Page 36 - Rohm Semiconductor Products - Transistors - FETs, MOSFETs - Single

RDR005N25TL
Rohm Semiconductor

MOSFET N-CH 250V 0.5A SC-96-3

Package: SC-96

Stock612,000
RZL025P01TR
Rohm Semiconductor

MOSFET P-CH 12V 2.5A TUMT6

Package: 6-SMD, Flat Leads

Stock3,264
RQ6E035ATTCR
Rohm Semiconductor

MOSFET P-CH 30V 3.5A TSMT

Package: SOT-23-6 Thin, TSOT-23-6

Stock36,360
RQ5H020SPTL
Rohm Semiconductor

MOSFET P-CH 45V 2A TSMT

Package: SC-96

Stock36,360
RQ3E100GNTB
Rohm Semiconductor

MOSFET N-CH 30V 10A 8-HSMT

Package: 8-PowerVDFN

Stock6,848
RW1E025RPT2CR
Rohm Semiconductor

MOSFET P-CH 30V 2.5A WEMT6

Package: SOT-563, SOT-666

Stock384,000
RZF020P01TL
Rohm Semiconductor

MOSFET P-CH 12V 2A TUMT3

Package: 3-SMD, Flat Leads

Stock542,364
RF4E110GNTR
Rohm Semiconductor

MOSFET N-CH 30V 11A 8-HUML

Package: 8-PowerUDFN

Stock5,280
RUR020N02TL
Rohm Semiconductor

MOSFET N-CH 20V 2A TSMT3

Package: SC-96

Stock748,500
RQ5E040AJTCL
Rohm Semiconductor

MOSFET N-CH 30V 4A SC96

Package: SC-96

Stock72,360
RQ5L015SPTL
Rohm Semiconductor

MOSFET P-CH 60V 1.5A TSMT

Package: SC-96

Stock36,360
RRR040P03TL
Rohm Semiconductor

MOSFET P-CH 30V 4A TSMT3

Package: SC-96

Stock910,512
RU1C002UNTCL
Rohm Semiconductor

MOSFET N-CH 20V 0.2A UMT3F

Package: SC-85

Stock7,936
RE1J002YNTCL
Rohm Semiconductor

MOSFET N-CH 1.2V DRIVE EMT3FM

Package: SC-89, SOT-490

Stock5,952
R6035KNZ1C9
Rohm Semiconductor

NCH 600V 35A POWER MOSFET

Package: TO-247-3

Stock10,716
R6030KNZC8
Rohm Semiconductor

NCH 600V 30A POWER MOSFET

Package: TO-3P-3 Full Pack

Stock9,660
R6030KNZ1C9
Rohm Semiconductor

NCH 600V 30A POWER MOSFET

Package: TO-247-3

Stock7,524
R6024KNZ1C9
Rohm Semiconductor

NCH 600V 24A POWER MOSFET

Package: TO-247-3

Stock9,756
R6024KNZC8
Rohm Semiconductor

NCH 600V 24A POWER MOSFET

Package: TO-3P-3 Full Pack

Stock7,128
R6030KNX
Rohm Semiconductor

NCH 600V 30A POWER MOSFET, TO220

Package: TO-220-2 Full Pack

Stock11,376

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
RDR005N25TL	Rohm Semiconductor	MOSFET N-CH 250V 0.5A SC-96-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 540mW (Ta) Rds On (Max) @ Id, Vgs: 8.8 Ohm @ 250mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock612,000	MOSFET (Metal Oxide)	250V	500mA (Ta)	4V, 10V	3V @ 1mA	3.5nC @ 10V	70pF @ 25V	±20V	-	540mW (Ta)	8.8 Ohm @ 250mA, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RZL025P01TR	Rohm Semiconductor	MOSFET P-CH 12V 2.5A TUMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 6V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 61 mOhm @ 2.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT6 Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock3,264	MOSFET (Metal Oxide)	12V	2.5A (Ta)	1.5V, 4.5V	1V @ 1mA	13nC @ 4.5V	1350pF @ 6V	±10V	-	1W (Ta)	61 mOhm @ 2.5A, 4.5V	150°C (TJ)	Surface Mount	TUMT6	6-SMD, Flat Leads
RQ6E035ATTCR	Rohm Semiconductor	MOSFET P-CH 30V 3.5A TSMT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock36,360	MOSFET (Metal Oxide)	30V	3.5A (Ta)	4.5V, 10V	2.5V @ 1mA	10nC @ 10V	475pF @ 15V	±20V	-	1.25W (Ta)	50 mOhm @ 3.5A, 10V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
RQ5H020SPTL	Rohm Semiconductor	MOSFET P-CH 45V 2A TSMT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 540mW (Ta) Rds On (Max) @ Id, Vgs: 190 mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock36,360	MOSFET (Metal Oxide)	45V	2A (Ta)	4V, 10V	3V @ 1mA	9.5nC @ 10V	500pF @ 10V	±20V	-	540mW (Ta)	190 mOhm @ 2A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RQ3E100GNTB	Rohm Semiconductor	MOSFET N-CH 30V 10A 8-HSMT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,848	MOSFET (Metal Oxide)	30V	10A (Ta)	4.5V, 10V	2.5V @ 1mA	7.9nC @ 10V	420pF @ 15V	±20V	-	2W (Ta), 15W (Tc)	11.7 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
RW1E025RPT2CR	Rohm Semiconductor	MOSFET P-CH 30V 2.5A WEMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 75 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WEMT Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock384,000	MOSFET (Metal Oxide)	30V	2.5A (Ta)	4V, 10V	2.5V @ 1mA	5.2nC @ 5V	480pF @ 10V	±20V	-	700mW (Ta)	75 mOhm @ 2.5A, 10V	150°C (TJ)	Surface Mount	6-WEMT	SOT-563, SOT-666
RZF020P01TL	Rohm Semiconductor	MOSFET P-CH 12V 2A TUMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 6V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 105 mOhm @ 2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock542,364	MOSFET (Metal Oxide)	12V	2A (Ta)	1.5V, 4.5V	1V @ 1mA	6.5nC @ 4.5V	770pF @ 6V	±10V	-	800mW (Ta)	105 mOhm @ 2A, 4.5V	150°C (TJ)	Surface Mount	TUMT3	3-SMD, Flat Leads
RF4E110GNTR	Rohm Semiconductor	MOSFET N-CH 30V 11A 8-HUML FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 504pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 11.3 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-HUML2020L8 (2x2) Package / Case: 8-PowerUDFN	Package: 8-PowerUDFN	Stock5,280	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	2.5V @ 250µA	7.4nC @ 10V	504pF @ 15V	±20V	-	2W (Ta)	11.3 mOhm @ 11A, 10V	150°C (TJ)	Surface Mount	6-HUML2020L8 (2x2)	8-PowerUDFN
RUR020N02TL	Rohm Semiconductor	MOSFET N-CH 20V 2A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 540mW (Ta) Rds On (Max) @ Id, Vgs: 105 mOhm @ 2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock748,500	MOSFET (Metal Oxide)	20V	2A (Ta)	1.5V, 4.5V	1V @ 1mA	2nC @ 4.5V	180pF @ 10V	±10V	-	540mW (Ta)	105 mOhm @ 2A, 4.5V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RQ5E040AJTCL	Rohm Semiconductor	MOSFET N-CH 30V 4A SC96 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 37 mOhm @ 4A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock72,360	MOSFET (Metal Oxide)	30V	4A (Ta)	2.5V, 4.5V	1.5V @ 1mA	4.3nC @ 4.5V	480pF @ 15V	±12V	-	1W (Ta)	37 mOhm @ 4A, 4.5V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RQ5L015SPTL	Rohm Semiconductor	MOSFET P-CH 60V 1.5A TSMT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock36,360	MOSFET (Metal Oxide)	60V	1.5A (Ta)	4V, 10V	3V @ 1mA	10nC @ 10V	500pF @ 10V	±20V	-	1W (Ta)	280 mOhm @ 1.5A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RRR040P03TL	Rohm Semiconductor	MOSFET P-CH 30V 4A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock910,512	MOSFET (Metal Oxide)	30V	4A (Ta)	4V, 10V	2.5V @ 1mA	10.5nC @ 5V	1000pF @ 10V	±20V	-	1W (Ta)	45 mOhm @ 4A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RU1C002UNTCL	Rohm Semiconductor	MOSFET N-CH 20V 0.2A UMT3F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 2.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UMT3F Package / Case: SC-85	Package: SC-85	Stock7,936	MOSFET (Metal Oxide)	20V	200mA (Ta)	1.2V, 2.5V	1V @ 1mA	-	25pF @ 10V	±8V	-	150mW (Ta)	1.2 Ohm @ 200mA, 2.5V	150°C (TJ)	Surface Mount	UMT3F	SC-85
RE1J002YNTCL	Rohm Semiconductor	MOSFET N-CH 1.2V DRIVE EMT3FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EMT3F (SOT-416FL) Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock5,952	MOSFET (Metal Oxide)	50V	200mA (Ta)	0.9V, 4.5V	800mV @ 1mA	-	26pF @ 10V	±8V	-	150mW (Ta)	2.2 Ohm @ 200mA, 4.5V	150°C (TJ)	Surface Mount	EMT3F (SOT-416FL)	SC-89, SOT-490
R6035KNZ1C9	Rohm Semiconductor	NCH 600V 35A POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 379W (Tc) Rds On (Max) @ Id, Vgs: 102 mOhm @ 18.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock10,716	MOSFET (Metal Oxide)	600V	35A (Tc)	10V	5V @ 1mA	72nC @ 10V	3000pF @ 25V	±20V	-	379W (Tc)	102 mOhm @ 18.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
R6030KNZC8	Rohm Semiconductor	NCH 600V 30A POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock9,660	MOSFET (Metal Oxide)	600V	30A (Tc)	10V	5V @ 1mA	56nC @ 10V	2350pF @ 25V	±20V	-	86W (Tc)	130 mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
R6030KNZ1C9	Rohm Semiconductor	NCH 600V 30A POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 305W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock7,524	MOSFET (Metal Oxide)	600V	30A (Tc)	10V	5V @ 1mA	56nC @ 10V	2350pF @ 25V	±20V	-	305W (Tc)	130 mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
R6024KNZ1C9	Rohm Semiconductor	NCH 600V 24A POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 11.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock9,756	MOSFET (Metal Oxide)	600V	24A (Tc)	10V	5V @ 1mA	45nC @ 10V	2000pF @ 25V	±20V	-	245W (Tc)	165 mOhm @ 11.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
R6024KNZC8	Rohm Semiconductor	NCH 600V 24A POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 11.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock7,128	MOSFET (Metal Oxide)	600V	24A (Tc)	10V	5V @ 1mA	45nC @ 10V	2000pF @ 25V	±20V	-	74W (Tc)	165 mOhm @ 11.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
R6030KNX	Rohm Semiconductor	NCH 600V 30A POWER MOSFET, TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock11,376	MOSFET (Metal Oxide)	600V	30A (Tc)	10V	5V @ 1mA	56nC @ 10V	2350pF @ 25V	±20V	-	86W (Tc)	130 mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
R6020KNZ1C9	Rohm Semiconductor	NCH 600V 20A POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 231W (Tc) Rds On (Max) @ Id, Vgs: 196 mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock9,156	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	5V @ 1mA	40nC @ 10V	1550pF @ 25V	±20V	-	231W (Tc)	196 mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
R6020KNZC8	Rohm Semiconductor	NCH 600V 20A POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 196 mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock9,900	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	5V @ 1mA	40nC @ 10V	1550pF @ 25V	±20V	-	68W (Tc)	196 mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
R6020KNX	Rohm Semiconductor	MOSFET N-CH 600V 20A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 196 mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock11,568	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	5V @ 1mA	40nC @ 10V	1550pF @ 25V	±20V	Schottky Diode (Isolated)	68W (Tc)	196 mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
R6024KNX	Rohm Semiconductor	NCH 600V 24A POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 11.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock11,664	MOSFET (Metal Oxide)	600V	24A (Tc)	10V	5V @ 1mA	45nC @ 10V	2000pF @ 25V	±20V	-	74W (Tc)	165 mOhm @ 11.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
R6015KNZC8	Rohm Semiconductor	MOSFET N-CH 600V 15A TO3P-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 27.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock9,912	MOSFET (Metal Oxide)	600V	15A (Tc)	10V	5V @ 1mA	27.5nC @ 10V	1050pF @ 25V	±20V	Schottky Diode (Isolated)	60W (Tc)	290 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
R6015KNX	Rohm Semiconductor	NCH 600V 15A POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 27.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3	Package: TO-220-3	Stock17,328	MOSFET (Metal Oxide)	600V	15A (Tc)	10V	5V @ 1mA	27.5nC @ 10V	1050pF @ 25V	±20V	-	60W (Tc)	290 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FM	TO-220-3
R6011KNX	Rohm Semiconductor	MOSFET N-CH 600V 11A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 53W (Tc) Rds On (Max) @ Id, Vgs: 390 mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock8,436	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	5V @ 1mA	22nC @ 10V	740pF @ 25V	±20V	Schottky Diode (Isolated)	53W (Tc)	390 mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
R6009KNX	Rohm Semiconductor	MOSFET N-CH 600V 9A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 535 mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock10,452	MOSFET (Metal Oxide)	600V	9A (Tc)	10V	5V @ 1mA	16.5nC @ 10V	540pF @ 25V	±20V	Schottky Diode (Isolated)	48W (Tc)	535 mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack