|
|
|
Rohm Semiconductor |
650V 11A TO-252, LOW-NOISE POWER
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 124W (Tc)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
Package: - |
Stock7,410 |
|
MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 4V @ 320µA | 32 nC @ 10 V | 670 pF @ 25 V | ±20V | - | 124W (Tc) | 400mOhm @ 3.8A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
|
|
|
Rohm Semiconductor |
750V, 98A, 7-PIN SMD, TRENCH-STR
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 750 V
- Current - Continuous Drain (Id) @ 25°C: 98A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
- Vgs (Max): +21V, -4V
- FET Feature: -
- Power Dissipation (Max): 267W
- Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7L
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
|
Package: - |
Stock2,241 |
|
SiCFET (Silicon Carbide) | 750 V | 98A (Tj) | 18V | 4.8V @ 30.8mA | 170 nC @ 18 V | 4580 pF @ 500 V | +21V, -4V | - | 267W | 16.9mOhm @ 58A, 18V | 175°C (TJ) | Surface Mount | TO-263-7L | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
|
|
|
Rohm Semiconductor |
PCH -60V -0.21A, SOT-323, SMALL
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Rds On (Max) @ Id, Vgs: 5.3Ohm @ 210mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UMT3
- Package / Case: SC-70, SOT-323
|
Package: - |
Stock7,737 |
|
MOSFET (Metal Oxide) | 60 V | 210mA (Ta) | 4.5V, 10V | 2.5V @ 200µA | - | 34 pF @ 30 V | ±20V | - | 200mW (Ta) | 5.3Ohm @ 210mA, 10V | 150°C (TJ) | Surface Mount | UMT3 | SC-70, SOT-323 |
|
|
|
Rohm Semiconductor |
PCH -60V -35A POWER MOSFET - RD3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 56W (Tc)
- Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
Package: - |
Stock38,334 |
|
MOSFET (Metal Oxide) | 60 V | 35A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 37 nC @ 10 V | 1930 pF @ 30 V | ±20V | - | 56W (Tc) | 41mOhm @ 35A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 600V 20A LPTS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 304W (Tc)
- Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
|
Package: - |
Stock1,674 |
|
MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 4.5V @ 1mA | 65 nC @ 10 V | 2040 pF @ 25 V | ±30V | - | 304W (Tc) | 250mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 40V 120A LPTL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 178W (Tc)
- Rds On (Max) @ Id, Vgs: 1.86mOhm @ 50A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTL
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
|
Package: - |
Stock5,382 |
|
MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 2.5V @ 2mA | 165 nC @ 10 V | 12500 pF @ 20 V | ±20V | - | 178W (Tc) | 1.86mOhm @ 50A, 10V | 150°C (TJ) | Surface Mount | LPTL | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 600V 35A TO3PF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 102W (Tc)
- Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: TO-3P-3 Full Pack
|
Package: - |
Stock846 |
|
MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 5V @ 1mA | 72 nC @ 10 V | 3000 pF @ 25 V | ±20V | - | 102W (Tc) | 102mOhm @ 18.1A, 10V | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 60V 18A/68A 8HSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Rds On (Max) @ Id, Vgs: 5.6mOhm @ 18A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 18A (Ta), 68A (Tc) | 4.5V, 10V | 2.5V @ 100µA | 63 nC @ 10 V | 3230 pF @ 30 V | ±20V | - | 3W (Ta) | 5.6mOhm @ 18A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 20V 1A DFN1010-3W
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1W
- Rds On (Max) @ Id, Vgs: 470mOhm @ 500mA, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1010-3W
- Package / Case: 3-XFDFN
|
Package: - |
Stock11,526 |
|
MOSFET (Metal Oxide) | 20 V | 1A (Ta) | - | 1V @ 1mA | - | 40 pF @ 10 V | ±8V | - | 1W | 470mOhm @ 500mA, 4.5V | 150°C (TJ) | Surface Mount | DFN1010-3W | 3-XFDFN |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 60V 22A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Rds On (Max) @ Id, Vgs: 26mOhm @ 22A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
