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ON Semiconductor |
MOSFET N-CH 600V 300MA SOT223-4
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2W (Tc)
- Rds On (Max) @ Id, Vgs: 8 Ohm @ 700mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223 (TO-261)
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock6,208 |
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MOSFET (Metal Oxide) | 600V | 300mA (Tc) | 10V | 4.5V @ 50µA | 7.4nC @ 10V | 170pF @ 25V | ±30V | - | 2W (Tc) | 8 Ohm @ 700mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 (TO-261) | TO-261-4, TO-261AA |
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|
ON Semiconductor |
MOSFET N-CH 250V 0.35A CPH3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 20V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 170mA, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-CPH
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,528 |
|
MOSFET (Metal Oxide) | 250V | 350mA (Ta) | 2.5V, 4.5V | 1.3V @ 250µA | 2.1nC @ 4.5V | 140pF @ 20V | ±10V | - | 1W (Ta) | 6.5 Ohm @ 170mA, 4.5V | 150°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 50V 70MA SMCP3
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: SMCP
- Package / Case: SC-75, SOT-416
|
Package: SC-75, SOT-416 |
Stock7,920 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | SMCP | SC-75, SOT-416 |
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ON Semiconductor |
MOSFET P-CH 50V 0.07A MCP3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 1.32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6.2pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 22 Ohm @ 40mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-MCP
- Package / Case: SC-70, SOT-323
|
Package: SC-70, SOT-323 |
Stock823,176 |
|
MOSFET (Metal Oxide) | 50V | 70mA (Ta) | 4V, 10V | - | 1.32nC @ 10V | 6.2pF @ 10V | ±20V | - | 150mW (Ta) | 22 Ohm @ 40mA, 10V | 150°C (TJ) | Surface Mount | 3-MCP | SC-70, SOT-323 |
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ON Semiconductor |
MOSFET P-CH 50V 70MA CP3
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 3-CP
- Package / Case: 3-SMD, Flat Leads
|
Package: 3-SMD, Flat Leads |
Stock1,860,000 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 3-CP | 3-SMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 50V 100MA SMCP3
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: SMCP
- Package / Case: SC-75, SOT-416
|
Package: SC-75, SOT-416 |
Stock7,984 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | SMCP | SC-75, SOT-416 |
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ON Semiconductor |
MOSFET N-CH 50V 0.1A MCP3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6.2pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-MCP
- Package / Case: SC-70, SOT-323
|
Package: SC-70, SOT-323 |
Stock96,528 |
|
MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 4V, 10V | - | 1.4nC @ 10V | 6.2pF @ 10V | ±20V | - | 150mW (Ta) | 7.5 Ohm @ 50mA, 10V | 150°C (TJ) | Surface Mount | 3-MCP | SC-70, SOT-323 |
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ON Semiconductor |
MOSFET N-CH 600V 1A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 20V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 38W (Tc)
- Rds On (Max) @ Id, Vgs: 13 Ohm @ 500mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK/TP-FA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,488 |
|
MOSFET (Metal Oxide) | 600V | 1A (Ta) | 10V | - | 3.8nC @ 10V | 65pF @ 20V | ±30V | - | 1W (Ta), 38W (Tc) | 13 Ohm @ 500mA, 10V | 150°C (TJ) | Surface Mount | DPAK/TP-FA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V SO8FL
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Stock3,680 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
ON Semiconductor |
MOSFET N-CH 600V 300MA SOT223-4
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2W (Tc)
- Rds On (Max) @ Id, Vgs: 8 Ohm @ 700mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223 (TO-261)
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock3,504 |
|
MOSFET (Metal Oxide) | 600V | 300mA (Tc) | 10V | 4.5V @ 50µA | 7.4nC @ 10V | 170pF @ 25V | ±30V | - | 2W (Tc) | 8 Ohm @ 700mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 (TO-261) | TO-261-4, TO-261AA |
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|
ON Semiconductor |
MOSFET N-CH 600V 1A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 20V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 38W (Tc)
- Rds On (Max) @ Id, Vgs: 13 Ohm @ 500mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK/TP
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,264 |
|
MOSFET (Metal Oxide) | 600V | 1A (Ta) | 10V | - | 3.8nC @ 10V | 65pF @ 20V | ±30V | - | 1W (Ta), 38W (Tc) | 13 Ohm @ 500mA, 10V | 150°C (TJ) | Through Hole | IPAK/TP | TO-251-3 Short Leads, IPak, TO-251AA |
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|
ON Semiconductor |
MOSFET N-CH 100V 9A TP-FA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 19W (Tc)
- Rds On (Max) @ Id, Vgs: 225 mOhm @ 3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK/TP-FA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock70,044 |
|
MOSFET (Metal Oxide) | 100V | 9A (Ta) | 4V, 10V | 2.6V @ 1mA | 9.8nC @ 10V | 490pF @ 20V | ±20V | - | 1W (Ta), 19W (Tc) | 225 mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | DPAK/TP-FA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
ON Semiconductor |
MOSFET N-CH 20V 4.5A MCPH3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0.9V, 2.5V
- Vgs(th) (Max) @ Id: 800mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 2.5V
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
- Vgs (Max): ±5V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 2A, 2.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70FL/MCPH3
- Package / Case: 3-SMD, Flat Leads
|
Package: 3-SMD, Flat Leads |
Stock78,000 |
|
MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 0.9V, 2.5V | 800mV @ 1mA | 11nC @ 2.5V | 630pF @ 10V | ±5V | - | 1W (Ta) | 40 mOhm @ 2A, 2.5V | 150°C (TJ) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
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|
ON Semiconductor |
MOSFET P-CH 60V 4A CPH6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-CPH
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock4,480 |
|
MOSFET (Metal Oxide) | 60V | 4A (Ta) | 4V, 10V | - | 14nC @ 10V | 600pF @ 20V | ±20V | - | 1.6W (Ta) | 100 mOhm @ 2A, 10V | 150°C (TJ) | Surface Mount | 6-CPH | SOT-23-6 Thin, TSOT-23-6 |
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|
ON Semiconductor |
MOSFET N-CH 20V 3.5A CPH3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 71 mOhm @ 1.5A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-CPH
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,672 |
|
MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 1.8V, 4.5V | - | 2.8nC @ 4.5V | 260pF @ 10V | ±12V | - | 1W (Ta) | 71 mOhm @ 1.5A, 4.5V | 150°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
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|
ON Semiconductor |
MOSFET N-CH 50V 100MA SPA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
- Vgs(th) (Max) @ Id: 1.3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 250mW (Ta)
- Rds On (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: 3-SPA
- Package / Case: SC-72
|
Package: SC-72 |
Stock3,344 |
|
MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 1.5V, 4V | 1.3V @ 100µA | 1.57nC @ 10V | 6.6pF @ 10V | ±10V | - | 250mW (Ta) | 7.8 Ohm @ 50mA, 4V | 150°C (TJ) | Through Hole | 3-SPA | SC-72 |
|
|
ON Semiconductor |
MOSFET N-CH 30V 150MA SMCP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMCP
- Package / Case: SC-75, SOT-416
|
Package: SC-75, SOT-416 |
Stock5,772,252 |
|
MOSFET (Metal Oxide) | 30V | 150mA (Ta) | 1.5V, 4V | - | 1.58nC @ 10V | 7pF @ 10V | ±10V | - | 150mW (Ta) | 3.7 Ohm @ 80mA, 4V | 150°C (TJ) | Surface Mount | SMCP | SC-75, SOT-416 |
|
|
ON Semiconductor |
MOSFET N-CH 60V 6A CPH6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 43 mOhm @ 3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-CPH
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock7,280 |
|
MOSFET (Metal Oxide) | 60V | 6A (Ta) | 4V, 10V | 2.6V @ 1mA | 20nC @ 10V | 1040pF @ 20V | ±20V | - | 1.6W (Ta) | 43 mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | 6-CPH | SOT-23-6 Thin, TSOT-23-6 |
|
|
ON Semiconductor |
MOSFET N-CH 600V 23A TO3P3L
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 220W (Tc)
- Rds On (Max) @ Id, Vgs: 360 mOhm @ 11.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P-3L
- Package / Case: TO-3P-3, SC-65-3
|
Package: TO-3P-3, SC-65-3 |
Stock4,880 |
|
MOSFET (Metal Oxide) | 600V | 23A (Ta) | 10V | - | 84nC @ 10V | 2200pF @ 30V | ±30V | - | 2.5W (Ta), 220W (Tc) | 360 mOhm @ 11.5A, 10V | 150°C (TJ) | Through Hole | TO-3P-3L | TO-3P-3, SC-65-3 |
|
|
ON Semiconductor |
MOSFET N-CH 500V 26A TO3P3L
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 220W (Tc)
- Rds On (Max) @ Id, Vgs: 260 mOhm @ 13A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P-3L
- Package / Case: TO-3P-3, SC-65-3
|
Package: TO-3P-3, SC-65-3 |
Stock5,584 |
|
MOSFET (Metal Oxide) | 500V | 26A (Ta) | 10V | - | 87nC @ 10V | 2250pF @ 30V | ±30V | - | 2.5W (Ta), 220W (Tc) | 260 mOhm @ 13A, 10V | 150°C (TJ) | Through Hole | TO-3P-3L | TO-3P-3, SC-65-3 |
|
|
ON Semiconductor |
MOSFET N-CH 60V DPAK
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Stock2,336 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
ON Semiconductor |
MOSFET N-CH 500V 2A TP-FA
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TP-FA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock279,780 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TP-FA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
ON Semiconductor |
MOSFET N-CH 20V 3.5A SCH6
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 6-SCH
- Package / Case: SOT-563, SOT-666
|
Package: SOT-563, SOT-666 |
Stock293,280 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 6-SCH | SOT-563, SOT-666 |
|
|
ON Semiconductor |
MOSFET P-CH 12V 3A SCH6
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 6-SCH
- Package / Case: SOT-563, SOT-666
|
Package: SOT-563, SOT-666 |
Stock108,540 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 6-SCH | SOT-563, SOT-666 |
|
|
ON Semiconductor |
MOSFET P-CH 12V 3A SCH6
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 6-SCH
- Package / Case: SOT-563, SOT-666
|
Package: SOT-563, SOT-666 |
Stock48,996 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 6-SCH | SOT-563, SOT-666 |
|
|
ON Semiconductor |
MOSFET N-CH 30V 40A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.27W (Ta), 35.3W (Tc)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,872 |
|
MOSFET (Metal Oxide) | 30V | 7.6A (Ta), 40A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 10nC @ 4.5V | 940pF @ 12V | ±20V | - | 1.27W (Ta), 35.3W (Tc) | 13 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
ON Semiconductor |
MOSFET N-CH 30V 58A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 11.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta), 52W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,792 |
|
MOSFET (Metal Oxide) | 30V | 9.6A (Ta), 58A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 25nC @ 11.5V | 1456pF @ 12V | ±20V | - | 1.4W (Ta), 52W (Tc) | 9 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
ON Semiconductor |
MOSFET N-CH 30V 58A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 11.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2155pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,416 |
|
MOSFET (Metal Oxide) | 30V | 9A (Ta), 58A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 44nC @ 11.5V | 2155pF @ 12V | ±20V | - | 1.3W (Ta), 52W (Tc) | 9 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |