|
|
|
Rohm Semiconductor |
MOSFET N-CH 600V 12A LPT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 510 mOhm @ 6A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS (SC-83)
- Package / Case: SC-83
|
Package: SC-83 |
Stock6,096 |
|
MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 5V @ 1mA | 35nC @ 10V | 1300pF @ 25V | ±30V | - | 50W (Tc) | 510 mOhm @ 6A, 10V | 150°C (TJ) | Surface Mount | LPTS (SC-83) | SC-83 |
|
|
|
Rohm Semiconductor |
NCH 600V 20A POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 231W (Tc)
- Rds On (Max) @ Id, Vgs: 196 mOhm @ 9.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,576 |
|
MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 5V @ 1mA | 40nC @ 10V | 1550pF @ 25V | ±20V | - | 231W (Tc) | 196 mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 500V 16A LPT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 325 mOhm @ 8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: SC-83
|
Package: SC-83 |
Stock3,120 |
|
MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 5V @ 1mA | 46nC @ 10V | 1700pF @ 25V | ±30V | - | 50W (Tc) | 325 mOhm @ 8A, 10V | 150°C (TJ) | Surface Mount | LPTS | SC-83 |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 200V 45A LPTS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 22.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: SC-83
|
Package: SC-83 |
Stock80,820 |
|
MOSFET (Metal Oxide) | 200V | 45A (Tc) | 10V | 5V @ 1mA | 80nC @ 10V | 4200pF @ 25V | ±30V | - | 1.56W (Ta), 40W (Tc) | 55 mOhm @ 22.5A, 10V | 150°C (TJ) | Surface Mount | LPTS | SC-83 |
|
|
|
Rohm Semiconductor |
MOSFET P-CH 100V 25A LPTS
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 63 mOhm @ 25A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: SC-83
|
Package: SC-83 |
Stock5,952 |
|
MOSFET (Metal Oxide) | 100V | 25A (Ta) | 4V, 10V | 2.5V @ 1mA | 60nC @ 5V | 8000pF @ 25V | ±20V | - | 50W (Tc) | 63 mOhm @ 25A, 10V | 150°C (TJ) | Surface Mount | LPTS | SC-83 |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 600V 20A LPT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 196 mOhm @ 9.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS (D2PAK)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,000 |
|
MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 4V @ 1mA | 60nC @ 10V | 1400pF @ 25V | ±20V | - | 40W (Tc) | 196 mOhm @ 9.5A, 10V | 150°C (TJ) | Surface Mount | LPTS (D2PAK) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 250V 22A LPTS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS (SC-83)
- Package / Case: SC-83
|
Package: SC-83 |
Stock6,784 |
|
MOSFET (Metal Oxide) | 250V | 22A (Tc) | 10V | 5V @ 1mA | 60nC @ 10V | 3200pF @ 25V | ±30V | - | 1.56W (Ta), 40W (Tc) | 140 mOhm @ 11A, 10V | 150°C (TJ) | Surface Mount | LPTS (SC-83) | SC-83 |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 600V 9A LPT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 535 mOhm @ 2.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS (D2PAK)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,088 |
|
MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 4V @ 1mA | 23nC @ 10V | 430pF @ 25V | ±20V | - | 40W (Tc) | 535 mOhm @ 2.8A, 10V | 150°C (TJ) | Surface Mount | LPTS (D2PAK) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 200V 20A LPTS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 10A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: SC-83
|
Package: SC-83 |
Stock4,416 |
|
MOSFET (Metal Oxide) | 200V | 20A (Tc) | 10V | 5V @ 1mA | 40nC @ 10V | 1900pF @ 25V | ±30V | - | 1.56W (Ta), 40W (Tc) | 130 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | LPTS | SC-83 |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 500V 9A LPT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 840 mOhm @ 4.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: SC-83
|
Package: SC-83 |
Stock4,240 |
|
MOSFET (Metal Oxide) | 500V | 9A (Tc) | 10V | 4V @ 1mA | 18nC @ 10V | 630pF @ 25V | ±30V | - | 50W (Tc) | 840 mOhm @ 4.5A, 10V | 150°C (TJ) | Surface Mount | LPTS | SC-83 |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 600V 11A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 124W (Tc)
- Rds On (Max) @ Id, Vgs: 390 mOhm @ 3.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,904 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 5V @ 1mA | 22nC @ 10V | 740pF @ 25V | ±20V | Schottky Diode (Isolated) | 124W (Tc) | 390 mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Rohm Semiconductor |
MOSFET P-CH 30V 10A SOP8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 650mW (Ta)
- Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 10A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,440 |
|
MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4V, 10V | 2.5V @ 1mA | 68nC @ 10V | 3600pF @ 10V | ±20V | - | 650mW (Ta) | 12.6 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 600V 7A LPT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 620 mOhm @ 2.4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS (D2PAK)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,584 |
|
MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 4V @ 1mA | 20nC @ 10V | 390pF @ 25V | ±20V | - | 40W (Tc) | 620 mOhm @ 2.4A, 10V | 150°C (TJ) | Surface Mount | LPTS (D2PAK) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 250V 10A LPT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
- Rds On (Max) @ Id, Vgs: 320 mOhm @ 5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS (SC-83)
- Package / Case: SC-83
|
Package: SC-83 |
Stock3,360 |
|
MOSFET (Metal Oxide) | 250V | 10A (Tc) | 10V | 5V @ 1mA | 26.5nC @ 10V | 1440pF @ 25V | ±30V | - | 1.56W (Ta), 40W (Tc) | 320 mOhm @ 5A, 10V | 150°C (TJ) | Surface Mount | LPTS (SC-83) | SC-83 |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 45V 8.5A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
- Vgs (Max): 20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.5A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,376 |
|
MOSFET (Metal Oxide) | 45V | 8.5A (Ta) | 4V, 10V | - | 21.4nC @ 5V | 1500pF @ 10V | 20V | - | 2W (Ta) | 18 mOhm @ 8.5A, 10V | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Rohm Semiconductor |
MOSFET P-CH 100V 15A SC83
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.35W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 15A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS (SC-83)
- Package / Case: SC-83
|
Package: SC-83 |
Stock5,744 |
|
MOSFET (Metal Oxide) | 100V | 15A (Tc) | 4V, 10V | 2.5V @ 1mA | 64nC @ 10V | 3800pF @ 25V | ±20V | - | 1.35W (Ta), 50W (Tc) | 120 mOhm @ 15A, 10V | 150°C (TJ) | Surface Mount | LPTS (SC-83) | SC-83 |
|
|
|
Rohm Semiconductor |
MOSFET P-CH 30V 9A MPT6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 16.9 mOhm @ 9A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MPT6
- Package / Case: 6-SMD, Flat Leads
|
Package: 6-SMD, Flat Leads |
Stock5,056 |
|
MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4V, 10V | 2.5V @ 1mA | 30nC @ 5V | 3000pF @ 10V | ±20V | - | 2W (Ta) | 16.9 mOhm @ 9A, 10V | 150°C (TJ) | Surface Mount | MPT6 | 6-SMD, Flat Leads |
|
|
|
Rohm Semiconductor |
MOSFET P-CH 60V 14A CPT3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Rds On (Max) @ Id, Vgs: 84 mOhm @ 14A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: CPT3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,448 |
|
MOSFET (Metal Oxide) | 60V | 14A (Ta) | 4V, 10V | 3V @ 1mA | 27nC @ 10V | 1900pF @ 10V | ±20V | - | 20W (Tc) | 84 mOhm @ 14A, 10V | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 200V 8A LPT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.25V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
- Rds On (Max) @ Id, Vgs: 770 mOhm @ 4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS (SC-83)
- Package / Case: SC-83
|
Package: SC-83 |
Stock4,000 |
|
MOSFET (Metal Oxide) | 200V | 8A (Tc) | 10V | 5.25V @ 1mA | 8.5nC @ 10V | 330pF @ 25V | ±30V | - | 1.56W (Ta), 40W (Tc) | 770 mOhm @ 4A, 10V | 150°C (TJ) | Surface Mount | LPTS (SC-83) | SC-83 |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 100V 20A CPT3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 850mW (Ta), 20W (Tc)
- Rds On (Max) @ Id, Vgs: 46 mOhm @ 20A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: CPT3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,392 |
