Page 10 - Microsemi Corporation Products - Transistors - Bipolar (BJT) - RF

MRF553
Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

Package: -

Stock6,224
MRF4427R2
Microsemi Corporation

TRANS NPN 20V 400MA SO8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,472
MRF4427R1
Microsemi Corporation

TRANS NPN 20V 400MA SO8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,488
MRF4427GR2
Microsemi Corporation

RF NPN TRANSISTOR

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,672
MRF4427GR1
Microsemi Corporation

RF NPN TRANSISTOR

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,368
MRF4427G
Microsemi Corporation

RF NPN TRANSISTOR

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,976
MRF4427
Microsemi Corporation

TRANS NPN 20V 400MA SO8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,760
JANTXV2N4957UB
Microsemi Corporation

TRANS PNP 30V 30MA

Package: 3-SMD, No Lead

Stock7,360
JANTXV2N4957
Microsemi Corporation

TRANS PNP 30V 30MA TO72

Package: TO-72-3 Metal Can

Stock3,536
JAN2N4957
Microsemi Corporation

TRANS PNP 30V 30MA TO72

Package: TO-72-3 Metal Can

Stock2,592
2N4957
Microsemi Corporation

TRANS PNP 30V 30MA TO72

Package: TO-72-3 Metal Can

Stock11,436
JANTX2N2857UB
Microsemi Corporation

TRANS NPN 15V 0.04A

Package: 3-SMD, No Lead

Stock6,368
2N2857UB
Microsemi Corporation

TRANS NPN 15V 0.04A

Package: 3-SMD, No Lead

Stock3,936
JANTXV2N2857
Microsemi Corporation

TRANS NPN 15V 0.04A TO-72

Package: TO-72-3 Metal Can

Stock3,856
JAN2N2857
Microsemi Corporation

TRANS NPN 15V 0.04A TO-72

Package: TO-72-3 Metal Can

Stock5,568
MS2203
Microsemi Corporation

TRANS RF BIPO 5W 300MA M220

Package: M220

Stock6,336
MS2204
Microsemi Corporation

TRANS RF BIPO 600MW 300MA M115

Package: M115

Stock2,432
MS2206
Microsemi Corporation

TRANS RF BIPO 7.5W 1A M115

Package: M115

Stock4,496
MRF517
Microsemi Corporation

TRANS RF BIPO 2.5W 150MA TO39

Package: TO-205AD, TO-39-3 Metal Can

Stock7,680
BFY90
Microsemi Corporation

TRANS RF NPN 200MW 50MA TO72

Package: TO-206AF, TO-72-4 Metal Can

Stock2,912

Part Number	Manufacturer	Description	Package	Stock	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MRF553	Microsemi Corporation	TRANS NPN 16V 500MA POWERMACRO Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 11.5dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V Current - Collector (Ic) (Max): 500mA Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Stock6,224	16V	175MHz	-	11.5dB	3W	30 @ 250mA, 5V	500mA	-	-	-	-
MRF4427R2	Microsemi Corporation	TRANS NPN 20V 400MA SO8 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 20dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,472	20V	-	-	20dB	1.5W	10 @ 10mA, 5V	400mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MRF4427R1	Microsemi Corporation	TRANS NPN 20V 400MA SO8 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 20dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-dBGA (2x1.5)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,488	20V	-	-	20dB	1.5W	10 @ 10mA, 5V	400mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-dBGA (2x1.5)
MRF4427GR2	Microsemi Corporation	RF NPN TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 20dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,672	20V	-	-	20dB	1.5W	10 @ 10mA, 5V	400mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MRF4427GR1	Microsemi Corporation	RF NPN TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 20dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,368	20V	-	-	20dB	1.5W	10 @ 10mA, 5V	400mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MRF4427G	Microsemi Corporation	RF NPN TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 20dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,976	20V	-	-	20dB	1.5W	10 @ 10mA, 5V	400mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MRF4427	Microsemi Corporation	TRANS NPN 20V 400MA SO8 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 20dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,760	20V	-	-	20dB	1.5W	10 @ 10mA, 5V	400mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
JANTXV2N4957UB	Microsemi Corporation	TRANS PNP 30V 30MA Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: - Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	Package: 3-SMD, No Lead	Stock7,360	30V	-	3.5dB @ 450MHz	25dB	200mW	30 @ 5mA, 10V	30mA	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
JANTXV2N4957	Microsemi Corporation	TRANS PNP 30V 30MA TO72 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: - Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	Package: TO-72-3 Metal Can	Stock3,536	30V	-	3.5dB @ 450MHz	25dB	200mW	30 @ 5mA, 10V	30mA	-65°C ~ 200°C (TJ)	Through Hole	TO-72-3 Metal Can	TO-72
JAN2N4957	Microsemi Corporation	TRANS PNP 30V 30MA TO72 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: - Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	Package: TO-72-3 Metal Can	Stock2,592	30V	-	3.5dB @ 450MHz	25dB	200mW	30 @ 5mA, 10V	30mA	-65°C ~ 200°C (TJ)	Through Hole	TO-72-3 Metal Can	TO-72
2N4957	Microsemi Corporation	TRANS PNP 30V 30MA TO72 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: - Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	Package: TO-72-3 Metal Can	Stock11,436	30V	-	3.5dB @ 450MHz	25dB	200mW	30 @ 5mA, 10V	30mA	-65°C ~ 200°C (TJ)	Through Hole	TO-72-3 Metal Can	TO-72
JANTX2N2857UB	Microsemi Corporation	TRANS NPN 15V 0.04A Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 21dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	Package: 3-SMD, No Lead	Stock6,368	15V	-	4.5dB @ 450MHz	21dB	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
2N2857UB	Microsemi Corporation	TRANS NPN 15V 0.04A Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 21dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	Package: 3-SMD, No Lead	Stock3,936	15V	-	4.5dB @ 450MHz	21dB	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
JANTXV2N2857	Microsemi Corporation	TRANS NPN 15V 0.04A TO-72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 12.5dB ~ 21dB @ 450MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	Package: TO-72-3 Metal Can	Stock3,856	15V	500MHz	4.5dB @ 450MHz	12.5dB ~ 21dB @ 450MHz	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Through Hole	TO-72-3 Metal Can	TO-72
JAN2N2857	Microsemi Corporation	TRANS NPN 15V 0.04A TO-72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 12.5dB ~ 21dB @ 450MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	Package: TO-72-3 Metal Can	Stock5,568	15V	500MHz	4.5dB @ 450MHz	12.5dB ~ 21dB @ 450MHz	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Through Hole	TO-72-3 Metal Can	TO-72
MS2203	Microsemi Corporation	TRANS RF BIPO 5W 300MA M220 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.09GHz Noise Figure (dB Typ @ f): - Gain: 10.8dB ~ 12.3dB Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M220 Supplier Device Package: M220	Package: M220	Stock6,336	20V	1.09GHz	-	10.8dB ~ 12.3dB	5W	120 @ 100mA, 5V	300mA	200°C (TJ)	Chassis Mount	M220	M220
MS2204	Microsemi Corporation	TRANS RF BIPO 600MW 300MA M115 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.09GHz Noise Figure (dB Typ @ f): - Gain: 10.8dB Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	Package: M115	Stock2,432	20V	1.09GHz	-	10.8dB	600mW	15 @ 100mA, 5V	300mA	200°C (TJ)	Chassis Mount	M115	M115
MS2206	Microsemi Corporation	TRANS RF BIPO 7.5W 1A M115 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 7.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	Package: M115	Stock4,496	20V	1.025GHz ~ 1.15GHz	-	10dB	7.5W	20 @ 100mA, 5V	1A	200°C (TJ)	Chassis Mount	M115	M115
MRF517	Microsemi Corporation	TRANS RF BIPO 2.5W 150MA TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 4GHz Noise Figure (dB Typ @ f): - Gain: 9dB ~ 10dB Power - Max: 2.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 60mA, 10V Current - Collector (Ic) (Max): 150mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	Package: TO-205AD, TO-39-3 Metal Can	Stock7,680	20V	4GHz	-	9dB ~ 10dB	2.5W	50 @ 60mA, 10V	150mA	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
BFY90	Microsemi Corporation	TRANS RF NPN 200MW 50MA TO72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.3GHz Noise Figure (dB Typ @ f): 2.5dB ~ 5dB @ 500MHz Gain: 20dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 25mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	Package: TO-206AF, TO-72-4 Metal Can	Stock2,912	15V	1.3GHz	2.5dB ~ 5dB @ 500MHz	20dB	200mW	20 @ 25mA, 1V	50mA	-	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
MS1202	Microsemi Corporation	TRANS RF BIPO 15W 1A M135 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: 118MHz ~ 136MHz Noise Figure (dB Typ @ f): - Gain: 8.4dB Power - Max: 15W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M135 Supplier Device Package: M135	Package: M135	Stock3,120	35V	118MHz ~ 136MHz	-	8.4dB	15W	5 @ 100mA, 5V	1A	200°C (TJ)	Chassis Mount	M135	M135
MS2228	Microsemi Corporation	TRANS RF BIPO 175W 5.4A M214 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 175W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 5.4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M214 Supplier Device Package: M214	Package: M214	Stock5,888	65V	1.03GHz ~ 1.09GHz	-	9dB	175W	10 @ 1A, 5V	5.4A	200°C (TJ)	Chassis Mount	M214	M214
MS1007	Microsemi Corporation	TRANS RF BIPO 233W 10A M174 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 14dB Power - Max: 233W DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 1.4A, 6V Current - Collector (Ic) (Max): 10A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M174 Supplier Device Package: M174	Package: M174	Stock5,328	55V	30MHz	-	14dB	233W	18 @ 1.4A, 6V	10A	200°C (TJ)	Chassis Mount	M174	M174
MS2393	Microsemi Corporation	TRANS RF BIPO 87.5W 11A M138 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 8.2dB Power - Max: 583W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 300mA, 5V Current - Collector (Ic) (Max): 11A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M138 Supplier Device Package: M138	Package: M138	Stock3,104	65V	1.025GHz ~ 1.15GHz	-	8.2dB	583W	5 @ 300mA, 5V	11A	200°C (TJ)	Chassis Mount	M138	M138
MS2361	Microsemi Corporation	TRANS RF BIPO 87.5W 2.6A M115 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 87.5W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 2.6A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	Package: M115	Stock6,368	65V	1.025GHz ~ 1.15GHz	-	9dB	87.5W	-	2.6A	200°C (TJ)	Chassis Mount	M115	M115
MS2341	Microsemi Corporation	TRANS RF BIPO 87.5W 2.6A M115 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 87.5W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 2.6A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	Package: M115	Stock4,272	65V	1.025GHz ~ 1.15GHz	-	9dB	87.5W	-	2.6A	200°C (TJ)	Chassis Mount	M115	M115
0105-50	Microsemi Corporation	TRANS RF BIPO 140W 500MHZ 55JT2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 100MHz ~ 500MHz Noise Figure (dB Typ @ f): - Gain: 8.5dB ~ 10dB Power - Max: 140W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 7A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55JT Supplier Device Package: 55JT	Package: 55JT	Stock6,528	65V	100MHz ~ 500MHz	-	8.5dB ~ 10dB	140W	10 @ 1A, 5V	7A	200°C (TJ)	Chassis Mount	55JT	55JT
2307	Microsemi Corporation	TRANS BIPO 20V 7W 55BT Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 42V Frequency - Transition: 2.3GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 20.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55BT Supplier Device Package: 55BT	Package: 55BT	Stock360,000	42V	2.3GHz	-	8dB	20.5W	10 @ 500mA, 5V	1A	200°C (TJ)	Chassis Mount	55BT	55BT