Page 12 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NTMFS5C682NLT1G
ON Semiconductor

TRENCH 6 60V FET

Package: -

Stock5,008
NVF2955T1G
ON Semiconductor

MOSFET P-CH 60V 2.6A SOT223

Package: TO-261-4, TO-261AA

Stock26,940
NVMFS5C673NLWFAFT1G
ON Semiconductor

TRENCH 6 60V FET

Package: -

Stock6,624
NVTFS5C658NLTAG
ON Semiconductor

MOSFET N-CH 60V 109A 8WDFN

Package: 8-PowerWDFN

Stock2,160
NVTFS5C454NLWFTAG
ON Semiconductor

TRENCH 6 40V FET

Package: -

Stock7,552
NVMFS5844NLT1G
ON Semiconductor

MOSFET N-CH 60V 11.2A SO-8FL

Package: 8-PowerTDFN

Stock3,120
NVTFS5C466NLWFTAG
ON Semiconductor

MOSFET N-CH 40V 51A 8WDFN

Package: 8-PowerWDFN

Stock3,392
NDDP010N25AZT4H
ON Semiconductor

MOSFET N-CH 250V 10A TP-FA

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,288
NVTFS5C466NLTAG
ON Semiconductor

MOSFET N-CH 40V 51A 8WDFN

Package: 8-PowerWDFN

Stock3,856
NVD5C684NLT4G
ON Semiconductor

MOSFET N-CH 60V 38A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,352
NVTFS5C471NLWFTAG
ON Semiconductor

TRENCH 6 40V FET

Package: -

Stock6,096
NVD5C688NLT4G
ON Semiconductor

MOSFET N-CH 60V 17A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,792
NTTFS4C02NTAG
ON Semiconductor

TRENCH 6 30V FET

Package: -

Stock2,768
NVTFS5C478NLWFTAG
ON Semiconductor

TRENCH 6 40V FET

Package: -

Stock4,928
NVTFS5826NLTWG
ON Semiconductor

MOSFET N-CH 60V 20A 8WDFN

Package: 8-PowerWDFN

Stock3,664
NTB60N06T4G
ON Semiconductor

MOSFET N-CH 60V 60A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock507,108
NTMFS4955NT1G
ON Semiconductor

MOSFET N-CH 30V 48A SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock909,660
NDF10N60ZH
ON Semiconductor

MOSFET N-CH 600V 10A TO-220FP

Package: TO-220-3 Full Pack

Stock36,864
NTGS3446T1G
ON Semiconductor

MOSFET N-CH 20V 2.5A 6TSOP

Package: SOT-23-6

Stock2,052,828
NTGS3441T1G
ON Semiconductor

MOSFET P-CH 20V 1.65A 6-TSOP

Package: SOT-23-6

Stock4,371,276

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTMFS5C682NLT1G	ON Semiconductor	TRENCH 6 60V FET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,008	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVF2955T1G	ON Semiconductor	MOSFET P-CH 60V 2.6A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 492pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 170 mOhm @ 750mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 (TO-261) Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock26,940	MOSFET (Metal Oxide)	60V	2.6A (Ta)	10V	4V @ 1mA	14.3nC @ 10V	492pF @ 25V	±20V	-	1W (Ta)	170 mOhm @ 750mA, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-223 (TO-261)	TO-261-4, TO-261AA
NVMFS5C673NLWFAFT1G	ON Semiconductor	TRENCH 6 60V FET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,624	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVTFS5C658NLTAG	ON Semiconductor	MOSFET N-CH 60V 109A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 109A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1935pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock2,160	MOSFET (Metal Oxide)	60V	109A (Tc)	4.5V, 10V	2.2V @ 250µA	12nC @ 4.5V	1935pF @ 25V	±20V	-	114W (Tc)	5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NVTFS5C454NLWFTAG	ON Semiconductor	TRENCH 6 40V FET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,552	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVMFS5844NLT1G	ON Semiconductor	MOSFET N-CH 60V 11.2A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,120	MOSFET (Metal Oxide)	60V	11.2A (Ta)	4.5V, 10V	2.3V @ 250µA	30nC @ 10V	1460pF @ 25V	±20V	-	3.7W (Ta), 107W (Tc)	12 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVTFS5C466NLWFTAG	ON Semiconductor	MOSFET N-CH 40V 51A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,392	MOSFET (Metal Oxide)	40V	51A (Tc)	4.5V, 10V	2.2V @ 250µA	7nC @ 4.5V	880pF @ 25V	±20V	-	38W (Tc)	7.3 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NDDP010N25AZT4H	ON Semiconductor	MOSFET N-CH 250V 10A TP-FA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 20V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK/TP-FA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,288	MOSFET (Metal Oxide)	250V	10A (Ta)	10V	4.5V @ 1mA	16nC @ 10V	980pF @ 20V	±30V	-	1W (Ta), 52W (Tc)	420 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	DPAK/TP-FA	TO-252-3, DPak (2 Leads + Tab), SC-63
NVTFS5C466NLTAG	ON Semiconductor	MOSFET N-CH 40V 51A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,856	MOSFET (Metal Oxide)	40V	51A (Tc)	4.5V, 10V	2.2V @ 250µA	7nC @ 4.5V	880pF @ 25V	±20V	-	38W (Tc)	7.3 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NVD5C684NLT4G	ON Semiconductor	MOSFET N-CH 60V 38A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,352	MOSFET (Metal Oxide)	60V	38A (Tc)	4.5V, 10V	2.1V @ 250µA	4.6nC @ 4.5V	700pF @ 25V	±20V	-	27W (Tc)	16.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NVTFS5C471NLWFTAG	ON Semiconductor	TRENCH 6 40V FET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,096	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVD5C688NLT4G	ON Semiconductor	MOSFET N-CH 60V 17A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 18W (Tc) Rds On (Max) @ Id, Vgs: 27.4 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,792	MOSFET (Metal Oxide)	60V	17A (Tc)	4.5V, 10V	2.1V @ 250µA	3.4nC @ 4.5V	400pF @ 25V	±16V	-	18W (Tc)	27.4 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTTFS4C02NTAG	ON Semiconductor	TRENCH 6 30V FET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,768	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVTFS5C478NLWFTAG	ON Semiconductor	TRENCH 6 40V FET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,928	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVTFS5826NLTWG	ON Semiconductor	MOSFET N-CH 60V 20A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 22W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,664	MOSFET (Metal Oxide)	60V	7.6A (Ta)	4.5V, 10V	2.5V @ 250µA	16nC @ 10V	850pF @ 25V	±20V	-	3.2W (Ta), 22W (Tc)	24 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NTB60N06T4G	ON Semiconductor	MOSFET N-CH 60V 60A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Rds On (Max) @ Id, Vgs: 14 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock507,108	MOSFET (Metal Oxide)	60V	60A (Ta)	10V	4V @ 250µA	81nC @ 10V	3220pF @ 25V	±20V	-	2.4W (Ta), 150W (Tj)	14 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTMFS4955NT1G	ON Semiconductor	MOSFET N-CH 30V 48A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1264pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 920mW (Ta), 23.2W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock909,660	MOSFET (Metal Oxide)	30V	9.7A (Ta), 48A (Tc)	4.5V, 10V	2.2V @ 250µA	10.8nC @ 4.5V	1264pF @ 15V	±20V	-	920mW (Ta), 23.2W (Tc)	6 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NDF10N60ZH	ON Semiconductor	MOSFET N-CH 600V 10A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1645pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock36,864	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4.5V @ 100µA	68nC @ 10V	1645pF @ 25V	±30V	-	39W (Tc)	750 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
NTGS3446T1G	ON Semiconductor	MOSFET N-CH 20V 2.5A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	Package: SOT-23-6	Stock2,052,828	MOSFET (Metal Oxide)	20V	2.5A (Ta)	2.5V, 4.5V	1.2V @ 250µA	15nC @ 4.5V	750pF @ 10V	±12V	-	500mW (Ta)	45 mOhm @ 5.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6
NTGS3441T1G	ON Semiconductor	MOSFET P-CH 20V 1.65A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.65A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 5V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	Package: SOT-23-6	Stock4,371,276	MOSFET (Metal Oxide)	20V	1.65A (Ta)	2.5V, 4.5V	1.5V @ 250µA	14nC @ 4.5V	480pF @ 5V	±8V	-	500mW (Ta)	90 mOhm @ 3.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6
2SK3747-1E	ON Semiconductor	MOSFET N-CH 1500V 2A TO-3PF-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V Vgs (Max): ±35V FET Feature: - Power Dissipation (Max): 3W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF-3 Package / Case: SC-94	Package: SC-94	Stock3,824	MOSFET (Metal Oxide)	1500V	2A (Ta)	10V	-	37.5nC @ 10V	380pF @ 30V	±35V	-	3W (Ta), 50W (Tc)	13 Ohm @ 1A, 10V	150°C (TJ)	Through Hole	TO-3PF-3	SC-94
MTB50P03HDLT4G	ON Semiconductor	MOSFET P-CH 30V 50A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock508,476	MOSFET (Metal Oxide)	30V	50A (Tc)	5V	2V @ 250µA	100nC @ 5V	4900pF @ 25V	±15V	-	2.5W (Ta), 125W (Tc)	25 mOhm @ 25A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SMP3003-DL-1E	ON Semiconductor	MOSFET P-CH 75V 100A SMP-FD FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock26,928	MOSFET (Metal Oxide)	75V	100A (Ta)	4V, 10V	-	280nC @ 10V	13400pF @ 20V	±20V	-	90W (Tc)	8 mOhm @ 50A, 10V	150°C (TJ)	Surface Mount	D2PAK (TO-263)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NDFPD1N150CG	ON Semiconductor	MOSFET N-CH 1500V 100MA TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 30V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 150 Ohm @ 50mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,576	MOSFET (Metal Oxide)	1500V	100mA (Ta)	10V	-	4.2nC @ 10V	80pF @ 30V	±30V	-	2W (Ta), 20W (Tc)	150 Ohm @ 50mA, 10V	150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack
NDD04N60Z-1G	ON Semiconductor	MOSFET N-CH 600V 4A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock212,544	MOSFET (Metal Oxide)	600V	4.1A (Tc)	10V	4.5V @ 50µA	29nC @ 10V	640pF @ 25V	±30V	-	83W (Tc)	2 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTMFS4897NFT1G	ON Semiconductor	MOSFET N-CH 30V SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 171A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 83.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 950mW (Ta), 96.2W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock7,632	MOSFET (Metal Oxide)	30V	17A (Ta), 171A (Tc)	4.5V, 10V	2.5V @ 1mA	83.6nC @ 10V	5660pF @ 15V	±20V	-	950mW (Ta), 96.2W (Tc)	2 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS5C628NLT1G	ON Semiconductor	MOSFET N-CH 60V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,376	MOSFET (Metal Oxide)	60V	-	4.5V, 10V	2V @ 135µA	52nC @ 10V	3600pF @ 25V	±20V	-	3.7W (Ta), 110W (Tc)	2.4 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVMFS5113PLT1G	ON Semiconductor	MOSFET P-CH 60V 64A SO8FL FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,440	MOSFET (Metal Oxide)	60V	10A (Ta), 64A (Tc)	4.5V, 10V	2.5V @ 250µA	83nC @ 10V	4400pF @ 25V	±20V	-	3.8W (Ta), 150W (Tc)	14 mOhm @ 17A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN