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Rohm Semiconductor |
650V, 70A, 4-PIN THD, TRENCH-STR
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
- Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
- Vgs (Max): +22V, -4V
- FET Feature: -
- Power Dissipation (Max): 262W
- Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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Package: - |
Stock1,290 |
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MOSFET (Metal Oxide) | 650 V | 70A (Tc) | 18V | 5.6V @ 13.3mA | 104 nC @ 18 V | 1526 pF @ 500 V | +22V, -4V | - | 262W | 39mOhm @ 27A, 18V | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Rohm Semiconductor |
MOSFET P-CH 30V 3.1A DFN1616-6W
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: DFN1616-6W
- Package / Case: 6-PowerWFDFN
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Package: - |
Stock17,556 |
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MOSFET (Metal Oxide) | 30 V | 3.1A (Ta) | - | 2.5V @ 1mA | 4.8 nC @ 5 V | 460 pF @ 10 V | ±20V | - | 1.5W (Ta) | 105mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | DFN1616-6W | 6-PowerWFDFN |
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Rohm Semiconductor |
NCH 600V 22A, TO-220FM, POWER MO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
- Vgs(th) (Max) @ Id: 6V @ 2.9mA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Rds On (Max) @ Id, Vgs: 82mOhm @ 11A, 12V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock2,940 |
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MOSFET (Metal Oxide) | 600 V | 22A (Tc) | 10V, 12V | 6V @ 2.9mA | 65 nC @ 10 V | 2940 pF @ 100 V | ±30V | - | 90W (Tc) | 82mOhm @ 11A, 12V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
750V, 31A, 7-PIN SMD, TRENCH-STR
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 750 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
- Vgs (Max): +21V, -4V
- FET Feature: -
- Power Dissipation (Max): 93W
- Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7L
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
Stock2,115 |
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SiCFET (Silicon Carbide) | 750 V | 31A (Tj) | 18V | 4.8V @ 8.89mA | 63 nC @ 18 V | 1460 pF @ 500 V | +21V, -4V | - | 93W | 59mOhm @ 17A, 18V | 175°C (TJ) | Surface Mount | TO-263-7L | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Rohm Semiconductor |
MOSFET P-CH 20V 2.5A TSMT3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT3
- Package / Case: SC-96
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Package: - |
Stock8,970 |
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MOSFET (Metal Oxide) | 20 V | 2.5A (Ta) | 2.5V, 4.5V | 2V @ 1mA | 7 nC @ 4.5 V | 630 pF @ 10 V | ±12V | - | 700mW (Ta) | 95mOhm @ 2.5A, 4.5V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET N-CH 100V 1A TSMT3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT3
- Package / Case: SC-96
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Package: - |
Stock19,569 |
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MOSFET (Metal Oxide) | 100 V | 1A (Ta) | 4V, 10V | 2.5V @ 1mA | 3.5 nC @ 5 V | 140 pF @ 25 V | ±20V | - | 700mW (Ta) | 520mOhm @ 1A, 10V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
NCH 60V 380MA, SOT-323, SMALL SI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200mW
- Rds On (Max) @ Id, Vgs: 680mOhm @ 380mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
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Package: - |
Stock27,759 |
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MOSFET (Metal Oxide) | 60 V | 380mA (Ta) | 2.5V, 10V | 2V @ 10µA | - | 47 pF @ 30 V | ±20V | - | 200mW | 680mOhm @ 380mA, 10V | 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Rohm Semiconductor |
750V, 31A, 7-PIN SMD, TRENCH-STR
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 750 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 4.8V @ 8.89mA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 500 V
- Vgs (Max): +21V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 59mOhm @ 17A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7LA
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
Request a Quote |
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SiC (Silicon Carbide Junction Transistor) | 750 V | 31A (Tc) | 18V | 4.8V @ 8.89mA | 63 nC @ 18 V | 1460 pF @ 500 V | +21V, -4V | - | - | 59mOhm @ 17A, 18V | 175°C (TJ) | Surface Mount | TO-263-7LA | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Rohm Semiconductor |
MOSFET N-CH 100V 120A LPTL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 178W (Tc)
- Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTL
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock2,787 |
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MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 6V, 10V | 4V @ 2.5mA | 80 nC @ 10 V | 4170 pF @ 50 V | ±20V | - | 178W (Tc) | 5.8mOhm @ 50A, 10V | 150°C (TJ) | Surface Mount | LPTL | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET P-CH 12V 2.5A TSMT3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 760mW (Ta)
- Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT3
- Package / Case: SC-96
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Package: - |
Stock8,985 |
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MOSFET (Metal Oxide) | 12 V | 2.5A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 13 nC @ 4.5 V | 1350 pF @ 6 V | ±10V | - | 760mW (Ta) | 61mOhm @ 2.5A, 4.5V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET N-CH 650V 15A LPTS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 430µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 184W (Tc)
- Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock300 |
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MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 4V @ 430µA | 40 nC @ 10 V | 910 pF @ 25 V | ±20V | - | 184W (Tc) | 315mOhm @ 6.5A, 10V | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
600V 13A TO-252, PRESTOMOS WITH
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
- Vgs(th) (Max) @ Id: 6.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 131W (Tc)
- Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 15V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock7,677 |
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MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V, 15V | 6.5V @ 500µA | 21 nC @ 10 V | 900 pF @ 100 V | ±30V | - | 131W (Tc) | 300mOhm @ 3A, 15V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 40V 8A, TSMT8, POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT8
- Package / Case: 8-SMD, Flat Lead
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Package: - |
Stock17,853 |
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MOSFET (Metal Oxide) | 40 V | 8A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 10.6 nC @ 10 V | 530 pF @ 20 V | ±20V | - | 1.1W (Ta) | 16.5mOhm @ 8A, 10V | 150°C (TJ) | Surface Mount | TSMT8 | 8-SMD, Flat Lead |
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Rohm Semiconductor |
750V, 26M, 3-PIN THD, TRENCH-STR
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 750 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
- Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
- Vgs (Max): +21V, -4V
- FET Feature: -
- Power Dissipation (Max): 176W
- Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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Package: - |
Stock14,757 |
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SiCFET (Silicon Carbide) | 750 V | 56A (Tc) | 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | 2320 pF @ 500 V | +21V, -4V | - | 176W | 34mOhm @ 29A, 18V | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
1200V, 43A, 3-PIN THD, TRENCH-ST
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
- Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
- Vgs (Max): +21V, -4V
- FET Feature: -
- Power Dissipation (Max): 176W
- Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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SiCFET (Silicon Carbide) | 1200 V | 43A (Tc) | 18V | 4.8V @ 11.1mA | 91 nC @ 18 V | 2335 pF @ 800 V | +21V, -4V | - | 176W | 47mOhm @ 21A, 18V | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 30V 300MA UMT3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.1Ohm @ 300mA, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UMT3
- Package / Case: SC-70, SOT-323
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Package: - |
Stock107,979 |
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MOSFET (Metal Oxide) | 30 V | 300mA (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | - | 24 pF @ 10 V | ±12V | - | 200mW (Ta) | 1.1Ohm @ 300mA, 4.5V | 150°C (TJ) | Surface Mount | UMT3 | SC-70, SOT-323 |
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Rohm Semiconductor |
MOSFET N-CH 650V 15A TO3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 430µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: TO-3P-3 Full Pack
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 4V @ 430µA | 40 nC @ 10 V | 910 pF @ 25 V | ±20V | - | 60W (Tc) | 315mOhm @ 6.5A, 10V | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
NCH 60V 7A, HUML2020L8, POWER MO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020-8S
- Package / Case: 8-PowerUDFN
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Package: - |
Stock8,304 |
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MOSFET (Metal Oxide) | 60 V | 7A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 7.6 nC @ 10 V | 460 pF @ 30 V | ±20V | - | 2W (Ta) | 27mOhm @ 7A, 10V | 150°C (TJ) | Surface Mount | DFN2020-8S | 8-PowerUDFN |
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Rohm Semiconductor |
MOSFET N-CH 250V 6A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Rds On (Max) @ Id, Vgs: 530mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock10,209 |
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MOSFET (Metal Oxide) | 250 V | 6A (Tc) | 10V | 5V @ 1mA | 15 nC @ 10 V | 840 pF @ 25 V | ±30V | - | 52W (Tc) | 530mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
650V 11A TO-220FM, LOW-NOISE POW
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 53W (Tc)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock420 |
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MOSFET (Metal Oxide) | 650 V | 11A (Ta) | 10V | 4V @ 320µA | 32 nC @ 10 V | 670 pF @ 25 V | ±20V | - | 53W (Tc) | 400mOhm @ 3.8A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
750V, 51A, 7-PIN SMD, TRENCH-STR
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 750 V
- Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
- Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
- Vgs (Max): +21V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7LA
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
Stock3,000 |
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SiC (Silicon Carbide Junction Transistor) | 750 V | 51A (Tc) | 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | 2320 pF @ 500 V | +21V, -4V | - | - | 34mOhm @ 29A, 18V | 175°C (TJ) | Surface Mount | TO-263-7LA | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Rohm Semiconductor |
MOSFET N-CH 800V 1A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 36W (Tc)
- Rds On (Max) @ Id, Vgs: 8.7Ohm @ 500mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock7,311 |
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MOSFET (Metal Oxide) | 800 V | 1A (Tc) | 10V | 5.5V @ 1mA | 7.2 nC @ 10 V | 60 pF @ 25 V | ±30V | - | 36W (Tc) | 8.7Ohm @ 500mA, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 600V 15A TO3PF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: TO-3P-3 Full Pack
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Package: - |
Stock897 |
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MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 5V @ 1mA | 27.5 nC @ 10 V | 1050 pF @ 25 V | ±20V | - | 60W (Tc) | 290mOhm @ 6.5A, 10V | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
MOSFET P-CH 20V 3.5A TSMT6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
Stock7,773 |
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MOSFET (Metal Oxide) | 20 V | 3.5A (Ta) | 2.5V, 4.5V | 2V @ 1mA | 10.5 nC @ 4.5 V | 1200 pF @ 10 V | ±12V | - | 950mW (Ta) | 65mOhm @ 3.5A, 4.5V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET P-CH 12V 4.5A TSMT6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
Stock8,700 |
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MOSFET (Metal Oxide) | 12 V | 4.5A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 40 nC @ 4.5 V | 4200 pF @ 6 V | ±8V | - | 950mW (Ta) | 30mOhm @ 4.5A, 4.5V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
PCH -100V -50A POWER MOSFET: RD3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 101W (Tc)
- Rds On (Max) @ Id, Vgs: 41mOhm @ 25A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock11,436 |
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MOSFET (Metal Oxide) | 100 V | 50A (Tc) | 6V, 10V | 4V @ 1mA | 110 nC @ 10 V | 4620 pF @ 50 V | ±20V | - | 101W (Tc) | 41mOhm @ 25A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 650V 11A LPTS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 124W (Tc)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock270 |
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MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 5V @ 320µA | 22 nC @ 10 V | 760 pF @ 25 V | ±20V | - | 124W (Tc) | 400mOhm @ 3.8A, 10V | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
HIGH-SPEED SWITCHING NCH 800V 3A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 45W (Ta)
- Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock2,754 |
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MOSFET (Metal Oxide) | 800 V | 3A (Ta) | 10V | 4.5V @ 2mA | 11.5 nC @ 10 V | 300 pF @ 100 V | ±20V | - | 45W (Ta) | 1.8Ohm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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