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ON Semiconductor |
MOSFET N-CH 30V 11.1A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.07W (Ta), 35.71W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Stub Leads, IPak
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Package: TO-251-3 Stub Leads, IPak |
Stock27,600 |
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MOSFET (Metal Oxide) | 30V | 8.9A (Ta), 55A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 22nC @ 10V | 1300pF @ 15V | ±20V | - | 1.07W (Ta), 35.71W (Tc) | 8 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 30V 11.1A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.07W (Ta), 35.71W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock2,112 |
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MOSFET (Metal Oxide) | 30V | 8.9A (Ta), 55A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 22nC @ 10V | 1300pF @ 15V | ±20V | - | 1.07W (Ta), 35.71W (Tc) | 8 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 60V 37A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1462pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Ta), 33W (Tc)
- Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 8.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock7,232 |
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MOSFET (Metal Oxide) | 60V | 11A (Ta), 37A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 28nC @ 10V | 1462pF @ 25V | ±20V | - | 2.7W (Ta), 33W (Tc) | 11.5 mOhm @ 8.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 40V 53.6A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Ta), 33W (Tc)
- Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock3,248 |
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MOSFET (Metal Oxide) | 40V | 17A (Ta), 53A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 31nC @ 10V | 1570pF @ 25V | ±20V | - | 2.7W (Ta), 33W (Tc) | 6.4 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 30V 126A ICEPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 148A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4270pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 24A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-ICEPAK - E1 PAD (6.3x4.9)
- Package / Case: 5-ICEPAK
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Package: 5-ICEPAK |
Stock3,456 |
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MOSFET (Metal Oxide) | 30V | 26A (Ta), 148A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 61nC @ 10V | 4270pF @ 15V | ±20V | - | 2.8W (Ta), 89W (Tc) | 2.6 mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 4-ICEPAK - E1 PAD (6.3x4.9) | 5-ICEPAK |
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ON Semiconductor |
MOSFET N-CH 25V 129A ICEPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 26.7A (Ta), 151A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 29A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-ICEPAK - E1 PAD (6.3x4.9)
- Package / Case: 5-ICEPAK
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Package: 5-ICEPAK |
Stock5,072 |
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MOSFET (Metal Oxide) | 25V | 26.7A (Ta), 151A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 66nC @ 10V | 4360pF @ 15V | ±20V | - | 2.8W (Ta), 89W (Tc) | 2.6 mOhm @ 29A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 4-ICEPAK - E1 PAD (6.3x4.9) | 5-ICEPAK |
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ON Semiconductor |
MOSFET N-CH 30V 15A ICEPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 66A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1644pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-ICEPAK - B1 PAD (4.8x3.8)
- Package / Case: 4-ICEPAK
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Package: 4-ICEPAK |
Stock7,072 |
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MOSFET (Metal Oxide) | 30V | 15A (Ta), 66A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 25nC @ 10V | 1644pF @ 15V | ±20V | - | 2.2W (Ta), 42W (Tc) | 6 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 4-ICEPAK - B1 PAD (4.8x3.8) | 4-ICEPAK |
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ON Semiconductor |
MOSFET N-CH 60V 20A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 36W (Tc)
- Rds On (Max) @ Id, Vgs: 39 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock120,756 |
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MOSFET (Metal Oxide) | 60V | 20A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 15nC @ 10V | 675pF @ 25V | ±20V | - | 36W (Tc) | 39 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 60V 46A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock129,132 |
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MOSFET (Metal Oxide) | 60V | 46A (Tc) | 4.5V, 10V | 2V @ 250µA | 29nC @ 10V | 1400pF @ 25V | ±20V | - | 71W (Tc) | 16 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 60V 43A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1261pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,288 |
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MOSFET (Metal Oxide) | 60V | 43A (Tc) | 10V | 4V @ 250µA | 23nC @ 10V | 1261pF @ 25V | ±20V | - | 71W (Tc) | 18 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 620V 10A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 620V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 36W (Tc)
- Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock5,008 |
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MOSFET (Metal Oxide) | 620V | 10A (Tc) | 10V | 4.5V @ 100µA | 47nC @ 10V | 1425pF @ 25V | ±30V | - | 36W (Tc) | 750 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V 7.5A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 36W (Tc)
- Rds On (Max) @ Id, Vgs: 950 mOhm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock6,288 |
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MOSFET (Metal Oxide) | 600V | 8.4A (Tc) | 10V | 4.5V @ 100µA | 39nC @ 10V | 1140pF @ 25V | ±30V | - | 36W (Tc) | 950 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 620V 6A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 620V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 923pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 31W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock7,168 |
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MOSFET (Metal Oxide) | 620V | 6A (Tc) | 10V | 4.5V @ 100µA | 32nC @ 10V | 923pF @ 25V | ±30V | - | 31W (Tc) | 1.2 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 620V 4.4A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 620V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 28W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock4,128 |
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MOSFET (Metal Oxide) | 620V | 4.4A (Tc) | 10V | 4.5V @ 50µA | 19nC @ 10V | 535pF @ 25V | ±30V | - | 28W (Tc) | 2 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V 3.1A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 372pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 27W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock36,012 |
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MOSFET (Metal Oxide) | 600V | 3.1A (Tc) | 10V | 4.5V @ 50µA | 18nC @ 10V | 372pF @ 25V | ±30V | - | 27W (Tc) | 3.6 Ohm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V 2.4A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 274pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 24W (Tc)
- Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock36,216 |
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MOSFET (Metal Oxide) | 600V | 2.4A (Tc) | 10V | 4.5V @ 50µA | 10.1nC @ 10V | 274pF @ 25V | ±30V | - | 24W (Tc) | 4.8 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 500V 2.6A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 274pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 58W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 1.15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock6,464 |
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MOSFET (Metal Oxide) | 500V | 2.6A (Tc) | 10V | 4.5V @ 50µA | 10nC @ 10V | 274pF @ 25V | ±30V | - | 58W (Tc) | 3.3 Ohm @ 1.15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 150V 5A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta), 20W (Tc)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 3A, 10V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,408 |
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MOSFET (Metal Oxide) | 150V | 6A (Tc) | 10V | 4.5V @ 1mA | 30nC @ 10V | 1200pF @ 25V | ±20V | - | 1.25W (Ta), 20W (Tc) | 300 mOhm @ 3A, 10V | -65°C ~ 150°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 60V 5A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock62,388 |
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MOSFET (Metal Oxide) | 60V | 5A (Tc) | 10V | 4V @ 250µA | 20nC @ 10V | 510pF @ 25V | ±15V | - | 2.1W (Ta), 40W (Tc) | 450 mOhm @ 2.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 20V 10A 8SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,552 |
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MOSFET (Metal Oxide) | 20V | 10A (Ta) | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 4.6A 8WDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 840mW (Ta), 27.8W (Tc)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3x3)
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock2,368 |
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MOSFET (Metal Oxide) | 30V | 4.6A (Ta), 26A (Tc) | 4.5V, 11.5V | 3V @ 250µA | 10.8nC @ 10V | 580pF @ 15V | ±20V | - | 840mW (Ta), 27.8W (Tc) | 24 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3x3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 30V 5A 8WDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 964pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 860mW (Ta), 33.8W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3x3)
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock4,912 |
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MOSFET (Metal Oxide) | 30V | 5A (Ta), 32A (Tc) | 4.5V, 11.5V | 3V @ 250µA | 16.6nC @ 10V | 964pF @ 15V | ±20V | - | 860mW (Ta), 33.8W (Tc) | 20 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3x3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 100V 80A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 76A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock3,952 |
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MOSFET (Metal Oxide) | 100V | 80A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 4500pF @ 25V | ±20V | - | - | 13 mOhm @ 76A, 10V | - | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 30V SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 11.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 890mW (Ta), 55.5W (Tc)
- Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock3,632 |
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MOSFET (Metal Oxide) | 30V | 12.7A (Ta), 100A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 53nC @ 11.5V | 3250pF @ 12V | ±20V | - | 890mW (Ta), 55.5W (Tc) | 3.4 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 117A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 49.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3233pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 930mW (Ta), 73.5W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock6,048 |
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MOSFET (Metal Oxide) | 30V | 13.2A (Ta), 117A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 49.5nC @ 10V | 3233pF @ 12V | ±20V | - | 930mW (Ta), 73.5W (Tc) | 3 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 171A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 83.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta), 96.2W (Tc)
- Rds On (Max) @ Id, Vgs: 2 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock2,464 |
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MOSFET (Metal Oxide) | 30V | 17A (Ta), 171A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 83.6nC @ 10V | 5660pF @ 15V | ±20V | - | 950mW (Ta), 96.2W (Tc) | 2 mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 8.1A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta), 35.7W (Tc)
- Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Stub Leads, IPak
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Package: TO-251-3 Stub Leads, IPak |
Stock61,212 |
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MOSFET (Metal Oxide) | 30V | 8.1A (Ta), 44A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 16.2nC @ 10V | 1035pF @ 12V | ±20V | - | 1.1W (Ta), 35.7W (Tc) | 9.6 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 30V 9A TP-FA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 11.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock159,012 |
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MOSFET (Metal Oxide) | 30V | 9A (Ta), 58A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 25nC @ 11.5V | 1456pF @ 12V | ±20V | - | 1.3W (Ta), 52W (Tc) | 9 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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