Page 9 - Microsemi Corporation Products - Transistors - Bipolar (BJT) - RF

2003
Microsemi Corporation

TRANS HBT RF BIPOLAR 55BT

Package: 55BT-1

Stock3,024
MS2322
Microsemi Corporation

TRANS RF BIPO 87.5W 1.5A M115

Package: M115

Stock2,016
MS2321
Microsemi Corporation

TRANS RF BIPO 87.5W 1.5A M104

Package: M105

Stock2,768
MS2272
Microsemi Corporation

TRANS RF BIPO 940W 24A M216

Package: M216

Stock3,920
MS2215
Microsemi Corporation

TRANS RF BIPO 300W 16.5A M216

Package: M216

Stock3,728
MS2214
Microsemi Corporation

TRANS BIPO NPN 300W 8A M218

Package: M218

Stock5,360
MS2213
Microsemi Corporation

TRANS RF BIPO 75W 3.5A M214

Package: M214

Stock4,544
MS2212
Microsemi Corporation

TRANS RF BIPO 50W 1.8A M222

Package: M222

Stock4,640
MS2211
Microsemi Corporation

TRANS RF BIPO 25W 900MA M222

Package: M222

Stock14,544
MS2205
Microsemi Corporation

TRANS RF BIPO 21.9W 1A M220

Package: M105

Stock5,584
MS2202
Microsemi Corporation

TRANS BIPO NPN M115

Package: M115

Stock7,248
2N5109
Microsemi Corporation

TRANS RF NPN 2.5W 400MA TO39

Package: TO-205AD, TO-39-3 Metal Can

Stock19,092
2N5031
Microsemi Corporation

TRANS RF NPN 200MW 20MA TO72

Package: TO-206AF, TO-72-4 Metal Can

Stock15,096
2N4427
Microsemi Corporation

TRANS RF NPN 1W 400MA TO39

Package: TO-205AD, TO-39-3 Metal Can

Stock61,800
2N3866A
Microsemi Corporation

TRANS RF NPN 1W 400MA TO39

Package: TO-205AD, TO-39-3 Metal Can

Stock15,828
SD1013
Microsemi Corporation

TRANS RF BIPO 13W 1A M135

Package: M135

Stock5,328
SD1536-03
Microsemi Corporation

TRANS RF BIPO 292W 10A M115

Package: M115

Stock7,040
SD1013-03
Microsemi Corporation

TRANS RF BIPO 13W 1A M113

Package: M113

Stock6,240
UTV200
Microsemi Corporation

TRANS RF BIPO 80W 4.5A 55JV2

Package: 55JV

Stock7,616
MS2201
Microsemi Corporation

TRANS RF BIPO 10W 250MA M220

Package: M220

Stock16,476

Part Number	Manufacturer	Description	Package	Stock	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2003	Microsemi Corporation	TRANS HBT RF BIPOLAR 55BT Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): - Gain: 8.5dB Power - Max: 12W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Current - Collector (Ic) (Max): 500mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55BT-1 Supplier Device Package: 55BT-1	Package: 55BT-1	Stock3,024	50V	2GHz	-	8.5dB	12W	10 @ 100mA, 5V	500mA	200°C (TJ)	Chassis Mount	55BT-1	55BT-1
MS2322	Microsemi Corporation	TRANS RF BIPO 87.5W 1.5A M115 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 87.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Current - Collector (Ic) (Max): 1.5A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	Package: M115	Stock2,016	65V	1.025GHz ~ 1.15GHz	-	10dB	87.5W	10 @ 100mA, 5V	1.5A	-	Chassis Mount	M115	M115
MS2321	Microsemi Corporation	TRANS RF BIPO 87.5W 1.5A M104 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 87.5W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 1.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M105 Supplier Device Package: M105	Package: M105	Stock2,768	65V	1.025GHz ~ 1.15GHz	-	10dB	87.5W	-	1.5A	200°C (TJ)	Chassis Mount	M105	M105
MS2272	Microsemi Corporation	TRANS RF BIPO 940W 24A M216 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7.6dB Power - Max: 940W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 24A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	Package: M216	Stock3,920	65V	960MHz ~ 1.215GHz	-	7.6dB	940W	10 @ 5A, 5V	24A	200°C (TJ)	Chassis Mount	M216	M216
MS2215	Microsemi Corporation	TRANS RF BIPO 300W 16.5A M216 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7.5dB Power - Max: 300W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Current - Collector (Ic) (Max): 16.5A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	Package: M216	Stock3,728	55V	960MHz ~ 1.215GHz	-	7.5dB	300W	20 @ 5A, 5V	16.5A	250°C (TJ)	Chassis Mount	M216	M216
MS2214	Microsemi Corporation	TRANS BIPO NPN 300W 8A M218 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7.5dB Power - Max: 300W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	Package: M218	Stock5,360	55V	960MHz ~ 1.215GHz	-	7.5dB	300W	20 @ 2A, 5V	8A	250°C (TJ)	Chassis Mount	M218	M218
MS2213	Microsemi Corporation	TRANS RF BIPO 75W 3.5A M214 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7.8dB Power - Max: 75W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 3.5A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M214 Supplier Device Package: M214	Package: M214	Stock4,544	55V	960MHz ~ 1.215GHz	-	7.8dB	75W	15 @ 1A, 5V	3.5A	250°C (TJ)	Chassis Mount	M214	M214
MS2212	Microsemi Corporation	TRANS RF BIPO 50W 1.8A M222 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 8.1dB ~ 8.9dB Power - Max: 50W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V Current - Collector (Ic) (Max): 1.8A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M222 Supplier Device Package: M222	Package: M222	Stock4,640	55V	960MHz ~ 1.215GHz	-	8.1dB ~ 8.9dB	50W	15 @ 500mA, 5V	1.8A	250°C (TJ)	Chassis Mount	M222	M222
MS2211	Microsemi Corporation	TRANS RF BIPO 25W 900MA M222 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 48V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 9.3dB Power - Max: 25W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V Current - Collector (Ic) (Max): 900mA Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M222 Supplier Device Package: M222	Package: M222	Stock14,544	48V	960MHz ~ 1.215GHz	-	9.3dB	25W	30 @ 250mA, 5V	900mA	250°C (TJ)	Chassis Mount	M222	M222
MS2205	Microsemi Corporation	TRANS RF BIPO 21.9W 1A M220 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 45V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 9.5dB Power - Max: 21.9W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M105 Supplier Device Package: M105	Package: M105	Stock5,584	45V	1.025GHz ~ 1.15GHz	-	9.5dB	21.9W	10 @ 100mA, 5V	1A	200°C (TJ)	Chassis Mount	M105	M105
MS2202	Microsemi Corporation	TRANS BIPO NPN M115 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.5V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 10W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 5V Current - Collector (Ic) (Max): 250mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	Package: M115	Stock7,248	3.5V	1.025GHz ~ 1.15GHz	-	9dB	10W	30 @ 100mA, 5V	250mA	200°C (TJ)	Chassis Mount	M115	M115
2N5109	Microsemi Corporation	TRANS RF NPN 2.5W 400MA TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.2GHz Noise Figure (dB Typ @ f): - Gain: 12dB Power - Max: 2.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	Package: TO-205AD, TO-39-3 Metal Can	Stock19,092	20V	1.2GHz	-	12dB	2.5W	40 @ 50mA, 15V	400mA	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
2N5031	Microsemi Corporation	TRANS RF NPN 200MW 20MA TO72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 400MHz Noise Figure (dB Typ @ f): - Gain: 12dB @ 400MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	Package: TO-206AF, TO-72-4 Metal Can	Stock15,096	10V	400MHz	-	12dB @ 400MHz	200mW	25 @ 1mA, 6V	20mA	-	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
2N4427	Microsemi Corporation	TRANS RF NPN 1W 400MA TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): - Gain: 10dB @ 175MHz Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	Package: TO-205AD, TO-39-3 Metal Can	Stock61,800	40V	500MHz	-	10dB @ 175MHz	1W	10 @ 100mA, 5V	400mA	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
2N3866A	Microsemi Corporation	TRANS RF NPN 1W 400MA TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 400MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	Package: TO-205AD, TO-39-3 Metal Can	Stock15,828	30V	400MHz	-	-	1W	25 @ 50mA, 5V	400mA	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
SD1013	Microsemi Corporation	TRANS RF BIPO 13W 1A M135 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: 150MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 13W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M135 Supplier Device Package: M135	Package: M135	Stock5,328	35V	150MHz	-	10dB	13W	10 @ 200mA, 5V	1A	200°C (TJ)	Chassis Mount	M135	M135
SD1536-03	Microsemi Corporation	TRANS RF BIPO 292W 10A M115 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 8.4dB Power - Max: 292W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 100mA, 5V Current - Collector (Ic) (Max): 10A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	Package: M115	Stock7,040	65V	1.025GHz ~ 1.15GHz	-	8.4dB	292W	5 @ 100mA, 5V	10A	200°C (TJ)	Chassis Mount	M115	M115
SD1013-03	Microsemi Corporation	TRANS RF BIPO 13W 1A M113 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: 150MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 13W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M113 Supplier Device Package: M113	Package: M113	Stock6,240	35V	150MHz	-	10dB	13W	10 @ 200mA, 5V	1A	200°C (TJ)	Chassis Mount	M113	M113
UTV200	Microsemi Corporation	TRANS RF BIPO 80W 4.5A 55JV2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 28V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 8.5dB ~ 9.5dB Power - Max: 80W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 4.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55JV Supplier Device Package: 55JV	Package: 55JV	Stock7,616	28V	470MHz ~ 860MHz	-	8.5dB ~ 9.5dB	80W	10 @ 1A, 5V	4.5A	200°C (TJ)	Chassis Mount	55JV	55JV
MS2201	Microsemi Corporation	TRANS RF BIPO 10W 250MA M220 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 45V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 10W DC Current Gain (hFE) (Min) @ Ic, Vce: 0.95 @ 10mA, 5V Current - Collector (Ic) (Max): 250mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M220 Supplier Device Package: M220	Package: M220	Stock16,476	45V	1.025GHz ~ 1.15GHz	-	9dB	10W	0.95 @ 10mA, 5V	250mA	200°C (TJ)	Chassis Mount	M220	M220
MS1579	Microsemi Corporation	TRANS RF BIPO 65W 5.2A M156 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 8.5dB Power - Max: 65W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 20V Current - Collector (Ic) (Max): 5.2A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M156 Supplier Device Package: M156	Package: M156	Stock3,360	25V	470MHz ~ 860MHz	-	8.5dB	65W	10 @ 500mA, 20V	5.2A	200°C (TJ)	Chassis Mount	M156	M156
MS1406	Microsemi Corporation	TRANS RF BIPO 30W 3A M135 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 8.2dB Power - Max: 30W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Current - Collector (Ic) (Max): 3A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: M135 Supplier Device Package: M135	Package: M135	Stock7,120	35V	175MHz	-	8.2dB	30W	10 @ 200mA, 5V	3A	200°C (TJ)	Chassis, Stud Mount	M135	M135
MS1337	Microsemi Corporation	TRANS RF BIPO 70W 8A M113 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M113 Supplier Device Package: M113	Package: M113	Stock3,568	18V	175MHz	-	10dB	70W	20 @ 250mA, 5V	8A	200°C (TJ)	Chassis Mount	M113	M113
2N2857	Microsemi Corporation	TRANS RF BIPO NPN 15V 40MA TO72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 12.5dB ~ 21dB @ 450MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	Package: TO-206AF, TO-72-4 Metal Can	Stock20,976	15V	500MHz	4.5dB @ 450MHz	12.5dB ~ 21dB @ 450MHz	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
2225-4L	Microsemi Corporation	TRANS RF BIPO 10W 600MA 55LV1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 2.2GHz ~ 2.5GHz Noise Figure (dB Typ @ f): - Gain: 8.5dB Power - Max: 10W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V Current - Collector (Ic) (Max): 600mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55LV Supplier Device Package: 55LV	Package: 55LV	Stock3,712	40V	2.2GHz ~ 2.5GHz	-	8.5dB	10W	20 @ 200mA, 5V	600mA	200°C (TJ)	Chassis Mount	55LV	55LV
UMIL25	Microsemi Corporation	TRANS RF BIPO 70W 3A 55HV2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 33V Frequency - Transition: 225MHz ~ 400MHz Noise Figure (dB Typ @ f): - Gain: 8.9db ~ 10dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 3A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55HV Supplier Device Package: 55HV	Package: 55HV	Stock6,064	33V	225MHz ~ 400MHz	-	8.9db ~ 10dB	70W	10 @ 500mA, 5V	3A	200°C (TJ)	Chassis Mount	55HV	55HV
UTV020	Microsemi Corporation	TRANS RF BIPO 17W 1.2A 55FT-6 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 12dB Power - Max: 17W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 250mA, 5V Current - Collector (Ic) (Max): 1.2A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	Package: 55FT	Stock3,360	25V	470MHz ~ 860MHz	-	12dB	17W	10 @ 250mA, 5V	1.2A	200°C (TJ)	Chassis, Stud Mount	55FT	55FT
UTV010	Microsemi Corporation	TRANS RF BIPO 15W 1.25A 55FT-5 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 24V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 11.5dB Power - Max: 15W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V Current - Collector (Ic) (Max): 1.25A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	Package: 55FT	Stock5,376	24V	470MHz ~ 860MHz	-	11.5dB	15W	15 @ 200mA, 5V	1.25A	200°C (TJ)	Chassis, Stud Mount	55FT	55FT