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Microchip Technology |
RH MOSFET 250V U2
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Microchip Technology |
RH MOSFET 200V TO-254AA
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Microchip Technology |
RH MOSFET 200V SMD 2.0
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Microchip Technology |
RH MOSFET _ U3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Rds On (Max) @ Id, Vgs: 210mOhm @ 7.8A, 12V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U3 (SMD-0.5)
- Package / Case: 3-SMD, No Lead
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Package: - |
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MOSFET (Metal Oxide) | 250 V | 12.4A (Tc) | 12V | 4V @ 1mA | 50 nC @ 12 V | - | ±20V | - | 75W (Tc) | 210mOhm @ 7.8A, 12V | -55°C ~ 150°C (TJ) | Surface Mount | U3 (SMD-0.5) | 3-SMD, No Lead |
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Microchip Technology |
RH MOSFET _ U3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 16A
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: U3 (SMD-0.5)
- Package / Case: 3-SMD, No Lead
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Package: - |
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MOSFET (Metal Oxide) | 200 V | 16A | - | - | - | - | - | - | - | - | - | Surface Mount | U3 (SMD-0.5) | 3-SMD, No Lead |
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Microchip Technology |
SICFET N-CH 1200V 66A TO247-4
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.6V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
- Vgs (Max): +23V, -10V
- FET Feature: -
- Power Dissipation (Max): 323W (Tc)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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Package: - |
Stock261 |
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SiCFET (Silicon Carbide) | 1200 V | 66A (Tc) | 20V | 2.6V @ 2mA | 137 nC @ 20 V | 1990 pF @ 1000 V | +23V, -10V | - | 323W (Tc) | 50mOhm @ 40A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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Microchip Technology |
MOSFET N-CH 600V 17A D3PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 380mOhm @ 8.5A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: D3PAK
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Package: - |
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MOSFET (Metal Oxide) | 600 V | 17A (Tc) | - | 5V @ 1mA | 43 nC @ 10 V | 1850 pF @ 25 V | - | - | - | 380mOhm @ 8.5A, 10V | - | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Microchip Technology |
MOSFET N-CH 600V 77A D3PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.6V @ 2.96mA
- Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 481W (Tc)
- Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D3PAK
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Stock771 |
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MOSFET (Metal Oxide) | 600 V | 77A (Tc) | 10V | 3.6V @ 2.96mA | 260 nC @ 10 V | 13600 pF @ 25 V | ±20V | - | 481W (Tc) | 41mOhm @ 44.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Microchip Technology |
MOSFET SIC 3300 V 25 MOHM TO-247
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 3300 V
- Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.7V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs: 410 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 8720 pF @ 2640 V
- Vgs (Max): +23V, -10V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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Package: - |
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SiCFET (Silicon Carbide) | 3300 V | 104A (Tc) | 20V | 2.7V @ 7mA | 410 nC @ 20 V | 8720 pF @ 2640 V | +23V, -10V | - | - | 31mOhm @ 40A, 20V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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Microchip Technology |
MOSFET N-CH 1200V 9A D3PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: D3PAK
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Package: - |
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MOSFET (Metal Oxide) | 1200 V | 9A (Tc) | - | 5V @ 1mA | 120 nC @ 10 V | 2500 pF @ 25 V | - | - | - | 1.4Ohm @ 4.5A, 10V | - | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Microchip Technology |
MOSFET N-CH 600V 43A T-MAX
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 130mOhm @ 21.5A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX™ [B2]
- Package / Case: TO-247-3 Variant
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Package: - |
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MOSFET (Metal Oxide) | 600 V | 43A (Tc) | - | 5V @ 2.5mA | 130 nC @ 10 V | 5630 pF @ 25 V | - | - | - | 130mOhm @ 21.5A, 10V | - | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microchip Technology |
MOSFET N-CH 500V 30A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 [B]
- Package / Case: TO-247-3
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Package: - |
Stock150 |
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MOSFET (Metal Oxide) | 500 V | 30A (Tc) | - | 4V @ 1mA | 300 nC @ 10 V | 5280 pF @ 25 V | - | - | - | 170mOhm @ 500mA, 10V | - | Through Hole | TO-247 [B] | TO-247-3 |
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Microchip Technology |
MOSFET N-CH 1200V 26A SOT227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 1200 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 700W (Tc)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227 (ISOTOP®)
- Package / Case: SOT-227-4, miniBLOC
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Package: - |
Stock39 |
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MOSFET (Metal Oxide) | 1200 V | 26A (Tc) | 10V | 4V @ 5mA | 1200 nC @ 10 V | 18000 pF @ 25 V | ±30V | - | 700W (Tc) | 400mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 (ISOTOP®) | SOT-227-4, miniBLOC |
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Microchip Technology |
RH MOSFET 250V TO-254AA
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Microchip Technology |
MOSFET N-CH 600V 25A D3PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: D3PAK
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 25A (Tc) | - | 4V @ 1mA | 275 nC @ 10 V | 5160 pF @ 25 V | - | - | - | 250mOhm @ 500mA, 10V | - | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Microchip Technology |
TRANS SJT N-CH 700V 77A TO247-4
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.7V @ 2mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
- Vgs (Max): +23V, -10V
- FET Feature: -
- Power Dissipation (Max): 283W (Tc)
- Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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Package: - |
Request a Quote |
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SiCFET (Silicon Carbide) | 700 V | 77A (Tc) | 20V | 2.7V @ 2mA (Typ) | 99 nC @ 20 V | 2010 pF @ 700 V | +23V, -10V | - | 283W (Tc) | 44mOhm @ 30A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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Microchip Technology |
SICFET N-CH 1200V 37A TO247-3
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
- Vgs (Max): +23V, -10V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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SiCFET (Silicon Carbide) | 1200 V | 37A (Tc) | 20V | 2.8V @ 1mA | 64 nC @ 20 V | 838 pF @ 1000 V | +23V, -10V | - | 200W (Tc) | 100mOhm @ 15A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Microchip Technology |
SICFET N-CH 1.2KV 35A SOT227
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227 (ISOTOP®)
- Package / Case: SOT-227-4, miniBLOC
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Package: - |
Stock75 |
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SiCFET (Silicon Carbide) | 1200 V | 37A (Tc) | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 (ISOTOP®) | SOT-227-4, miniBLOC |
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Microchip Technology |
SICFET N-CH 1200V 35A D3PAK
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 35A
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
- Vgs (Max): +23V, -10V
- FET Feature: -
- Power Dissipation (Max): 182W (Tc)
- Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D3PAK
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Package: - |
Stock105 |
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SiCFET (Silicon Carbide) | 1200 V | 35A | 20V | 2.8V @ 1mA | 64 nC @ 20 V | 838 pF @ 1000 V | +23V, -10V | - | 182W (Tc) | 100mOhm @ 15A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Microchip Technology |
MOSFET N-CH 500V 51A ISOTOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP®
- Package / Case: SOT-227-4, miniBLOC
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 500 V | 51A (Tc) | - | 5V @ 2.5mA | 125 nC @ 10 V | 5590 pF @ 25 V | - | - | - | 75mOhm @ 25.5A, 10V | - | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microchip Technology |
MOSFET N-CH 500V 77A ISOTOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 1000 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 19600 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP®
- Package / Case: SOT-227-4, miniBLOC
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Package: - |
Stock24 |
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MOSFET (Metal Oxide) | 500 V | 77A (Tc) | - | 4V @ 5mA | 1000 nC @ 10 V | 19600 pF @ 25 V | - | - | - | 50mOhm @ 500mA, 10V | - | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microchip Technology |
MOSFET N-CH 600V 29A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 210mOhm @ 14.5A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 [B]
- Package / Case: TO-247-3
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Package: - |
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MOSFET (Metal Oxide) | 600 V | 29A (Tc) | - | 5V @ 1mA | 80 nC @ 10 V | 3470 pF @ 25 V | - | - | - | 210mOhm @ 14.5A, 10V | - | Through Hole | TO-247 [B] | TO-247-3 |
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Microchip Technology |
MOSFET N-CH 1200V 20A TO264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 600mOhm @ 10A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 [L]
- Package / Case: TO-264-3, TO-264AA
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Package: - |
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MOSFET (Metal Oxide) | 1200 V | 20A (Tc) | - | 4V @ 1mA | 650 nC @ 10 V | 9500 pF @ 25 V | - | - | - | 600mOhm @ 10A, 10V | - | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microchip Technology |
MOSFET N-CH 500V 41A ISOTOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 100mOhm @ 20.5A, 10V
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP®
- Package / Case: SOT-227-4, miniBLOC
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Package: - |
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MOSFET (Metal Oxide) | 500 V | 41A (Tc) | - | 5V @ 2.5mA | 95 nC @ 10 V | 4360 pF @ 25 V | - | - | - | 100mOhm @ 20.5A, 10V | - | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microchip Technology |
MOSFET N-CH 500V 44A ISOTOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP®
- Package / Case: SOT-227-4, miniBLOC
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Package: - |
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MOSFET (Metal Oxide) | 500 V | 44A (Tc) | - | 4V @ 2.5mA | 470 nC @ 10 V | 8900 pF @ 25 V | - | - | - | 100mOhm @ 500mA, 10V | - | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microchip Technology |
MOSFET N-CH 500V 41A ISOTOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 100mOhm @ 20.5A, 10V
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP®
- Package / Case: SOT-227-4, miniBLOC
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Package: - |
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MOSFET (Metal Oxide) | 500 V | 41A (Tc) | - | 5V @ 2.5mA | 95 nC @ 10 V | 4360 pF @ 25 V | - | - | - | 100mOhm @ 20.5A, 10V | - | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microchip Technology |
MOSFET N-CH 500V 44A ISOTOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 470 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP®
- Package / Case: SOT-227-4, miniBLOC
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Package: - |
Stock63 |
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MOSFET (Metal Oxide) | 500 V | 44A (Tc) | - | 4V @ 2.5mA | 470 nC @ 10 V | 8900 pF @ 25 V | - | - | - | 100mOhm @ 500mA, 10V | - | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microchip Technology |
MOSFET SIC 1200 V 360 MOHM TO-26
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 3.14V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V
- Vgs (Max): +23V, -10V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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SiCFET (Silicon Carbide) | 1200 V | 11A (Tc) | 20V | 3.14V @ 250µA | 21 nC @ 20 V | 255 pF @ 1000 V | +23V, -10V | - | 71W (Tc) | 450mOhm @ 5A, 20V | -55°C ~ 175°C (TJ) | - | - | - |
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