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Renesas Electronics America |
MOSFET N-CH 40V 60A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
- Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 30A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,160 |
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MOSFET (Metal Oxide) | 40V | 60A (Tc) | 10V | 4V @ 250µA | 95nC @ 10V | 5100pF @ 25V | ±20V | - | 1.8W (Ta), 88W (Tc) | 6.1 mOhm @ 30A, 10V | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 30V 60A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
- Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 30A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,576 |
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MOSFET (Metal Oxide) | 30V | 60A (Tc) | 10V | 4V @ 250µA | 93nC @ 10V | 5300pF @ 25V | ±20V | - | 1.8W (Ta), 88W (Tc) | 4.8 mOhm @ 30A, 10V | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 55V 55A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 77W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 28A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (MP-3ZK)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock180,780 |
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MOSFET (Metal Oxide) | 55V | 55A (Tc) | 10V | - | 90nC @ 10V | 5250pF @ 25V | ±20V | - | 1.2W (Ta), 77W (Tc) | 10 mOhm @ 28A, 10V | 175°C (TJ) | Surface Mount | TO-252 (MP-3ZK) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 55V 55A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 77W (Tc)
- Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 28A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (MP-3ZK)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock120,012 |
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MOSFET (Metal Oxide) | 55V | 55A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 96nC @ 10V | 4800pF @ 25V | ±20V | - | 1.2W (Ta), 77W (Tc) | 9.5 mOhm @ 28A, 10V | 175°C (TJ) | Surface Mount | TO-252 (MP-3ZK) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 30V 55A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 77W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 28A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (MP-3ZK)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock125,184 |
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MOSFET (Metal Oxide) | 30V | 55A (Tc) | 10V | 4V @ 250µA | 93nC @ 10V | 5300pF @ 25V | ±20V | - | 1.2W (Ta), 77W (Tc) | 5 mOhm @ 28A, 10V | 175°C (TJ) | Surface Mount | TO-252 (MP-3ZK) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET P-CH 60V 50A TO-263
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 25A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,440 |
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MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 95nC @ 10V | 5000pF @ 10V | ±20V | - | 1.8W (Ta), 90W (Tc) | 17 mOhm @ 25A, 10V | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET P-CH 40V 50A TO-263
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,824 |
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MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 100nC @ 10V | 5100pF @ 10V | ±20V | - | 1.8W (Ta), 90W (Tc) | 10 mOhm @ 25A, 10V | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 55V 48A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 85W (Tc)
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 24A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,512 |
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MOSFET (Metal Oxide) | 55V | 48A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 60nC @ 10V | 3000pF @ 25V | ±20V | - | 1.8W (Ta), 85W (Tc) | 17 mOhm @ 24A, 10V | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET P-CH 60V 36A TO-252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 18A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (MP-3ZK)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock179,928 |
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MOSFET (Metal Oxide) | 60V | 36A (Tc) | 4.5V, 10V | - | 52nC @ 10V | 3200pF @ 10V | ±20V | - | 1.2W (Ta), 56W (Tc) | 30 mOhm @ 18A, 10V | 175°C (TJ) | Surface Mount | TO-252 (MP-3ZK) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET P-CH 40V 36A TO-263
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 18A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,568 |
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MOSFET (Metal Oxide) | 40V | 36A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 55nC @ 10V | 2800pF @ 10V | ±20V | - | 1.8W (Ta), 56W (Tc) | 17 mOhm @ 18A, 10V | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 55V 22A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 45W (Tc)
- Rds On (Max) @ Id, Vgs: 37 mOhm @ 11A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (MP-3ZK)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock158,064 |
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MOSFET (Metal Oxide) | 55V | 22A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 23nC @ 5V | 1100pF @ 25V | ±20V | - | 1.2W (Ta), 45W (Tc) | 37 mOhm @ 11A, 10V | 175°C (TJ) | Surface Mount | TO-252 (MP-3ZK) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET P-CH 60V 20A TO-252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 38W (Tc)
- Rds On (Max) @ Id, Vgs: 48 mOhm @ 10A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (MP-3ZK)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock183,756 |
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MOSFET (Metal Oxide) | 60V | 20A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 34nC @ 10V | 1650pF @ 10V | ±20V | - | 1.2W (Ta), 38W (Tc) | 48 mOhm @ 10A, 10V | 175°C (TJ) | Surface Mount | TO-252 (MP-3ZK) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET P-CH 40V 20A TO-252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 38W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 10A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (MP-3ZK)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock146,220 |
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MOSFET (Metal Oxide) | 40V | 20A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 34nC @ 10V | 1650pF @ 10V | ±20V | - | 1.2W (Ta), 38W (Tc) | 25 mOhm @ 10A, 10V | 175°C (TJ) | Surface Mount | TO-252 (MP-3ZK) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 40V 180A TO-263-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14250pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 90A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
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Package: TO-263-7, D2Pak (6 Leads + Tab) |
Stock8,784 |
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MOSFET (Metal Oxide) | 40V | 180A (Tc) | 10V | 4V @ 250µA | 230nC @ 10V | 14250pF @ 25V | ±20V | - | 1.8W (Ta), 348W (Tc) | 1.5 mOhm @ 90A, 10V | 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D2Pak (6 Leads + Tab) |
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Renesas Electronics America |
MOSFET N-CH 40V 180A TO-263-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 90A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
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Package: TO-263-7, D2Pak (6 Leads + Tab) |
Stock3,504 |
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MOSFET (Metal Oxide) | 40V | 180A (Tc) | 10V | 4V @ 250µA | 390nC @ 10V | 25700pF @ 25V | ±20V | - | 1.8W (Ta), 288W (Tc) | 1.5 mOhm @ 90A, 10V | 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D2Pak (6 Leads + Tab) |
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Renesas Electronics America |
MOSFET N-CH 40V 160A TO-263-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10350pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
- Rds On (Max) @ Id, Vgs: 2 mOhm @ 80A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
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Package: TO-263-7, D2Pak (6 Leads + Tab) |
Stock5,872 |
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MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 10350pF @ 25V | ±20V | - | 1.8W (Ta), 250W (Tc) | 2 mOhm @ 80A, 10V | 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D2Pak (6 Leads + Tab) |
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Renesas Electronics America |
MOSFET N-CH 40V 160A TO-263-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 15750pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 220W (Tc)
- Rds On (Max) @ Id, Vgs: 2 mOhm @ 80A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
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Package: TO-263-7, D2Pak (6 Leads + Tab) |
Stock15,600 |
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MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 4V @ 250µA | 270nC @ 10V | 15750pF @ 25V | ±20V | - | 1.8W (Ta), 220W (Tc) | 2 mOhm @ 80A, 10V | 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D2Pak (6 Leads + Tab) |
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Renesas Electronics America |
MOSFET N-CH 40V 160A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 15750pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 220W (Tc)
- Rds On (Max) @ Id, Vgs: 2 mOhm @ 80A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
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Package: TO-263-7, D2Pak (6 Leads + Tab) |
Stock6,544 |
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MOSFET (Metal Oxide) | 40V | 160A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 270nC @ 10V | 15750pF @ 25V | ±20V | - | 1.8W (Ta), 220W (Tc) | 2 mOhm @ 80A, 10V | 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D2Pak (6 Leads + Tab) |
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Renesas Electronics America |
MOSFET P-CH 60V 15A TO-252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 7.5A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (MP-3ZK)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock123,480 |
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MOSFET (Metal Oxide) | 60V | 15A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 23nC @ 10V | 1100pF @ 10V | ±20V | - | 1.2W (Ta), 30W (Tc) | 70 mOhm @ 7.5A, 10V | 175°C (TJ) | Surface Mount | TO-252 (MP-3ZK) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET P-CH 40V 15A TO-252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 7.5A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (MP-3ZK)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock120,012 |
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MOSFET (Metal Oxide) | 40V | 15A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 23nC @ 10V | 1100pF @ 10V | ±20V | - | 1.2W (Ta), 30W (Tc) | 40 mOhm @ 7.5A, 10V | 175°C (TJ) | Surface Mount | TO-252 (MP-3ZK) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 40V MP-25ZP/TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
- Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 55A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,344 |
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MOSFET (Metal Oxide) | 40V | 110A (Tc) | 10V | 4V @ 250µA | 390nC @ 10V | 25700pF @ 25V | ±20V | - | 1.8W (Ta), 288W (Tc) | 1.8 mOhm @ 55A, 10V | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 30V MP-25ZP/TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 24600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 55A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,272 |
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MOSFET (Metal Oxide) | 30V | 110A (Tc) | 10V | 4V @ 250µA | 380nC @ 10V | 24600pF @ 25V | ±20V | - | 1.8W (Ta), 288W (Tc) | 1.5 mOhm @ 55A, 10V | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 55V MP-25ZP/TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 110A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10350pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 220W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 55A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,536 |
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MOSFET (Metal Oxide) | 55V | 110A (Ta) | 10V | 4V @ 250µA | 180nC @ 10V | 10350pF @ 25V | ±20V | - | 1.8W (Ta), 220W (Tc) | 3.2 mOhm @ 55A, 10V | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET P-CH 60V 100A TO-263
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,512 |
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MOSFET (Metal Oxide) | 60V | 100A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 300nC @ 10V | 15000pF @ 10V | ±20V | - | 1.8W (Ta), 200W (Tc) | 6 mOhm @ 50A, 10V | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET P-CH 60V 100A TO-263
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,200 |
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MOSFET (Metal Oxide) | 60V | 100A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 300nC @ 10V | 15000pF @ 10V | ±20V | - | 1.8W (Ta), 200W (Tc) | 6 mOhm @ 50A, 10V | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 40V MP-3/TO-251
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 84W (Tc)
- Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 30A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (MP-3)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock2,192 |
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MOSFET (Metal Oxide) | 40V | 60A (Ta) | 4.5V, 10V | - | 96nC @ 10V | 5500pF @ 10V | ±20V | - | 1W (Ta), 84W (Tc) | 5.3 mOhm @ 30A, 10V | 150°C (TJ) | Through Hole | TO-251 (MP-3) | TO-251-3 Short Leads, IPak, TO-251AA |
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Renesas Electronics America |
MOSFET N-CH 100V MP-45F/TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 20W (Tc)
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 6A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Isolated Tab
- Package / Case: TO-220-3 Isolated Tab
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Package: TO-220-3 Isolated Tab |
Stock6,048 |
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MOSFET (Metal Oxide) | 100V | 12A (Tc) | 4.5V, 10V | - | 21nC @ 10V | 900pF @ 10V | ±20V | - | 2W (Ta), 20W (Tc) | 125 mOhm @ 6A, 10V | 150°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Isolated Tab |
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Renesas Electronics America |
MOSFET N-CH 100V MP-3/TO-251
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 40W (Tc)
- Rds On (Max) @ Id, Vgs: 52 mOhm @ 14A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (MP-3)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock4,704 |
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MOSFET (Metal Oxide) | 100V | 28A (Ta) | 4.5V, 10V | - | 49nC @ 10V | 2300pF @ 10V | ±20V | - | 1W (Ta), 40W (Tc) | 52 mOhm @ 14A, 10V | 150°C (TJ) | Through Hole | TO-251 (MP-3) | TO-251-3 Short Leads, IPak, TO-251AA |
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