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Rohm Semiconductor |
MOSFET N-CH 30V 8A TSMT6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 15 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
Stock4,650 |
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MOSFET (Metal Oxide) | 30 V | 8A (Ta) | 2.5V, 4.5V | 1.5V @ 2mA | 16.2 nC @ 4.5 V | 1810 pF @ 15 V | ±12V | - | 950mW (Ta) | 16.5mOhm @ 8A, 4.5V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
SICFET N-CH 650V 29A TO263-7
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5.6V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
- Vgs (Max): +22V, -4V
- FET Feature: -
- Power Dissipation (Max): 125W
- Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
Stock2,757 |
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SiCFET (Silicon Carbide) | 650 V | 29A (Tc) | - | 5.6V @ 5mA | 48 nC @ 18 V | 571 pF @ 500 V | +22V, -4V | - | 125W | 104mOhm @ 10A, 18V | 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Rohm Semiconductor |
650V 24A TO-247, LOW-NOISE POWER
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 750µA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 245W (Tc)
- Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
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Package: - |
Stock1,425 |
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MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 4V @ 750µA | 70 nC @ 10 V | 1650 pF @ 25 V | ±20V | - | 245W (Tc) | 185mOhm @ 11.3A, 10V | 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
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Rohm Semiconductor |
NCH 600V 49A, TO-220AB, POWER MO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
- Vgs(th) (Max) @ Id: 6V @ 2.9mA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 448W (Tc)
- Rds On (Max) @ Id, Vgs: 82mOhm @ 11A, 12V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock3,000 |
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MOSFET (Metal Oxide) | 600 V | 49A (Tc) | 10V, 12V | 6V @ 2.9mA | 65 nC @ 10 V | 2940 pF @ 100 V | ±30V | - | 448W (Tc) | 82mOhm @ 11A, 12V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Rohm Semiconductor |
650V 7A TO-220FM, HIGH-SPEED SWI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 46W (Tc)
- Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock2,937 |
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MOSFET (Metal Oxide) | 650 V | 7A (Ta) | 10V | 5V @ 200µA | 14.5 nC @ 10 V | 470 pF @ 25 V | ±20V | - | 46W (Tc) | 665mOhm @ 2.4A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 60V 2A TSMT3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT3
- Package / Case: SC-96
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Package: - |
Stock23,979 |
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MOSFET (Metal Oxide) | 60 V | 2A (Ta) | 4V, 10V | 2.5V @ 1mA | 2.7 nC @ 5 V | 180 pF @ 10 V | ±20V | - | 700mW (Ta) | 170mOhm @ 2A, 10V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET N-CH 650V 35A TO3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1.21mA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 102W (Tc)
- Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: TO-3P-3 Full Pack
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 5V @ 1.21mA | 72 nC @ 10 V | 3000 pF @ 25 V | ±20V | - | 102W (Tc) | 115mOhm @ 18.1A, 10V | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
650V 30A TO-247, LOW-NOISE POWER
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 960µA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 305W (Tc)
- Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
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Package: - |
Stock1,458 |
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MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 4V @ 960µA | 90 nC @ 10 V | 2100 pF @ 25 V | ±20V | - | 305W (Tc) | 140mOhm @ 14.5A, 10V | 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
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Rohm Semiconductor |
750V, 13M, 4-PIN THD, TRENCH-STR
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 750 V
- Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 500 V
- Vgs (Max): +21V, -4V
- FET Feature: -
- Power Dissipation (Max): 312W
- Rds On (Max) @ Id, Vgs: 16.9mOhm @ 58A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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Package: - |
Request a Quote |
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SiCFET (Silicon Carbide) | 750 V | 105A (Tc) | 18V | 4.8V @ 30.8mA | 170 nC @ 18 V | 4580 pF @ 500 V | +21V, -4V | - | 312W | 16.9mOhm @ 58A, 18V | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Rohm Semiconductor |
MOSFET N-CH 650V 9A LPTS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock261 |
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MOSFET (Metal Oxide) | 650 V | 9A (Tc) | 10V | 5V @ 230µA | 16.5 nC @ 10 V | 540 pF @ 25 V | ±20V | - | 94W (Tc) | 585mOhm @ 2.8A, 10V | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET N-CH 45V 2.5A TSMT3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT3
- Package / Case: SC-96
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Package: - |
Stock17,631 |
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MOSFET (Metal Oxide) | 45 V | 2.5A (Ta) | 4V, 10V | 3V @ 1mA | 3.6 nC @ 5 V | 260 pF @ 10 V | ±20V | - | 700mW (Ta) | 100mOhm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET N-CH 30V 2.5A TSMT3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT3
- Package / Case: SC-96
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Package: - |
Stock15,165 |
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MOSFET (Metal Oxide) | 30 V | 2.5A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 4.6 nC @ 4.5 V | 220 pF @ 10 V | ±12V | - | 700mW (Ta) | 92mOhm @ 2.5A, 4.5V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
SICFET N-CH 650V 70A TO263-7
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
- Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
- Vgs (Max): +22V, -4V
- FET Feature: -
- Power Dissipation (Max): 267W
- Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
Stock1,311 |
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SiCFET (Silicon Carbide) | 650 V | 70A (Tc) | - | 5.6V @ 13.3mA | 104 nC @ 18 V | 1526 pF @ 500 V | +22V, -4V | - | 267W | 39mOhm @ 27A, 18V | 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Rohm Semiconductor |
NCH 30V 13A AUTOMOTIVE POWER MOS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Stock6,600 |
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MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 4V, 10V | 2.5V @ 1mA | 35 nC @ 5 V | 2000 pF @ 10 V | ±20V | - | 2W (Ta) | 8.3mOhm @ 13A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
200V 45A, NCH, TO-263S, POWER MO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta), 211W (Tc)
- Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263S
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock2,970 |
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MOSFET (Metal Oxide) | 200 V | 45A (Tc) | 10V | 5V @ 1mA | 80 nC @ 10 V | 4200 pF @ 25 V | ±30V | - | 1.56W (Ta), 211W (Tc) | 55mOhm @ 22.5A, 10V | 150°C (TJ) | Surface Mount | TO-263S | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
650V 4A TO-252, LOW-NOISE POWER
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 58W (Tc)
- Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock4,500 |
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MOSFET (Metal Oxide) | 650 V | 4A (Tc) | 10V | 4V @ 130µA | 15 nC @ 10 V | 220 pF @ 25 V | ±20V | - | 58W (Tc) | 1.05Ohm @ 1.5A, 10V | 150°C | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 60V 70A, TO-220AB, POWER MO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 89W (Tc)
- Rds On (Max) @ Id, Vgs: 4.6mOhm @ 70A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock2,769 |
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MOSFET (Metal Oxide) | 60 V | 70A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 47 nC @ 10 V | 2950 pF @ 30 V | ±20V | - | 89W (Tc) | 4.6mOhm @ 70A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 650V 20A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 630µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 231W (Tc)
- Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: - |
Stock1,002 |
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MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 5V @ 630µA | 40 nC @ 10 V | 1550 pF @ 25 V | ±20V | - | 231W (Tc) | 205mOhm @ 9.5A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 30V 2.5A TSMT3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT3
- Package / Case: SC-96
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Package: - |
Stock7,248 |
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MOSFET (Metal Oxide) | 30 V | 2.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 4.1 nC @ 5 V | 165 pF @ 10 V | ±20V | - | 700mW (Ta) | 70mOhm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
1200V, 22A, THD, SILICON-CARBIDE
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 800 V
- Vgs (Max): +22V, -6V
- FET Feature: -
- Power Dissipation (Max): 165W (Tc)
- Rds On (Max) @ Id, Vgs: 208mOhm @ 7A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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Package: - |
Stock1,320 |
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SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 18V | 4V @ 2.5mA | 62 nC @ 18 V | 1200 pF @ 800 V | +22V, -6V | - | 165W (Tc) | 208mOhm @ 7A, 18V | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
MOSFET P-CH 30V 2.5A TSMT3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 98mOhm @ 2.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT3
- Package / Case: SC-96
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Package: - |
Stock9,378 |
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MOSFET (Metal Oxide) | 30 V | 2.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 5.4 nC @ 5 V | 460 pF @ 10 V | ±20V | - | 700mW (Ta) | 98mOhm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
600V 20A TO-220FM, HIGH-SPEED SW
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock2,319 |
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MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 5V @ 1mA | 40 nC @ 10 V | 1550 pF @ 25 V | ±20V | - | 68W (Tc) | 196mOhm @ 9.5A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 60V 5A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 15W (Ta)
- Rds On (Max) @ Id, Vgs: 109mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock7,176 |
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MOSFET (Metal Oxide) | 60 V | 5A (Ta) | 4V, 10V | 3V @ 1mA | 8 nC @ 10 V | 290 pF @ 10 V | ±20V | - | 15W (Ta) | 109mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 80V 3A TSMT6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Rds On (Max) @ Id, Vgs: 131mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
Stock17,475 |
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MOSFET (Metal Oxide) | 80 V | 3A (Ta) | 4V, 10V | 2.5V @ 1mA | 6.5 nC @ 5 V | 550 pF @ 10 V | ±20V | - | 950mW (Ta) | 131mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET N-CH 30V 28A/80A 8HSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 28A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
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Package: - |
Stock2,820 |
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MOSFET (Metal Oxide) | 30 V | 28A (Ta), 80A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 94 nC @ 10 V | 5100 pF @ 15 V | ±20V | - | 3W (Ta) | 2.3mOhm @ 28A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Rohm Semiconductor |
PCH -60V -56A, HSOP8, POWER MOSF
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Rds On (Max) @ Id, Vgs: 11.3mOhm @ 15A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
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Package: - |
Stock31,371 |
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MOSFET (Metal Oxide) | 60 V | 56A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 130 nC @ 10 V | 6900 pF @ 30 V | ±20V | - | 3W (Ta) | 11.3mOhm @ 15A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Rohm Semiconductor |
600V 15A TO-220FM, LOW-NOISE POW
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock3,000 |
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MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 4V @ 1mA | 40 nC @ 10 V | 910 pF @ 25 V | ±20V | - | 60W (Tc) | 290mOhm @ 6.5A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
SICFET N-CH 1200V 17A TO263-7
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5.6V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V
- Vgs (Max): +22V, -4V
- FET Feature: -
- Power Dissipation (Max): 100W
- Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
Stock11,775 |
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SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | - | 5.6V @ 2.5mA | 42 nC @ 18 V | 398 pF @ 800 V | +22V, -4V | - | 100W | 208mOhm @ 5A, 18V | 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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