#J5
Renesas Electronics America

MOSFET N-CH 80V 35A LFPAK

Package: SC-100, SOT-669

Stock3,232
RJK0656DPB-00#J5
Renesas Electronics America

MOSFET N-CH 60V 40A LFPAK

Package: SC-100, SOT-669

Stock6,928
RJK0456DPB-00#J5
Renesas Electronics America

MOSFET N-CH 40V LFPAK

Package: SC-100, SOT-669

Stock6,304
HAT2166H-EL-E
Renesas Electronics America

MOSFET N-CH 30V 45A LFPAK

Package: SC-100, SOT-669

Stock90,000
RJK2076DPA-00#J5A
Renesas Electronics America

MOSFET N-CH 200V 20A WPAK

Package: 8-PowerVDFN

Stock4,368
2SK3484-AZ
Renesas Electronics America

MOSFET N-CH 100V MP-3/TO-251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock27,264
HAT2261H-EL-E
Renesas Electronics America

MOSFET N-CH 30V 45A LFPAK

Package: SC-100, SOT-669

Stock2,048
HAT2164H-EL-E
Renesas Electronics America

MOSFET N-CH 30V 60A 5LFPAK

Package: SC-100, SOT-669

Stock29,928
RJK0855DPB-00#J5
Renesas Electronics America

MOSFET N-CH 80V 30A LFPAK

Package: SC-100, SOT-669

Stock7,848
RJK0655DPB-00#J5
Renesas Electronics America

MOSFET N-CH 60V 35A LFPAK

Package: SC-100, SOT-669

Stock6,768
RJK0455DPB-00#J5
Renesas Electronics America

MOSFET N-CH 40V 45A LFPAK

Package: SC-100, SOT-669

Stock7,952
RJK0301DPB-02#J0
Renesas Electronics America

MOSFET N-CH 30V 60A 5-LFPAK

Package: SC-100, SOT-669

Stock2,448
RJK03M5DNS-00#J5
Renesas Electronics America

MOSFET N-CH 30V 25A HWSON

Package: 8-PowerWDFN

Stock6,976
HAT2266H-EL-E
Renesas Electronics America

MOSFET N-CH 60V 30A LFPAK

Package: SC-100, SOT-669

Stock7,808
RJK0853DPB-00#J5
Renesas Electronics America

MOSFET N-CH 80V 40A LFPAK

Package: SC-100, SOT-669

Stock6,224

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
RJK1575DPA-00#J5A	Renesas Electronics America	MOSFET N-CH 150V WPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 48 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: WPAK(3F) (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock2,672	MOSFET (Metal Oxide)	150V	25A (Ta)	10V	-	37nC @ 10V	2200pF @ 25V	±30V	-	65W (Tc)	48 mOhm @ 12.5A, 10V	150°C (TJ)	Surface Mount	WPAK(3F) (5x6)	8-PowerVDFN
NP82N055PUG-E1-AY	Renesas Electronics America	MOSFET N-CH 55V 82A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 143W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 41A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,624	MOSFET (Metal Oxide)	55V	82A (Tc)	10V	4V @ 250µA	160nC @ 10V	9600pF @ 25V	±20V	-	1.8W (Ta), 143W (Tc)	5.2 mOhm @ 41A, 10V	175°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RJK6032DPH-E0#T2	Renesas Electronics America	MOSFET N-CH 600V 3A TO251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40.3W (Tc) Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,216	MOSFET (Metal Oxide)	600V	3A (Ta)	10V	-	9nC @ 10V	285pF @ 25V	±30V	-	40.3W (Tc)	4.3 Ohm @ 1.5A, 10V	150°C (TJ)	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA
RJK2075DPA-00#J5A	Renesas Electronics America	MOSFET N-CH 200V 20A WPAK(3F) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 65W (Ta) Rds On (Max) @ Id, Vgs: 69 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: WPAK(3F) (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock12,456	MOSFET (Metal Oxide)	200V	20A (Ta)	10V	-	38nC @ 10V	2200pF @ 25V	±30V	-	65W (Ta)	69 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	WPAK(3F) (5x6)	8-PowerVDFN
RJK1056DPB-00#J5	Renesas Electronics America	MOSFET N-CH 100V 25A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock24,744	MOSFET (Metal Oxide)	100V	25A (Ta)	10V	-	41nC @ 10V	3000pF @ 10V	±20V	-	65W (Tc)	14 mOhm @ 12.5A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
RJK0856DPB-00#J5	Renesas Electronics America	MOSFET N-CH 80V 35A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 17.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock3,232	MOSFET (Metal Oxide)	80V	35A (Ta)	10V	-	40nC @ 10V	3000pF @ 10V	±20V	-	65W (Tc)	8.9 mOhm @ 17.5A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
RJK0656DPB-00#J5	Renesas Electronics America	MOSFET N-CH 60V 40A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock6,928	MOSFET (Metal Oxide)	60V	40A (Ta)	10V	-	40nC @ 10V	3000pF @ 10V	±20V	-	65W (Tc)	5.6 mOhm @ 20A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
RJK0456DPB-00#J5	Renesas Electronics America	MOSFET N-CH 40V LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 25A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock6,304	MOSFET (Metal Oxide)	40V	50A (Ta)	10V	-	39nC @ 10V	3000pF @ 10V	±20V	-	65W (Tc)	3.2 mOhm @ 25A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
HAT2166H-EL-E	Renesas Electronics America	MOSFET N-CH 30V 45A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 22.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock90,000	MOSFET (Metal Oxide)	30V	45A (Ta)	4.5V, 10V	2.5V @ 1mA	27nC @ 4.5V	4400pF @ 10V	±20V	-	25W (Tc)	3.8 mOhm @ 22.5A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
RJK2076DPA-00#J5A	Renesas Electronics America	MOSFET N-CH 200V 20A WPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: WPAK(3F) (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock4,368	MOSFET (Metal Oxide)	200V	20A (Ta)	10V	-	19nC @ 10V	1200pF @ 25V	±30V	-	65W (Tc)	85 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	WPAK(3F) (5x6)	8-PowerVDFN
2SK3484-AZ	Renesas Electronics America	MOSFET N-CH 100V MP-3/TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (MP-3) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock27,264	MOSFET (Metal Oxide)	100V	16A (Tc)	4.5V, 10V	-	20nC @ 10V	900pF @ 10V	±20V	-	1W (Ta), 30W (Tc)	125 mOhm @ 8A, 10V	150°C (TJ)	Through Hole	TO-251 (MP-3)	TO-251-3 Short Leads, IPak, TO-251AA
HAT2261H-EL-E	Renesas Electronics America	MOSFET N-CH 30V 45A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 22.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock2,048	MOSFET (Metal Oxide)	30V	45A (Ta)	4.5V, 10V	-	27nC @ 4.5V	4400pF @ 10V	±20V	-	25W (Tc)	3.8 mOhm @ 22.5A, 10V	150°C (TJ)	Surface Mount	5-LFPAK	SC-100, SOT-669
HAT2164H-EL-E	Renesas Electronics America	MOSFET N-CH 30V 60A 5LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock29,928	MOSFET (Metal Oxide)	30V	60A (Ta)	4.5V, 10V	-	50nC @ 4.5V	7600pF @ 10V	±20V	-	30W (Tc)	3.1 mOhm @ 30A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
RJK0855DPB-00#J5	Renesas Electronics America	MOSFET N-CH 80V 30A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock7,848	MOSFET (Metal Oxide)	80V	30A (Ta)	10V	-	35nC @ 10V	2550pF @ 10V	±20V	-	60W (Tc)	11 mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
RJK0655DPB-00#J5	Renesas Electronics America	MOSFET N-CH 60V 35A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 17.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock6,768	MOSFET (Metal Oxide)	60V	35A (Ta)	10V	-	35nC @ 10V	2550pF @ 10V	±20V	-	60W (Tc)	6.7 mOhm @ 17.5A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
RJK0455DPB-00#J5	Renesas Electronics America	MOSFET N-CH 40V 45A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 22.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock7,952	MOSFET (Metal Oxide)	40V	45A (Ta)	10V	-	34nC @ 10V	2550pF @ 10V	±20V	-	60W (Tc)	3.8 mOhm @ 22.5A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
RJK0301DPB-02#J0	Renesas Electronics America	MOSFET N-CH 30V 60A 5-LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 10V Vgs (Max): +16V, -12V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock2,448	MOSFET (Metal Oxide)	30V	60A (Ta)	4.5V, 10V	-	32nC @ 4.5V	5000pF @ 10V	+16V, -12V	-	65W (Tc)	2.8 mOhm @ 30A, 10V	150°C (TJ)	Surface Mount	5-LFPAK	SC-100, SOT-669
RJK03M5DNS-00#J5	Renesas Electronics America	MOSFET N-CH 30V 25A HWSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HWSON (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock6,976	MOSFET (Metal Oxide)	30V	25A (Ta)	4.5V, 10V	-	10.4nC @ 4.5V	1890pF @ 10V	±20V	-	15W (Tc)	6.3 mOhm @ 12.5A, 10V	150°C (TJ)	Surface Mount	8-HWSON (3.3x3.3)	8-PowerWDFN
HAT2266H-EL-E	Renesas Electronics America	MOSFET N-CH 60V 30A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 23W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock7,808	MOSFET (Metal Oxide)	60V	30A (Ta)	4.5V, 10V	2.5V @ 1mA	25nC @ 4.5V	3600pF @ 10V	±20V	-	23W (Tc)	12 mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
RJK0853DPB-00#J5	Renesas Electronics America	MOSFET N-CH 80V 40A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6170pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock6,224	MOSFET (Metal Oxide)	80V	40A (Ta)	4.5V, 10V	-	40nC @ 4.5V	6170pF @ 10V	±20V	-	65W (Tc)	8 mOhm @ 20A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
RJK0653DPB-00#J5	Renesas Electronics America	MOSFET N-CH 60V 45A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 22.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock6,464	MOSFET (Metal Oxide)	60V	45A (Ta)	4.5V, 10V	2.5V @ 1mA	42nC @ 4.5V	6100pF @ 10V	±20V	-	65W (Tc)	4.8 mOhm @ 22.5A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
RJK1054DPB-00#J5	Renesas Electronics America	MOSFET N-CH 100V LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock4,048	MOSFET (Metal Oxide)	100V	20A (Ta)	10V	-	27nC @ 10V	2000pF @ 10V	±20V	-	55W (Tc)	22 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
NP50P04SDG-E1-AY	Renesas Electronics America	MOSFET P-CH 40V 50A TO-252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 84W (Tc) Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 25A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (MP-3ZK) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock64,368	MOSFET (Metal Oxide)	40V	50A (Tc)	4.5V, 10V	2.5V @ 250µA	100nC @ 10V	5000pF @ 10V	±20V	-	1.2W (Ta), 84W (Tc)	9.6 mOhm @ 25A, 10V	175°C (TJ)	Surface Mount	TO-252 (MP-3ZK)	TO-252-3, DPak (2 Leads + Tab), SC-63
N0603N-S23-AY	Renesas Electronics America	MOSFET N-CH 60V 100A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7730pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,392	MOSFET (Metal Oxide)	60V	100A (Ta)	10V	-	133nC @ 10V	7730pF @ 25V	±20V	-	1.5W (Ta), 156W (Tc)	4.6 mOhm @ 50A, 10V	150°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
UPA2764T1A-E2-AY	Renesas Electronics America	MOSFET N-CH 30V 130A 8SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 130A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7930pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2.45 mOhm @ 35A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HVSON (5.4x5.15) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock3,936	MOSFET (Metal Oxide)	30V	130A (Ta)	4.5V, 10V	-	180nC @ 10V	7930pF @ 10V	±20V	-	1.5W (Ta), 83W (Tc)	2.45 mOhm @ 35A, 4.5V	150°C (TJ)	Surface Mount	8-HVSON (5.4x5.15)	8-PowerVDFN
RJK5033DPD-00#J2	Renesas Electronics America	MOSFET N-CH 500V 6A MP3A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MP-3A Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,312	MOSFET (Metal Oxide)	500V	6A (Ta)	10V	-	-	600pF @ 25V	±30V	-	65W (Tc)	1.3 Ohm @ 3A, 10V	150°C (TJ)	Surface Mount	MP-3A	TO-252-3, DPak (2 Leads + Tab), SC-63
RJK03M1DPA-00#J5A	Renesas Electronics America	MOSFET N-CH 30V 50A WPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4720pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WPAK Package / Case: 8-WFDFN Exposed Pad	Package: 8-WFDFN Exposed Pad	Stock7,120	MOSFET (Metal Oxide)	30V	50A (Ta)	4.5V, 10V	-	25nC @ 4.5V	4720pF @ 10V	±20V	-	45W (Tc)	2.3 mOhm @ 25A, 10V	150°C (TJ)	Surface Mount	8-WPAK	8-WFDFN Exposed Pad
UPA2766T1A-E1-AY	Renesas Electronics America	MOSFET N-CH 30V 130A 8SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 130A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 257nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10850pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 1.82 mOhm @ 39A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HVSON (5.4x5.15) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock3,856	MOSFET (Metal Oxide)	30V	130A (Ta)	4.5V, 10V	-	257nC @ 10V	10850pF @ 10V	±20V	-	1.5W (Ta), 83W (Tc)	1.82 mOhm @ 39A, 4.5V	150°C (TJ)	Surface Mount	8-HVSON (5.4x5.15)	8-PowerVDFN