Page 15 - Rohm Semiconductor Products - Transistors - FETs, MOSFETs - Single

R6530ENZC8
Rohm Semiconductor

MOSFET N-CH 650V 30A TO3

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R6047KNZ4C13
Rohm Semiconductor

MOSFET N-CH 600V 47A TO247

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Stock33
R6004RND3TL1
Rohm Semiconductor

600V 4A TO-252, PRESTOMOS WITH I

Package: -

Stock9,180
RD3L07BBGTL1
Rohm Semiconductor

NCH 60V 115A, TO-252, POWER MOSF

Package: -

Stock7,206
RV8L002SNHZGG2CR
Rohm Semiconductor

MOSFET N-CH 60V 250MA DFN1010-3W

Package: -

Stock19,356
R6030KNZC17
Rohm Semiconductor

MOSFET N-CH 600V 30A TO3PF

Package: -

Stock900
R6504ENJTL
Rohm Semiconductor

MOSFET N-CH 650V 4A LPTS

Package: -

Stock276
SCT3022KLHRC11
Rohm Semiconductor

SICFET N-CH 1200V 95A TO247N

Package: -

Stock4,020
RQ5L020SNTL
Rohm Semiconductor

MOSFET N-CH 60V 2A TSMT3

Package: -

Stock24,720
R6004JNXC7G
Rohm Semiconductor

MOSFET N-CH 600V 4A TO220FM

Package: -

Stock2,553
R6507ENXC7G
Rohm Semiconductor

650V 7A TO-220FM, LOW-NOISE POWE

Package: -

Stock2,994
SCT3022ALHRC11
Rohm Semiconductor

SICFET N-CH 650V 93A TO247N

Package: -

Stock6,738
RF4L055GNTCR
Rohm Semiconductor

MOSFET N-CH 60V 5.5A HUML2020L8

Package: -

Stock45,528
RSJ250P10FRATL
Rohm Semiconductor

MOSFET P-CH 100V 25A LPTS

Package: -

Stock5,709
RF4L040ATTCR
Rohm Semiconductor

PCH -60V -4A POWER, DFN2020, MOS

Package: -

Stock17,997
RD3S075CNTL1
Rohm Semiconductor

MOSFET N-CH 190V 7.5A TO252

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SCT2080KEHRC11
Rohm Semiconductor

SICFET N-CH 1200V 40A TO247N

Package: -

Stock9,426
R6520KNX3C16
Rohm Semiconductor

650V 20A, TO-220AB, HIGH-SPEED S

Package: -

Stock2,856
R6524KNJTL
Rohm Semiconductor

MOSFET N-CH 650V 24A LPTS

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BSM400C12P3G202
Rohm Semiconductor

SICFET N-CH 1200V 400A MODULE

Package: -

Stock12

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
R6530ENZC8	Rohm Semiconductor	MOSFET N-CH 650V 30A TO3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 960µA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	30A (Tc)	10V	4V @ 960µA	90 nC @ 10 V	2100 pF @ 25 V	±20V	-	86W (Tc)	140mOhm @ 14.5A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
R6047KNZ4C13	Rohm Semiconductor	MOSFET N-CH 600V 47A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 481W (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 25.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Stock33	MOSFET (Metal Oxide)	600 V	47A (Tc)	10V	5V @ 1mA	100 nC @ 10 V	4300 pF @ 25 V	±20V	-	481W (Tc)	72mOhm @ 25.8A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
R6004RND3TL1	Rohm Semiconductor	600V 4A TO-252, PRESTOMOS WITH I FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 7V @ 450µA Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 1.73Ohm @ 2A, 15V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock9,180	MOSFET (Metal Oxide)	600 V	4A (Tc)	15V	7V @ 450µA	10.5 nC @ 15 V	230 pF @ 100 V	±30V	-	60W (Tc)	1.73Ohm @ 2A, 15V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
RD3L07BBGTL1	Rohm Semiconductor	NCH 60V 115A, TO-252, POWER MOSF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 102W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,206	MOSFET (Metal Oxide)	60 V	70A (Tc)	4.5V, 10V	2.5V @ 1mA	47 nC @ 10 V	2950 pF @ 30 V	±20V	-	102W (Tc)	3.9mOhm @ 70A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
RV8L002SNHZGG2CR	Rohm Semiconductor	MOSFET N-CH 60V 250MA DFN1010-3W FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1010-3W Package / Case: 3-XFDFN	Package: -	Stock19,356	MOSFET (Metal Oxide)	60 V	250mA (Ta)	-	2.3V @ 1mA	-	15 pF @ 25 V	±20V	-	1W (Ta)	2.4Ohm @ 250mA, 10V	150°C (TJ)	Surface Mount	DFN1010-3W	3-XFDFN
R6030KNZC17	Rohm Semiconductor	MOSFET N-CH 600V 30A TO3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: -	Stock900	MOSFET (Metal Oxide)	600 V	30A (Tc)	10V	5V @ 1mA	56 nC @ 10 V	2350 pF @ 25 V	±20V	-	86W (Tc)	130mOhm @ 14.5A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
R6504ENJTL	Rohm Semiconductor	MOSFET N-CH 650V 4A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock276	MOSFET (Metal Oxide)	650 V	4A (Tc)	10V	4V @ 130µA	15 nC @ 10 V	220 pF @ 25 V	±20V	-	58W (Tc)	1.05Ohm @ 1.5A, 10V	150°C (TJ)	Surface Mount	LPTS	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SCT3022KLHRC11	Rohm Semiconductor	SICFET N-CH 1200V 95A TO247N FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 18.2mA Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2879 pF @ 800 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 427W Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Package: -	Stock4,020	SiCFET (Silicon Carbide)	1200 V	95A (Tc)	18V	5.6V @ 18.2mA	178 nC @ 18 V	2879 pF @ 800 V	+22V, -4V	-	427W	28.6mOhm @ 36A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
RQ5L020SNTL	Rohm Semiconductor	MOSFET N-CH 60V 2A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: -	Stock24,720	MOSFET (Metal Oxide)	60 V	2A (Ta)	4V, 10V	2.5V @ 1mA	2.7 nC @ 5 V	180 pF @ 10 V	±20V	-	700mW (Ta)	170mOhm @ 2A, 10V	150°C (TJ)	Surface Mount	TSMT3	SC-96
R6004JNXC7G	Rohm Semiconductor	MOSFET N-CH 600V 4A TO220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 7V @ 450µA Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: -	Stock2,553	MOSFET (Metal Oxide)	600 V	4A (Tc)	15V	7V @ 450µA	10.5 nC @ 15 V	260 pF @ 100 V	±30V	-	35W (Tc)	1.43Ohm @ 2A, 15V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
R6507ENXC7G	Rohm Semiconductor	650V 7A TO-220FM, LOW-NOISE POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: -	Stock2,994	MOSFET (Metal Oxide)	650 V	7A (Ta)	10V	4V @ 200µA	20 nC @ 10 V	390 pF @ 25 V	±20V	-	46W (Tc)	665mOhm @ 2.4A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
SCT3022ALHRC11	Rohm Semiconductor	SICFET N-CH 650V 93A TO247N FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 93A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 18.2mA Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2208 pF @ 500 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 339W Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Package: -	Stock6,738	SiCFET (Silicon Carbide)	650 V	93A (Tc)	18V	5.6V @ 18.2mA	133 nC @ 18 V	2208 pF @ 500 V	+22V, -4V	-	339W	28.6mOhm @ 36A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
RF4L055GNTCR	Rohm Semiconductor	MOSFET N-CH 60V 5.5A HUML2020L8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: HUML2020L8 Package / Case: 8-PowerUDFN	Package: -	Stock45,528	MOSFET (Metal Oxide)	60 V	5.5A (Ta)	4.5V, 10V	2.7V @ 1mA	7.8 nC @ 10 V	400 pF @ 30 V	±20V	-	2W (Ta)	43mOhm @ 5.5A, 10V	150°C (TJ)	Surface Mount	HUML2020L8	8-PowerUDFN
RSJ250P10FRATL	Rohm Semiconductor	MOSFET P-CH 100V 25A LPTS FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock5,709	MOSFET (Metal Oxide)	100 V	25A (Tc)	4V, 10V	2.5V @ 1mA	60 nC @ 5 V	8000 pF @ 25 V	±20V	-	50W (Tc)	63mOhm @ 25A, 10V	150°C	Surface Mount	LPTS	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RF4L040ATTCR	Rohm Semiconductor	PCH -60V -4A POWER, DFN2020, MOS FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 89mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: HUML2020L8 Package / Case: 6-PowerUDFN	Package: -	Stock17,997	MOSFET (Metal Oxide)	60 V	4A (Ta)	4.5V, 10V	2.5V @ 1mA	17.3 nC @ 10 V	850 pF @ 30 V	±20V	-	2W (Ta)	89mOhm @ 4A, 10V	150°C (TJ)	Surface Mount	HUML2020L8	6-PowerUDFN
RD3S075CNTL1	Rohm Semiconductor	MOSFET N-CH 190V 7.5A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 190 V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 336mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	190 V	7.5A (Tc)	4V, 10V	2.5V @ 1mA	30 nC @ 10 V	1100 pF @ 25 V	±20V	-	52W (Tc)	336mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
SCT2080KEHRC11	Rohm Semiconductor	SICFET N-CH 1200V 40A TO247N FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4V @ 4.4mA Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V Vgs (Max): +22V, -6V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Package: -	Stock9,426	SiCFET (Silicon Carbide)	1200 V	40A (Tc)	18V	4V @ 4.4mA	106 nC @ 18 V	2080 pF @ 800 V	+22V, -6V	-	-	117mOhm @ 10A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
R6520KNX3C16	Rohm Semiconductor	650V 20A, TO-220AB, HIGH-SPEED S FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 220W (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock2,856	MOSFET (Metal Oxide)	650 V	20A (Tc)	10V	5V @ 630µA	40 nC @ 10 V	1550 pF @ 25 V	±20V	-	220W (Tc)	205mOhm @9.5A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
R6524KNJTL	Rohm Semiconductor	MOSFET N-CH 650V 24A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	5V @ 750µA	45 nC @ 10 V	1850 pF @ 25 V	±20V	-	245W (Tc)	185mOhm @ 11.3A, 10V	150°C (TJ)	Surface Mount	LPTS	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSM400C12P3G202	Rohm Semiconductor	SICFET N-CH 1200V 400A MODULE FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 400A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5.6V @ 106.8mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 10 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 1570W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: Module Package / Case: Module	Package: -	Stock12	SiCFET (Silicon Carbide)	1200 V	400A (Tc)	-	5.6V @ 106.8mA	-	17000 pF @ 10 V	+22V, -4V	-	1570W (Tc)	-	175°C (TJ)	Chassis Mount	Module	Module
R6006KNXC7G	Rohm Semiconductor	600V 6A TO-220FM, HIGH-SPEED SWI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: -	Stock2,961	MOSFET (Metal Oxide)	600 V	6A (Ta)	10V	5.5V @ 1mA	12 nC @ 10 V	350 pF @ 25 V	±20V	-	40W (Tc)	830mOhm @ 3A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
R6035VNX3C16	Rohm Semiconductor	600V 35A TO-220AB, PRESTOMOS WIT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: 6.5V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 347W (Tc) Rds On (Max) @ Id, Vgs: 114mOhm @ 8A, 15V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock2,715	MOSFET (Metal Oxide)	600 V	35A (Tc)	10V, 15V	6.5V @ 1.1mA	50 nC @ 10 V	2400 pF @ 100 V	±30V	-	347W (Tc)	114mOhm @ 8A, 15V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
RRS100P03HZGTB	Rohm Semiconductor	PCH -30V -10A POWER MOSFET. RRS1 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock3,705	MOSFET (Metal Oxide)	30 V	10A (Ta)	4.5V, 10V	2.5V @ 1mA	39 nC @ 5 V	3600 pF @ 10 V	±20V	-	2W (Ta)	12.6mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
RD3P050SNTL1	Rohm Semiconductor	MOSFET N-CH 100V 5A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock28,377	MOSFET (Metal Oxide)	100 V	5A (Ta)	4V, 10V	2.5V @ 1mA	14 nC @ 10 V	530 pF @ 25 V	±20V	-	15W (Tc)	190mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
SCT3105KRHRC15	Rohm Semiconductor	1200V, 24A, 4-PIN THD, TRENCH-ST FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 3.81mA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 134W Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	24A (Tc)	18V	5.6V @ 3.81mA	51 nC @ 18 V	574 pF @ 800 V	+22V, -4V	-	134W	137mOhm @ 7.6A, 18V	175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
SCT3030ARHRC15	Rohm Semiconductor	650V, 70A, 4-PIN THD, TRENCH-STR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 262W Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Stock1,344	MOSFET (Metal Oxide)	650 V	70A (Tc)	18V	5.6V @ 13.3mA	104 nC @ 18 V	1526 pF @ 500 V	+22V, -4V	-	262W	39mOhm @ 27A, 18V	175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
BSS670AHZGT116	Rohm Semiconductor	NCH 60V 650MA, SOT-23, SMALL SIG FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 650mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SST3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	650mA (Ta)	2.5V, 10V	2V @ 10µA	-	47 pF @ 30 V	±20V	-	200mW (Ta)	680mOhm @ 650mA, 10V	150°C (TJ)	Surface Mount	SST3	TO-236-3, SC-59, SOT-23-3
RRH090P03GZETB	Rohm Semiconductor	MOSFET P-CH 30V 9A 8SOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 650mW (Ta) Rds On (Max) @ Id, Vgs: 15.4mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock3,327	MOSFET (Metal Oxide)	30 V	9A (Ta)	4V, 10V	2.5V @ 1mA	56 nC @ 10 V	3000 pF @ 10 V	±20V	-	650mW (Ta)	15.4mOhm @ 9A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)