Page 12 - NXP Products - Transistors - FETs, MOSFETs - Single

PH4530AL,115
NXP

MOSFET N-CH 30V LFPAK

Package: SC-100, SOT-669

Stock4,608
BUK7210-55B/C1,118
NXP

MOSFET N-CH 55V DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,584
BUK9222-55A/C1,118
NXP

MOSFET N-CH 55V DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,952
BUK9237-55A/C1,118
NXP

MOSFET N-CH 55V DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,696
BUK9240-100A/C1,11
NXP

MOSFET N-CH 100V DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,624
BUK7628-100A/C,118
NXP

MOSFET N-CH 100V D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,656
PHP45NQ10TA,127
NXP

MOSFET N-CH 100V 47A TO220AB

Package: TO-220-3

Stock7,968
PHD18NQ10T,118
NXP

MOSFET N-CH 100V 18A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,904
BUK9535-55,127
NXP

MOSFET N-CH 55V 34A TO220AB

Package: TO-220-3

Stock2,752
BUK7524-55,127
NXP

MOSFET N-CH 55V TO220AB

Package: TO-220-3

Stock3,088
PMN38EN,165
NXP

MOSFET N-CH 30V 5.4A 6TSOP

Package: SC-74, SOT-457

Stock4,752
BUK7213-40A,118
NXP

MOSFET N-CH 40V 55A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,968
PH3430AL,115
NXP

MOSFET N-CH 30V 100A LFPAK

Package: SC-100, SOT-669

Stock4,976
PH2030AL,115
NXP

MOSFET N-CH 30V LFPAK

Package: SC-100, SOT-669

Stock4,896
PH1825AL,115
NXP

MOSFET N-CH 25V 100A LFPAK

Package: SC-100, SOT-669

Stock3,616
2N7002K,215
NXP

MOSFET N-CH 60V 340MA SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock6,800
PMN49EN,165
NXP

MOSFET N-CH 30V 4.6A 6TSOP

Package: SC-74, SOT-457

Stock6,768
PHP165NQ08T,127
NXP

MOSFET N-CH 75V 75A TO220AB

Package: TO-220-3

Stock3,024
BUK9213-30A,118
NXP

MOSFET N-CH 30V 55A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,912
BUK7E4R3-75C,127
NXP

MOSFET N-CH 75V 100A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,528

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
PH4530AL,115	NXP	MOSFET N-CH 30V LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock4,608	MOSFET (Metal Oxide)	30V	-	-	-	-	-	-	-	-	-	-	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
BUK7210-55B/C1,118	NXP	MOSFET N-CH 55V DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2453pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 185°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,584	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 1mA	35nC @ 10V	2453pF @ 25V	±20V	-	167W (Tc)	10 mOhm @ 25A, 10V	-55°C ~ 185°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK9222-55A/C1,118	NXP	MOSFET N-CH 55V DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 103W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,952	MOSFET (Metal Oxide)	55V	48A (Tc)	4.5V, 10V	2V @ 1mA	-	2210pF @ 25V	±15V	-	103W (Tc)	20 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK9237-55A/C1,118	NXP	MOSFET N-CH 55V DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1236pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 77W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,696	MOSFET (Metal Oxide)	55V	32A (Tc)	4.5V, 10V	2V @ 1mA	17.6nC @ 5V	1236pF @ 25V	±15V	-	77W (Tc)	33 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK9240-100A/C1,11	NXP	MOSFET N-CH 100V DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3072pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 38.6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,624	MOSFET (Metal Oxide)	100V	33A (Tc)	4.5V, 10V	2V @ 1mA	-	3072pF @ 25V	±10V	-	114W (Tc)	38.6 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK7628-100A/C,118	NXP	MOSFET N-CH 100V D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 166W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,656	MOSFET (Metal Oxide)	100V	47A (Tc)	10V	4V @ 1mA	-	3100pF @ 25V	±20V	-	166W (Tc)	28 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PHP45NQ10TA,127	NXP	MOSFET N-CH 100V 47A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,968	MOSFET (Metal Oxide)	100V	47A (Tc)	-	4V @ 1mA	61nC @ 10V	2600pF @ 25V	-	-	-	25 mOhm @ 25A, 10V	-	Through Hole	TO-220AB	TO-220-3
PHD18NQ10T,118	NXP	MOSFET N-CH 100V 18A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,904	MOSFET (Metal Oxide)	100V	18A (Tc)	10V	4V @ 1mA	21nC @ 10V	633pF @ 25V	±20V	-	79W (Tc)	90 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK9535-55,127	NXP	MOSFET N-CH 55V 34A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 17A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,752	MOSFET (Metal Oxide)	55V	34A (Tc)	5V	2V @ 1mA	-	1400pF @ 25V	±10V	-	85W (Tc)	35 mOhm @ 17A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK7524-55,127	NXP	MOSFET N-CH 55V TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 103W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,088	MOSFET (Metal Oxide)	55V	45A (Tc)	10V	4V @ 1mA	-	1500pF @ 25V	±16V	-	103W (Tc)	24 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PMN38EN,165	NXP	MOSFET N-CH 30V 5.4A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 495pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.75W (Tc) Rds On (Max) @ Id, Vgs: 38 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: SC-74, SOT-457	Stock4,752	MOSFET (Metal Oxide)	30V	5.4A (Tc)	4.5V, 10V	2V @ 1mA	6.1nC @ 4.5V	495pF @ 25V	±20V	-	1.75W (Tc)	38 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
BUK7213-40A,118	NXP	MOSFET N-CH 40V 55A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2245pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,968	MOSFET (Metal Oxide)	40V	55A (Tc)	10V	4V @ 1mA	47nC @ 10V	2245pF @ 25V	±20V	-	150W (Tc)	13 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PH3430AL,115	NXP	MOSFET N-CH 30V 100A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2458pF @ 12V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 15A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock4,976	MOSFET (Metal Oxide)	30V	100A (Tc)	-	2.15V @ 1mA	41nC @ 10V	2458pF @ 12V	-	-	-	3.5 mOhm @ 15A, 10V	-	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
PH2030AL,115	NXP	MOSFET N-CH 30V LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock4,896	MOSFET (Metal Oxide)	30V	-	-	-	-	-	-	-	-	-	-	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
PH1825AL,115	NXP	MOSFET N-CH 25V 100A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock3,616	MOSFET (Metal Oxide)	25V	100A (Tc)	4.5V, 10V	2.15V @ 1mA	31nC @ 4.5V	4300pF @ 12V	±20V	-	104W (Tc)	1.8 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
2N7002K,215	NXP	MOSFET N-CH 60V 340MA SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 830mW (Ta) Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 500mA, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,800	MOSFET (Metal Oxide)	60V	340mA (Ta)	4.5V, 10V	2V @ 1mA	-	40pF @ 10V	±15V	-	830mW (Ta)	3.9 Ohm @ 500mA, 10V	-65°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
PMN49EN,165	NXP	MOSFET N-CH 30V 4.6A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.75W (Tc) Rds On (Max) @ Id, Vgs: 47 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: SC-74, SOT-457	Stock6,768	MOSFET (Metal Oxide)	30V	4.6A (Tc)	4.5V, 10V	2V @ 1mA	8.8nC @ 4.5V	350pF @ 30V	±20V	-	1.75W (Tc)	47 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
PHP165NQ08T,127	NXP	MOSFET N-CH 75V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,024	MOSFET (Metal Oxide)	75V	75A (Tc)	10V	4V @ 1mA	165nC @ 10V	8250pF @ 25V	±20V	-	250W (Tc)	5 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK9213-30A,118	NXP	MOSFET N-CH 30V 55A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2852pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,912	MOSFET (Metal Oxide)	30V	55A (Tc)	4.5V, 10V	2V @ 1mA	37nC @ 5V	2852pF @ 25V	±15V	-	150W (Tc)	11 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK7E4R3-75C,127	NXP	MOSFET N-CH 75V 100A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 142nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11659pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 333W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,528	MOSFET (Metal Oxide)	75V	100A (Tc)	10V	4V @ 1mA	142nC @ 10V	11659pF @ 25V	±20V	-	333W (Tc)	4.3 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
BUK753R4-30B,127	NXP	MOSFET N-CH 30V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4951pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,112	MOSFET (Metal Oxide)	30V	75A (Tc)	10V	4V @ 1mA	75nC @ 10V	4951pF @ 25V	±20V	-	255W (Tc)	3.4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK7226-75A/C1,118	NXP	MOSFET N-CH 75V 45A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2385pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 158W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,056	MOSFET (Metal Oxide)	75V	45A (Tc)	10V	4V @ 1mA	48nC @ 10V	2385pF @ 25V	±20V	-	158W (Tc)	26 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PHU97NQ03LT,127	NXP	MOSFET N-CH 25V 75A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,776	MOSFET (Metal Oxide)	25V	75A (Tc)	4.5V, 10V	2.15V @ 1mA	11.7nC @ 4.5V	1570pF @ 12V	±20V	-	107W (Tc)	6.6 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
PHU77NQ03T,127	NXP	MOSFET N-CH 25V 75A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,864	MOSFET (Metal Oxide)	25V	75A (Tc)	10V	3.2V @ 1mA	17.1nC @ 10V	860pF @ 12V	±20V	-	107W (Tc)	9.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
PHD77NQ03T,118	NXP	MOSFET N-CH 25V 75A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,888	MOSFET (Metal Oxide)	25V	75A (Tc)	10V	3.2V @ 1mA	17.1nC @ 10V	860pF @ 12V	±20V	-	107W (Tc)	9.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PH9030L,115	NXP	MOSFET N-CH 30V 63A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1565pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock4,656	MOSFET (Metal Oxide)	30V	63A (Tc)	4.5V, 10V	2V @ 1mA	13.3nC @ 4.5V	1565pF @ 12V	±20V	-	62.5W (Tc)	9 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
PH1875L,115	NXP	MOSFET N-CH 75V 45.8A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 45.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock5,184	MOSFET (Metal Oxide)	75V	45.8A (Tc)	4.5V, 10V	2V @ 1mA	33.4nC @ 5V	2600pF @ 25V	±15V	-	62.5W (Tc)	16.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
2N7002T,215	NXP	MOSFET N-CH 60V 300MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock5,472	MOSFET (Metal Oxide)	60V	300mA (Ta)	5V, 10V	2.5V @ 1mA	-	40pF @ 10V	±20V	-	830mW (Ta)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3