Page 57 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NTMS4706NR2G
ON Semiconductor

MOSFET N-CH 30V 6.4A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock705,600
NTMS4706NR2
ON Semiconductor

MOSFET N-CH 30V 6.4A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock30,024
NTMFS4708NT3G
ON Semiconductor

MOSFET N-CH 30V 7.8A SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock3,088
NTMFS4708NT1G
ON Semiconductor

MOSFET N-CH 30V 7.8A SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock362,400
NTMFS4707NT3G
ON Semiconductor

MOSFET N-CH 30V 6.9A SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock84,000
NTMFS4707NT1G
ON Semiconductor

MOSFET N-CH 30V 6.9A SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock57,384
NTMFS4701NT3G
ON Semiconductor

MOSFET N-CH 30V 7.7A SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock2,832
NTMFS4701NT1G
ON Semiconductor

MOSFET N-CH 30V 7.7A SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock186,192
NTMFS4122NT3G
ON Semiconductor

MOSFET N-CH 30V 9.1A SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock7,968
NTMFS4121NT3G
ON Semiconductor

MOSFET N-CH 30V 11A SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock5,424
NTMFS4120NT3G
ON Semiconductor

MOSFET N-CH 30V 11A SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock3,248
NTMFS4119NT3G
ON Semiconductor

MOSFET N-CH 30V 11A SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock48,000
NTMFS4108NT3G
ON Semiconductor

MOSFET N-CH 30V 13.5A SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock60,000
NTLJS4159NT1G
ON Semiconductor

MOSFET N-CH 30V 3.6A 6-WFDN

Package: 6-WDFN Exposed Pad

Stock5,120
NTLGF3501NT1G
ON Semiconductor

MOSFET N-CH 20V 2.8A 6-DFN

Package: 6-VDFN Exposed Pad

Stock5,936
NTLGF3402PT1G
ON Semiconductor

MOSFET P-CH 20V 2.3A 6-DFN

Package: 6-VDFN Exposed Pad

Stock3,264
NTJS4405NT4G
ON Semiconductor

MOSFET N-CH 25V 1A SOT-363

Package: 6-TSSOP, SC-88, SOT-363

Stock59,976
NTJS4405NT4
ON Semiconductor

MOSFET N-CH 25V 1A SOT-363

Package: 6-TSSOP, SC-88, SOT-363

Stock6,256
NTJS4405NT1
ON Semiconductor

MOSFET N-CH 25V 1A SOT-363

Package: 6-TSSOP, SC-88, SOT-363

Stock6,896
NTJS3157NT4G
ON Semiconductor

MOSFET N-CH 20V 3.2A SOT-363

Package: 6-TSSOP, SC-88, SOT-363

Stock3,376

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTMS4706NR2G	ON Semiconductor	MOSFET N-CH 30V 6.4A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 10.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock705,600	MOSFET (Metal Oxide)	30V	6.4A (Ta)	4.5V, 10V	2.5V @ 250µA	15nC @ 4.5V	950pF @ 24V	±20V	-	830mW (Ta)	12 mOhm @ 10.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NTMS4706NR2	ON Semiconductor	MOSFET N-CH 30V 6.4A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 10.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock30,024	MOSFET (Metal Oxide)	30V	6.4A (Ta)	4.5V, 10V	2.5V @ 250µA	15nC @ 4.5V	950pF @ 24V	±20V	-	830mW (Ta)	12 mOhm @ 10.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NTMFS4708NT3G	ON Semiconductor	MOSFET N-CH 30V 7.8A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock3,088	MOSFET (Metal Oxide)	30V	7.8A (Ta)	4.5V, 10V	2.5V @ 250µA	15nC @ 4.5V	970pF @ 24V	±20V	-	1W (Ta)	10 mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4708NT1G	ON Semiconductor	MOSFET N-CH 30V 7.8A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock362,400	MOSFET (Metal Oxide)	30V	7.8A (Ta)	4.5V, 10V	2.5V @ 250µA	15nC @ 4.5V	970pF @ 24V	±20V	-	1W (Ta)	10 mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4707NT3G	ON Semiconductor	MOSFET N-CH 30V 6.9A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock84,000	MOSFET (Metal Oxide)	30V	6.9A (Ta)	4.5V, 10V	2.5V @ 250µA	15nC @ 4.5V	735pF @ 24V	±20V	-	1W (Ta)	13 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4707NT1G	ON Semiconductor	MOSFET N-CH 30V 6.9A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock57,384	MOSFET (Metal Oxide)	30V	6.9A (Ta)	4.5V, 10V	2.5V @ 250µA	15nC @ 4.5V	735pF @ 24V	±20V	-	1W (Ta)	13 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4701NT3G	ON Semiconductor	MOSFET N-CH 30V 7.7A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock2,832	MOSFET (Metal Oxide)	30V	7.7A (Ta)	4.5V, 10V	3V @ 250µA	15nC @ 4.5V	1280pF @ 24V	±20V	-	900mW (Ta)	8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4701NT1G	ON Semiconductor	MOSFET N-CH 30V 7.7A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock186,192	MOSFET (Metal Oxide)	30V	7.7A (Ta)	4.5V, 10V	3V @ 250µA	15nC @ 4.5V	1280pF @ 24V	±20V	-	900mW (Ta)	8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4122NT3G	ON Semiconductor	MOSFET N-CH 30V 9.1A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 6 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock7,968	MOSFET (Metal Oxide)	30V	9.1A (Ta)	4.5V, 10V	2.5V @ 250µA	30nC @ 4.5V	2310pF @ 24V	±20V	-	900mW (Ta)	6 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4121NT3G	ON Semiconductor	MOSFET N-CH 30V 11A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 5.25 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock5,424	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	2.5V @ 250µA	40nC @ 4.5V	2700pF @ 24V	±20V	-	900mW (Ta)	5.25 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4120NT3G	ON Semiconductor	MOSFET N-CH 30V 11A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock3,248	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	2.5V @ 250µA	50nC @ 4.5V	3600pF @ 24V	±20V	-	900mW (Ta)	4.5 mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4119NT3G	ON Semiconductor	MOSFET N-CH 30V 11A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 29A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock48,000	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	2.5V @ 250µA	60nC @ 4.5V	4800pF @ 24V	±20V	-	900mW (Ta)	3.5 mOhm @ 29A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMFS4108NT3G	ON Semiconductor	MOSFET N-CH 30V 13.5A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta), 96.2W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock60,000	MOSFET (Metal Oxide)	30V	13.5A (Ta)	4.5V, 10V	2.5V @ 250µA	54nC @ 4.5V	6000pF @ 15V	±20V	-	1.1W (Ta), 96.2W (Tc)	2.2 mOhm @ 21A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTLJS4159NT1G	ON Semiconductor	MOSFET N-CH 30V 3.6A 6-WFDN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1045pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WDFN (2x2) Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock5,120	MOSFET (Metal Oxide)	30V	3.6A (Ta)	1.8V, 4.5V	1V @ 250µA	13nC @ 4.5V	1045pF @ 15V	±8V	-	700mW (Ta)	35 mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN (2x2)	6-WDFN Exposed Pad
NTLGF3501NT1G	ON Semiconductor	MOSFET N-CH 20V 2.8A 6-DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.14W (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DFN (3x3) Package / Case: 6-VDFN Exposed Pad	Package: 6-VDFN Exposed Pad	Stock5,936	MOSFET (Metal Oxide)	20V	2.8A (Ta)	2.5V, 4.5V	2V @ 250µA	10nC @ 4.5V	275pF @ 10V	±12V	-	1.14W (Ta)	90 mOhm @ 3.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-DFN (3x3)	6-VDFN Exposed Pad
NTLGF3402PT1G	ON Semiconductor	MOSFET P-CH 20V 2.3A 6-DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.14W (Ta) Rds On (Max) @ Id, Vgs: 140 mOhm @ 2.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DFN (3x3) Package / Case: 6-VDFN Exposed Pad	Package: 6-VDFN Exposed Pad	Stock3,264	MOSFET (Metal Oxide)	20V	2.3A (Ta)	2.5V, 4.5V	2V @ 250µA	10nC @ 4.5V	350pF @ 10V	±12V	-	1.14W (Ta)	140 mOhm @ 2.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-DFN (3x3)	6-VDFN Exposed Pad
NTJS4405NT4G	ON Semiconductor	MOSFET N-CH 25V 1A SOT-363 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 630mW (Ta) Rds On (Max) @ Id, Vgs: 350 mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88/SC70-6/SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock59,976	MOSFET (Metal Oxide)	25V	1A (Ta)	2.7V, 4.5V	1.5V @ 250µA	1.5nC @ 4.5V	60pF @ 10V	±8V	-	630mW (Ta)	350 mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-88/SC70-6/SOT-363	6-TSSOP, SC-88, SOT-363
NTJS4405NT4	ON Semiconductor	MOSFET N-CH 25V 1A SOT-363 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 630mW (Ta) Rds On (Max) @ Id, Vgs: 350 mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88/SC70-6/SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock6,256	MOSFET (Metal Oxide)	25V	1A (Ta)	2.7V, 4.5V	1.5V @ 250µA	1.5nC @ 4.5V	60pF @ 10V	±8V	-	630mW (Ta)	350 mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-88/SC70-6/SOT-363	6-TSSOP, SC-88, SOT-363
NTJS4405NT1	ON Semiconductor	MOSFET N-CH 25V 1A SOT-363 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 630mW (Ta) Rds On (Max) @ Id, Vgs: 350 mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88/SC70-6/SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock6,896	MOSFET (Metal Oxide)	25V	1A (Ta)	2.7V, 4.5V	1.5V @ 250µA	1.5nC @ 4.5V	60pF @ 10V	±8V	-	630mW (Ta)	350 mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-88/SC70-6/SOT-363	6-TSSOP, SC-88, SOT-363
NTJS3157NT4G	ON Semiconductor	MOSFET N-CH 20V 3.2A SOT-363 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88/SC70-6/SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock3,376	MOSFET (Metal Oxide)	20V	3.2A (Ta)	1.8V, 4.5V	1V @ 250µA	15nC @ 4.5V	500pF @ 10V	±8V	-	1W (Ta)	60 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-88/SC70-6/SOT-363	6-TSSOP, SC-88, SOT-363
NTJS3157NT4	ON Semiconductor	MOSFET N-CH 20V 3.2A SOT-363 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 400mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88/SC70-6/SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock7,152	MOSFET (Metal Oxide)	20V	3.2A (Ta)	1.8V, 4.5V	400mV @ 250µA	15nC @ 4.5V	500pF @ 10V	±8V	-	1W (Ta)	60 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-88/SC70-6/SOT-363	6-TSSOP, SC-88, SOT-363
NTJS3157NT2	ON Semiconductor	MOSFET N-CH 20V 3.2A SOT-363 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 400mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88/SC70-6/SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock7,248	MOSFET (Metal Oxide)	20V	3.2A (Ta)	1.8V, 4.5V	400mV @ 250µA	15nC @ 4.5V	500pF @ 10V	±8V	-	1W (Ta)	60 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-88/SC70-6/SOT-363	6-TSSOP, SC-88, SOT-363
NTJS3151PT2	ON Semiconductor	MOSFET P-CH 12V 2.7A SOT-363 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 400mV @ 100µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 12V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88/SC70-6/SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock3,248	MOSFET (Metal Oxide)	12V	2.7A (Ta)	1.8V, 4.5V	400mV @ 100µA	8.6nC @ 4.5V	850pF @ 12V	±12V	-	625mW (Ta)	60 mOhm @ 3.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-88/SC70-6/SOT-363	6-TSSOP, SC-88, SOT-363
NTHS4501NT1	ON Semiconductor	MOSFET N-CH 30V 4.9A CHIPFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 462pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 38 mOhm @ 4.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock48,000	MOSFET (Metal Oxide)	30V	4.9A (Ta)	4.5V, 10V	2V @ 250µA	9.1nC @ 10V	462pF @ 24V	±20V	-	1.3W (Ta)	38 mOhm @ 4.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	ChipFET?	8-SMD, Flat Lead
NTHD5904NT3G	ON Semiconductor	MOSFET N-CH 20V 2.5A CHIPFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 16V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 640mW (Ta) Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock5,552	MOSFET (Metal Oxide)	20V	2.5A (Ta)	2.5V, 4.5V	1.2V @ 250µA	6nC @ 4.5V	465pF @ 16V	±8V	-	640mW (Ta)	65 mOhm @ 3.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	ChipFET?	8-SMD, Flat Lead
NTHD5904NT3	ON Semiconductor	MOSFET N-CH 20V 2.5A CHIPFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 16V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 640mW (Ta) Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock2,480	MOSFET (Metal Oxide)	20V	2.5A (Ta)	2.5V, 4.5V	1.2V @ 250µA	6nC @ 4.5V	465pF @ 16V	±8V	-	640mW (Ta)	65 mOhm @ 3.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	ChipFET?	8-SMD, Flat Lead
NTHD5904NT1	ON Semiconductor	MOSFET N-CH 20V 2.5A CHIPFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 16V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 640mW (Ta) Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock36,000	MOSFET (Metal Oxide)	20V	2.5A (Ta)	2.5V, 4.5V	1.2V @ 250µA	6nC @ 4.5V	465pF @ 16V	±8V	-	640mW (Ta)	65 mOhm @ 3.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	ChipFET?	8-SMD, Flat Lead
NTHD3101FT3G	ON Semiconductor	MOSFET P-CH 20V 3.2A CHIPFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tj) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 10V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock2,448	MOSFET (Metal Oxide)	20V	3.2A (Tj)	1.8V, 4.5V	1.5V @ 250µA	7.4nC @ 4.5V	680pF @ 10V	±8V	Schottky Diode (Isolated)	1.1W (Ta)	80 mOhm @ 3.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	ChipFET?	8-SMD, Flat Lead