Page 53 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NTD24N06G
ON Semiconductor

MOSFET N-CH 60V 24A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock62,388
NTD24N06-1G
ON Semiconductor

MOSFET N-CH 60V 24A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,832
NTD23N03RG
ON Semiconductor

MOSFET N-CH 25V 3.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,312
NTD23N03R
ON Semiconductor

MOSFET N-CH 25V 3.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,048
NTD20P06LG
ON Semiconductor

MOSFET P-CH 60V 15.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock126,240
NTD20P06L-1G
ON Semiconductor

MOSFET P-CH 60V 15.5A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock60,732
NTD20N06LG
ON Semiconductor

MOSFET N-CH 60V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,272
NTD20N06L-1G
ON Semiconductor

MOSFET N-CH 60V 20A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock60,372
NTD20N06G
ON Semiconductor

MOSFET N-CH 60V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,832
NTD20N06-1G
ON Semiconductor

MOSFET N-CH 60V 20A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,648
NTD20N03L27G
ON Semiconductor

MOSFET N-CH 30V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,024
NTD20N03L27-1G
ON Semiconductor

MOSFET N-CH 30V 20A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock62,772
NTD20N03L27
ON Semiconductor

MOSFET N-CH 30V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,216
NTD18N06LG
ON Semiconductor

MOSFET N-CH 60V 18A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock126,876
NTD18N06L-1G
ON Semiconductor

MOSFET N-CH 60V 18A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,368
NTD18N06L
ON Semiconductor

MOSFET N-CH 60V 18A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock182,400
NTD18N06G
ON Semiconductor

MOSFET N-CH 60V 18A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock122,400
NTD18N06-1G
ON Semiconductor

MOSFET N-CH 60V 18A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,576
NTD18N06
ON Semiconductor

MOSFET N-CH 60V 18A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,408
NTD12N10G
ON Semiconductor

MOSFET N-CH 100V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock62,508

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTD24N06G	ON Semiconductor	MOSFET N-CH 60V 24A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj) Rds On (Max) @ Id, Vgs: 42 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock62,388	MOSFET (Metal Oxide)	60V	24A (Ta)	10V	4V @ 250µA	48nC @ 10V	1200pF @ 25V	±20V	-	1.36W (Ta), 62.5W (Tj)	42 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD24N06-1G	ON Semiconductor	MOSFET N-CH 60V 24A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj) Rds On (Max) @ Id, Vgs: 42 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,832	MOSFET (Metal Oxide)	60V	24A (Ta)	10V	4V @ 250µA	48nC @ 10V	1200pF @ 25V	±20V	-	1.36W (Ta), 62.5W (Tj)	42 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD23N03RG	ON Semiconductor	MOSFET N-CH 25V 3.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 17.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.76nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.14W (Ta), 22.3W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,312	MOSFET (Metal Oxide)	25V	3.8A (Ta), 17.1A (Tc)	4V, 5V	2V @ 250µA	3.76nC @ 4.5V	225pF @ 20V	±20V	-	1.14W (Ta), 22.3W (Tc)	45 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD23N03R	ON Semiconductor	MOSFET N-CH 25V 3.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 17.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.76nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.14W (Ta), 22.3W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,048	MOSFET (Metal Oxide)	25V	3.8A (Ta), 17.1A (Tc)	4V, 5V	2V @ 250µA	3.76nC @ 4.5V	225pF @ 20V	±20V	-	1.14W (Ta), 22.3W (Tc)	45 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD20P06LG	ON Semiconductor	MOSFET P-CH 60V 15.5A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 7.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock126,240	MOSFET (Metal Oxide)	60V	15.5A (Ta)	5V	2V @ 250µA	26nC @ 5V	1190pF @ 25V	±20V	-	65W (Tc)	150 mOhm @ 7.5A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD20P06L-1G	ON Semiconductor	MOSFET P-CH 60V 15.5A IPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 7.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock60,732	MOSFET (Metal Oxide)	60V	15.5A (Ta)	5V	2V @ 250µA	26nC @ 5V	1190pF @ 25V	±20V	-	65W (Tc)	150 mOhm @ 7.5A, 5V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD20N06LG	ON Semiconductor	MOSFET N-CH 60V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.36W (Ta), 60W (Tj) Rds On (Max) @ Id, Vgs: 48 mOhm @ 10A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,272	MOSFET (Metal Oxide)	60V	20A (Ta)	5V	2V @ 250µA	32nC @ 5V	990pF @ 25V	±15V	-	1.36W (Ta), 60W (Tj)	48 mOhm @ 10A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD20N06L-1G	ON Semiconductor	MOSFET N-CH 60V 20A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.36W (Ta), 60W (Tj) Rds On (Max) @ Id, Vgs: 48 mOhm @ 10A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock60,372	MOSFET (Metal Oxide)	60V	20A (Ta)	5V	2V @ 250µA	32nC @ 5V	990pF @ 25V	±15V	-	1.36W (Ta), 60W (Tj)	48 mOhm @ 10A, 5V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD20N06G	ON Semiconductor	MOSFET N-CH 60V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.88W (Ta), 60W (Tj) Rds On (Max) @ Id, Vgs: 46 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,832	MOSFET (Metal Oxide)	60V	20A (Ta)	10V	4V @ 250µA	30nC @ 10V	1015pF @ 25V	±20V	-	1.88W (Ta), 60W (Tj)	46 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD20N06-1G	ON Semiconductor	MOSFET N-CH 60V 20A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.88W (Ta), 60W (Tj) Rds On (Max) @ Id, Vgs: 46 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,648	MOSFET (Metal Oxide)	60V	20A (Ta)	10V	4V @ 250µA	30nC @ 10V	1015pF @ 25V	±20V	-	1.88W (Ta), 60W (Tj)	46 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD20N03L27G	ON Semiconductor	MOSFET N-CH 30V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.75W (Ta), 74W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 10A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,024	MOSFET (Metal Oxide)	30V	20A (Ta)	4V, 5V	2V @ 250µA	18.9nC @ 10V	1260pF @ 25V	±20V	-	1.75W (Ta), 74W (Tc)	27 mOhm @ 10A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD20N03L27-1G	ON Semiconductor	MOSFET N-CH 30V 20A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.75W (Ta), 74W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 10A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock62,772	MOSFET (Metal Oxide)	30V	20A (Ta)	4V, 5V	2V @ 250µA	18.9nC @ 10V	1260pF @ 25V	±20V	-	1.75W (Ta), 74W (Tc)	27 mOhm @ 10A, 5V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD20N03L27	ON Semiconductor	MOSFET N-CH 30V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.75W (Ta), 74W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 10A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,216	MOSFET (Metal Oxide)	30V	20A (Ta)	4V, 5V	2V @ 250µA	18.9nC @ 10V	1260pF @ 25V	±20V	-	1.75W (Ta), 74W (Tc)	27 mOhm @ 10A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD18N06LG	ON Semiconductor	MOSFET N-CH 60V 18A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 55W (Tj) Rds On (Max) @ Id, Vgs: 65 mOhm @ 9A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock126,876	MOSFET (Metal Oxide)	60V	18A (Ta)	5V	2V @ 250µA	22nC @ 5V	675pF @ 25V	±15V	-	2.1W (Ta), 55W (Tj)	65 mOhm @ 9A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD18N06L-1G	ON Semiconductor	MOSFET N-CH 60V 18A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 55W (Tj) Rds On (Max) @ Id, Vgs: 65 mOhm @ 9A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,368	MOSFET (Metal Oxide)	60V	18A (Ta)	5V	2V @ 250µA	22nC @ 5V	675pF @ 25V	±15V	-	2.1W (Ta), 55W (Tj)	65 mOhm @ 9A, 5V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD18N06L	ON Semiconductor	MOSFET N-CH 60V 18A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 55W (Tj) Rds On (Max) @ Id, Vgs: 65 mOhm @ 9A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock182,400	MOSFET (Metal Oxide)	60V	18A (Ta)	5V	2V @ 250µA	22nC @ 5V	675pF @ 25V	±15V	-	2.1W (Ta), 55W (Tj)	65 mOhm @ 9A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD18N06G	ON Semiconductor	MOSFET N-CH 60V 18A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 55W (Tj) Rds On (Max) @ Id, Vgs: 60 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock122,400	MOSFET (Metal Oxide)	60V	18A (Ta)	10V	4V @ 250µA	30nC @ 10V	710pF @ 25V	±20V	-	2.1W (Ta), 55W (Tj)	60 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD18N06-1G	ON Semiconductor	MOSFET N-CH 60V 18A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 55W (Tj) Rds On (Max) @ Id, Vgs: 60 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,576	MOSFET (Metal Oxide)	60V	18A (Ta)	10V	4V @ 250µA	30nC @ 10V	710pF @ 25V	±20V	-	2.1W (Ta), 55W (Tj)	60 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD18N06	ON Semiconductor	MOSFET N-CH 60V 18A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 55W (Tj) Rds On (Max) @ Id, Vgs: 60 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,408	MOSFET (Metal Oxide)	60V	18A (Ta)	10V	4V @ 250µA	30nC @ 10V	710pF @ 25V	±20V	-	2.1W (Ta), 55W (Tj)	60 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD12N10G	ON Semiconductor	MOSFET N-CH 100V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock62,508	MOSFET (Metal Oxide)	100V	12A (Ta)	10V	4V @ 250µA	20nC @ 10V	550pF @ 25V	±20V	-	1.28W (Ta), 56.6W (Tc)	165 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD12N10-1G	ON Semiconductor	MOSFET N-CH 100V 12A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock39,564	MOSFET (Metal Oxide)	100V	12A (Ta)	10V	4V @ 250µA	20nC @ 10V	550pF @ 25V	±20V	-	1.28W (Ta), 56.6W (Tc)	165 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD110N02RG	ON Semiconductor	MOSFET N-CH 24V 12.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,504	MOSFET (Metal Oxide)	24V	12.5A (Ta), 110A (Tc)	4.5V, 10V	2V @ 250µA	28nC @ 4.5V	3440pF @ 20V	±20V	-	1.5W (Ta), 110W (Tc)	4.6 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD110N02R-001G	ON Semiconductor	MOSFET N-CH 24V 12.5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock71,640	MOSFET (Metal Oxide)	24V	12.5A (Ta), 110A (Tc)	4.5V, 10V	2V @ 250µA	28nC @ 4.5V	3440pF @ 20V	±20V	-	1.5W (Ta), 110W (Tc)	4.6 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD110N02R	ON Semiconductor	MOSFET N-CH 24V 12.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock52,740	MOSFET (Metal Oxide)	24V	12.5A (Ta), 110A (Tc)	4.5V, 10V	2V @ 250µA	28nC @ 4.5V	3440pF @ 20V	±20V	-	1.5W (Ta), 110W (Tc)	4.6 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTB90N02G	ON Semiconductor	MOSFET N-CH 24V 90A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2120pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,752	MOSFET (Metal Oxide)	24V	90A (Ta)	4.5V, 10V	3V @ 250µA	29nC @ 4.5V	2120pF @ 20V	±20V	-	85W (Tc)	5.8 mOhm @ 90A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB90N02	ON Semiconductor	MOSFET N-CH 24V 90A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2120pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock17,400	MOSFET (Metal Oxide)	24V	90A (Ta)	4.5V, 10V	3V @ 250µA	29nC @ 4.5V	2120pF @ 20V	±20V	-	85W (Tc)	5.8 mOhm @ 90A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB85N03G	ON Semiconductor	MOSFET N-CH 28V 85A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 28V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,280	MOSFET (Metal Oxide)	28V	85A (Tc)	4.5V, 10V	3V @ 250µA	29nC @ 4.5V	2150pF @ 24V	±20V	-	80W (Tc)	6.8 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB85N03	ON Semiconductor	MOSFET N-CH 28V 85A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 28V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,376	MOSFET (Metal Oxide)	28V	85A (Tc)	4.5V, 10V	3V @ 250µA	29nC @ 4.5V	2150pF @ 24V	±20V	-	80W (Tc)	6.8 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB