Page 55 - Fairchild/ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

FCP9N60N_F102
Fairchild/ON Semiconductor

FCP9N60N IN TO220 F102 T/F OPTIO

Package: TO-220-3 Full Pack

Stock6,832
FCPF13N60NT
Fairchild/ON Semiconductor

MOSFET N-CH 600V 13A TO220F

Package: TO-220-3 Full Pack

Stock9,372
FDPF51N25RDTU
Fairchild/ON Semiconductor

UNIFET 250V

Package: TO-220-3 Full Pack

Stock5,680
FDP032N08_F102
Fairchild/ON Semiconductor

PT3 MV 75V 3.2MOHM FOR DELTA

Package: TO-220-3

Stock5,616
IRFS450B
Fairchild/ON Semiconductor

MOSFET N-CH 500V 9.6A TO-3PF

Package: SC-94

Stock9,156
FDB024N08BL7
Fairchild/ON Semiconductor

MOSFET N-CH 80V 120A D2PAK7

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock22,800
FCPF250N65S3L1
Fairchild/ON Semiconductor

SUPERFET3 650V 250 MOHM, TO220F

Package: -

Stock6,400
FDMS2D5N08C
Fairchild/ON Semiconductor

PTNG 80V/20V N-CHANNEL MOSFET

Package: -

Stock6,528
IRFP150A
Fairchild/ON Semiconductor

MOSFET N-CH 100V 43A TO-3

Package: TO-3P-3, SC-65-3

Stock6,912
FDMS86202ET120
Fairchild/ON Semiconductor

MOSFET N-CH 120V POWER56

Package: 8-PowerTDFN

Stock3,712
FDP047N08_F102
Fairchild/ON Semiconductor

PT3 75V

Package: TO-220-3

Stock5,328
FCB199N65S3
Fairchild/ON Semiconductor

SUPERFET3 650V 199MOHM D2PAK PKG

Package: -

Stock5,152
HUF75639G3
Fairchild/ON Semiconductor

MOSFET N-CH 100V 56A TO-247

Package: TO-247-3

Stock498,828
FDP8870
Fairchild/ON Semiconductor

MOSFET N-CH 30V 156A TO-220AB

Package: TO-220-3

Stock167,028
FCP190N65S3
Fairchild/ON Semiconductor

SUPERFET3 650V 190 MOHM, TO220F

Package: -

Stock7,968
FDP047N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 120A TO-220

Package: TO-220-3

Stock267,804
FQB25N33TM_F085
Fairchild/ON Semiconductor

MOSFET N-CH 330V 25A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,624
FCP11N60N_F102
Fairchild/ON Semiconductor

FCP11N60N IN TO220 F102 T/F OPTI

Package: TO-220-3 Full Pack

Stock6,000
FCPF11N60T
Fairchild/ON Semiconductor

MOSFET N-CH 600V 11A TO-220F

Package: TO-220-3 Full Pack

Stock5,472
FDB9406L_F085
Fairchild/ON Semiconductor

N-CHANNEL POWERTRENCH MOSFET

Package: -

Stock4,208

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FCP9N60N_F102	Fairchild/ON Semiconductor	FCP9N60N IN TO220 F102 T/F OPTIO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 83.3W (Tc) Rds On (Max) @ Id, Vgs: 385 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,832	MOSFET (Metal Oxide)	600V	9A (Tc)	10V	4V @ 250µA	29nC @ 10V	1240pF @ 100V	±30V	-	83.3W (Tc)	385 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FCPF13N60NT	Fairchild/ON Semiconductor	MOSFET N-CH 600V 13A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 33.8W (Tc) Rds On (Max) @ Id, Vgs: 258 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 (Y-Forming) Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock9,372	MOSFET (Metal Oxide)	600V	13A (Tc)	10V	4V @ 250µA	39.5nC @ 10V	1765pF @ 100V	±30V	-	33.8W (Tc)	258 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3 (Y-Forming)	TO-220-3 Full Pack
FDPF51N25RDTU	Fairchild/ON Semiconductor	UNIFET 250V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3410pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 25.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,680	MOSFET (Metal Oxide)	250V	51A (Tc)	10V	5V @ 250µA	70nC @ 10V	3410pF @ 25V	±30V	-	38W (Tc)	60 mOhm @ 25.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDP032N08_F102	Fairchild/ON Semiconductor	PT3 MV 75V 3.2MOHM FOR DELTA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15160pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock5,616	MOSFET (Metal Oxide)	75V	120A (Tc)	10V	4.5V @ 250µA	220nC @ 10V	15160pF @ 25V	±20V	-	375W (Tc)	3.2 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
IRFS450B	Fairchild/ON Semiconductor	MOSFET N-CH 500V 9.6A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 390 mOhm @ 4.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock9,156	MOSFET (Metal Oxide)	500V	9.6A (Tc)	10V	4V @ 250µA	113nC @ 10V	3800pF @ 25V	±30V	-	96W (Tc)	390 mOhm @ 4.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	SC-94
FDB024N08BL7	Fairchild/ON Semiconductor	MOSFET N-CH 80V 120A D2PAK7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13530pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 246W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263) Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock22,800	MOSFET (Metal Oxide)	80V	120A (Tc)	10V	4.5V @ 250µA	178nC @ 10V	13530pF @ 40V	±20V	-	246W (Tc)	2.4 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263)	TO-263-7, D2Pak (6 Leads + Tab)
FCPF250N65S3L1	Fairchild/ON Semiconductor	SUPERFET3 650V 250 MOHM, TO220F FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,400	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDMS2D5N08C	Fairchild/ON Semiconductor	PTNG 80V/20V N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,528	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFP150A	Fairchild/ON Semiconductor	MOSFET N-CH 100V 43A TO-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): 193W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 21.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock6,912	MOSFET (Metal Oxide)	100V	43A (Tc)	10V	4V @ 250µA	97nC @ 10V	2270pF @ 25V	-	-	193W (Tc)	40 mOhm @ 21.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
FDMS86202ET120	Fairchild/ON Semiconductor	MOSFET N-CH 120V POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4585pF @ 60V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,712	MOSFET (Metal Oxide)	120V	13.5A (Ta), 102A (Tc)	6V, 10V	4V @ 250µA	64nC @ 10V	4585pF @ 60V	±20V	-	3.3W (Ta), 187W (Tc)	7.2 mOhm @ 13.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDP047N08_F102	Fairchild/ON Semiconductor	PT3 75V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 164A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9415pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 268W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock5,328	MOSFET (Metal Oxide)	75V	164A (Tc)	10V	4.5V @ 250µA	152nC @ 10V	9415pF @ 25V	±20V	-	268W (Tc)	-	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FCB199N65S3	Fairchild/ON Semiconductor	SUPERFET3 650V 199MOHM D2PAK PKG FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,152	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HUF75639G3	Fairchild/ON Semiconductor	MOSFET N-CH 100V 56A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock498,828	MOSFET (Metal Oxide)	100V	56A (Tc)	10V	4V @ 250µA	130nC @ 20V	2000pF @ 25V	±20V	-	200W (Tc)	25 mOhm @ 56A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
FDP8870	Fairchild/ON Semiconductor	MOSFET N-CH 30V 156A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 156A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock167,028	MOSFET (Metal Oxide)	30V	19A (Ta), 156A (Tc)	4.5V, 10V	2.5V @ 250µA	132nC @ 10V	5200pF @ 15V	±20V	-	160W (Tc)	4.1 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FCP190N65S3	Fairchild/ON Semiconductor	SUPERFET3 650V 190 MOHM, TO220F FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,968	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDP047N10	Fairchild/ON Semiconductor	MOSFET N-CH 100V 120A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15265pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock267,804	MOSFET (Metal Oxide)	100V	120A (Tc)	10V	4.5V @ 250µA	210nC @ 10V	15265pF @ 25V	±20V	-	375W (Tc)	4.7 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQB25N33TM_F085	Fairchild/ON Semiconductor	MOSFET N-CH 330V 25A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 330V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,624	MOSFET (Metal Oxide)	330V	25A (Tc)	10V	5V @ 250µA	75nC @ 15V	2010pF @ 25V	±30V	-	3.1W (Ta), 250W (Tc)	230 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FCP11N60N_F102	Fairchild/ON Semiconductor	FCP11N60N IN TO220 F102 T/F OPTI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 5.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,000	MOSFET (Metal Oxide)	600V	10.8A (Tc)	10V	4V @ 250µA	35.6nC @ 10V	1505pF @ 100V	±30V	-	94W (Tc)	299 mOhm @ 5.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FCPF11N60T	Fairchild/ON Semiconductor	MOSFET N-CH 600V 11A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,472	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	5V @ 250µA	52nC @ 10V	1490pF @ 25V	±30V	-	36W (Tc)	380 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDB9406L_F085	Fairchild/ON Semiconductor	N-CHANNEL POWERTRENCH MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,208	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDB8860	Fairchild/ON Semiconductor	MOSFET N-CH 30V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 214nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12585pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 254W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock15,120	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	3V @ 250µA	214nC @ 10V	12585pF @ 15V	±20V	-	254W (Tc)	2.3 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDMS8350LET40	Fairchild/ON Semiconductor	PT8 40V/20V NCH POWERTRENCH MOSF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 219nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 16590pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.33W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 0.85 mOhm @ 47A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,824	MOSFET (Metal Oxide)	40V	49A (Ta), 300A (Tc)	4.5V, 10V	3V @ 250µA	219nC @ 10V	16590pF @ 20V	±20V	-	3.33W (Ta), 125W (Tc)	0.85 mOhm @ 47A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDPF39N20TLDTU	Fairchild/ON Semiconductor	UNIFET 200V LDTU FORM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 66 mOhm @ 19.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,088	MOSFET (Metal Oxide)	200V	39A (Tc)	10V	5V @ 250µA	49nC @ 10V	2130pF @ 25V	±30V	-	37W (Tc)	66 mOhm @ 19.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
NTMFS10N7D2C	Fairchild/ON Semiconductor	PTNG 100/20V NCH POWER TRENCH MO FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,328	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDB9406_F085	Fairchild/ON Semiconductor	MOSFET N-CH 40V 110A TO263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7710pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tj) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,472	MOSFET (Metal Oxide)	40V	110A (Tc)	10V	4V @ 250µA	138nC @ 10V	7710pF @ 25V	±20V	-	176W (Tj)	1.8 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FCPF7N60NT	Fairchild/ON Semiconductor	MOSFET N-CH 600V 6.8A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30.5W (Tc) Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,056	MOSFET (Metal Oxide)	600V	6.8A (Tc)	10V	4V @ 250µA	35.6nC @ 10V	960pF @ 100V	±30V	-	30.5W (Tc)	520 mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FCPF190N65S3L1	Fairchild/ON Semiconductor	SUPERFET3 650V 190 MOHM, TO220F FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,648	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FCP11N60N	Fairchild/ON Semiconductor	MOSFET N-CH 600V 10.8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 5.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock4,416	MOSFET (Metal Oxide)	600V	10.8A (Tc)	10V	4V @ 250µA	35.6nC @ 10V	1505pF @ 100V	±30V	-	94W (Tc)	299 mOhm @ 5.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3