|
|
|
ON Semiconductor |
MOSFET N-CH 30V 10A SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 74A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2048pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 880mW (Ta), 47.2W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
|
Package: 8-PowerTDFN, 5 Leads |
Stock28,908 |
|
MOSFET (Metal Oxide) | 30V | 10A (Ta), 74A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 22nC @ 4.5V | 2048pF @ 12V | ±20V | - | 880mW (Ta), 47.2W (Tc) | 5 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 11A SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2677pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 890mW (Ta), 55.6W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
|
Package: 8-PowerTDFN, 5 Leads |
Stock3,568 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta), 90A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 28nC @ 4.5V | 2677pF @ 12V | ±20V | - | 890mW (Ta), 55.6W (Tc) | 4 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 7A SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 880mW (Ta), 47.2W (Tc)
- Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
|
Package: 8-PowerTDFN, 5 Leads |
Stock40,392 |
|
MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 11.5V | 2.5V @ 250µA | 17nC @ 4.5V | 1300pF @ 12V | ±20V | - | 880mW (Ta), 47.2W (Tc) | 7.6 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 9.1A SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 24V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
|
Package: 8-PowerTDFN, 5 Leads |
Stock4,816 |
|
MOSFET (Metal Oxide) | 30V | 9.1A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 30nC @ 4.5V | 2310pF @ 24V | ±20V | - | 900mW (Ta) | 6 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 11A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 24V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 5.25 mOhm @ 24A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
|
Package: 8-PowerTDFN, 5 Leads |
Stock43,164 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 40nC @ 4.5V | 2700pF @ 24V | ±20V | - | 900mW (Ta) | 5.25 mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 11A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 24V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 26A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
|
Package: 8-PowerTDFN, 5 Leads |
Stock175,872 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 50nC @ 4.5V | 3600pF @ 24V | ±20V | - | 900mW (Ta) | 4.5 mOhm @ 26A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 11A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 24V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 29A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
|
Package: 8-PowerTDFN, 5 Leads |
Stock20,652 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 60nC @ 4.5V | 4800pF @ 24V | ±20V | - | 900mW (Ta) | 3.5 mOhm @ 29A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 13.5A SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 54nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta), 96.2W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
|
Package: 8-PowerTDFN, 5 Leads |
Stock28,680 |
|
MOSFET (Metal Oxide) | 30V | 13.5A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 54nC @ 4.5V | 6000pF @ 15V | ±20V | - | 1.1W (Ta), 96.2W (Tc) | 2.2 mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
|
ON Semiconductor |
MOSFET P-CH 20V 0.215A SOT-723
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 215mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 15.3pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 280mW (Ta)
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 260mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-723
- Package / Case: SOT-723
|
Package: SOT-723 |
Stock1,472,328 |
|
MOSFET (Metal Oxide) | 20V | 215mA (Ta) | 1.8V, 4.5V | 1.3V @ 250µA | - | 15.3pF @ 10V | ±8V | - | 280mW (Ta) | 4 Ohm @ 260mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-723 | SOT-723 |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 1.8A SC88-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.75nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 2.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-88/SC70-6/SOT-363
- Package / Case: 6-TSSOP, SC-88, SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock1,083,564 |
|
MOSFET (Metal Oxide) | 30V | 1.8A (Ta) | 4.5V, 10V | 2.4V @ 250µA | 2.75nC @ 4.5V | 230pF @ 10V | ±20V | - | 300mW (Ta) | 60 mOhm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SC-88/SC70-6/SOT-363 | 6-TSSOP, SC-88, SOT-363 |
|
|
|
ON Semiconductor |
MOSFET P-CH 8V 5.4A CHIPFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 6.4V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: ChipFET?
- Package / Case: 8-SMD, Flat Lead
|
Package: 8-SMD, Flat Lead |
Stock524,664 |
|
MOSFET (Metal Oxide) | 8V | 5.4A (Tj) | 1.8V, 4.5V | 1.5V @ 250µA | 30nC @ 4.5V | 2400pF @ 6.4V | ±8V | - | 1.3W (Ta) | 25 mOhm @ 5.4A, 4.5V | - | Surface Mount | ChipFET? | 8-SMD, Flat Lead |
|
|
|
ON Semiconductor |
MOSFET N-CH 20V 2.5A CHIPFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 16V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 640mW (Ta)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: ChipFET?
- Package / Case: 8-SMD, Flat Lead
|
Package: 8-SMD, Flat Lead |
Stock350,052 |
|
MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 6nC @ 4.5V | 465pF @ 16V | ±8V | - | 640mW (Ta) | 65 mOhm @ 3.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | ChipFET? | 8-SMD, Flat Lead |
|
|
|
ON Semiconductor |
MOSFET N-CH 60V 3A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 1.5A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock130,272 |
|
MOSFET (Metal Oxide) | 60V | 3A (Ta) | 5V | 2V @ 250µA | 15nC @ 5V | 440pF @ 25V | ±15V | - | 1.3W (Ta) | 120 mOhm @ 1.5A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
ON Semiconductor |
MOSFET N-CH 24V 12A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc)
- Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock909,048 |
|
MOSFET (Metal Oxide) | 24V | 12A (Ta), 85A (Tc) | 4.5V, 10V | 2V @ 250µA | 17.7nC @ 5V | 2050pF @ 20V | ±20V | - | 1.25W (Ta), 78.1W (Tc) | 5.2 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
MOSFET N-CH 24V 80A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock1,739,052 |
|
MOSFET (Metal Oxide) | 24V | 80A (Tc) | 4.5V, 10V | 3V @ 250µA | 42nC @ 4.5V | 2600pF @ 20V | ±20V | - | 75W (Tc) | 5.8 mOhm @ 80A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
MOSFET N-CH 25V 11.4A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 78A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta), 64W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 78A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock103,356 |
|
MOSFET (Metal Oxide) | 25V | 11.4A (Ta), 78A (Tc) | 4.5V, 10V | 3V @ 250µA | 35nC @ 4.5V | 2250pF @ 12V | ±20V | - | 1.4W (Ta), 64W (Tc) | 6 mOhm @ 78A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
MOSFET N-CH 25V 10A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.36W (Ta), 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock204,468 |
|
MOSFET (Metal Oxide) | 25V | 10A (Ta), 32A (Tc) | 4.5V, 10V | 2V @ 250µA | 13.2nC @ 5V | 1333pF @ 20V | ±20V | - | 1.36W (Ta), 62.5W (Tc) | 8 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
MOSFET N-CH 25V 8.5A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta), 58W (Tc)
- Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock1,559,868 |
|
MOSFET (Metal Oxide) | 25V | 8.5A (Ta), 32A (Tc) | 4.5V, 10V | 2V @ 250µA | 14nC @ 4.5V | 1330pF @ 20V | ±20V | - | 1.25W (Ta), 58W (Tc) | 10.5 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 6.9A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock242,496 |
|
MOSFET (Metal Oxide) | 30V | 6.9A (Ta), 35A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 6.8nC @ 4.5V | 845pF @ 12V | ±20V | - | 1.26W (Ta), 32.6W (Tc) | 15 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 9A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock681,504 |
|
MOSFET (Metal Oxide) | 30V | 9A (Ta), 54A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 11nC @ 4.5V | 1350pF @ 12V | ±20V | - | 1.4W (Ta), 50W (Tc) | 10 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 9A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2155pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock218,040 |
|
MOSFET (Metal Oxide) | 30V | 9.6A (Ta), 58A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 15nC @ 4.5V | 2155pF @ 12V | ±20V | - | 1.3W (Ta), 52W (Tc) | 9 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
MOSFET N-CH 25V 7.8A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.78nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock566,748 |
|
MOSFET (Metal Oxide) | 25V | 7.8A (Ta), 32A (Tc) | 4.5V, 10V | 2V @ 250µA | 5.78nC @ 4.5V | 584pF @ 20V | ±20V | - | 1.5W (Ta), 50W (Tc) | 16.5 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
MOSFET N-CH 25V 3.8A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 17.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.76nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.14W (Ta), 22.3W (Tc)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock418,092 |
|
MOSFET (Metal Oxide) | 25V | 3.8A (Ta), 17.1A (Tc) | 4V, 5V | 2V @ 250µA | 3.76nC @ 4.5V | 225pF @ 20V | ±20V | - | 1.14W (Ta), 22.3W (Tc) | 45 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
MOSFET N-CH 100V 12A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc)
- Rds On (Max) @ Id, Vgs: 165 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock508,560 |
|
MOSFET (Metal Oxide) | 100V | 12A (Ta) | 10V | 4V @ 250µA | 20nC @ 10V | 550pF @ 25V | ±20V | - | 1.28W (Ta), 56.6W (Tc) | 165 mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
MOSFET N-CH 24V 90A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2120pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock193,560 |
|
MOSFET (Metal Oxide) | 24V | 90A (Ta) | 4.5V, 10V | 3V @ 250µA | 29nC @ 4.5V | 2120pF @ 20V | ±20V | - | 85W (Tc) | 5.8 mOhm @ 90A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
ON Semiconductor |
MOSFET N-CH 60V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4510pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 214W (Tj)
- Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 37.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock402,732 |
|
MOSFET (Metal Oxide) | 60V | 75A (Ta) | 10V | 4V @ 250µA | 130nC @ 10V | 4510pF @ 25V | ±20V | - | 2.4W (Ta), 214W (Tj) | 9.5 mOhm @ 37.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
ON Semiconductor |
MOSFET N-CH 60V 60A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 3075pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 30A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock402,000 |
|
MOSFET (Metal Oxide) | 60V | 60A (Ta) | 5V | 2V @ 250µA | 65nC @ 5V | 3075pF @ 25V | ±15V | - | 2.4W (Ta), 150W (Tj) | 16 mOhm @ 30A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
ON Semiconductor |
MOSFET N-CH 25V 23A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.76nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 37.5W (Tj)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock8,340 |
|
MOSFET (Metal Oxide) | 25V | 23A (Ta) | 4.5V, 10V | 2V @ 250µA | 3.76nC @ 4.5V | 225pF @ 20V | ±20V | - | 37.5W (Tj) | 45 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
0
Login/Register
BOM
Cart
