Page 11 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NVTFS5116PLTAG
ON Semiconductor

MOSFET P-CH 60V 14A 8WDFN

Package: 8-PowerWDFN

Stock7,360
ATP114-TL-H
ON Semiconductor

MOSFET P-CH 60V 55A ATPAK

Package: ATPAK (2 leads+tab)

Stock4,000
NID9N05ACLT4G
ON Semiconductor

MOSFET N-CH 52V 9A LL DPAK-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,304
NTMFS5844NLT1G
ON Semiconductor

MOSFET N-CH 60V 60A SO-8FL

Package: 8-PowerTDFN

Stock5,312
NDD05N50ZT4G
ON Semiconductor

MOSFET N-CH 500V 5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock251,040
NVTFS5826NLTAG
ON Semiconductor

MOSFET N-CH 60V 20A 8WDFN

Package: 8-PowerWDFN

Stock5,680
NTMFS4841NHT1G
ON Semiconductor

MOSFET N-CH 30V 8.6A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock105,696
NVF3055L108T1G
ON Semiconductor

MOSFET N-CH 60V 3A SOT223

Package: TO-261-4, TO-261AA

Stock7,808
NDD03N60ZT4G
ON Semiconductor

MOSFET N-CH 600V DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock117,528
PCP1302-TD-H
ON Semiconductor

MOSFET P-CH 60V 3A SOT89

Package: TO-243AA

Stock24,000
NTGS5120PT1G
ON Semiconductor

MOSFET P-CH 60V 1.8A 6-TSOP

Package: SOT-23-6

Stock1,424,640
NTMFS4925NT1G
ON Semiconductor

MOSFET N-CH 30V 9.7A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock59,448
NTR4503NT1G
ON Semiconductor

MOSFET N-CH 30V 1.5A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock2,923,644
MMBF0201NLT1G
ON Semiconductor

MOSFET N-CH 20V 300MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock769,848
NTE4153NT1G
ON Semiconductor

MOSFET N-CH 20V 915MA SC-89

Package: SC-89, SOT-490

Stock1,258,164
SBSS84LT1G
ON Semiconductor

MOSFET P-CH 50V 0.13A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock3,376
2V7002WT1G
ON Semiconductor

MOSFET N-CH 60V 310MA SC70-3

Package: SC-70, SOT-323

Stock2,864
2N7002KT1G
ON Semiconductor

MOSFET N-CH 60V 320MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock4,529,520
NTP2955G
ON Semiconductor

MOSFET P-CH 60V 2.4A TO220AB

Package: TO-220-3

Stock65,604
NCV8440ASTT1G
ON Semiconductor

MOSFET N-CH 59V 2.6A SOT-223-4

Package: TO-261-4, TO-261AA

Stock6,208

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NVTFS5116PLTAG	ON Semiconductor	MOSFET P-CH 60V 14A 8WDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1258pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 21W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock7,360	MOSFET (Metal Oxide)	60V	6A (Ta)	4.5V, 10V	3V @ 250µA	25nC @ 10V	1258pF @ 25V	±20V	-	3.2W (Ta), 21W (Tc)	52 mOhm @ 7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
ATP114-TL-H	ON Semiconductor	MOSFET P-CH 60V 55A ATPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 28A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	Package: ATPAK (2 leads+tab)	Stock4,000	MOSFET (Metal Oxide)	60V	55A (Ta)	4V, 10V	-	92nC @ 10V	4000pF @ 20V	±20V	-	60W (Tc)	16 mOhm @ 28A, 10V	150°C (TJ)	Surface Mount	ATPAK	ATPAK (2 leads+tab)
NID9N05ACLT4G	ON Semiconductor	MOSFET N-CH 52V 9A LL DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 52V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 12V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 40V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.74W (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 9A, 12V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,304	MOSFET (Metal Oxide)	52V	9A (Ta)	3V, 12V	2.5V @ 100µA	7nC @ 4.5V	250pF @ 40V	±15V	-	1.74W (Ta)	90 mOhm @ 9A, 12V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPak (2 Leads + Tab), SC-63
NTMFS5844NLT1G	ON Semiconductor	MOSFET N-CH 60V 60A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,312	MOSFET (Metal Oxide)	60V	11.2A (Ta)	4.5V, 10V	2.3V @ 250µA	30nC @ 10V	1460pF @ 25V	±20V	-	3.7W (Ta), 107W (Tc)	12 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NDD05N50ZT4G	ON Semiconductor	MOSFET N-CH 500V 5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock251,040	MOSFET (Metal Oxide)	500V	4.7A (Tc)	10V	4.5V @ 50µA	18.5nC @ 10V	530pF @ 25V	±30V	-	83W (Tc)	1.5 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NVTFS5826NLTAG	ON Semiconductor	MOSFET N-CH 60V 20A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 22W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock5,680	MOSFET (Metal Oxide)	60V	7.6A (Ta)	4.5V, 10V	2.5V @ 250µA	16nC @ 10V	850pF @ 25V	±20V	-	3.2W (Ta), 22W (Tc)	24 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NTMFS4841NHT1G	ON Semiconductor	MOSFET N-CH 30V 8.6A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 2113pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 870mW (Ta), 41.7W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock105,696	MOSFET (Metal Oxide)	30V	8.6A (Ta), 59A (Tc)	4.5V, 10V	2.5V @ 250µA	33nC @ 11.5V	2113pF @ 12V	±20V	-	870mW (Ta), 41.7W (Tc)	7 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVF3055L108T1G	ON Semiconductor	MOSFET N-CH 60V 3A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 120 mOhm @ 1.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock7,808	MOSFET (Metal Oxide)	60V	3A (Ta)	5V	2V @ 250µA	15nC @ 5V	440pF @ 25V	±15V	-	1.3W (Ta)	120 mOhm @ 1.5A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
NDD03N60ZT4G	ON Semiconductor	MOSFET N-CH 600V DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 312pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 61W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock117,528	MOSFET (Metal Oxide)	600V	2.6A (Tc)	10V	4.5V @ 50µA	12nC @ 10V	312pF @ 25V	±30V	-	61W (Tc)	3.6 Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PCP1302-TD-H	ON Semiconductor	MOSFET P-CH 60V 3A SOT89 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 262pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Tc) Rds On (Max) @ Id, Vgs: 266 mOhm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89/PCP-1 Package / Case: TO-243AA	Package: TO-243AA	Stock24,000	MOSFET (Metal Oxide)	60V	3A (Ta)	4V, 10V	2.6V @ 1mA	6.4nC @ 10V	262pF @ 20V	±20V	-	3.5W (Tc)	266 mOhm @ 1.5A, 10V	150°C (TJ)	Surface Mount	SOT-89/PCP-1	TO-243AA
NTGS5120PT1G	ON Semiconductor	MOSFET P-CH 60V 1.8A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 942pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 111 mOhm @ 2.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	Package: SOT-23-6	Stock1,424,640	MOSFET (Metal Oxide)	60V	1.8A (Ta)	4.5V, 10V	3V @ 250µA	18.1nC @ 10V	942pF @ 30V	±20V	-	600mW (Ta)	111 mOhm @ 2.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6
NTMFS4925NT1G	ON Semiconductor	MOSFET N-CH 30V 9.7A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1264pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 920mW (Ta), 23.2W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock59,448	MOSFET (Metal Oxide)	30V	9.7A (Ta), 48A (Tc)	4.5V, 10V	2.2V @ 250µA	21.5nC @ 10V	1264pF @ 15V	±20V	-	920mW (Ta), 23.2W (Tc)	5.6 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTR4503NT1G	ON Semiconductor	MOSFET N-CH 30V 1.5A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 420mW (Ta) Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,923,644	MOSFET (Metal Oxide)	30V	1.5A (Ta)	4.5V, 10V	3V @ 250µA	7nC @ 10V	250pF @ 24V	±20V	-	420mW (Ta)	110 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
MMBF0201NLT1G	ON Semiconductor	MOSFET N-CH 20V 300MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock769,848	MOSFET (Metal Oxide)	20V	300mA (Ta)	4.5V, 10V	2.4V @ 250µA	-	45pF @ 5V	±20V	-	225mW (Ta)	1 Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
NTE4153NT1G	ON Semiconductor	MOSFET N-CH 20V 915MA SC-89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 915mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.82nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 16V Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 300mW (Tj) Rds On (Max) @ Id, Vgs: 230 mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-89-3 Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock1,258,164	MOSFET (Metal Oxide)	20V	915mA (Ta)	1.5V, 4.5V	1.1V @ 250µA	1.82nC @ 4.5V	110pF @ 16V	±6V	-	300mW (Tj)	230 mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-89-3	SC-89, SOT-490
SBSS84LT1G	ON Semiconductor	MOSFET P-CH 50V 0.13A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,376	MOSFET (Metal Oxide)	50V	130mA (Ta)	5V	2V @ 250µA	2.2nC @ 10V	36pF @ 5V	±20V	-	225mW (Ta)	10 Ohm @ 100mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
2V7002WT1G	ON Semiconductor	MOSFET N-CH 60V 310MA SC70-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 280mW (Tj) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 (SOT323) Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock2,864	MOSFET (Metal Oxide)	60V	310mA (Ta)	4.5V, 10V	2.5V @ 250µA	0.7nC @ 4.5V	24.5pF @ 20V	±20V	-	280mW (Tj)	1.6 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-3 (SOT323)	SC-70, SOT-323
2N7002KT1G	ON Semiconductor	MOSFET N-CH 60V 320MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,529,520	MOSFET (Metal Oxide)	60V	320mA (Ta)	4.5V, 10V	2.5V @ 250µA	0.7nC @ 4.5V	24.5pF @ 20V	±20V	-	350mW (Ta)	1.6 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
NTP2955G	ON Semiconductor	MOSFET P-CH 60V 2.4A TO220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 196 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock65,604	MOSFET (Metal Oxide)	60V	2.4A (Ta)	10V	4V @ 250µA	14nC @ 10V	700pF @ 25V	±20V	-	2.4W (Ta), 62.5W (Tc)	196 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NCV8440ASTT1G	ON Semiconductor	MOSFET N-CH 59V 2.6A SOT-223-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 59V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs(th) (Max) @ Id: 1.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 35V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.69W (Ta) Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock6,208	MOSFET (Metal Oxide)	59V	2.6A (Ta)	3.5V, 10V	1.9V @ 100µA	4.5nC @ 4.5V	155pF @ 35V	±15V	-	1.69W (Ta)	110 mOhm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
NDD04N60ZT4G	ON Semiconductor	MOSFET N-CH 600V 4.1A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock895,332	MOSFET (Metal Oxide)	600V	4.1A (Tc)	10V	4.5V @ 50µA	29nC @ 10V	640pF @ 25V	±30V	-	83W (Tc)	2 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTMFS4935NT1G	ON Semiconductor	MOSFET N-CH 30V 13A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 93A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 930mW (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock167,100	MOSFET (Metal Oxide)	30V	13A (Ta), 93A (Tc)	4.5V, 10V	2.2V @ 250µA	49.4nC @ 10V	4850pF @ 15V	±20V	-	930mW (Ta), 48W (Tc)	3.2 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTF5P03T3G	ON Semiconductor	MOSFET P-CH 30V 3.7A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 5.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock169,644	MOSFET (Metal Oxide)	30V	3.7A (Ta)	4.5V, 10V	3V @ 250µA	38nC @ 10V	950pF @ 25V	±20V	-	1.56W (Ta)	100 mOhm @ 5.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
MGSF1N03LT1G	ON Semiconductor	MOSFET N-CH 30V 1.6A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 420mW (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,925,500	MOSFET (Metal Oxide)	30V	1.6A (Ta)	4.5V, 10V	2.4V @ 250µA	-	140pF @ 5V	±20V	-	420mW (Ta)	100 mOhm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
MGSF1N02LT1G	ON Semiconductor	MOSFET N-CH 20V 750MA SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,852,384	MOSFET (Metal Oxide)	20V	750mA (Ta)	4.5V, 10V	2.4V @ 250µA	-	125pF @ 5V	±20V	-	400mW (Ta)	90 mOhm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
NTGS4141NT1G	ON Semiconductor	MOSFET N-CH 30V 3.5A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	Package: SOT-23-6	Stock1,566,420	MOSFET (Metal Oxide)	30V	3.5A (Ta)	4.5V, 10V	3V @ 250µA	12nC @ 10V	560pF @ 24V	±20V	-	500mW (Ta)	25 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6
NTGS4111PT1G	ON Semiconductor	MOSFET P-CH 30V 2.6A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 630mW (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	Package: SOT-23-6	Stock1,527,096	MOSFET (Metal Oxide)	30V	2.6A (Ta)	4.5V, 10V	3V @ 250µA	32nC @ 10V	750pF @ 15V	±20V	-	630mW (Ta)	60 mOhm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6
CPH3351-TL-W	ON Semiconductor	MOSFET P-CH 60V 1.8A CPH3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 262pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CPH Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock7,104	MOSFET (Metal Oxide)	60V	1.8A (Ta)	4V, 10V	2.6V @ 1mA	6nC @ 10V	262pF @ 20V	±20V	-	1W (Ta)	250 mOhm @ 1A, 10V	150°C (TJ)	Surface Mount	3-CPH	TO-236-3, SC-59, SOT-23-3