Page 56 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NTHD3101FT3
ON Semiconductor

MOSFET P-CH 20V 3.2A CHIPFET

Package: 8-SMD, Flat Lead

Stock3,472
NTGS4111PT1
ON Semiconductor

MOSFET P-CH 30V 2.6A 6-TSOP

Package: SOT-23-6

Stock7,744
NTF3055L175T3G
ON Semiconductor

MOSFET N-CH 60V 2A SOT223

Package: TO-261-4, TO-261AA

Stock123,528
NTF3055L175T3
ON Semiconductor

MOSFET N-CH 60V 2A SOT223

Package: TO-261-4, TO-261AA

Stock5,296
NTF3055-100T3G
ON Semiconductor

MOSFET N-CH 60V 3A SOT223

Package: TO-261-4, TO-261AA

Stock124,032
NTD95N02RT4G
ON Semiconductor

MOSFET N-CH 24V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock60,252
NTD95N02RT4
ON Semiconductor

MOSFET N-CH 24V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,712
NTD95N02RG
ON Semiconductor

MOSFET N-CH 24V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock61,020
NTD95N02R-1G
ON Semiconductor

MOSFET N-CH 24V 12A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,640
NTD95N02R-001
ON Semiconductor

MOSFET N-CH 24V 12A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,224
NTD95N02R
ON Semiconductor

MOSFET N-CH 24V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,408
NTD85N02RG
ON Semiconductor

MOSFET N-CH 24V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,104
NTD85N02R-1G
ON Semiconductor

MOSFET N-CH 24V 12A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock41,400
NTD85N02R
ON Semiconductor

MOSFET N-CH 24V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock180,024
NTD80N02G
ON Semiconductor

MOSFET N-CH 24V 80A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock305,400
NTD80N02
ON Semiconductor

MOSFET N-CH 24V 80A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock188,436
NTD78N03T4
ON Semiconductor

MOSFET N-CH 25V 11.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock82,248
NTD78N03G
ON Semiconductor

MOSFET N-CH 25V 11.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock17,016
NTD78N03-35G
ON Semiconductor

MOSFET N-CH 25V 11.4A IPAK

Package: TO-251-3 Stub Leads, IPak

Stock13,164
NTD78N03-1G
ON Semiconductor

MOSFET N-CH 25V 11.4A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock5,392

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTHD3101FT3	ON Semiconductor	MOSFET P-CH 20V 3.2A CHIPFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tj) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 10V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock3,472	MOSFET (Metal Oxide)	20V	3.2A (Tj)	1.8V, 4.5V	1.5V @ 250µA	7.4nC @ 4.5V	680pF @ 10V	±8V	Schottky Diode (Isolated)	1.1W (Ta)	80 mOhm @ 3.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	ChipFET?	8-SMD, Flat Lead
NTGS4111PT1	ON Semiconductor	MOSFET P-CH 30V 2.6A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 630mW (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	Package: SOT-23-6	Stock7,744	MOSFET (Metal Oxide)	30V	2.6A (Ta)	4.5V, 10V	3V @ 250µA	32nC @ 10V	750pF @ 15V	±20V	-	630mW (Ta)	60 mOhm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6
NTF3055L175T3G	ON Semiconductor	MOSFET N-CH 60V 2A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 175 mOhm @ 1A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 (TO-261) Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock123,528	MOSFET (Metal Oxide)	60V	2A (Ta)	5V	2V @ 250µA	10nC @ 5V	270pF @ 25V	±15V	-	1.3W (Ta)	175 mOhm @ 1A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-223 (TO-261)	TO-261-4, TO-261AA
NTF3055L175T3	ON Semiconductor	MOSFET N-CH 60V 2A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 175 mOhm @ 1A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 (TO-261) Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock5,296	MOSFET (Metal Oxide)	60V	2A (Ta)	5V	2V @ 250µA	10nC @ 5V	270pF @ 25V	±15V	-	1.3W (Ta)	175 mOhm @ 1A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-223 (TO-261)	TO-261-4, TO-261AA
NTF3055-100T3G	ON Semiconductor	MOSFET N-CH 60V 3A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock124,032	MOSFET (Metal Oxide)	60V	3A (Ta)	10V	4V @ 250µA	22nC @ 10V	455pF @ 25V	±20V	-	1.3W (Ta)	110 mOhm @ 1.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
NTD95N02RT4G	ON Semiconductor	MOSFET N-CH 24V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 86W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock60,252	MOSFET (Metal Oxide)	24V	12A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	21nC @ 4.5V	2400pF @ 20V	±20V	-	1.25W (Ta), 86W (Tc)	5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD95N02RT4	ON Semiconductor	MOSFET N-CH 24V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 86W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,712	MOSFET (Metal Oxide)	24V	12A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	21nC @ 4.5V	2400pF @ 20V	±20V	-	1.25W (Ta), 86W (Tc)	5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD95N02RG	ON Semiconductor	MOSFET N-CH 24V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 86W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock61,020	MOSFET (Metal Oxide)	24V	12A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	21nC @ 4.5V	2400pF @ 20V	±20V	-	1.25W (Ta), 86W (Tc)	5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD95N02R-1G	ON Semiconductor	MOSFET N-CH 24V 12A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 86W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,640	MOSFET (Metal Oxide)	24V	12A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	21nC @ 4.5V	2400pF @ 20V	±20V	-	1.25W (Ta), 86W (Tc)	5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD95N02R-001	ON Semiconductor	MOSFET N-CH 24V 12A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 86W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,224	MOSFET (Metal Oxide)	24V	12A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	21nC @ 4.5V	2400pF @ 20V	±20V	-	1.25W (Ta), 86W (Tc)	5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD95N02R	ON Semiconductor	MOSFET N-CH 24V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 86W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,408	MOSFET (Metal Oxide)	24V	12A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	21nC @ 4.5V	2400pF @ 20V	±20V	-	1.25W (Ta), 86W (Tc)	5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD85N02RG	ON Semiconductor	MOSFET N-CH 24V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,104	MOSFET (Metal Oxide)	24V	12A (Ta), 85A (Tc)	4.5V, 10V	2V @ 250µA	17.7nC @ 5V	2050pF @ 20V	±20V	-	1.25W (Ta), 78.1W (Tc)	5.2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD85N02R-1G	ON Semiconductor	MOSFET N-CH 24V 12A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock41,400	MOSFET (Metal Oxide)	24V	12A (Ta), 85A (Tc)	4.5V, 10V	2V @ 250µA	17.7nC @ 5V	2050pF @ 20V	±20V	-	1.25W (Ta), 78.1W (Tc)	5.2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD85N02R	ON Semiconductor	MOSFET N-CH 24V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock180,024	MOSFET (Metal Oxide)	24V	12A (Ta), 85A (Tc)	4.5V, 10V	2V @ 250µA	17.7nC @ 5V	2050pF @ 20V	±20V	-	1.25W (Ta), 78.1W (Tc)	5.2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD80N02G	ON Semiconductor	MOSFET N-CH 24V 80A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock305,400	MOSFET (Metal Oxide)	24V	80A (Tc)	4.5V, 10V	3V @ 250µA	42nC @ 4.5V	2600pF @ 20V	±20V	-	75W (Tc)	5.8 mOhm @ 80A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD80N02	ON Semiconductor	MOSFET N-CH 24V 80A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock188,436	MOSFET (Metal Oxide)	24V	80A (Tc)	4.5V, 10V	3V @ 250µA	42nC @ 4.5V	2600pF @ 20V	±20V	-	75W (Tc)	5.8 mOhm @ 80A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD78N03T4	ON Semiconductor	MOSFET N-CH 25V 11.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta), 64W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 78A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock82,248	MOSFET (Metal Oxide)	25V	11.4A (Ta), 78A (Tc)	4.5V, 10V	3V @ 250µA	35nC @ 4.5V	2250pF @ 12V	±20V	-	1.4W (Ta), 64W (Tc)	6 mOhm @ 78A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD78N03G	ON Semiconductor	MOSFET N-CH 25V 11.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta), 64W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 78A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock17,016	MOSFET (Metal Oxide)	25V	11.4A (Ta), 78A (Tc)	4.5V, 10V	3V @ 250µA	35nC @ 4.5V	2250pF @ 12V	±20V	-	1.4W (Ta), 64W (Tc)	6 mOhm @ 78A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD78N03-35G	ON Semiconductor	MOSFET N-CH 25V 11.4A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta), 64W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 78A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock13,164	MOSFET (Metal Oxide)	25V	11.4A (Ta), 78A (Tc)	4.5V, 10V	3V @ 250µA	35nC @ 4.5V	2250pF @ 12V	±20V	-	1.4W (Ta), 64W (Tc)	6 mOhm @ 78A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
NTD78N03-1G	ON Semiconductor	MOSFET N-CH 25V 11.4A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta), 64W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 78A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,392	MOSFET (Metal Oxide)	25V	11.4A (Ta), 78A (Tc)	4.5V, 10V	3V @ 250µA	35nC @ 4.5V	2250pF @ 12V	±20V	-	1.4W (Ta), 64W (Tc)	6 mOhm @ 78A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD78N03-035	ON Semiconductor	MOSFET N-CH 25V 11.4A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta), 64W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 78A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock4,144	MOSFET (Metal Oxide)	25V	11.4A (Ta), 78A (Tc)	4.5V, 10V	3V @ 250µA	35nC @ 4.5V	2250pF @ 12V	±20V	-	1.4W (Ta), 64W (Tc)	6 mOhm @ 78A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
NTD78N03-001	ON Semiconductor	MOSFET N-CH 25V 11.4A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta), 64W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 78A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,888	MOSFET (Metal Oxide)	25V	11.4A (Ta), 78A (Tc)	4.5V, 10V	3V @ 250µA	35nC @ 4.5V	2250pF @ 12V	±20V	-	1.4W (Ta), 64W (Tc)	6 mOhm @ 78A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD78N03	ON Semiconductor	MOSFET N-CH 25V 11.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta), 64W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 78A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,448	MOSFET (Metal Oxide)	25V	11.4A (Ta), 78A (Tc)	4.5V, 10V	3V @ 250µA	35nC @ 4.5V	2250pF @ 12V	±20V	-	1.4W (Ta), 64W (Tc)	6 mOhm @ 78A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD70N03RG	ON Semiconductor	MOSFET N-CH 25V 10A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.36W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock10,452	MOSFET (Metal Oxide)	25V	10A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	13.2nC @ 5V	1333pF @ 20V	±20V	-	1.36W (Ta), 62.5W (Tc)	8 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD70N03R	ON Semiconductor	MOSFET N-CH 25V 10A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.36W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,968	MOSFET (Metal Oxide)	25V	10A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	13.2nC @ 5V	1333pF @ 20V	±20V	-	1.36W (Ta), 62.5W (Tc)	8 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD6600NT4G	ON Semiconductor	MOSFET N-CH 100V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc) Rds On (Max) @ Id, Vgs: 146 mOhm @ 6A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock721,956	MOSFET (Metal Oxide)	100V	12A (Ta)	5V	2V @ 250µA	20nC @ 5V	700pF @ 25V	±20V	-	1.28W (Ta), 56.6W (Tc)	146 mOhm @ 6A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD6600NT4	ON Semiconductor	MOSFET N-CH 100V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc) Rds On (Max) @ Id, Vgs: 146 mOhm @ 6A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock26,400	MOSFET (Metal Oxide)	100V	12A (Ta)	5V	2V @ 250µA	20nC @ 5V	700pF @ 25V	±20V	-	1.28W (Ta), 56.6W (Tc)	146 mOhm @ 6A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD6600N-001	ON Semiconductor	MOSFET N-CH 100V 12A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc) Rds On (Max) @ Id, Vgs: 146 mOhm @ 6A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,232	MOSFET (Metal Oxide)	100V	12A (Ta)	5V	2V @ 250µA	20nC @ 5V	700pF @ 25V	±20V	-	1.28W (Ta), 56.6W (Tc)	146 mOhm @ 6A, 5V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA