ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NTR5103NT1G
ON Semiconductor

MOSFET N-CH 60V 0.26A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock384,252
BBS3002-DL-1E
ON Semiconductor

MOSFET P-CH 60V 100A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock13,668
NVD5117PLT4G-VF01
ON Semiconductor

MOSFET P-CH 60V 61A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock67,674
NTMFS4833NT1G
ON Semiconductor

MOSFET N-CH 30V 16A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock19,812
NTB5605PT4G
ON Semiconductor

MOSFET P-CH 60V 18.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock289,416
NTD25P03LT4G
ON Semiconductor

MOSFET P-CH 30V 25A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock451,212
NTD6416ANLT4G
ON Semiconductor

MOSFET N-CH 100V 19A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock180,516
NTD6416ANT4G
ON Semiconductor

MOSFET N-CH 100V 17A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock150,300
NTTFS5116PLTAG
ON Semiconductor

MOSFET P-CH 60V 5.7A 8-WDFN

Package: 8-PowerWDFN

Stock12,108
NTF2955T1G
ON Semiconductor

MOSFET P-CH 60V 1.7A SOT-223

Package: TO-261-4, TO-261AA

Stock2,449,680
NTTFS5826NLTAG
ON Semiconductor

MOSFET N-CH 60V 8A 8-WDFN

Package: 8-PowerWDFN

Stock113,640
NTTFS5820NLTAG
ON Semiconductor

MOSFET N-CH 60V 37A 8DFN

Package: 8-PowerWDFN

Stock12,276
NTF3055L108T1G
ON Semiconductor

MOSFET N-CH 60V 3A SOT223

Package: TO-261-4, TO-261AA

Stock1,723,716
NTD5865NLT4G
ON Semiconductor

MOSFET N-CH 60V 46A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock784,644
NTS4409NT1G
ON Semiconductor

MOSFET N-CH 25V 700MA SOT-323

Package: SC-70, SOT-323

Stock2,630,652
NTJS3151PT1G
ON Semiconductor

MOSFET P-CH 12V 2.7A SOT-363

Package: 6-TSSOP, SC-88, SOT-363

Stock1,881,084
NTJS3157NT1G
ON Semiconductor

MOSFET N-CH 20V 3.2A SOT-363

Package: 6-TSSOP, SC-88, SOT-363

Stock3,742,284
NTR4501NT1G
ON Semiconductor

MOSFET N-CH 20V 3.2A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock3,225,900
NTK3134NT1G
ON Semiconductor

MOSFET N-CH 20V 750MA SOT-723

Package: SOT-723

Stock8,085,756
NTR0202PLT1G
ON Semiconductor

MOSFET P-CH 20V 400MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock4,226,640

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTR5103NT1G	ON Semiconductor	MOSFET N-CH 60V 0.26A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.81nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 240mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock384,252	MOSFET (Metal Oxide)	60V	260mA (Ta)	4.5V, 10V	2.6V @ 250µA	0.81nC @ 5V	40pF @ 25V	±30V	-	300mW (Ta)	2.5 Ohm @ 240mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
BBS3002-DL-1E	ON Semiconductor	MOSFET P-CH 60V 100A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock13,668	MOSFET (Metal Oxide)	60V	100A (Ta)	4V, 10V	-	280nC @ 10V	13200pF @ 20V	±20V	-	90W (Tc)	5.8 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVD5117PLT4G-VF01	ON Semiconductor	MOSFET P-CH 60V 61A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.1W (Ta), 118W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 29A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock67,674	MOSFET (Metal Oxide)	60V	11A (Ta), 61A (Tc)	4.5V, 10V	2.5V @ 250µA	85nC @ 10V	4800pF @ 25V	±20V	-	4.1W (Ta), 118W (Tc)	16 mOhm @ 29A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPak (2 Leads + Tab), SC-63
NTMFS4833NT1G	ON Semiconductor	MOSFET N-CH 30V 16A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 156A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 910mW (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock19,812	MOSFET (Metal Oxide)	30V	16A (Ta), 156A (Tc)	4.5V, 10V	2.5V @ 250µA	88nC @ 11.5V	5600pF @ 12V	±20V	-	910mW (Ta), 125W (Tc)	2 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTB5605PT4G	ON Semiconductor	MOSFET P-CH 60V 18.5A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 8.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock289,416	MOSFET (Metal Oxide)	60V	18.5A (Ta)	5V	2V @ 250µA	22nC @ 5V	1190pF @ 25V	±20V	-	88W (Tc)	140 mOhm @ 8.5A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTD25P03LT4G	ON Semiconductor	MOSFET P-CH 30V 25A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 75W (Tj) Rds On (Max) @ Id, Vgs: 80 mOhm @ 25A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock451,212	MOSFET (Metal Oxide)	30V	25A (Ta)	4V, 5V	2V @ 250µA	20nC @ 5V	1260pF @ 25V	±15V	-	75W (Tj)	80 mOhm @ 25A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD6416ANLT4G	ON Semiconductor	MOSFET N-CH 100V 19A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 74 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock180,516	MOSFET (Metal Oxide)	100V	19A (Tc)	4.5V, 10V	2.2V @ 250µA	40nC @ 10V	1000pF @ 25V	±20V	-	71W (Tc)	74 mOhm @ 19A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD6416ANT4G	ON Semiconductor	MOSFET N-CH 100V 17A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 81 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock150,300	MOSFET (Metal Oxide)	100V	17A (Tc)	10V	4V @ 250µA	20nC @ 10V	620pF @ 25V	±20V	-	71W (Tc)	81 mOhm @ 17A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTTFS5116PLTAG	ON Semiconductor	MOSFET P-CH 60V 5.7A 8-WDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1258pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock12,108	MOSFET (Metal Oxide)	60V	5.7A (Ta)	4.5V, 10V	3V @ 250µA	25nC @ 10V	1258pF @ 30V	±20V	-	3.2W (Ta), 40W (Tc)	52 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NTF2955T1G	ON Semiconductor	MOSFET P-CH 60V 1.7A SOT-223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 492pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 185 mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock2,449,680	MOSFET (Metal Oxide)	60V	1.7A (Ta)	10V	4V @ 1mA	14.3nC @ 10V	492pF @ 25V	±20V	-	1W (Ta)	185 mOhm @ 2.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
NTTFS5826NLTAG	ON Semiconductor	MOSFET N-CH 60V 8A 8-WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock113,640	MOSFET (Metal Oxide)	60V	8A (Ta)	4.5V, 10V	3V @ 250µA	25nC @ 10V	850pF @ 25V	±20V	-	3.1W (Ta), 19W (Tc)	24 mOhm @ 7.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NTTFS5820NLTAG	ON Semiconductor	MOSFET N-CH 60V 37A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1462pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 8.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock12,276	MOSFET (Metal Oxide)	60V	11A (Ta), 37A (Tc)	4.5V, 10V	2.3V @ 250µA	28nC @ 10V	1462pF @ 25V	±20V	-	2.7W (Ta), 33W (Tc)	11.5 mOhm @ 8.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NTF3055L108T1G	ON Semiconductor	MOSFET N-CH 60V 3A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 120 mOhm @ 1.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock1,723,716	MOSFET (Metal Oxide)	60V	3A (Ta)	5V	2V @ 250µA	15nC @ 5V	440pF @ 25V	±15V	-	1.3W (Ta)	120 mOhm @ 1.5A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
NTD5865NLT4G	ON Semiconductor	MOSFET N-CH 60V 46A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock784,644	MOSFET (Metal Oxide)	60V	46A (Tc)	4.5V, 10V	2V @ 250µA	29nC @ 10V	1400pF @ 25V	±20V	-	71W (Tc)	16 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTS4409NT1G	ON Semiconductor	MOSFET N-CH 25V 700MA SOT-323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 280mW (Tj) Rds On (Max) @ Id, Vgs: 350 mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 (SOT323) Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock2,630,652	MOSFET (Metal Oxide)	25V	700mA (Ta)	2.7V, 4.5V	1.5V @ 250µA	1.5nC @ 4.5V	60pF @ 10V	±8V	-	280mW (Tj)	350 mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-3 (SOT323)	SC-70, SOT-323
NTJS3151PT1G	ON Semiconductor	MOSFET P-CH 12V 2.7A SOT-363 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 12V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88/SC70-6/SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock1,881,084	MOSFET (Metal Oxide)	12V	2.7A (Ta)	1.8V, 4.5V	1.2V @ 100µA	8.6nC @ 4.5V	850pF @ 12V	±12V	-	625mW (Ta)	60 mOhm @ 3.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-88/SC70-6/SOT-363	6-TSSOP, SC-88, SOT-363
NTJS3157NT1G	ON Semiconductor	MOSFET N-CH 20V 3.2A SOT-363 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88/SC70-6/SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock3,742,284	MOSFET (Metal Oxide)	20V	3.2A (Ta)	1.8V, 4.5V	1V @ 250µA	15nC @ 4.5V	500pF @ 10V	±8V	-	1W (Ta)	60 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-88/SC70-6/SOT-363	6-TSSOP, SC-88, SOT-363
NTR4501NT1G	ON Semiconductor	MOSFET N-CH 20V 3.2A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.25W (Tj) Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,225,900	MOSFET (Metal Oxide)	20V	3.2A (Ta)	1.8V, 4.5V	1.2V @ 250µA	6nC @ 4.5V	200pF @ 10V	±12V	-	1.25W (Tj)	80 mOhm @ 3.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
NTK3134NT1G	ON Semiconductor	MOSFET N-CH 20V 750MA SOT-723 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 310mW (Ta) Rds On (Max) @ Id, Vgs: 350 mOhm @ 890mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-723 Package / Case: SOT-723	Package: SOT-723	Stock8,085,756	MOSFET (Metal Oxide)	20V	750mA (Ta)	1.5V, 4.5V	1.2V @ 250µA	-	120pF @ 16V	±6V	-	310mW (Ta)	350 mOhm @ 890mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-723	SOT-723
NTR0202PLT1G	ON Semiconductor	MOSFET P-CH 20V 400MA SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 800 mOhm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,226,640	MOSFET (Metal Oxide)	20V	400mA (Ta)	4.5V, 10V	2.3V @ 250µA	2.18nC @ 10V	70pF @ 5V	±20V	-	225mW (Ta)	800 mOhm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
NTS4101PT1G	ON Semiconductor	MOSFET P-CH 20V 1.37A SOT-323 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.37A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 20V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 329mW (Ta) Rds On (Max) @ Id, Vgs: 120 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 (SOT323) Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock449,532	MOSFET (Metal Oxide)	20V	1.37A (Ta)	2.5V, 4.5V	1.5V @ 250µA	9nC @ 4.5V	840pF @ 20V	±8V	-	329mW (Ta)	120 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-3 (SOT323)	SC-70, SOT-323
NTR5198NLT1G	ON Semiconductor	MOSFET N-CH 60V 1.7A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 182pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 155 mOhm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock204,252	MOSFET (Metal Oxide)	60V	1.7A (Ta)	4.5V, 10V	2.5V @ 250µA	2.8nC @ 4.5V	182pF @ 25V	±20V	-	900mW (Ta)	155 mOhm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
NTS4001NT1G	ON Semiconductor	MOSFET N-CH 30V 270MA SOT-323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330mW (Ta) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 (SOT323) Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock1,863,048	MOSFET (Metal Oxide)	30V	270mA (Ta)	2.5V, 4V	1.5V @ 100µA	1.3nC @ 5V	33pF @ 5V	±20V	-	330mW (Ta)	1.5 Ohm @ 10mA, 4V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-3 (SOT323)	SC-70, SOT-323
BSS84LT1G	ON Semiconductor	MOSFET P-CH 50V 130MA SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,646,668	MOSFET (Metal Oxide)	50V	130mA (Ta)	5V	2V @ 250µA	-	30pF @ 5V	±20V	-	225mW (Ta)	10 Ohm @ 100mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
BSS123LT1G	ON Semiconductor	MOSFET N-CH 100V 170MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,098,564	MOSFET (Metal Oxide)	100V	170mA (Ta)	10V	2.8V @ 1mA	-	20pF @ 25V	±20V	-	225mW (Ta)	6 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
BSS138LT1G	ON Semiconductor	MOSFET N-CH 50V 200MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock7,160,040	MOSFET (Metal Oxide)	50V	200mA (Ta)	5V	1.5V @ 1mA	-	50pF @ 25V	±20V	-	225mW (Ta)	3.5 Ohm @ 200mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
BSS138LT3G	ON Semiconductor	MOSFET N-CH 50V 200MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock12,204	MOSFET (Metal Oxide)	50V	200mA (Ta)	5V	1.5V @ 1mA	-	50pF @ 25V	±20V	-	225mW (Ta)	3.5 Ohm @ 200mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
2N7002LT1G	ON Semiconductor	MOSFET N-CH 60V 0.115A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock11,691,168	MOSFET (Metal Oxide)	60V	115mA (Tc)	5V, 10V	2.5V @ 250µA	-	50pF @ 25V	±20V	-	225mW (Ta)	7.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3