Package: - |
Stock31,101 |
|
MOSFET (Metal Oxide) | 60 V | 22A (Ta) | 4V, 10V | 3V @ 1mA | 30 nC @ 10 V | 1500 pF @ 10 V | ±20V | - | 20W (Tc) | 26mOhm @ 22A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 600V 9A TO220FM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 7V @ 1.38mA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 53W (Tc)
- Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
|
Package: - |
Stock5,697 |
|
MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 15V | 7V @ 1.38mA | 22 nC @ 15 V | 645 pF @ 100 V | ±30V | - | 53W (Tc) | 585mOhm @ 4.5A, 15V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 60V 300MA SMT3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMT3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 300mA (Ta) | 4V, 10V | 2.5V @ 1mA | 6 nC @ 10 V | 33 pF @ 10 V | ±20V | - | 200mW (Ta) | 1Ohm @ 300mA, 10V | 150°C (TJ) | Surface Mount | SMT3 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Rohm Semiconductor |
600V 30A TO-220FM, HIGH-SPEED SW
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 86W (Tc)
- Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
|
Package: - |
Stock2,985 |
|
MOSFET (Metal Oxide) | 600 V | 30A (Ta) | 10V | 5V @ 1mA | 56 nC @ 10 V | 2350 pF @ 25 V | ±20V | - | 86W (Tc) | 130mOhm @ 14.5A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
|
|
|
Rohm Semiconductor |
600V 6A TO-252, AUTOMOTIVE POWER
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 87W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
Package: - |
Stock7,305 |
|
MOSFET (Metal Oxide) | 600 V | 6A (Tc) | 10V | 4.5V @ 1mA | 15 nC @ 10 V | 460 pF @ 25 V | ±30V | - | 87W (Tc) | 1.2Ohm @ 3A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 650V 7A LPTS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
|
Package: - |
Stock2,994 |
|
MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 4V @ 200µA | 20 nC @ 10 V | 390 pF @ 25 V | ±20V | - | 78W (Tc) | 665mOhm @ 2.4A, 10V | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 600V 20A TO3PF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: TO-3P-3 Full Pack
|
Package: - |
Stock891 |
|
MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 5V @ 1mA | 40 nC @ 10 V | 1550 pF @ 25 V | ±20V | - | 68W (Tc) | 196mOhm @ 9.5A, 10V | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
|
|
|
Rohm Semiconductor |
600V 70A TO-247, PRESTOMOS WITH
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 7V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 770W (Tc)
- Rds On (Max) @ Id, Vgs: 58mOhm @ 35A, 15V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
|
Package: - |
Stock1,791 |
|
MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 15V | 7V @ 3mA | 165 nC @ 15 V | 6000 pF @ 100 V | ±30V | - | 770W (Tc) | 58mOhm @ 35A, 15V | 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
|
|
|
Rohm Semiconductor |
HIGH-SPEED SWITCHING NCH 800V 6A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
Package: - |
Stock4,185 |
|
MOSFET (Metal Oxide) | 800 V | 6A (Ta) | 10V | 4.5V @ 4mA | 22 nC @ 10 V | 650 pF @ 100 V | ±20V | - | 83W (Tc) | 900mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
|
|
|
Rohm Semiconductor |
1200V, 24A, 4-PIN THD, TRENCH-ST
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5.6V @ 3.81mA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V
- Vgs (Max): +22V, -4V
- FET Feature: -
- Power Dissipation (Max): 134W
- Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
|
Package: - |
Request a Quote |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 24A (Tj) | 18V | 5.6V @ 3.81mA | 51 nC @ 18 V | 574 pF @ 800 V | +22V, -4V | - | 134W | 137mOhm @ 7.6A, 18V | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
|
|
|
Rohm Semiconductor |
SICFET N-CH 1200V 24A TO247-4L
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5.6V @ 3.81mA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V
- Vgs (Max): +22V, -4V
- FET Feature: -
- Power Dissipation (Max): 134W
- Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
|
Package: - |
Stock306 |
|
SiCFET (Silicon Carbide) | 1200 V | 24A (Tc) | 18V | 5.6V @ 3.81mA | 51 nC @ 18 V | 574 pF @ 800 V | +22V, -4V | - | 134W | 137mOhm @ 7.6A, 18V | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 600V 15A TO3PF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: TO-3P-3 Full Pack
|
Package: - |
Stock861 |
|
MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 4V @ 1mA | 40 nC @ 10 V | 910 pF @ 25 V | ±20V | - | 120W (Tc) | 290mOhm @ 6.5A, 10V | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
|
|
|
Rohm Semiconductor |
NCH 60V 15.5A, HSMT8, POWER MOSF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 15.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 14W (Tc)
- Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSMT (3.2x3)
- Package / Case: 8-PowerVDFN
|
Package: - |
Stock8,700 |
|
MOSFET (Metal Oxide) | 60 V | 6A (Ta), 15.5A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 5.5 nC @ 10 V | 310 pF @ 30 V | ±20V | - | 2W (Ta), 14W (Tc) | 38mOhm @ 6A, 10V | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
|
|
|
Rohm Semiconductor |
MOSFET P-CH 45V 4.5A TO252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 15W (Tc)
- Rds On (Max) @ Id, Vgs: 155mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
Package: - |
Stock13,002 |
|
MOSFET (Metal Oxide) | 45 V | 4.5A (Ta) | 4V, 10V | 3V @ 1mA | 12 nC @ 5 V | 550 pF @ 10 V | ±20V | - | 15W (Tc) | 155mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
|
|
|
Rohm Semiconductor |
NCH 30V 21A POWER MOSFET: RQ3E10
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 15W (Tc)
- Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSMT (3.2x3)
- Package / Case: 8-PowerVDFN
|
Package: - |
Stock25,926 |
|
MOSFET (Metal Oxide) | 30 V | 10A (Ta), 21A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 22 nC @ 10 V | 1100 pF @ 15 V | ±20V | - | 2W (Ta), 15W (Tc) | 10.4mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
|
|
|
Rohm Semiconductor |
MOSFET P-CH 12V 4A TSMT3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 6 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT3
- Package / Case: SC-96
|
Package: - |
Stock25,575 |
|
MOSFET (Metal Oxide) | 12 V | 4A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 30 nC @ 4.5 V | 2350 pF @ 6 V | ±10V | - | 700mW (Ta) | 30mOhm @ 4A, 4.5V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
|
|
|
Rohm Semiconductor |
NCH 150V 60A, HSOP8, POWER MOSFE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Rds On (Max) @ Id, Vgs: 21.8mOhm @ 60A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
|
Package: - |
Stock14,625 |
|
MOSFET (Metal Oxide) | 150 V | 60A (Tc) | 6V, 10V | 4V @ 1mA | 46 nC @ 10 V | 2750 pF @ 75 V | ±20V | - | 104W (Tc) | 21.8mOhm @ 60A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 40V 40A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 26W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
Package: - |
Stock44,511 |
|
MOSFET (Metal Oxide) | 40 V | 40A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 19 nC @ 10 V | 1410 pF @ 20 V | ±20V | - | 26W (Tc) | 7.5mOhm @ 40A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 30V 32A/80A 8HSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 42.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Rds On (Max) @ Id, Vgs: 2.1mOhm @ 32A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
|
Package: - |
Stock14,400 |
|
MOSFET (Metal Oxide) | 30 V | 32A (Ta), 80A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 42.8 nC @ 10 V | 2850 pF @ 15 V | ±20V | - | 3W (Ta) | 2.1mOhm @ 32A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
0
Login/Register
BOM
Cart
