Page 7 - Microsemi Corporation Products - Transistors - Bipolar (BJT) - RF

10502
Microsemi Corporation

TRANS BIPO 50V 500W 55SM

Package: 55SM

Stock2,800
1214-370M
Microsemi Corporation

TRANS RF BIPO 600W 25A 55ST1

Package: 55ST

Stock3,424
1214-110M
Microsemi Corporation

TRANS RF BIPO 270W 8A 55KT1

Package: 55KT

Stock6,144
0510-50A
Microsemi Corporation

TRANS RF BIPO 50W 1000MHZ 55AV2

Package: 55AV

Stock2,464
MS2200
Microsemi Corporation

TRANS RF BIPO 1167W 43.2A MS102

Package: M102

Stock7,408
1214-150L
Microsemi Corporation

TRANS BIPO 55ST-1

Package: 55ST-1

Stock6,992
1517-110M
Microsemi Corporation

TRANS RF BIPO 350W 9A 55AW1

Package: 55AW-1

Stock7,568
UTV8100B
Microsemi Corporation

TRANS RF BIPO 290W 15A 55RT2

Package: 55RT

Stock3,424
1214-300
Microsemi Corporation

TRANS RF BIPO 88W 4A 55KT

Package: 55KT

Stock4,368
1214-300M
Microsemi Corporation

TRANS RF BIPO 88W 4A 55ST1

Package: 55ST

Stock6,656
2731-100M
Microsemi Corporation

TRANS RF BIPO 575W 15A 55KS1

Package: 55KS-1

Stock3,248
TPR700
Microsemi Corporation

TRANS RF BIPO 2050W 55A 55KT1

Package: 55KT

Stock6,720
2729-170
Microsemi Corporation

TRANS RF BIPO 570W 17A 55KS1

Package: 55KS-1

Stock2,016
0910-150M
Microsemi Corporation

TRAN RF BIPO 400W 1000MHZ 55KT1

Package: 55KT

Stock2,592
1214-220M
Microsemi Corporation

TRANS RF BIPO 700W 20A 55ST1

Package: 55ST

Stock6,864
0910-60M
Microsemi Corporation

TRAN RF BIPO 180W 1000MHZ 55AW

Package: 55AW

Stock2,656
2729-125
Microsemi Corporation

TRANS RF BIPO 350W 15A 55KS1

Package: 55KS-1

Stock5,008
MDS400
Microsemi Corporation

TRANS RF BIPO 1450W 40A 55KT1

Package: 55KT

Stock6,224
MS2267
Microsemi Corporation

TRANS RF BIPO 575W 20A M214

Package: M214

Stock4,592
TAN300
Microsemi Corporation

TRANS RF BIPO 65V 20A 55KT1

Package: 55KT

Stock3,744

Part Number	Manufacturer	Description	Package	Stock	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
10502	Microsemi Corporation	TRANS BIPO 50V 500W 55SM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 8.5dB Power - Max: 1458W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Current - Collector (Ic) (Max): 40A Operating Temperature: 230°C (TJ) Mounting Type: Chassis Mount Package / Case: 55SM Supplier Device Package: 55SM	Package: 55SM	Stock2,800	65V	-	-	8.5dB	1458W	20 @ 5A, 5V	40A	230°C (TJ)	Chassis Mount	55SM	55SM
1214-370M	Microsemi Corporation	TRANS RF BIPO 600W 25A 55ST1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 75V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 8.7dB ~ 9dB Power - Max: 600W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 25A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55ST Supplier Device Package: 55ST	Package: 55ST	Stock3,424	75V	1.2GHz ~ 1.4GHz	-	8.7dB ~ 9dB	600W	10 @ 5A, 5V	25A	200°C (TJ)	Chassis Mount	55ST	55ST
1214-110M	Microsemi Corporation	TRANS RF BIPO 270W 8A 55KT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 75V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7.4dB Power - Max: 270W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	Package: 55KT	Stock6,144	75V	1.2GHz ~ 1.4GHz	-	7.4dB	270W	-	8A	200°C (TJ)	Chassis Mount	55KT	55KT
0510-50A	Microsemi Corporation	TRANS RF BIPO 50W 1000MHZ 55AV2 Transistor Type: - Voltage - Collector Emitter Breakdown (Max): 27V Frequency - Transition: 500MHz ~ 1GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 50W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 3.7A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AV Supplier Device Package: 55AV	Package: 55AV	Stock2,464	27V	500MHz ~ 1GHz	-	7dB	50W	10 @ 500mA, 5V	3.7A	200°C (TJ)	Chassis Mount	55AV	55AV
MS2200	Microsemi Corporation	TRANS RF BIPO 1167W 43.2A MS102 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 400MHz ~ 500MHz Noise Figure (dB Typ @ f): - Gain: 9.7dB Power - Max: 1167W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Current - Collector (Ic) (Max): 43.2A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M102 Supplier Device Package: M102	Package: M102	Stock7,408	65V	400MHz ~ 500MHz	-	9.7dB	1167W	20 @ 5A, 5V	43.2A	200°C (TJ)	Chassis Mount	M102	M102
1214-150L	Microsemi Corporation	TRANS BIPO 55ST-1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7.15dB ~ 8.7dB Power - Max: 320W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 15A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55ST-1 Supplier Device Package: 55ST-1	Package: 55ST-1	Stock6,992	65V	1.2GHz ~ 1.4GHz	-	7.15dB ~ 8.7dB	320W	20 @ 1A, 5V	15A	200°C (TJ)	Chassis Mount	55ST-1	55ST-1
1517-110M	Microsemi Corporation	TRANS RF BIPO 350W 9A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: 1.48GHz ~ 1.65GHz Noise Figure (dB Typ @ f): - Gain: 7.3dB ~ 8.6dB Power - Max: 350W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 9A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 55AW-1 Supplier Device Package: 55AW-1	Package: 55AW-1	Stock7,568	70V	1.48GHz ~ 1.65GHz	-	7.3dB ~ 8.6dB	350W	20 @ 1A, 5V	9A	-	Chassis Mount	55AW-1	55AW-1
UTV8100B	Microsemi Corporation	TRANS RF BIPO 290W 15A 55RT2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 8.5dB ~ 9.5dB Power - Max: 290W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 15A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55RT Supplier Device Package: 55RT	Package: 55RT	Stock3,424	60V	470MHz ~ 860MHz	-	8.5dB ~ 9.5dB	290W	20 @ 1A, 5V	15A	200°C (TJ)	Chassis Mount	55RT	55RT
1214-300	Microsemi Corporation	TRANS RF BIPO 88W 4A 55KT Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 88W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	Package: 55KT	Stock4,368	50V	1.2GHz ~ 1.4GHz	-	7dB	88W	20 @ 500mA, 5V	4A	200°C (TJ)	Chassis Mount	55KT	55KT
1214-300M	Microsemi Corporation	TRANS RF BIPO 88W 4A 55ST1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 88W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55ST Supplier Device Package: 55ST	Package: 55ST	Stock6,656	50V	1.2GHz ~ 1.4GHz	-	7dB	88W	20 @ 500mA, 5V	4A	200°C (TJ)	Chassis Mount	55ST	55ST
2731-100M	Microsemi Corporation	TRANS RF BIPO 575W 15A 55KS1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 2.7GHz ~ 3.1GHz Noise Figure (dB Typ @ f): - Gain: 8db ~ 9.4dB Power - Max: 575W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V Current - Collector (Ic) (Max): 15A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KS-1 Supplier Device Package: 55KS-1	Package: 55KS-1	Stock3,248	65V	2.7GHz ~ 3.1GHz	-	8db ~ 9.4dB	575W	15 @ 600mA, 5V	15A	200°C (TJ)	Chassis Mount	55KS-1	55KS-1
TPR700	Microsemi Corporation	TRANS RF BIPO 2050W 55A 55KT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 6.7dB Power - Max: 2050W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 55A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	Package: 55KT	Stock6,720	65V	1.03GHz ~ 1.09GHz	-	6.7dB	2050W	10 @ 1A, 5V	55A	200°C (TJ)	Chassis Mount	55KT	55KT
2729-170	Microsemi Corporation	TRANS RF BIPO 570W 17A 55KS1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 2.7GHz ~ 2.9GHz Noise Figure (dB Typ @ f): - Gain: 8.2dB ~ 8.6dB Power - Max: 570W DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 60mA, 5V Current - Collector (Ic) (Max): 17A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KS-1 Supplier Device Package: 55KS-1	Package: 55KS-1	Stock2,016	65V	2.7GHz ~ 2.9GHz	-	8.2dB ~ 8.6dB	570W	18 @ 60mA, 5V	17A	200°C (TJ)	Chassis Mount	55KS-1	55KS-1
0910-150M	Microsemi Corporation	TRAN RF BIPO 400W 1000MHZ 55KT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 890MHz ~ 1GHz Noise Figure (dB Typ @ f): - Gain: 8.1dB ~ 8.5dB Power - Max: 400W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 12A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	Package: 55KT	Stock2,592	65V	890MHz ~ 1GHz	-	8.1dB ~ 8.5dB	400W	-	12A	200°C (TJ)	Chassis Mount	55KT	55KT
1214-220M	Microsemi Corporation	TRANS RF BIPO 700W 20A 55ST1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7.4dB Power - Max: 700W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55ST Supplier Device Package: 55ST	Package: 55ST	Stock6,864	70V	1.2GHz ~ 1.4GHz	-	7.4dB	700W	10 @ 1A, 5V	20A	200°C (TJ)	Chassis Mount	55ST	55ST
0910-60M	Microsemi Corporation	TRAN RF BIPO 180W 1000MHZ 55AW Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 890MHz ~ 1GHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 8.5dB Power - Max: 180W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	Package: 55AW	Stock2,656	65V	890MHz ~ 1GHz	-	8dB ~ 8.5dB	180W	-	8A	200°C (TJ)	Chassis Mount	55AW	55AW
2729-125	Microsemi Corporation	TRANS RF BIPO 350W 15A 55KS1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 2.7GHz ~ 2.9GHz Noise Figure (dB Typ @ f): - Gain: 9dB ~ 9.5dB Power - Max: 350W DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 600mA, 5V Current - Collector (Ic) (Max): 15A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KS-1 Supplier Device Package: 55KS-1	Package: 55KS-1	Stock5,008	65V	2.7GHz ~ 2.9GHz	-	9dB ~ 9.5dB	350W	18 @ 600mA, 5V	15A	200°C (TJ)	Chassis Mount	55KS-1	55KS-1
MDS400	Microsemi Corporation	TRANS RF BIPO 1450W 40A 55KT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 6.5dB Power - Max: 1450W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 40A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	Package: 55KT	Stock6,224	55V	1.03GHz ~ 1.09GHz	-	6.5dB	1450W	10 @ 1A, 5V	40A	200°C (TJ)	Chassis Mount	55KT	55KT
MS2267	Microsemi Corporation	TRANS RF BIPO 575W 20A M214 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 8.7dB Power - Max: 575W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M214 Supplier Device Package: M214	Package: M214	Stock4,592	60V	960MHz ~ 1.215GHz	-	8dB ~ 8.7dB	575W	10 @ 1A, 5V	20A	250°C (TJ)	Chassis Mount	M214	M214
TAN300	Microsemi Corporation	TRANS RF BIPO 65V 20A 55KT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 6.6dB Power - Max: 1166W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1mA, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	Package: 55KT	Stock3,744	65V	960MHz ~ 1.215GHz	-	6.6dB	1166W	10 @ 1mA, 5V	20A	200°C (TJ)	Chassis Mount	55KT	55KT
UMIL100A	Microsemi Corporation	TRANS RF BIPO 270W 20A 55JU2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 31V Frequency - Transition: 225MHz ~ 400MHz Noise Figure (dB Typ @ f): - Gain: 7.2dB ~ 8.5dB Power - Max: 270W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 55JU Supplier Device Package: 55JU	Package: 55JU	Stock2,752	31V	225MHz ~ 400MHz	-	7.2dB ~ 8.5dB	270W	10 @ 1A, 5V	20A	150°C (TJ)	Chassis Mount	55JU	55JU
JTDB25	Microsemi Corporation	TRANSISTOR BIPO 55AW-1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7.5dB Power - Max: 97W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW-1 Supplier Device Package: 55AW-1	Package: 55AW-1	Stock4,304	55V	960MHz ~ 1.215GHz	-	7.5dB	97W	20 @ 500mA, 5V	5A	200°C (TJ)	Chassis Mount	55AW-1	55AW-1
DME400A	Microsemi Corporation	TRANSISTOR BIPO 55AW-1 Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Stock3,344	-	-	-	-	-	-	-	-	-	-	-
0204-125	Microsemi Corporation	TRANS RF BIPO 125W 500MHZ 55JT2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 225MHz ~ 400MHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 8.5dB Power - Max: 270W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 16A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55JT Supplier Device Package: 55JT	Package: 55JT	Stock4,816	60V	225MHz ~ 400MHz	-	7dB ~ 8.5dB	270W	20 @ 1A, 5V	16A	200°C (TJ)	Chassis Mount	55JT	55JT
MSC1450M	Microsemi Corporation	TRANS RF BIPO 910W 28A M216 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.09GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 910W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 28A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	Package: M216	Stock5,504	65V	1.09GHz	-	7dB	910W	15 @ 1A, 5V	28A	250°C (TJ)	Chassis Mount	M216	M216
MS2473	Microsemi Corporation	TRANS RF BIPO 2300W 46A M112 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.09GHz Noise Figure (dB Typ @ f): - Gain: 6dB Power - Max: 2300W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 5V Current - Collector (Ic) (Max): 46A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M112 Supplier Device Package: M112	Package: M112	Stock6,384	65V	1.09GHz	-	6dB	2300W	5 @ 1A, 5V	46A	200°C (TJ)	Chassis Mount	M112	M112
1214-55	Microsemi Corporation	TRANS BIPO 55AW-1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 175W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	Package: 55AW	Stock3,136	50V	1.2GHz ~ 1.4GHz	-	7dB	175W	20 @ 1A, 5V	8A	200°C (TJ)	Chassis Mount	55AW	55AW
MS2421	Microsemi Corporation	TRANS RF BIPO 875W 22A M103 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.3dB Power - Max: 875W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 22A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M103 Supplier Device Package: M103	Package: M103	Stock7,232	65V	1.025GHz ~ 1.15GHz	-	6.3dB	875W	10 @ 500mA, 5V	22A	200°C (TJ)	Chassis Mount	M103	M103