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Microsemi Corporation |
TRANS RF BIPO 1000W 28A M216
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 1.025GHz ~ 1.15GHz
- Noise Figure (dB Typ @ f): -
- Gain: 6.5dB
- Power - Max: 1000W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
- Current - Collector (Ic) (Max): 28A
- Operating Temperature: 250°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M216
- Supplier Device Package: M216
|
Package: M216 |
Stock5,584 |
|
65V | 1.025GHz ~ 1.15GHz | - | 6.5dB | 1000W | 15 @ 1A, 5V | 28A | 250°C (TJ) | Chassis Mount | M216 | M216 |
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Microsemi Corporation |
TRANS RF BIPO 290W 20A M174
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 18V
- Frequency - Transition: 30MHz
- Noise Figure (dB Typ @ f): -
- Gain: 11dB ~ 13dB
- Power - Max: 290W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5mA, 5V
- Current - Collector (Ic) (Max): 20A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M174
- Supplier Device Package: M174
|
Package: M174 |
Stock6,624 |
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18V | 30MHz | - | 11dB ~ 13dB | 290W | 10 @ 5mA, 5V | 20A | 200°C (TJ) | Chassis Mount | M174 | M174 |
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Microsemi Corporation |
TRANS RF BIPO 1W 200MA TO39
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 17V
- Frequency - Transition: 3GHz
- Noise Figure (dB Typ @ f): -
- Gain: 13.5dB
- Power - Max: 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
|
Package: TO-205AD, TO-39-3 Metal Can |
Stock11,112 |
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17V | 3GHz | - | 13.5dB | 1W | 40 @ 50mA, 5V | 200mA | - | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 |
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Microsemi Corporation |
TRANS RF BIPO 3.5W 400MA TO39
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 70V
- Frequency - Transition: 1GHz ~ 1.4GHz
- Noise Figure (dB Typ @ f): -
- Gain: 14dB
- Power - Max: 3.5W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 6V
- Current - Collector (Ic) (Max): 400mA
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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Package: TO-205AD, TO-39-3 Metal Can |
Stock3,168 |
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70V | 1GHz ~ 1.4GHz | - | 14dB | 3.5W | 15 @ 50mA, 6V | 400mA | - | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 |
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Microsemi Corporation |
TRANS RF BIPO 125W 2.5A 55CT1
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 55V
- Frequency - Transition: 960MHz ~ 1.215GHz
- Noise Figure (dB Typ @ f): -
- Gain: 8.5dB ~ 10dB
- Power - Max: 125W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
- Current - Collector (Ic) (Max): 2.5A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55CT
- Supplier Device Package: 55CT
|
Package: 55CT |
Stock3,328 |
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55V | 960MHz ~ 1.215GHz | - | 8.5dB ~ 10dB | 125W | 10 @ 300mA, 5V | 2.5A | 200°C (TJ) | Chassis Mount | 55CT | 55CT |
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Microsemi Corporation |
TRANS RF BIPO 1350W 40A M112
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 1.025GHz ~ 1.15GHz
- Noise Figure (dB Typ @ f): -
- Gain: 5.6dB
- Power - Max: 1350W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V
- Current - Collector (Ic) (Max): 40A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M112
- Supplier Device Package: M112
|
Package: M112 |
Stock2,864 |
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65V | 1.025GHz ~ 1.15GHz | - | 5.6dB | 1350W | 5 @ 250mA, 5V | 40A | 200°C (TJ) | Chassis Mount | M112 | M112 |
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Microsemi Corporation |
TRANS RF NPN 5GHZ 15V MACR0 X
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
- Gain: 13dB ~ 15.5dB
- Power - Max: 1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Macro-X
- Supplier Device Package: Macro-X
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Package: Macro-X |
Stock5,744 |
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15V | 5GHz | 3dB ~ 3.5dB @ 500MHz | 13dB ~ 15.5dB | 1.25W | 90 @ 50mA, 5V | 200mA | 150°C (TJ) | Surface Mount | Macro-X | Macro-X |
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Microsemi Corporation |
TRANS NPN 15V 200MA 8-SOIC
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
- Gain: 13dB ~ 15.5dB
- Power - Max: 1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock12,312 |
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15V | 5GHz | 2dB ~ 3dB @ 500MHz | 13dB ~ 15.5dB | 1.25W | 50 @ 50mA, 5V | 200mA | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Microsemi Corporation |
TRANS NPN 15V 200MA 8-SOIC
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
- Gain: 13dB ~ 15.5dB
- Power - Max: 1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,320 |
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15V | 5GHz | 2dB ~ 3dB @ 500MHz | 13dB ~ 15.5dB | 1.25W | 50 @ 50mA, 5V | 200mA | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Microsemi Corporation |
TRANS NPN 15V 30MA TO-72
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 4GHz
- Noise Figure (dB Typ @ f): 1.5dB @ 450MHz
- Gain: 6.5dB ~ 10.5dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AF, TO-72-4 Metal Can
- Supplier Device Package: TO-72
|
Package: TO-206AF, TO-72-4 Metal Can |
Stock12,960 |
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15V | 4GHz | 1.5dB @ 450MHz | 6.5dB ~ 10.5dB | 200mW | 30 @ 5mA, 5V | 30mA | 200°C (TJ) | Through Hole | TO-206AF, TO-72-4 Metal Can | TO-72 |
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Microsemi Corporation |
TRANS NPN 18V 200MA MACRO X
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 18V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
- Gain: 13dB ~ 15.5dB
- Power - Max: 1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Micro-X ceramic (84C)
- Supplier Device Package: Micro-X ceramic (84C)
|
Package: Micro-X ceramic (84C) |
Stock250,548 |
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18V | 5GHz | 3dB ~ 3.5dB @ 500MHz | 13dB ~ 15.5dB | 1.25W | 50 @ 50mA, 5V | 200mA | 150°C (TJ) | Surface Mount | Micro-X ceramic (84C) | Micro-X ceramic (84C) |
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Microsemi Corporation |
TRANS NPN 15V 200MA MACRO X
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
- Gain: 13dB ~ 15.5dB
- Power - Max: 1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Micro-X ceramic (84C)
- Supplier Device Package: Micro-X ceramic (84C)
|
Package: Micro-X ceramic (84C) |
Stock48,072 |
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15V | 5GHz | 3dB ~ 3.5dB @ 500MHz | 13dB ~ 15.5dB | 1.25W | 90 @ 50mA, 5V | 200mA | 150°C (TJ) | Surface Mount | Micro-X ceramic (84C) | Micro-X ceramic (84C) |
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Microsemi Corporation |
TRANS NPN 18V 200MA MACRO X
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 18V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
- Gain: 13dB ~ 15.5dB
- Power - Max: 1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Micro-X ceramic (84C)
- Supplier Device Package: Micro-X ceramic (84C)
|
Package: Micro-X ceramic (84C) |
Stock5,808 |
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18V | 5GHz | 3dB ~ 3.5dB @ 500MHz | 13dB ~ 15.5dB | 1.25W | 50 @ 50mA, 5V | 200mA | 150°C (TJ) | Surface Mount | Micro-X ceramic (84C) | Micro-X ceramic (84C) |
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Microsemi Corporation |
TRANS NPN 16V 150MA MACRO X
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 16V
- Frequency - Transition: 870MHz
- Noise Figure (dB Typ @ f): -
- Gain: 9.5dB
- Power - Max: 2W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
- Current - Collector (Ic) (Max): 150mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: Micro-X ceramic (84C)
- Supplier Device Package: Micro-X ceramic (84C)
|
Package: Micro-X ceramic (84C) |
Stock4,992 |
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16V | 870MHz | - | 9.5dB | 2W | 30 @ 50mA, 10V | 150mA | - | Surface Mount | Micro-X ceramic (84C) | Micro-X ceramic (84C) |
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Microsemi Corporation |
TRANS NPN 16V 500MA POWERMACRO
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 16V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 11dB ~ 12.5dB
- Power - Max: 3W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
- Current - Collector (Ic) (Max): 500mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: Power Macro
- Supplier Device Package: Power Macro
|
Package: Power Macro |
Stock2,192 |
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16V | - | - | 11dB ~ 12.5dB | 3W | 50 @ 100mA, 5V | 500mA | - | Surface Mount | Power Macro | Power Macro |
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Microsemi Corporation |
TRANS NPN 16V 500MA POWERMACRO
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 16V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 11dB ~ 13dB
- Power - Max: 3W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
- Current - Collector (Ic) (Max): 500mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: Power Macro
- Supplier Device Package: Power Macro
|
Package: Power Macro |
Stock7,664 |
|
16V | - | - | 11dB ~ 13dB | 3W | 30 @ 250mA, 5V | 500mA | - | Surface Mount | Power Macro | Power Macro |
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Microsemi Corporation |
TRANS NPN 16V 500MA POWERMACRO
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 16V
- Frequency - Transition: 175MHz
- Noise Figure (dB Typ @ f): -
- Gain: 11dB ~ 13dB
- Power - Max: 3W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
- Current - Collector (Ic) (Max): 500mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: Power Macro
- Supplier Device Package: Power Macro
|
Package: Power Macro |
Stock4,320 |
|
16V | 175MHz | - | 11dB ~ 13dB | 3W | 30 @ 250mA, 5V | 500mA | - | Surface Mount | Power Macro | Power Macro |
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Microsemi Corporation |
TRANS NPN 70V 400MA TO-39
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 70V
- Frequency - Transition: 1.5GHz
- Noise Figure (dB Typ @ f): -
- Gain: 13.5dB
- Power - Max: 3.5W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 6V
- Current - Collector (Ic) (Max): 400mA
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-39
- Supplier Device Package: TO-39
|
Package: TO-39 |
Stock4,384 |
|
70V | 1.5GHz | - | 13.5dB | 3.5W | 15 @ 50mA, 6V | 400mA | - | Through Hole | TO-39 | TO-39 |
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Microsemi Corporation |
TRANS RF BIPO 8750W 100A 55TU1
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 1.03GHz
- Noise Figure (dB Typ @ f): -
- Gain: 8.9dB
- Power - Max: 8750W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
- Current - Collector (Ic) (Max): 100A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 55TU-1
- Supplier Device Package: 55TU-1
|
Package: 55TU-1 |
Stock2,784 |
|
65V | 1.03GHz | - | 8.9dB | 8750W | 20 @ 5A, 5V | 100A | 200°C (TJ) | Surface Mount | 55TU-1 | 55TU-1 |
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Microsemi Corporation |
TRANSISTOR BIPO 55TU-1
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 1.03GHz
- Noise Figure (dB Typ @ f): -
- Gain: 10.2dBd
- Power - Max: 2095W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
- Current - Collector (Ic) (Max): 60A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55TU-1
- Supplier Device Package: 55TU-1
|
Package: 55TU-1 |
Stock5,328 |
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65V | 1.03GHz | - | 10.2dBd | 2095W | 20 @ 1A, 5V | 60A | 200°C (TJ) | Chassis Mount | 55TU-1 | 55TU-1 |
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Microsemi Corporation |
TRANS RF BIPO 1944W 50A 55SM1
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 1.03GHz
- Noise Figure (dB Typ @ f): -
- Gain: 8dB ~ 9dB
- Power - Max: 1944W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
- Current - Collector (Ic) (Max): 50A
- Operating Temperature: 230°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55SM
- Supplier Device Package: 55SM
|
Package: 55SM |
Stock2,544 |
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65V | 1.03GHz | - | 8dB ~ 9dB | 1944W | 20 @ 5A, 5V | 50A | 230°C (TJ) | Chassis Mount | 55SM | 55SM |
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Microsemi Corporation |
TRANS RF BIPO 65V 80A 55SW1
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 1.03GHz
- Noise Figure (dB Typ @ f): -
- Gain: 10dB ~ 10.5dB
- Power - Max: 3400W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
- Current - Collector (Ic) (Max): 80A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55SW
- Supplier Device Package: 55SW
|
Package: 55SW |
Stock5,648 |
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65V | 1.03GHz | - | 10dB ~ 10.5dB | 3400W | 10 @ 5A, 5V | 80A | 200°C (TJ) | Chassis Mount | 55SW | 55SW |
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Microsemi Corporation |
TRANS RF BIPO 2900W 80A 55KV1
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 1.09GHz
- Noise Figure (dB Typ @ f): -
- Gain: 6dB
- Power - Max: 2900W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
- Current - Collector (Ic) (Max): 80A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55KV
- Supplier Device Package: 55KV
|
Package: 55KV |
Stock5,152 |
|
65V | 1.09GHz | - | 6dB | 2900W | 10 @ 1A, 5V | 80A | 200°C (TJ) | Chassis Mount | 55KV | 55KV |
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Microsemi Corporation |
TRANS RF BIPO 1458W 60A 55ST1
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 1.09GHz
- Noise Figure (dB Typ @ f): -
- Gain: 8.6dB
- Power - Max: 1458W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
- Current - Collector (Ic) (Max): 60A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55ST-1
- Supplier Device Package: 55ST-1
|
Package: 55ST-1 |
Stock4,240 |
|
65V | 1.09GHz | - | 8.6dB | 1458W | 20 @ 1A, 5V | 60A | 200°C (TJ) | Chassis Mount | 55ST-1 | 55ST-1 |
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Microsemi Corporation |
TRANS RF BIPO 833W 24A 55ST1
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 70V
- Frequency - Transition: 1.03GHz ~ 1.09GHz
- Noise Figure (dB Typ @ f): -
- Gain: 9.2dB
- Power - Max: 833W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
- Current - Collector (Ic) (Max): 24A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55ST
- Supplier Device Package: 55ST
|
Package: 55ST |
Stock7,872 |
|
70V | 1.03GHz ~ 1.09GHz | - | 9.2dB | 833W | 20 @ 1A, 5V | 24A | 200°C (TJ) | Chassis Mount | 55ST | 55ST |
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Microsemi Corporation |
TRANS RF BIPO 2500W 50A 55ST-1
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 75V
- Frequency - Transition: 960MHz ~ 1.215GHz
- Noise Figure (dB Typ @ f): -
- Gain: 9dB
- Power - Max: 2500W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
- Current - Collector (Ic) (Max): 50A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55ST
- Supplier Device Package: 55ST
|
Package: 55ST |
Stock5,792 |
|
75V | 960MHz ~ 1.215GHz | - | 9dB | 2500W | 20 @ 1A, 5V | 50A | 200°C (TJ) | Chassis Mount | 55ST | 55ST |
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Microsemi Corporation |
TRANS RF BIPO 1450W 40A 55ST1
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 960MHz ~ 1.215GHz
- Noise Figure (dB Typ @ f): -
- Gain: 7dB ~ 7.5dB
- Power - Max: 1450W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
- Current - Collector (Ic) (Max): 40A
- Operating Temperature: 230°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55ST
- Supplier Device Package: 55ST
|
Package: 55ST |
Stock7,328 |
|
65V | 960MHz ~ 1.215GHz | - | 7dB ~ 7.5dB | 1450W | 10 @ 1A, 5V | 40A | 230°C (TJ) | Chassis Mount | 55ST | 55ST |
|
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Microsemi Corporation |
TRANS RF BIPO 2500 50A 55ST1
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 1.025GHz ~ 1.15GHz
- Noise Figure (dB Typ @ f): -
- Gain: 9dB ~ 10dB
- Power - Max: 2500W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 600mA, 5V
- Current - Collector (Ic) (Max): 50A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55ST-1
- Supplier Device Package: 55ST-1
|
Package: 55ST-1 |
Stock4,624 |
|
65V | 1.025GHz ~ 1.15GHz | - | 9dB ~ 10dB | 2500W | 20 @ 600mA, 5V | 50A | 200°C (TJ) | Chassis Mount | 55ST-1 | 55ST-1 |