Page 68 - ON Semiconductor Products - Transistors - FETs, MOSFETs - Single

NTD4959NHT4G
ON Semiconductor

MOSFET N-CH 30V 9A TP-FA

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock174,612
NTD4959NH-35G
ON Semiconductor

MOSFET N-CH 30V 9A IPAK

Package: TO-251-3 Stub Leads, IPak

Stock4,768
NTD4959NH-1G
ON Semiconductor

MOSFET N-CH 30V 9A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock5,792
NTD4959N-35G
ON Semiconductor

MOSFET N-CH 30V 9A IPAK

Package: TO-251-3 Stub Leads, IPak

Stock7,808
NTD4959N-1G
ON Semiconductor

MOSFET N-CH 30V 9A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,128
NTB6448ANT4G
ON Semiconductor

MOSFET N-CH 100V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,912
NTB6448ANG
ON Semiconductor

MOSFET N-CH 100V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,312
NTB6410ANG
ON Semiconductor

MOSFET N-CH 100V 76A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,608
NDF08N50ZG
ON Semiconductor

MOSFET N-CH 500V 8.5A TO-220FP

Package: TO-220-3 Full Pack

Stock4,144
NDD03N60Z-1G
ON Semiconductor

MOSFET N-CH 600V IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock13,104
NTTFS4945NTWG
ON Semiconductor

MOSFET N-CH 30V 7.1A 8WDFN

Package: 8-PowerWDFN

Stock5,248
NTTFS4945NTAG
ON Semiconductor

MOSFET N-CH 30V 7.1A 8WDFN

Package: 8-PowerWDFN

Stock6,240
NTTFS4943NTWG
ON Semiconductor

MOSFET N-CH 30V 8A 8WDFN

Package: 8-PowerWDFN

Stock5,296
NTTFS4943NTAG
ON Semiconductor

MOSFET N-CH 30V 8A 8WDFN

Package: 8-PowerWDFN

Stock2,560
NTTFS4941NTAG
ON Semiconductor

MOSFET N-CH 30V 8.3A 8WDFN

Package: 8-PowerWDFN

Stock2,192
NTP6413ANG
ON Semiconductor

MOSFET N-CH 100V 42A TO-220AB

Package: TO-220-3

Stock31,272
NTP6411ANG
ON Semiconductor

MOSFET N-CH 100V 72A TO-220AB

Package: TO-220-3

Stock5,968
NTMS4840NR2G
ON Semiconductor

MOSFET N-CH 30V 4.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock520,908
NTMFS4921NT3G
ON Semiconductor

MOSFET N-CH 30V 8.8A SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock12,864
NTD6416ANL-1G
ON Semiconductor

MOSFET N-CH 100V 19A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,576

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTD4959NHT4G	ON Semiconductor	MOSFET N-CH 30V 9A TP-FA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 2155pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock174,612	MOSFET (Metal Oxide)	30V	9A (Ta), 58A (Tc)	4.5V, 11.5V	2.5V @ 250µA	44nC @ 11.5V	2155pF @ 12V	±20V	-	1.3W (Ta), 52W (Tc)	9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4959NH-35G	ON Semiconductor	MOSFET N-CH 30V 9A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 2155pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock4,768	MOSFET (Metal Oxide)	30V	9A (Ta), 58A (Tc)	4.5V, 11.5V	2.5V @ 250µA	44nC @ 11.5V	2155pF @ 12V	±20V	-	1.3W (Ta), 52W (Tc)	9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
NTD4959NH-1G	ON Semiconductor	MOSFET N-CH 30V 9A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 2155pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,792	MOSFET (Metal Oxide)	30V	9A (Ta), 58A (Tc)	4.5V, 11.5V	2.5V @ 250µA	44nC @ 11.5V	2155pF @ 12V	±20V	-	1.3W (Ta), 52W (Tc)	9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD4959N-35G	ON Semiconductor	MOSFET N-CH 30V 9A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock7,808	MOSFET (Metal Oxide)	30V	9A (Ta), 58A (Tc)	4.5V, 11.5V	2.5V @ 250µA	25nC @ 11.5V	1456pF @ 12V	±20V	-	1.3W (Ta), 52W (Tc)	9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
NTD4959N-1G	ON Semiconductor	MOSFET N-CH 30V 9A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,128	MOSFET (Metal Oxide)	30V	9A (Ta), 58A (Tc)	4.5V, 11.5V	2.5V @ 250µA	25nC @ 11.5V	1456pF @ 12V	±20V	-	1.3W (Ta), 52W (Tc)	9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTB6448ANT4G	ON Semiconductor	MOSFET N-CH 100V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 13 mOhm @ 76A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,912	MOSFET (Metal Oxide)	100V	80A (Tc)	10V	4V @ 250µA	120nC @ 10V	4500pF @ 25V	±20V	-	-	13 mOhm @ 76A, 10V	-	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB6448ANG	ON Semiconductor	MOSFET N-CH 100V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 13 mOhm @ 76A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,312	MOSFET (Metal Oxide)	100V	80A (Tc)	10V	4V @ 250µA	120nC @ 10V	4500pF @ 25V	±20V	-	-	13 mOhm @ 76A, 10V	-	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB6410ANG	ON Semiconductor	MOSFET N-CH 100V 76A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 76A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,608	MOSFET (Metal Oxide)	100V	76A (Tc)	10V	4V @ 250µA	120nC @ 10V	4500pF @ 25V	±20V	-	188W (Tc)	13 mOhm @ 76A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NDF08N50ZG	ON Semiconductor	MOSFET N-CH 500V 8.5A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,144	MOSFET (Metal Oxide)	500V	8.5A (Tc)	10V	4.5V @ 100µA	46nC @ 10V	1095pF @ 25V	±30V	-	35W (Tc)	850 mOhm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
NDD03N60Z-1G	ON Semiconductor	MOSFET N-CH 600V IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 312pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 61W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock13,104	MOSFET (Metal Oxide)	600V	2.6A (Tc)	10V	4.5V @ 50µA	12nC @ 10V	312pF @ 25V	±30V	-	61W (Tc)	3.6 Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTTFS4945NTWG	ON Semiconductor	MOSFET N-CH 30V 7.1A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1194pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890mW (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock5,248	MOSFET (Metal Oxide)	30V	7.1A (Ta), 34A (Tc)	4.5V, 10V	2.2V @ 250µA	17.3nC @ 10V	1194pF @ 15V	±20V	-	890mW (Ta), 20W (Tc)	9 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NTTFS4945NTAG	ON Semiconductor	MOSFET N-CH 30V 7.1A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1194pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890mW (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock6,240	MOSFET (Metal Oxide)	30V	7.1A (Ta), 34A (Tc)	4.5V, 10V	2.2V @ 250µA	17.3nC @ 10V	1194pF @ 15V	±20V	-	890mW (Ta), 20W (Tc)	9 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NTTFS4943NTWG	ON Semiconductor	MOSFET N-CH 30V 8A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1386pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 840mW (Ta), 22.3W (Tc) Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock5,296	MOSFET (Metal Oxide)	30V	8A (Ta), 41A (Tc)	4.5V, 10V	2.2V @ 250µA	20.4nC @ 10V	1386pF @ 15V	±20V	-	840mW (Ta), 22.3W (Tc)	7.2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NTTFS4943NTAG	ON Semiconductor	MOSFET N-CH 30V 8A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1386pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 840mW (Ta), 22.3W (Tc) Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock2,560	MOSFET (Metal Oxide)	30V	8A (Ta), 41A (Tc)	4.5V, 10V	2.2V @ 250µA	20.4nC @ 10V	1386pF @ 15V	±20V	-	840mW (Ta), 22.3W (Tc)	7.2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NTTFS4941NTAG	ON Semiconductor	MOSFET N-CH 30V 8.3A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1619pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 840mW (Ta), 25.5W (Tc) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock2,192	MOSFET (Metal Oxide)	30V	8.3A (Ta), 46A (Tc)	4.5V, 10V	2.2V @ 250µA	22.8nC @ 10V	1619pF @ 15V	±20V	-	840mW (Ta), 25.5W (Tc)	6.2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NTP6413ANG	ON Semiconductor	MOSFET N-CH 100V 42A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 42A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock31,272	MOSFET (Metal Oxide)	100V	42A (Tc)	10V	4V @ 250µA	51nC @ 10V	1800pF @ 25V	±20V	-	136W (Tc)	28 mOhm @ 42A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTP6411ANG	ON Semiconductor	MOSFET N-CH 100V 72A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 217W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 72A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,968	MOSFET (Metal Oxide)	100V	77A (Tc)	10V	4V @ 250µA	100nC @ 10V	3700pF @ 25V	±20V	-	217W (Tc)	14 mOhm @ 72A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTMS4840NR2G	ON Semiconductor	MOSFET N-CH 30V 4.5A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 680mW (Ta) Rds On (Max) @ Id, Vgs: 24 mOhm @ 6.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock520,908	MOSFET (Metal Oxide)	30V	4.5A (Ta)	4.5V, 10V	3V @ 250µA	9.5nC @ 10V	520pF @ 15V	±20V	-	680mW (Ta)	24 mOhm @ 6.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NTMFS4921NT3G	ON Semiconductor	MOSFET N-CH 30V 8.8A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 58.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 870mW (Ta), 38.5W (Tc) Rds On (Max) @ Id, Vgs: 6.95 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock12,864	MOSFET (Metal Oxide)	30V	8.8A (Ta), 58.5A (Tc)	4.5V, 11.5V	2.5V @ 250µA	25nC @ 11.5V	1400pF @ 12V	±20V	-	870mW (Ta), 38.5W (Tc)	6.95 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTD6416ANL-1G	ON Semiconductor	MOSFET N-CH 100V 19A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 74 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,576	MOSFET (Metal Oxide)	100V	19A (Tc)	4.5V, 10V	2.2V @ 250µA	40nC @ 10V	1000pF @ 25V	±20V	-	71W (Tc)	74 mOhm @ 19A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD6416AN-1G	ON Semiconductor	MOSFET N-CH 100V 17A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 81 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,352	MOSFET (Metal Oxide)	100V	17A (Tc)	10V	4V @ 250µA	20nC @ 10V	620pF @ 25V	±20V	-	71W (Tc)	81 mOhm @ 17A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD6415AN-1G	ON Semiconductor	MOSFET N-CH 100V 23A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,672	MOSFET (Metal Oxide)	100V	23A (Tc)	10V	4V @ 250µA	29nC @ 10V	700pF @ 25V	±20V	-	83W (Tc)	55 mOhm @ 23A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD6414AN-1G	ON Semiconductor	MOSFET N-CH 100V 32A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 37 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,368	MOSFET (Metal Oxide)	100V	32A (Tc)	10V	4V @ 250µA	40nC @ 10V	1450pF @ 25V	±20V	-	100W (Tc)	37 mOhm @ 32A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD4913NT4G	ON Semiconductor	MOSFET N-CH 30V 32A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1013pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.36W (Ta), 24W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock121,020	MOSFET (Metal Oxide)	30V	7.7A (Ta), 32A (Tc)	4.5V, 10V	2.2V @ 250µA	13nC @ 10V	1013pF @ 15V	±20V	-	1.36W (Ta), 24W (Tc)	10.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4913N-35G	ON Semiconductor	MOSFET N-CH 30V 32A IPAK TRIMMED FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1013pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.36W (Ta), 24W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock3,072	MOSFET (Metal Oxide)	30V	7.7A (Ta), 32A (Tc)	4.5V, 10V	2.2V @ 250µA	13nC @ 10V	1013pF @ 15V	±20V	-	1.36W (Ta), 24W (Tc)	10.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
NTD4913N-1G	ON Semiconductor	MOSFET N-CH 30V 32A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1013pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.36W (Ta), 24W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,552	MOSFET (Metal Oxide)	30V	7.7A (Ta), 32A (Tc)	4.5V, 10V	2.2V @ 250µA	13nC @ 10V	1013pF @ 15V	±20V	-	1.36W (Ta), 24W (Tc)	10.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NTD4910NT4G	ON Semiconductor	MOSFET N-CH 30V 37A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1203pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.37W (Ta), 27.3W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock668,280	MOSFET (Metal Oxide)	30V	8.2A (Ta), 37A (Tc)	4.5V, 10V	2.2V @ 250µA	15.4nC @ 10V	1203pF @ 15V	±20V	-	1.37W (Ta), 27.3W (Tc)	9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4910N-35G	ON Semiconductor	MOSFET N-CH 30V 37A IPAK TRIMMED FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1203pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.37W (Ta), 27.3W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock60,732	MOSFET (Metal Oxide)	30V	8.2A (Ta), 37A (Tc)	4.5V, 10V	2.2V @ 250µA	15.4nC @ 10V	1203pF @ 15V	±20V	-	1.37W (Ta), 27.3W (Tc)	9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak