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ON Semiconductor |
MOSFET N-CH 24V 9.5A 4-LLP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 6V
- Vgs (Max): ±10V
- FET Feature: Current Sensing
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-PLLP
- Package / Case: 4-DFN
|
Package: 4-DFN |
Stock7,888 |
|
MOSFET (Metal Oxide) | 24V | 9.5A (Ta) | 10V | 2V @ 250µA | 25nC @ 10V | 1500pF @ 6V | ±10V | Current Sensing | 1.4W (Ta) | 13 mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 4-PLLP | 4-DFN |
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ON Semiconductor |
MOSFET N-CH 59V 2.6A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 59V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 35V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 1.69W (Ta)
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock226,908 |
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MOSFET (Metal Oxide) | 59V | 2.6A (Ta) | 3V, 10V | 2.5V @ 100µA | 7nC @ 4.5V | 250pF @ 35V | ±15V | - | 1.69W (Ta) | 125 mOhm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET P-CH 20V 3.8A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 16V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock394,656 |
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MOSFET (Metal Oxide) | 20V | 3.8A (Ta) | 4.5V, 10V | 2V @ 250µA | 18nC @ 10V | 630pF @ 16V | ±20V | - | 2W (Ta) | 90 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 60V 500MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 225mW (Ta)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock49,140 |
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MOSFET (Metal Oxide) | 60V | 500mA (Ta) | 10V | 3V @ 1mA | - | 60pF @ 10V | ±20V | - | 225mW (Ta) | 5 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 60V 0.5A TO-92
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,992 |
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MOSFET (Metal Oxide) | 60V | 500mA (Ta) | 10V | 3V @ 1mA | - | 60pF @ 10V | ±20V | - | 350mW (Ta) | 5 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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ON Semiconductor |
MOSFET N-CH 60V 0.5A TO-92
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,312 |
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MOSFET (Metal Oxide) | 60V | 500mA (Ta) | 10V | 3V @ 1mA | - | 60pF @ 10V | ±20V | - | 350mW (Ta) | 5 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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ON Semiconductor |
MOSFET N-CH 60V 0.5A TO-92
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock12,216 |
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MOSFET (Metal Oxide) | 60V | 500mA (Ta) | 10V | 3V @ 1mA | - | 60pF @ 10V | ±20V | - | 350mW (Ta) | 5 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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ON Semiconductor |
MOSFET N-CH 40V 33A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock639,876 |
|
MOSFET (Metal Oxide) | 40V | 33A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 38nC @ 10V | 860pF @ 25V | ±20V | - | 40W (Tc) | 19 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 40V 51A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 47W (Tc)
- Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock810,624 |
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MOSFET (Metal Oxide) | 40V | 51A (Tc) | 5V, 10V | 3.5V @ 250µA | 80nC @ 10V | 1725pF @ 25V | ±20V | - | 47W (Tc) | 9.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 40V 69A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock654,648 |
|
MOSFET (Metal Oxide) | 40V | 69A (Tc) | 5V, 10V | 3.5V @ 250µA | 45nC @ 10V | 2850pF @ 25V | ±20V | - | 71W (Tc) | 8.5 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
ON Semiconductor |
MOSFET N-CH 30V 8.3A 8WDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 69A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 11.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2363pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 660mW (Ta), 46.3W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
|
Package: 8-PowerWDFN |
Stock4,432 |
|
MOSFET (Metal Oxide) | 30V | 8.3A (Ta), 69A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 29nC @ 11.5V | 2363pF @ 12V | ±20V | - | 660mW (Ta), 46.3W (Tc) | 5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 30V 7.1A 8WDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1013pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 660mW (Ta), 32.9W (Tc)
- Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
|
Package: 8-PowerWDFN |
Stock530,112 |
|
MOSFET (Metal Oxide) | 30V | 7.1A (Ta), 50A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 9nC @ 4.5V | 1013pF @ 12V | ±20V | - | 660mW (Ta), 32.9W (Tc) | 10.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 30V 7.1A 8WDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1013pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 660mW (Ta), 32.9W (Tc)
- Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
|
Package: 8-PowerWDFN |
Stock93,480 |
|
MOSFET (Metal Oxide) | 30V | 7.1A (Ta), 50A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 9nC @ 4.5V | 1013pF @ 12V | ±20V | - | 660mW (Ta), 32.9W (Tc) | 10.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 30V 7.5A 8WDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 11.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 660mW (Ta), 38.5W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
|
Package: 8-PowerWDFN |
Stock12,660 |
|
MOSFET (Metal Oxide) | 30V | 7.5A (Ta), 57A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 24nC @ 11.5V | 1755pF @ 12V | ±20V | - | 660mW (Ta), 38.5W (Tc) | 7 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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|
ON Semiconductor |
MOSFET N-CH 30V 1.6A SC70-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.38nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 381pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 294mW (Ta)
- Rds On (Max) @ Id, Vgs: 93 mOhm @ 1.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-3 (SOT323)
- Package / Case: SC-70, SOT-323
|
Package: SC-70, SOT-323 |
Stock552,012 |
|
MOSFET (Metal Oxide) | 30V | 1.6A (Ta) | 2.5V, 10V | 1.4V @ 250µA | 4.38nC @ 4.5V | 381pF @ 15V | ±12V | - | 294mW (Ta) | 93 mOhm @ 1.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 (SOT323) | SC-70, SOT-323 |
|
|
ON Semiconductor |
MOSFET N-CH 40V 136A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 167A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 32V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.4W (Ta), 254W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock94,716 |
|
MOSFET (Metal Oxide) | 40V | 24A (Ta), 167A (Tc) | 5V, 10V | 3.5V @ 250µA | 125nC @ 10V | 7000pF @ 32V | ±20V | - | 5.4W (Ta), 254W (Tc) | 4.5 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
ON Semiconductor |
MOSFET N-CH 30V 4.9A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock667,656 |
|
MOSFET (Metal Oxide) | 30V | 4.9A (Ta) | 4.5V, 10V | 3V @ 250µA | 7.7nC @ 4.5V | 940pF @ 25V | ±20V | - | 750mW (Ta) | 20 mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
|
|
ON Semiconductor |
MOSFET N-CH 30V 11.5A SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2614pF @ 12V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 880mW (Ta), 48.4W (Tc)
- Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
|
Package: 8-PowerTDFN, 5 Leads |
Stock94,596 |
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MOSFET (Metal Oxide) | 30V | 11.5A (Ta), 85A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 28nC @ 4.5V | 2614pF @ 12V | ±16V | - | 880mW (Ta), 48.4W (Tc) | 4.1 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET P-CH 20V 3.5A 6-WDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 16V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 38 mOhm @ 3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WDFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: 6-WDFN Exposed Pad |
Stock3,552 |
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MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 19.5nC @ 4.5V | 1100pF @ 16V | ±8V | - | 700mW (Ta) | 38 mOhm @ 3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
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ON Semiconductor |
MOSFET P-CH 20V 3.5A 6-WDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 16V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 38 mOhm @ 3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WDFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: 6-WDFN Exposed Pad |
Stock3,872 |
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MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 19.5nC @ 4.5V | 1100pF @ 16V | ±8V | - | 700mW (Ta) | 38 mOhm @ 3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
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ON Semiconductor |
MOSFET P-CH 20V 2.2A 6-WDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
- Vgs (Max): ±8V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 710mW (Ta)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WDFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: 6-WDFN Exposed Pad |
Stock5,968 |
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MOSFET (Metal Oxide) | 20V | 2.2A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 7.8nC @ 4.5V | 450pF @ 10V | ±8V | Schottky Diode (Isolated) | 710mW (Ta) | 100 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
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ON Semiconductor |
MOSFET P-CH 20V 2.2A 6-WDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
- Vgs (Max): ±8V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 710mW (Ta)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WDFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: 6-WDFN Exposed Pad |
Stock7,072 |
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MOSFET (Metal Oxide) | 20V | 2.2A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 7.8nC @ 4.5V | 450pF @ 10V | ±8V | Schottky Diode (Isolated) | 710mW (Ta) | 100 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
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ON Semiconductor |
MOSFET N-CH 60V 120A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 215W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock6,320 |
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MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 250µA | 170nC @ 10V | 5800pF @ 25V | ±20V | - | 215W (Tc) | 6 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 60A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 85nC @ 0V
- Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock6,256 |
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MOSFET (Metal Oxide) | 60V | 60A (Tc) | 10V | 4V @ 250µA | 85nC @ 0V | 3220pF @ 25V | ±20V | - | 125W (Tc) | 14 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 80A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 166W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock104,292 |
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MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 4V @ 250µA | 130nC @ 10V | 4500pF @ 25V | ±20V | - | 166W (Tc) | 10 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET P-CH 8V 3.7A 6-WDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 720mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 4V
- Vgs (Max): ±6V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WDFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: 6-WDFN Exposed Pad |
Stock5,664 |
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MOSFET (Metal Oxide) | 8V | 3.7A (Ta) | 1.2V, 4.5V | 720mV @ 250µA | 25nC @ 4.5V | 1585pF @ 4V | ±6V | - | 700mW (Ta) | 36 mOhm @ 6.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
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ON Semiconductor |
MOSFET P-CH 8V 3.7A 6-WDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 720mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 4V
- Vgs (Max): ±6V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WDFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: 6-WDFN Exposed Pad |
Stock6,672 |
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MOSFET (Metal Oxide) | 8V | 3.7A (Ta) | 1.2V, 4.5V | 720mV @ 250µA | 25nC @ 4.5V | 1585pF @ 4V | ±6V | - | 700mW (Ta) | 36 mOhm @ 6.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
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ON Semiconductor |
MOSFET N-CH 40V 23A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 603pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 33W (Tc)
- Rds On (Max) @ Id, Vgs: 31 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock637,920 |
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MOSFET (Metal Oxide) | 40V | 23A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 20nC @ 10V | 603pF @ 25V | ±20V | - | 33W (Tc) | 31 mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |