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Rohm Semiconductor |
650V, 118A, THD, TRENCH-STRUCTUR
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5.6V @ 23.5mA
- Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V
- Vgs (Max): +22V, -4V
- FET Feature: -
- Power Dissipation (Max): 427W
- Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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Package: - |
Stock1,323 |
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SiCFET (Silicon Carbide) | 650 V | 118A (Tc) | 18V | 5.6V @ 23.5mA | 172 nC @ 18 V | 2884 pF @ 500 V | +22V, -4V | - | 427W | 22.1mOhm @ 47A, 18V | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 20V 5A TSMT6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
Stock11,907 |
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MOSFET (Metal Oxide) | 20 V | 5A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12 nC @ 4.5 V | 900 pF @ 10 V | ±10V | - | 950mW (Ta) | 30mOhm @ 5A, 4.5V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET N-CH 600V 18A TO220FM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 7V @ 4.2mA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 72W (Tc)
- Rds On (Max) @ Id, Vgs: 286mOhm @ 9A, 15V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock9,462 |
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MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 15V | 7V @ 4.2mA | 42 nC @ 15 V | 1300 pF @ 100 V | ±30V | - | 72W (Tc) | 286mOhm @ 9A, 15V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 650V 20A LPTS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 630µA
- Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 231W (Tc)
- Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock300 |
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MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 4V @ 630µA | 61 nC @ 10 V | 1400 pF @ 25 V | ±20V | - | 231W (Tc) | 205mOhm @ 9.5A, 10V | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
600V 24A TO-220FM, LOW-NOISE POW
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock2,940 |
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MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 4V @ 1mA | 70 nC @ 10 V | 1650 pF @ 25 V | ±20V | - | 74W (Tc) | 165mOhm @ 11.3A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 650V 20A TO3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 630µA
- Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: TO-3P-3 Full Pack
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 4V @ 630µA | 61 nC @ 10 V | 1400 pF @ 25 V | ±20V | - | 68W (Tc) | 205mOhm @ 9.5A, 10V | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
HIGH-SPEED SWITCHING NCH 800V 1.
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 4.2Ohm @ 800mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252GE
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock1,218 |
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MOSFET (Metal Oxide) | 800 V | 1.6A (Ta) | 10V | 4.5V @ 150µA | 7.5 nC @ 10 V | 140 pF @ 100 V | ±20V | - | 30W (Tc) | 4.2Ohm @ 800mA, 10V | 150°C (TJ) | Surface Mount | TO-252GE | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 1200V 40A TO247N
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 4V @ 4.4mA
- Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V
- Vgs (Max): +22V, -6V
- FET Feature: -
- Power Dissipation (Max): 262W (Tc)
- Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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Package: - |
Stock3,210 |
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SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 18V | 4V @ 4.4mA | 106 nC @ 18 V | 2080 pF @ 800 V | +22V, -6V | - | 262W (Tc) | 117mOhm @ 10A, 18V | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
800V 1.6A, TO-220FM, HIGH-SPEED
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 28W (Tc)
- Rds On (Max) @ Id, Vgs: 4.2Ohm @ 800mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock2,844 |
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MOSFET (Metal Oxide) | 800 V | 1.6A (Ta) | 10V | 4.5V @ 150µA | 7.5 nC @ 10 V | 140 pF @ 100 V | ±20V | - | 28W (Tc) | 4.2Ohm @ 800mA, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
SICFET N-CH 650V 30A TO247-4L
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5.6V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
- Vgs (Max): +22V, -4V
- FET Feature: -
- Power Dissipation (Max): 134W
- Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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Package: - |
Stock762 |
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SiCFET (Silicon Carbide) | 650 V | 30A (Tc) | 18V | 5.6V @ 5mA | 48 nC @ 18 V | 571 pF @ 500 V | +22V, -4V | - | 134W | 104mOhm @ 10A, 18V | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Rohm Semiconductor |
650V, 30A, 4-PIN THD, TRENCH-STR
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5.6V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
- Vgs (Max): +22V, -4V
- FET Feature: -
- Power Dissipation (Max): 134W
- Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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Package: - |
Stock1,143 |
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SiC (Silicon Carbide Junction Transistor) | 650 V | 30A (Tj) | 18V | 5.6V @ 5mA | 48 nC @ 18 V | 571 pF @ 500 V | +22V, -4V | - | 134W | 104mOhm @ 10A, 18V | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Rohm Semiconductor |
NCH 40V 10A, HUML2020L8, POWER M
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020-8S
- Package / Case: 8-PowerUDFN
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Package: - |
Stock8,370 |
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MOSFET (Metal Oxide) | 40 V | 10A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 10.6 nC @ 10 V | 530 pF @ 20 V | ±20V | - | 2W (Ta) | 14.2mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | DFN2020-8S | 8-PowerUDFN |
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Rohm Semiconductor |
MOSFET N-CH 30V 500MA SMT3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4 V
- Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Rds On (Max) @ Id, Vgs: 580mOhm @ 500mA, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMT3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock15,255 |
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MOSFET (Metal Oxide) | 30 V | 500mA (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 4 nC @ 4 V | 60 pF @ 10 V | ±12V | - | 200mW (Ta) | 580mOhm @ 500mA, 4.5V | 150°C (TJ) | Surface Mount | SMT3 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
PCH -60V -0.21A, SOT-323, SMALL
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Rds On (Max) @ Id, Vgs: 5.3Ohm @ 210mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UMT3
- Package / Case: SC-70, SOT-323
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Package: - |
Stock30 |
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MOSFET (Metal Oxide) | 60 V | 210mA (Ta) | 4.5V, 10V | 2.5V @ 100µA | - | 34 pF @ 30 V | ±20V | - | 300mW (Ta) | 5.3Ohm @ 210mA, 10V | 150°C (TJ) | Surface Mount | UMT3 | SC-70, SOT-323 |
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Rohm Semiconductor |
750V, 56A, 4-PIN THD, TRENCH-STR
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 750 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
- Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
- Vgs (Max): +21V, -4V
- FET Feature: -
- Power Dissipation (Max): 176W
- Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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Package: - |
Stock1,392 |
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SiCFET (Silicon Carbide) | 750 V | 56A (Tc) | 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | 2320 pF @ 500 V | +21V, -4V | - | 176W | 34mOhm @ 29A, 18V | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Rohm Semiconductor |
MOSFET N-CH 60V 200MA UMT3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Rds On (Max) @ Id, Vgs: 2.3Ohm @ 200mA, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UMT3
- Package / Case: SC-70, SOT-323
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 200mA (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | - | 18 pF @ 10 V | ±12V | - | 200mW (Ta) | 2.3Ohm @ 200mA, 4.5V | 150°C (TJ) | Surface Mount | UMT3 | SC-70, SOT-323 |
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Rohm Semiconductor |
MOSFET N-CH 600V 24A TO3PF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: TO-3P-3 Full Pack
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Package: - |
Stock900 |
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MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 4V @ 1mA | 70 nC @ 10 V | 1650 pF @ 25 V | ±20V | - | 120W (Tc) | 165mOhm @ 11.3A, 10V | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
4V DRIVE NCH MOSFET: MOSFETS ARE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Stock5,049 |
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MOSFET (Metal Oxide) | 30 V | 9A (Ta) | 4V, 10V | 2.5V @ 1mA | 6.8 nC @ 5 V | 440 pF @ 10 V | ±20V | - | 2W (Ta) | 17mOhm @ 9A, 10V | 150°C | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
600V 24A TO-220AB, PRESTOMOS WIT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
- Vgs(th) (Max) @ Id: 6.5V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 245W (Tc)
- Rds On (Max) @ Id, Vgs: 153mOhm @ 6A, 15V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock3,198 |
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MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V, 15V | 6.5V @ 700µA | 38 nC @ 10 V | 1800 pF @ 100 V | ±30V | - | 245W (Tc) | 153mOhm @ 6A, 15V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Rohm Semiconductor |
MOSFET P-CH 100V 13A TO252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock1,386 |
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MOSFET (Metal Oxide) | 100 V | 13A (Ta) | 4V, 10V | 2.5V @ 1mA | 40 nC @ 10 V | 2400 pF @ 25 V | ±20V | - | 20W (Tc) | 200mOhm @ 6.5A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
650V 76A TO-247, HIGH-SPEED SWIT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.96mA
- Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 735W (Tc)
- Rds On (Max) @ Id, Vgs: 46mOhm @ 44.4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
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Package: - |
Stock1,380 |
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MOSFET (Metal Oxide) | 650 V | 76A (Tc) | 10V | 5V @ 2.96mA | 165 nC @ 10 V | 7400 pF @ 25 V | ±20V | - | 735W (Tc) | 46mOhm @ 44.4A, 10V | 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 45V 2A TSMT3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT3
- Package / Case: SC-96
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Package: - |
Stock48,582 |
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MOSFET (Metal Oxide) | 45 V | 2A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 4.1 nC @ 4.5 V | 200 pF @ 10 V | ±12V | - | 700mW (Ta) | 180mOhm @ 2A, 4.V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
NCH 150V 20A, TO-252, POWER MOSF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 81mOhm @ 10A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock7,464 |
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MOSFET (Metal Oxide) | 150 V | 20A (Tc) | 6V, 10V | 4V @ 1mA | 12.4 nC @ 10 V | 730 pF @ 75 V | ±20V | - | 50W (Tc) | 81mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 150V 25A, HSMT8, POWER MOSFE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 59W (Tc)
- Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSMT (3.2x3)
- Package / Case: 8-PowerVDFN
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Package: - |
Stock8,490 |
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MOSFET (Metal Oxide) | 150 V | 25A (Tc) | 6V, 10V | 4V @ 1mA | 16.7 nC @ 10 V | 1010 pF @ 75 V | ±20V | - | 59W (Tc) | 60mOhm @ 25A, 10V | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Rohm Semiconductor |
600V 13A TO-220FM, PRESTOMOS WIT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
- Vgs(th) (Max) @ Id: 6.5V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Rds On (Max) @ Id, Vgs: 153mOhm @ 6A, 15V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock3,210 |
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MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V, 15V | 6.5V @ 700µA | 38 nC @ 10 V | 1800 pF @ 100 V | ±30V | - | 70W (Tc) | 153mOhm @ 6A, 15V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
PCH -40V -15A POWER MOSFET - RD3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 39mOhm @ 15A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock4,497 |
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MOSFET (Metal Oxide) | 40 V | 15A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 19.3 nC @ 10 V | 1030 pF @ 20 V | ±20V | - | 25W (Tc) | 39mOhm @ 15A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
600V 15A TO-220FM, HIGH-SPEED SW
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock2,967 |
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MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 5V @ 1mA | 27.5 nC @ 10 V | 1050 pF @ 25 V | ±20V | - | 60W (Tc) | 290mOhm @ 6.5A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
SICFET N-CH 650V 70A TO247-4L
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
- Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
- Vgs (Max): +22V, -4V
- FET Feature: -
- Power Dissipation (Max): 262W
- Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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Package: - |
Stock513 |
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SiCFET (Silicon Carbide) | 650 V | 70A (Tc) | 18V | 5.6V @ 13.3mA | 104 nC @ 18 V | 1526 pF @ 500 V | +22V, -4V | - | 262W | 39mOhm @ 27A, 18V | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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