|
MOSFET (Metal Oxide) | 100V | 20A (Tc) | 4V, 10V | 2.5V @ 1mA | 55nC @ 10V | 2100pF @ 25V | ±20V | - | 850mW (Ta), 20W (Tc) | 46 mOhm @ 20A, 10V | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Rohm Semiconductor |
MOSFET P-CH 30V 5A TSMT8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 31 mOhm @ 5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT8
- Package / Case: 8-SMD, Flat Lead
|
Package: 8-SMD, Flat Lead |
Stock5,840 |
|
MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4V, 10V | 2.5V @ 1mA | 28nC @ 10V | 1300pF @ 10V | ±20V | - | 700mW (Ta) | 31 mOhm @ 5A, 10V | 150°C (TJ) | Surface Mount | TSMT8 | 8-SMD, Flat Lead |
|
|
|
Rohm Semiconductor |
MOSFET P-CH 12V 4A TSST8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 6V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 4A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSST
- Package / Case: 8-SMD, Flat Lead
|
Package: 8-SMD, Flat Lead |
Stock2,384 |
|
MOSFET (Metal Oxide) | 12V | 4A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 30nC @ 4.5V | 2350pF @ 6V | ±10V | - | 1.25W (Ta) | 30 mOhm @ 4A, 4.5V | 150°C (TJ) | Surface Mount | 8-TSST | 8-SMD, Flat Lead |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 30V 24A 8-HSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 27.4W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 24A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock4,736 |
|
MOSFET (Metal Oxide) | 30V | 24A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 23nC @ 10V | 1500pF @ 15V | ±20V | - | 3W (Ta), 27.4W (Tc) | 3.3 mOhm @ 24A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
|
|
|
Rohm Semiconductor |
MOSFET P-CH 20V 2A TUMT3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 2A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TUMT3
- Package / Case: 3-SMD, Flat Leads
|
Package: 3-SMD, Flat Leads |
Stock1,017,432 |
|
MOSFET (Metal Oxide) | 20V | 2A (Ta) | 2.5V, 4.5V | 2V @ 1mA | 7nC @ 4.5V | 640pF @ 10V | ±12V | - | 800mW (Ta) | 85 mOhm @ 2A, 4.5V | 150°C (TJ) | Surface Mount | TUMT3 | 3-SMD, Flat Leads |
|
|
|
Rohm Semiconductor |
MOSFET P-CH 20V 3A TUMT6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 3A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TUMT6
- Package / Case: 6-SMD, Flat Leads
|
Package: 6-SMD, Flat Leads |
Stock240,780 |
|
MOSFET (Metal Oxide) | 20V | 3A (Ta) | 2.5V, 4.5V | 2V @ 1mA | 8nC @ 4.5V | 760pF @ 10V | ±12V | - | 1W (Ta) | 70 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | TUMT6 | 6-SMD, Flat Leads |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 30V 2A TSMT5
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 10V
- Vgs (Max): ±12V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT5
- Package / Case: SOT-23-5 Thin, TSOT-23-5
|
Package: SOT-23-5 Thin, TSOT-23-5 |
Stock28,500 |
|
MOSFET (Metal Oxide) | 30V | 2A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 3.9nC @ 4.5V | 175pF @ 10V | ±12V | Schottky Diode (Isolated) | 1.25W (Ta) | 100 mOhm @ 2A, 4.5V | 150°C (TJ) | Surface Mount | TSMT5 | SOT-23-5 Thin, TSOT-23-5 |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 250V 4A CPT3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 850mW (Ta), 20W (Tc)
- Rds On (Max) @ Id, Vgs: 1300 mOhm @ 2A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: CPT3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,736 |
|
MOSFET (Metal Oxide) | 250V | 4A (Tc) | 10V | 5.5V @ 1mA | 8.5nC @ 10V | 350pF @ 25V | ±30V | - | 850mW (Ta), 20W (Tc) | 1300 mOhm @ 2A, 10V | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Rohm Semiconductor |
MOSFET P-CH 45V 4.5A CPT3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 850mW (Ta), 15W (Tc)
- Rds On (Max) @ Id, Vgs: 155 mOhm @ 4.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: CPT3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock33,444 |
|
MOSFET (Metal Oxide) | 45V | 4.5A (Tc) | 4V, 10V | 3V @ 1mA | 12nC @ 5V | 550pF @ 10V | ±20V | - | 850mW (Ta), 15W (Tc) | 155 mOhm @ 4.5A, 10V | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
0
Login/Register
BOM
Cart
