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ON Semiconductor |
MOSFET N-CH 30V 63A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1538pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta), 54.6W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,264 |
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MOSFET (Metal Oxide) | 30V | 10A (Ta), 63A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 13nC @ 4.5V | 1538pF @ 12V | ±20V | - | 1.4W (Ta), 54.6W (Tc) | 8 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 88A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 95A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 11.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2865pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.41W (Ta), 79W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,464 |
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MOSFET (Metal Oxide) | 30V | 12.7A (Ta), 95A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 48nC @ 11.5V | 2865pF @ 12V | ±20V | - | 1.41W (Ta), 79W (Tc) | 5 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 20A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.75W (Ta), 74W (Tc)
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 10A, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,880 |
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MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4V, 5V | 2V @ 250µA | 18.9nC @ 10V | 1260pF @ 25V | ±20V | - | 1.75W (Ta), 74W (Tc) | 27 mOhm @ 10A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 100V 40A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 42A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-3
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,480 |
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MOSFET (Metal Oxide) | 100V | 42A (Tc) | 10V | 4V @ 250µA | 51nC @ 10V | 1800pF @ 25V | ±20V | - | 136W (Tc) | 28 mOhm @ 42A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 60V 169A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10760pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 283W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-3
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,224 |
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MOSFET (Metal Oxide) | 60V | 220A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 10760pF @ 25V | ±20V | - | 283W (Tc) | 3 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 30V 2.5A SOT23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,176 |
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- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 28V 14A 8SO
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,568 |
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- | - | - | - | - | - | - | - | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET P-CH 20V 6.4A UDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFN (2x2)
- Package / Case: 6-UDFN Exposed Pad
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Package: 6-UDFN Exposed Pad |
Stock2,304 |
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MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 29nC @ 4.5V | 2600pF @ 15V | ±8V | - | 700mW (Ta) | 29 mOhm @ 6.4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (2x2) | 6-UDFN Exposed Pad |
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ON Semiconductor |
MOSFET P-CH 20V 6.4A UDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFN (2x2)
- Package / Case: 6-UDFN Exposed Pad
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Package: 6-UDFN Exposed Pad |
Stock5,616 |
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MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 29nC @ 4.5V | 2600pF @ 15V | ±8V | - | 700mW (Ta) | 29 mOhm @ 6.4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (2x2) | 6-UDFN Exposed Pad |
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ON Semiconductor |
MOSFET P-CH 20V 8.2A UDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 4.5V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFN (2x2)
- Package / Case: 6-UDFN Exposed Pad
|
Package: 6-UDFN Exposed Pad |
Stock2,336 |
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MOSFET (Metal Oxide) | 20V | 5.1A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 28nC @ 4.5V | 2240pF @ 15V | ±8V | - | - | 18 mOhm @ 7A, 4.5V | - | Surface Mount | 6-UDFN (2x2) | 6-UDFN Exposed Pad |
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ON Semiconductor |
MOSFET P-CH 20V 8.2A UDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 4.5V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFN (2x2)
- Package / Case: 6-UDFN Exposed Pad
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Package: 6-UDFN Exposed Pad |
Stock3,856 |
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MOSFET (Metal Oxide) | 20V | 5.1A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 28nC @ 4.5V | 2240pF @ 15V | ±8V | - | - | 18 mOhm @ 7A, 4.5V | - | Surface Mount | 6-UDFN (2x2) | 6-UDFN Exposed Pad |
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ON Semiconductor |
MOSFET P-CH 20V 8.4A WDFN6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WDFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: 6-WDFN Exposed Pad |
Stock4,336 |
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MOSFET (Metal Oxide) | 20V | 5A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 28nC @ 4.5V | 2240pF @ 15V | ±8V | - | 700mW (Ta) | 18 mOhm @ 7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
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ON Semiconductor |
MOSFET P-CH 20V 8.4A WDFN6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WDFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: 6-WDFN Exposed Pad |
Stock2,416 |
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MOSFET (Metal Oxide) | 20V | 5A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 28nC @ 4.5V | 2240pF @ 15V | ±8V | - | 700mW (Ta) | 18 mOhm @ 7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
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ON Semiconductor |
MOSFET N-CH 20V 0.89A SOT723
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±6V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-723
- Package / Case: SOT-723
|
Package: SOT-723 |
Stock7,248 |
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- | - | - | 1.5V, 4.5V | - | - | - | ±6V | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | SOT-723 | SOT-723 |
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ON Semiconductor |
MOSFET N-CH 20V 0.89A SOT723
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±6V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-723
- Package / Case: SOT-723
|
Package: SOT-723 |
Stock491,040 |
|
- | - | - | 1.5V, 4.5V | - | - | - | ±6V | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | SOT-723 | SOT-723 |
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|
ON Semiconductor |
MOSFET N-CH 600V 1.5A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 46W (Tc)
- Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 200mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,312 |
|
MOSFET (Metal Oxide) | 600V | 1.5A (Tc) | 10V | 3.7V @ 50µA | 7.2nC @ 10V | 160pF @ 25V | ±30V | - | 46W (Tc) | 8.5 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 600V 1.5A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 46W (Tc)
- Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 200mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock60,948 |
|
MOSFET (Metal Oxide) | 600V | 1.5A (Tc) | 10V | 3.7V @ 50µA | 7.2nC @ 10V | 160pF @ 25V | ±30V | - | 46W (Tc) | 8.5 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
ON Semiconductor |
MOSFET N-CH 20V 7A MCPH6
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MCPH
- Package / Case: 6-SMD, Flat Leads
|
Package: 6-SMD, Flat Leads |
Stock2,176 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 6-MCPH | 6-SMD, Flat Leads |
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|
ON Semiconductor |
MOSFET N-CH 30V 5A MCPH6
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MCPH
- Package / Case: 6-SMD, Flat Leads
|
Package: 6-SMD, Flat Leads |
Stock5,536 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 6-MCPH | 6-SMD, Flat Leads |
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|
ON Semiconductor |
MOSFET P-CH 12V 5A MCPH6
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MCPH
- Package / Case: 6-SMD, Flat Leads
|
Package: 6-SMD, Flat Leads |
Stock412,344 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 6-MCPH | 6-SMD, Flat Leads |
|
|
ON Semiconductor |
MOSFET P-CH 12V 5A MCPH6
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MCPH
- Package / Case: 6-SMD, Flat Leads
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Package: 6-SMD, Flat Leads |
Stock61,392 |
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- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 6-MCPH | 6-SMD, Flat Leads |
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ON Semiconductor |
MOSFET P-CH 20V 1.5A MCPH5
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V
- Vgs (Max): ±10V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 266 mOhm @ 750mA, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-MCPH
- Package / Case: 5-SMD, Flat Leads
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Package: 5-SMD, Flat Leads |
Stock4,064 |
|
MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 1.8V, 4.5V | - | 1.7nC @ 4.5V | 120pF @ 10V | ±10V | Schottky Diode (Isolated) | 800mW (Ta) | 266 mOhm @ 750mA, 4.5V | 150°C (TJ) | Surface Mount | 5-MCPH | 5-SMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 60V 2A MCPH3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 137 mOhm @ 1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70FL/MCPH3
- Package / Case: 3-SMD, Flat Leads
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Package: 3-SMD, Flat Leads |
Stock42,720 |
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MOSFET (Metal Oxide) | 60V | 2A (Ta) | 4V, 10V | - | 7nC @ 10V | 310pF @ 20V | ±20V | - | 1W (Ta) | 137 mOhm @ 1A, 10V | 150°C (TJ) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 2A 30V MCPH3
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 3-MCPH
- Package / Case: 3-SMD, Flat Leads
|
Package: 3-SMD, Flat Leads |
Stock3,632 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 3-MCPH | 3-SMD, Flat Leads |
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ON Semiconductor |
MOSFET P-CH 30V 2A MCPH3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 215 mOhm @ 1A, 4V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70FL/MCPH3
- Package / Case: 3-SMD, Flat Leads
|
Package: 3-SMD, Flat Leads |
Stock5,760 |
|
MOSFET (Metal Oxide) | 30V | 2A (Ta) | 1.8V, 4V | - | 2.8nC @ 4V | 240pF @ 10V | ±10V | - | 900mW (Ta) | 215 mOhm @ 1A, 4V | - | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 30V 8.5A EMH8
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-EMH
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock4,720 |
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- | - | - | - | - | - | - | - | - | - | - | 150°C (TJ) | Surface Mount | 8-EMH | 8-SMD, Flat Lead |
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ON Semiconductor |
MOSFET N-CH 24V 6A EFCP
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: EFCP1818-4CE-22
- Package / Case: 4-XFBGA
|
Package: 4-XFBGA |
Stock5,040 |
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- | - | - | - | - | - | - | - | - | - | - | 150°C (TJ) | Surface Mount | EFCP1818-4CE-22 | 4-XFBGA |
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ON Semiconductor |
MOSFET N-CH 24V 8A ECH8
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-ECH
- Package / Case: 8-SMD, Flat Lead
|
Package: 8-SMD, Flat Lead |
Stock2,464 |
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- | - | - | - | - | - | - | - | - | - | - | 150°C (TJ) | Surface Mount | 8-ECH | 8-SMD, Flat Lead |