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ON Semiconductor |
MOSFET N-CH 25V 65A IPAK TRIMMED
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1308pF @ 12V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Stub Leads, IPak
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Package: TO-251-3 Stub Leads, IPak |
Stock2,672 |
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MOSFET (Metal Oxide) | 25V | 10.4A (Ta), 65A (Tc) | - | 2.5V @ 250µA | 21.8nC @ 10V | 1308pF @ 12V | - | - | 1.28W (Ta), 50W (Tc) | 7.5 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 25V 65A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1308pF @ 12V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock372,600 |
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MOSFET (Metal Oxide) | 25V | 10.4A (Ta), 65A (Tc) | - | 2.5V @ 250µA | 21.8nC @ 10V | 1308pF @ 12V | - | - | 1.28W (Ta), 50W (Tc) | 7.5 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 100V 42A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 42A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock12,852 |
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MOSFET (Metal Oxide) | 100V | 42A (Tc) | 10V | 4V @ 250µA | 51nC @ 10V | 1800pF @ 25V | ±20V | - | 136W (Tc) | 28 mOhm @ 42A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V 58A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Rds On (Max) @ Id, Vgs: 18.2 mOhm @ 58A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,664 |
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MOSFET (Metal Oxide) | 100V | 58A (Tc) | 10V | 4V @ 250µA | 100nC @ 10V | 3500pF @ 25V | ±20V | - | 167W (Tc) | 18.2 mOhm @ 58A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V 72A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 217W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 72A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,944 |
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MOSFET (Metal Oxide) | 100V | 77A (Tc) | 10V | 4V @ 250µA | 100nC @ 10V | 3700pF @ 25V | ±20V | - | 217W (Tc) | 14 mOhm @ 72A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 500V 5A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock6,900 |
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MOSFET (Metal Oxide) | 500V | 4.7A (Tc) | 10V | 4.5V @ 50µA | 18.5nC @ 10V | 530pF @ 25V | ±30V | - | 83W (Tc) | 1.5 Ohm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 25V 78A SGL IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 12V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock4,672 |
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MOSFET (Metal Oxide) | 25V | 12A (Ta), 78A (Tc) | - | 2.5V @ 250µA | 32nC @ 10V | 1960pF @ 12V | - | - | - | 5.7 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 30V 67A SGL IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 67A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta), 44W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Stub Leads, IPak
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Package: TO-251-3 Stub Leads, IPak |
Stock2,912 |
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MOSFET (Metal Oxide) | 30V | 12A (Ta), 67A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 33nC @ 10V | 2340pF @ 15V | ±20V | - | 1.4W (Ta), 44W (Tc) | 4.5 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 30V 79A SGL IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3052pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta), 52W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Stub Leads, IPak
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Package: TO-251-3 Stub Leads, IPak |
Stock36,048 |
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MOSFET (Metal Oxide) | 30V | 13A (Ta), 79A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 41nC @ 10V | 3052pF @ 15V | ±20V | - | 1.4W (Ta), 52W (Tc) | 3.7 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 30V 67A SGL IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 67A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta), 44W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock7,792 |
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MOSFET (Metal Oxide) | 30V | 12A (Ta), 67A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 33nC @ 10V | 2340pF @ 15V | ±20V | - | 1.4W (Ta), 44W (Tc) | 4.5 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 30V 54A SGL IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 30A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Stub Leads, IPak
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Package: TO-251-3 Stub Leads, IPak |
Stock3,600 |
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MOSFET (Metal Oxide) | 30V | 10.3A (Ta), 54A (Tc) | - | 2.2V @ 250µA | 24nC @ 10V | 1932pF @ 15V | - | - | - | 5.5 mOhm @ 30A, 10V | - | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 30V 41A SGL IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.37W (Ta), 29.4W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock6,576 |
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MOSFET (Metal Oxide) | 30V | 8.8A (Ta), 41A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 17.5nC @ 10V | 1314pF @ 15V | ±20V | - | 1.37W (Ta), 29.4W (Tc) | 8 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 30V 41A SGL IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.37W (Ta), 29.4W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Stub Leads, IPak
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Package: TO-251-3 Stub Leads, IPak |
Stock61,212 |
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MOSFET (Metal Oxide) | 30V | 8.8A (Ta), 41A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 17.5nC @ 10V | 1314pF @ 15V | ±20V | - | 1.37W (Ta), 29.4W (Tc) | 8 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 30V 54A SGL IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.38W (Ta), 37.5W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock37,500 |
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MOSFET (Metal Oxide) | 30V | 10.3A (Ta), 54A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 24nC @ 10V | 1932pF @ 15V | ±20V | - | 1.38W (Ta), 37.5W (Tc) | 5.5 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 30V 10.3A SGL IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.38W (Ta), 37.5W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Stub Leads, IPak
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Package: TO-251-3 Stub Leads, IPak |
Stock34,512 |
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MOSFET (Metal Oxide) | 30V | 10.3A (Ta), 54A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 24nC @ 10V | 1932pF @ 15V | ±20V | - | 1.38W (Ta), 37.5W (Tc) | 5.5 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 25V 49A SGL IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 12V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc)
- Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Stub Leads, IPak
|
Package: TO-251-3 Stub Leads, IPak |
Stock6,336 |
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MOSFET (Metal Oxide) | 25V | 9.2A (Ta), 49A (Tc) | - | 2.5V @ 250µA | 17.8nC @ 10V | 990pF @ 12V | - | - | 1.27W (Ta), 36.6W (Tc) | 9.3 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET P-CH 30V 3A SGL 6UDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 600mW (Ta)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFN (1.6x1.6)
- Package / Case: 6-PowerUFDFN
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Package: 6-PowerUFDFN |
Stock6,352 |
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MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4.5V, 10V | 3V @ 250µA | 5nC @ 4.5V | 250pF @ 15V | ±20V | - | 600mW (Ta) | 90 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (1.6x1.6) | 6-PowerUFDFN |
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|
ON Semiconductor |
MOSFET P-CH 20V 3.4A SGL 6UDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 600mW (Ta)
- Rds On (Max) @ Id, Vgs: 86 mOhm @ 3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFN (1.6x1.6)
- Package / Case: 6-PowerUFDFN
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Package: 6-PowerUFDFN |
Stock3,488 |
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MOSFET (Metal Oxide) | 20V | 2.2A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 8.5nC @ 4.5V | 450pF @ 10V | ±8V | - | 600mW (Ta) | 86 mOhm @ 3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (1.6x1.6) | 6-PowerUFDFN |
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ON Semiconductor |
MOSFET P-CH 30V 4.6A SGL 6WDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 62 mOhm @ 4.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WDFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: 6-WDFN Exposed Pad |
Stock5,456 |
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MOSFET (Metal Oxide) | 30V | 2.7A (Ta) | 2.5V, 4.5V | 1V @ 250µA | 15nC @ 4.5V | 960pF @ 15V | ±12V | - | 700mW (Ta) | 62 mOhm @ 4.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
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ON Semiconductor |
MOSFET P-CH 20V 3.4A SGL 6UDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 600mW (Ta)
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFN (1.6x1.6)
- Package / Case: 6-PowerUFDFN
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Package: 6-PowerUFDFN |
Stock2,864 |
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MOSFET (Metal Oxide) | 20V | 2.2A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 8.5nC @ 4.5V | 450pF @ 10V | ±8V | - | 600mW (Ta) | 85 mOhm @ 3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (1.6x1.6) | 6-PowerUFDFN |
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ON Semiconductor |
MOSFET N-CH 30V 1.2A 6UDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 15V
- Vgs (Max): ±8V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFN (1.6x1.6)
- Package / Case: 6-UFDFN Exposed Pad
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Package: 6-UFDFN Exposed Pad |
Stock5,232 |
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MOSFET (Metal Oxide) | 30V | 1.2A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 3nC @ 4.5V | 95pF @ 15V | ±8V | Schottky Diode (Isolated) | 500mW (Ta) | 200 mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (1.6x1.6) | 6-UFDFN Exposed Pad |
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ON Semiconductor |
MOSFET P-CH 30V 3A SGL 6UDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 600mW (Ta)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFN (1.6x1.6)
- Package / Case: 6-PowerUFDFN
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Package: 6-PowerUFDFN |
Stock4,512 |
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MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4.5V, 10V | 3V @ 250µA | 5nC @ 4.5V | 250pF @ 15V | ±20V | - | 600mW (Ta) | 90 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (1.6x1.6) | 6-PowerUFDFN |
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ON Semiconductor |
MOSFET P-CH 30V 2.2A SOT23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 480mW (Ta)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 2.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,840 |
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MOSFET (Metal Oxide) | 30V | 2.2A (Ta) | 2.5V, 10V | 1.4V @ 250µA | 15.6nC @ 10V | 720pF @ 15V | ±12V | - | 480mW (Ta) | 75 mOhm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 30V 3.2A SGL SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.76nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 432pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 480mW (Ta)
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 3.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,096 |
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MOSFET (Metal Oxide) | 30V | - | 2.5V, 10V | 1.4V @ 250µA | 4.76nC @ 4.5V | 432pF @ 15V | ±12V | - | 480mW (Ta) | 55 mOhm @ 3.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 30V 9A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 910mW (Ta), 25.5W (Tc)
- Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock2,528 |
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MOSFET (Metal Oxide) | 30V | 9A (Ta), 47A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 25.5nC @ 10V | 1650pF @ 15V | ±20V | - | 910mW (Ta), 25.5W (Tc) | 6.2 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 8.3A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1401pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 910mW (Ta), 22.3W (Tc)
- Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock4,112 |
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MOSFET (Metal Oxide) | 30V | 8.3A (Ta), 41A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 20.9nC @ 10V | 1401pF @ 15V | ±20V | - | 910mW (Ta), 22.3W (Tc) | 7.2 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 7.4A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1205pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 910mW (Ta), 19.8W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock3,088 |
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MOSFET (Metal Oxide) | 30V | 7.4A (Ta), 35A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 17.6nC @ 10V | 1205pF @ 15V | ±20V | - | 910mW (Ta), 19.8W (Tc) | 9 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 13A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 49.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 930mW (Ta), 48W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock4,416 |
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MOSFET (Metal Oxide) | 30V | 13A (Ta), 93A (Tc) | 4.5V, 10V | 2V @ 250µA | 49.4nC @ 10V | 4850pF @ 15V | ±20V | - | 930mW (Ta), 48W (Tc) | 3.2 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |