Page 5 - Renesas Electronics America Products - Transistors - FETs, MOSFETs - Single

2SK3481-AZ
Renesas Electronics America

MOSFET N-CH 100V MP-25/TO-220

Package: TO-220-3

Stock3,824
2SJ673-AZ
Renesas Electronics America

MOSFET P-CH 60V 36A TO-220

Package: TO-220-3 Isolated Tab

Stock118,308
HAT2172H-EL-E
Renesas Electronics America

MOSFET N-CH 40V 30A LFPAK

Package: SC-100, SOT-669

Stock133,044
HAT1072H-EL-E
Renesas Electronics America

MOSFET P-CH 30V 40A LFPAK

Package: SC-100, SOT-669

Stock96,000
HAT2141H-EL-E
Renesas Electronics America

MOSFET N-CH 100V 15A 5LFPAK

Package: SC-100, SOT-669

Stock75,972
HAT2197R-EL-E
Renesas Electronics America

MOSFET N-CH 30V 16A 8SOP

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,888
HAT2175H-EL-E
Renesas Electronics America

MOSFET N-CH 100V 15A 5LFPAK

Package: SC-100, SOT-669

Stock103,380
HAT2267H-EL-E
Renesas Electronics America

MOSFET N-CH 80V 25A 5LFPAK

Package: SC-100, SOT-669

Stock12,444
HAT2174H-EL-E
Renesas Electronics America

MOSFET N-CH 100V 20A 5LFPAK

Package: SC-100, SOT-669

Stock95,220
HAT2143H-EL-E
Renesas Electronics America

MOSFET N-CH 30V 40A 5LFPAK

Package: SC-100, SOT-669

Stock6,208
HAT2140H-EL-E
Renesas Electronics America

MOSFET N-CH 100V 25A 5LFPAK

Package: SC-100, SOT-669

Stock23,820
HAT2088R-EL-E
Renesas Electronics America

MOSFET N-CH 200V 2A 8SOP

Package: 8-SOIC (0.154", 3.90mm Width)

Stock28,752
HAF1002-90STL-E
Renesas Electronics America

MOSFET P-CH 60V 15A 4LDPAK

Package: SC-83

Stock3,120
2SK2315TYTR-E
Renesas Electronics America

MOSFET N-CH 60V 2A 4-UPAK

Package: TO-243AA

Stock6,032
2SK2221-E
Renesas Electronics America

MOSFET N-CH 200V 8A TO-3P

Package: TO-3P-3, SC-65-3

Stock2,944
2SK1058-E
Renesas Electronics America

MOSFET N-CH 160V 7A TO-3P

Package: TO-3P-3, SC-65-3

Stock5,280
2SJ162-E
Renesas Electronics America

MOSFET P-CH 160V 7A TO-3P

Package: TO-3P-3, SC-65-3

Stock3,536
HAT2116H-EL-E
Renesas Electronics America

MOSFET N-CH 30V 30A LFPAK

Package: SC-100, SOT-669

Stock777,588
HAT2099H-EL-E
Renesas Electronics America

MOSFET N-CH 30V 50A LFPAK

Package: SC-100, SOT-669

Stock48,960
HAT2096H-EL-E
Renesas Electronics America

MOSFET N-CH 30V 40A LFPAK

Package: SC-100, SOT-669

Stock654,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
2SK3481-AZ	Renesas Electronics America	MOSFET N-CH 100V MP-25/TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 56W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,824	MOSFET (Metal Oxide)	100V	30A (Tc)	4.5V, 10V	-	48nC @ 10V	2300pF @ 10V	±20V	-	1.5W (Ta), 56W (Tc)	50 mOhm @ 15A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
2SJ673-AZ	Renesas Electronics America	MOSFET P-CH 60V 36A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 32W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Isolated Tab	Package: TO-220-3 Isolated Tab	Stock118,308	MOSFET (Metal Oxide)	60V	36A (Tc)	4V, 10V	-	87nC @ 10V	4600pF @ 10V	±20V	-	2W (Ta), 32W (Tc)	20 mOhm @ 18A, 10V	150°C (TJ)	Through Hole	TO-220 Isolated Tab	TO-220-3 Isolated Tab
HAT2172H-EL-E	Renesas Electronics America	MOSFET N-CH 40V 30A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock133,044	MOSFET (Metal Oxide)	40V	30A (Ta)	7V, 10V	3V @ 1mA	32nC @ 10V	2420pF @ 10V	±20V	-	20W (Tc)	7.5 mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
HAT1072H-EL-E	Renesas Electronics America	MOSFET P-CH 30V 40A LFPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 10V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock96,000	MOSFET (Metal Oxide)	30V	40A (Ta)	4.5V, 10V	-	155nC @ 10V	9500pF @ 10V	+10V, -20V	-	30W (Tc)	4.5 mOhm @ 20A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
HAT2141H-EL-E	Renesas Electronics America	MOSFET N-CH 100V 15A 5LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 27.5 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock75,972	MOSFET (Metal Oxide)	100V	15A (Ta)	7V, 10V	-	46nC @ 10V	3200pF @ 10V	±20V	-	20W (Tc)	27.5 mOhm @ 7.5A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
HAT2197R-EL-E	Renesas Electronics America	MOSFET N-CH 30V 16A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,888	MOSFET (Metal Oxide)	30V	16A (Ta)	4.5V, 10V	-	18nC @ 4.5V	2650pF @ 10V	±20V	-	2.5W (Ta)	6.7 mOhm @ 8A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
HAT2175H-EL-E	Renesas Electronics America	MOSFET N-CH 100V 15A 5LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1445pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock103,380	MOSFET (Metal Oxide)	100V	15A (Ta)	8V, 10V	-	21nC @ 10V	1445pF @ 10V	±20V	-	15W (Tc)	42 mOhm @ 7.5A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
HAT2267H-EL-E	Renesas Electronics America	MOSFET N-CH 80V 25A 5LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock12,444	MOSFET (Metal Oxide)	80V	25A (Ta)	6V, 10V	-	30nC @ 10V	2150pF @ 10V	±20V	-	25W (Tc)	16 mOhm @ 12.5A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
HAT2174H-EL-E	Renesas Electronics America	MOSFET N-CH 100V 20A 5LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2280pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock95,220	MOSFET (Metal Oxide)	100V	20A (Ta)	8V, 10V	-	33.5nC @ 10V	2280pF @ 10V	±20V	-	20W (Tc)	27 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
HAT2143H-EL-E	Renesas Electronics America	MOSFET N-CH 30V 40A 5LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock6,208	MOSFET (Metal Oxide)	30V	40A (Ta)	4.5V, 10V	-	40nC @ 10V	2450pF @ 10V	±20V	-	20W (Tc)	6.1 mOhm @ 20A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
HAT2140H-EL-E	Renesas Electronics America	MOSFET N-CH 100V 25A 5LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock23,820	MOSFET (Metal Oxide)	100V	25A (Ta)	7V, 10V	-	105nC @ 10V	6500pF @ 10V	±20V	-	30W (Tc)	16 mOhm @ 12.5A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
HAT2088R-EL-E	Renesas Electronics America	MOSFET N-CH 200V 2A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 440 mOhm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock28,752	MOSFET (Metal Oxide)	200V	2A (Ta)	10V	-	13nC @ 10V	450pF @ 25V	±30V	-	2.5W (Ta)	440 mOhm @ 1A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
HAF1002-90STL-E	Renesas Electronics America	MOSFET P-CH 60V 15A 4LDPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): +3V, -16V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-LDPAK Package / Case: SC-83	Package: SC-83	Stock3,120	MOSFET (Metal Oxide)	60V	15A (Ta)	4V, 10V	-	-	-	+3V, -16V	-	50W (Tc)	90 mOhm @ 7.5A, 10V	150°C (TJ)	Surface Mount	4-LDPAK	SC-83
2SK2315TYTR-E	Renesas Electronics America	MOSFET N-CH 60V 2A 4-UPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 173pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 450 mOhm @ 1A, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UPAK Package / Case: TO-243AA	Package: TO-243AA	Stock6,032	MOSFET (Metal Oxide)	60V	2A (Ta)	3V, 4V	-	-	173pF @ 10V	±20V	-	1W (Ta)	450 mOhm @ 1A, 4V	150°C (TJ)	Surface Mount	UPAK	TO-243AA
2SK2221-E	Renesas Electronics America	MOSFET N-CH 200V 8A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock2,944	MOSFET (Metal Oxide)	200V	8A (Ta)	-	-	-	600pF @ 10V	±20V	-	100W (Tc)	-	150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
2SK1058-E	Renesas Electronics America	MOSFET N-CH 160V 7A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 160V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock5,280	MOSFET (Metal Oxide)	160V	7A (Ta)	-	-	-	600pF @ 10V	±15V	-	100W (Tc)	-	150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
2SJ162-E	Renesas Electronics America	MOSFET P-CH 160V 7A TO-3P FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 160V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock3,536	MOSFET (Metal Oxide)	160V	7A (Ta)	10V	-	-	900pF @ 10V	±15V	-	100W (Tc)	-	150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
HAT2116H-EL-E	Renesas Electronics America	MOSFET N-CH 30V 30A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock777,588	MOSFET (Metal Oxide)	30V	30A (Ta)	4.5V, 10V	-	26nC @ 10V	1650pF @ 10V	±20V	-	15W (Tc)	8.2 mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
HAT2099H-EL-E	Renesas Electronics America	MOSFET N-CH 30V 50A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 25A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock48,960	MOSFET (Metal Oxide)	30V	50A (Ta)	4.5V, 10V	-	75nC @ 10V	4750pF @ 10V	±20V	-	30W (Tc)	3.7 mOhm @ 25A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
HAT2096H-EL-E	Renesas Electronics America	MOSFET N-CH 30V 40A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock654,000	MOSFET (Metal Oxide)	30V	40A (Ta)	4.5V, 10V	-	40nC @ 10V	2200pF @ 10V	±20V	-	20W (Tc)	5.3 mOhm @ 20A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
2SK1835-E	Renesas Electronics America	MOSFET N-CH 1500V 4A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 7 Ohm @ 2A, 15V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock2,528	MOSFET (Metal Oxide)	1500V	4A (Ta)	15V	-	-	1700pF @ 10V	±20V	-	125W (Tc)	7 Ohm @ 2A, 15V	150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
RJK5015DPM-00#T1	Renesas Electronics America	MOSFET N-CH 500V 25A TO3PFM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PFM Package / Case: TO-3PFM, SC-93-3	Package: TO-3PFM, SC-93-3	Stock5,632	MOSFET (Metal Oxide)	500V	25A (Ta)	10V	-	66nC @ 10V	2600pF @ 25V	±30V	-	60W (Tc)	240 mOhm @ 12.5A, 10V	150°C (TJ)	Through Hole	TO-3PFM	TO-3PFM, SC-93-3
RJK1001DPP-E0#T2	Renesas Electronics America	MOSFET N-CH 100V 80A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 147nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 40A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,312	MOSFET (Metal Oxide)	100V	80A (Ta)	10V	-	147nC @ 10V	10000pF @ 10V	±20V	-	30W (Tc)	5.5 mOhm @ 40A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
RJK5015DPK-00#T0	Renesas Electronics America	MOSFET N-CH 500V 25A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Ta) Rds On (Max) @ Id, Vgs: 240 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock6,400	MOSFET (Metal Oxide)	500V	25A (Ta)	10V	-	66nC @ 10V	2600pF @ 25V	±30V	-	150W (Ta)	240 mOhm @ 12.5A, 10V	150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
2SK1317-E	Renesas Electronics America	MOSFET N-CH 1500V 2.5A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 12 Ohm @ 2A, 15V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock15,804	MOSFET (Metal Oxide)	1500V	2.5A (Ta)	15V	-	-	990pF @ 10V	±20V	-	100W (Tc)	12 Ohm @ 2A, 15V	150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
RJK2508DPK-00#T0	Renesas Electronics America	MOSFET N-CH 250V 50A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 64 mOhm @ 25A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock7,344	MOSFET (Metal Oxide)	250V	50A (Ta)	10V	-	60nC @ 10V	2600pF @ 25V	±30V	-	150W (Tc)	64 mOhm @ 25A, 10V	-	Through Hole	TO-3P	TO-3P-3, SC-65-3
RJK1002DPN-E0#T2	Renesas Electronics America	MOSFET N-CH 100V 70A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 35A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,376	MOSFET (Metal Oxide)	100V	70A (Ta)	10V	-	94nC @ 10V	6450pF @ 10V	±20V	-	150W (Tc)	7.6 mOhm @ 35A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
RJK0602DPN-E0#T2	Renesas Electronics America	MOSFET N-CH 60V 100A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 110A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,384	MOSFET (Metal Oxide)	60V	110A (Ta)	10V	-	90nC @ 10V	6450pF @ 10V	±20V	-	150W (Tc)	3.9 mOhm @ 50A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3