Page 55 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NTD6600N
ON Semiconductor

MOSFET N-CH 100V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock16,980
NTD65N03RT4G
ON Semiconductor

MOSFET N-CH 25V 9.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock30,036
NTD65N03RT4
ON Semiconductor

MOSFET N-CH 25V 9.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,056
NTD65N03RG
ON Semiconductor

MOSFET N-CH 25V 9.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock61,404
NTD65N03R-1G
ON Semiconductor

MOSFET N-CH 25V 9.5A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,864
NTD65N03R-035
ON Semiconductor

MOSFET N-CH 25V 9.5A IPAK

Package: TO-251-3 Stub Leads, IPak

Stock5,360
NTD65N03R-001
ON Semiconductor

MOSFET N-CH 25V 9.5A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock17,100
NTD65N03R
ON Semiconductor

MOSFET N-CH 25V 9.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,888
NTD60N02RG
ON Semiconductor

MOSFET N-CH 25V 8.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock101,520
NTD60N02R-35G
ON Semiconductor

MOSFET N-CH 25V 8.5A IPAK

Package: TO-251-3 Stub Leads, IPak

Stock6,416
NTD60N02R-1G
ON Semiconductor

MOSFET N-CH 25V 8.5A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock112,860
NTD60N02R-035
ON Semiconductor

MOSFET N-CH 25V 8.5A IPAK

Package: TO-251-3 Stub Leads, IPak

Stock57,600
NTD60N02R
ON Semiconductor

MOSFET N-CH 25V 8.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock152,868
NTD5406NT4G
ON Semiconductor

MOSFET N-CH 40V 70A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock732,228
NTD5406NG
ON Semiconductor

MOSFET N-CH 40V 70A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock180,180
NTD50N03RT4G
ON Semiconductor

MOSFET N-CH 25V 7.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock392,580
NTD50N03RT4
ON Semiconductor

MOSFET N-CH 25V 7.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,864
NTD50N03RG
ON Semiconductor

MOSFET N-CH 25V 7.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock167,004
NTD50N03R-35G
ON Semiconductor

MOSFET N-CH 25V 7.8A IPAK

Package: TO-251-3 Stub Leads, IPak

Stock60,252
NTD50N03R-1G
ON Semiconductor

MOSFET N-CH 25V 7.8A IPAK

Package: TO-251-3 Stub Leads, IPak

Stock15,264

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTD6600N	ON Semiconductor	MOSFET N-CH 100V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc) Rds On (Max) @ Id, Vgs: 146 mOhm @ 6A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock16,980	MOSFET (Metal Oxide)	100V	12A (Ta)	5V	2V @ 250µA	20nC @ 5V	700pF @ 25V	±20V	-	1.28W (Ta), 56.6W (Tc)	146 mOhm @ 6A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD65N03RT4G	ON Semiconductor	MOSFET N-CH 25V 9.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock30,036	MOSFET (Metal Oxide)	25V	9.5A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	16nC @ 5V	1400pF @ 20V	±20V	-	1.3W (Ta), 50W (Tc)	8.4 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD65N03RT4	ON Semiconductor	MOSFET N-CH 25V 9.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,056	MOSFET (Metal Oxide)	25V	9.5A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	16nC @ 5V	1400pF @ 20V	±20V	-	1.3W (Ta), 50W (Tc)	8.4 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD65N03RG	ON Semiconductor	MOSFET N-CH 25V 9.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock61,404	MOSFET (Metal Oxide)	25V	9.5A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	16nC @ 5V	1400pF @ 20V	±20V	-	1.3W (Ta), 50W (Tc)	8.4 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD65N03R-1G	ON Semiconductor	MOSFET N-CH 25V 9.5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,864	MOSFET (Metal Oxide)	25V	9.5A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	16nC @ 5V	1400pF @ 20V	±20V	-	1.3W (Ta), 50W (Tc)	8.4 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD65N03R-035	ON Semiconductor	MOSFET N-CH 25V 9.5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock5,360	MOSFET (Metal Oxide)	25V	9.5A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	16nC @ 5V	1400pF @ 20V	±20V	-	1.3W (Ta), 50W (Tc)	8.4 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
NTD65N03R-001	ON Semiconductor	MOSFET N-CH 25V 9.5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock17,100	MOSFET (Metal Oxide)	25V	9.5A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	16nC @ 5V	1400pF @ 20V	±20V	-	1.3W (Ta), 50W (Tc)	8.4 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD65N03R	ON Semiconductor	MOSFET N-CH 25V 9.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,888	MOSFET (Metal Oxide)	25V	9.5A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	16nC @ 5V	1400pF @ 20V	±20V	-	1.3W (Ta), 50W (Tc)	8.4 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD60N02RG	ON Semiconductor	MOSFET N-CH 25V 8.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 58W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock101,520	MOSFET (Metal Oxide)	25V	8.5A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	14nC @ 4.5V	1330pF @ 20V	±20V	-	1.25W (Ta), 58W (Tc)	10.5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD60N02R-35G	ON Semiconductor	MOSFET N-CH 25V 8.5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 58W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock6,416	MOSFET (Metal Oxide)	25V	8.5A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	14nC @ 4.5V	1330pF @ 20V	±20V	-	1.25W (Ta), 58W (Tc)	10.5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
NTD60N02R-1G	ON Semiconductor	MOSFET N-CH 25V 8.5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 58W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock112,860	MOSFET (Metal Oxide)	25V	8.5A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	14nC @ 4.5V	1330pF @ 20V	±20V	-	1.25W (Ta), 58W (Tc)	10.5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD60N02R-035	ON Semiconductor	MOSFET N-CH 25V 8.5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 58W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock57,600	MOSFET (Metal Oxide)	25V	8.5A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	14nC @ 4.5V	1330pF @ 20V	±20V	-	1.25W (Ta), 58W (Tc)	10.5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
NTD60N02R	ON Semiconductor	MOSFET N-CH 25V 8.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 58W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock152,868	MOSFET (Metal Oxide)	25V	8.5A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	14nC @ 4.5V	1330pF @ 20V	±20V	-	1.25W (Ta), 58W (Tc)	10.5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD5406NT4G	ON Semiconductor	MOSFET N-CH 40V 70A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 32V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock732,228	MOSFET (Metal Oxide)	40V	12.2A (Ta), 70A (Tc)	5V, 10V	3.5V @ 250µA	45nC @ 10V	2500pF @ 32V	±20V	-	3W (Ta), 100W (Tc)	10 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD5406NG	ON Semiconductor	MOSFET N-CH 40V 70A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 32V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock180,180	MOSFET (Metal Oxide)	40V	12.2A (Ta), 70A (Tc)	5V, 10V	3.5V @ 250µA	45nC @ 10V	2500pF @ 32V	±20V	-	3W (Ta), 100W (Tc)	10 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD50N03RT4G	ON Semiconductor	MOSFET N-CH 25V 7.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock392,580	MOSFET (Metal Oxide)	25V	7.8A (Ta), 45A (Tc)	4.5V, 11.5V	2V @ 250µA	15nC @ 11.5V	750pF @ 12V	±20V	-	1.5W (Ta), 50W (Tc)	12 mOhm @ 30A, 11.5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD50N03RT4	ON Semiconductor	MOSFET N-CH 25V 7.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,864	MOSFET (Metal Oxide)	25V	7.8A (Ta), 45A (Tc)	4.5V, 11.5V	2V @ 250µA	15nC @ 11.5V	750pF @ 12V	±20V	-	1.5W (Ta), 50W (Tc)	12 mOhm @ 30A, 11.5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD50N03RG	ON Semiconductor	MOSFET N-CH 25V 7.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock167,004	MOSFET (Metal Oxide)	25V	7.8A (Ta), 45A (Tc)	4.5V, 11.5V	2V @ 250µA	15nC @ 11.5V	750pF @ 12V	±20V	-	1.5W (Ta), 50W (Tc)	12 mOhm @ 30A, 11.5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD50N03R-35G	ON Semiconductor	MOSFET N-CH 25V 7.8A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock60,252	MOSFET (Metal Oxide)	25V	7.8A (Ta), 45A (Tc)	4.5V, 11.5V	2V @ 250µA	15nC @ 11.5V	750pF @ 12V	±20V	-	1.5W (Ta), 50W (Tc)	12 mOhm @ 30A, 11.5V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
NTD50N03R-1G	ON Semiconductor	MOSFET N-CH 25V 7.8A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock15,264	MOSFET (Metal Oxide)	25V	7.8A (Ta), 45A (Tc)	4.5V, 11.5V	2V @ 250µA	15nC @ 11.5V	750pF @ 12V	±20V	-	1.5W (Ta), 50W (Tc)	12 mOhm @ 30A, 11.5V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
NTD50N03R-035	ON Semiconductor	MOSFET N-CH 25V 7.8A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock46,800	MOSFET (Metal Oxide)	25V	7.8A (Ta), 45A (Tc)	4.5V, 11.5V	2V @ 250µA	15nC @ 11.5V	750pF @ 12V	±20V	-	1.5W (Ta), 50W (Tc)	12 mOhm @ 30A, 11.5V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
NTD50N03R-001	ON Semiconductor	MOSFET N-CH 25V 7.8A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock2,944	MOSFET (Metal Oxide)	25V	7.8A (Ta), 45A (Tc)	4.5V, 11.5V	2V @ 250µA	15nC @ 11.5V	750pF @ 12V	±20V	-	1.5W (Ta), 50W (Tc)	12 mOhm @ 30A, 11.5V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
NTD50N03R	ON Semiconductor	MOSFET N-CH 25V 7.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,152	MOSFET (Metal Oxide)	25V	7.8A (Ta), 45A (Tc)	4.5V, 11.5V	2V @ 250µA	15nC @ 11.5V	750pF @ 12V	±20V	-	1.5W (Ta), 50W (Tc)	12 mOhm @ 30A, 11.5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4815NT4G	ON Semiconductor	MOSFET N-CH 30V 6.9A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock441,324	MOSFET (Metal Oxide)	30V	6.9A (Ta), 35A (Tc)	4.5V, 11.5V	2.5V @ 250µA	6.6nC @ 4.5V	770pF @ 12V	±20V	-	1.26W (Ta), 32.6W (Tc)	15 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4815N-1G	ON Semiconductor	MOSFET N-CH 30V 6.9A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock62,868	MOSFET (Metal Oxide)	30V	6.9A (Ta), 35A (Tc)	4.5V, 11.5V	2.5V @ 250µA	6.6nC @ 4.5V	770pF @ 12V	±20V	-	1.26W (Ta), 32.6W (Tc)	15 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
NTD4813NT4G	ON Semiconductor	MOSFET N-CH 30V 7.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.27W (Ta), 35.3W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock367,284	MOSFET (Metal Oxide)	30V	7.6A (Ta), 40A (Tc)	4.5V, 11.5V	2.5V @ 250µA	7.9nC @ 4.5V	860pF @ 12V	±20V	-	1.27W (Ta), 35.3W (Tc)	13 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4810N-35G	ON Semiconductor	MOSFET N-CH 30V 8.6A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock180,000	MOSFET (Metal Oxide)	30V	9A (Ta), 54A (Tc)	4.5V, 11.5V	2.5V @ 250µA	11nC @ 4.5V	1350pF @ 12V	±20V	-	1.4W (Ta), 50W (Tc)	10 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
NTD4810N-1G	ON Semiconductor	MOSFET N-CH 30V 8.6A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock248,136	MOSFET (Metal Oxide)	30V	9A (Ta), 54A (Tc)	4.5V, 11.5V	2.5V @ 250µA	11nC @ 4.5V	1350pF @ 12V	±20V	-	1.4W (Ta), 50W (Tc)	10 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA