Page 22 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STP360N4F6
STMicroelectronics

MOSFET N-CH 40V TO-220

Package: TO-220-3

Stock6,880
STW18N65M5
STMicroelectronics

MOSFET N CH 650V 15A TO-247

Package: TO-247-3

Stock7,536
STF32NM50N
STMicroelectronics

MOSFET N CH 500V 22A TO-220FP

Package: TO-220-3 Full Pack

Stock7,596
STW24N60DM2
STMicroelectronics

MOSFET N-CH 600V 18A TO-247

Package: TO-247-3

Stock6,016
STB32N65M5
STMicroelectronics

MOSFET N-CH 650V 24A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock14,040
STW10N95K5
STMicroelectronics

MOSFET N-CH 950V 8A TO-247

Package: TO-247-3

Stock4,304
STP7N95K3
STMicroelectronics

MOSFET N-CH 950V 7.2A TO-220

Package: TO-220-3

Stock510,360
STF40N65M2
STMicroelectronics

MOSFET N-CH 650V 32A TO220FP

Package: TO-220-3 Full Pack

Stock12,582
STI40N65M2
STMicroelectronics

MOSFET N-CH 650V 32A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock19,932
STP16N65M5
STMicroelectronics

MOSFET N-CH 650V 12A TO-220

Package: TO-220-3

Stock17,964
STP50NF25
STMicroelectronics

MOSFET N-CH 250V 45A TO-220

Package: TO-220-3

Stock14,784
STI24NM60N
STMicroelectronics

MOSFET N CH 600V 17A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,448
STF16N50M2
STMicroelectronics

MOSFET N-CH 500V 13A TO-220FP

Package: TO-220-3 Full Pack

Stock4,256
STL38N65M5
STMicroelectronics

MOSFET N-CH 650V 22.5A PWRFLAT8X

Package: 4-PowerFlat? HV

Stock22,818
STP10N95K5
STMicroelectronics

MOSFET N-CH 950V 8A TO-220

Package: TO-220-3

Stock3,760
STB100NF03L-03-1
STMicroelectronics

MOSFET N-CH 30V 100A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock21,192
STF19NM50N
STMicroelectronics

MOSFET N-CH 500V 14A TO-220FP

Package: TO-220-3 Full Pack

Stock12,768
STFI15NM65N
STMicroelectronics

MOSFET N-CH 650V I2PAK-FP

Package: TO-262-3 Full Pack, I2Pak

Stock8,352
STF30N10F7
STMicroelectronics

MOSFET N-CH 100V 35A TO-220FP

Package: TO-220-3 Full Pack

Stock5,792
STP14NM50N
STMicroelectronics

MOSFET N-CH 500V 12A TO-220

Package: TO-220-3

Stock67,260

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STP360N4F6	STMicroelectronics	MOSFET N-CH 40V TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 17930pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,880	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4.5V @ 250µA	340nC @ 10V	17930pF @ 25V	±20V	-	300W (Tc)	1.8 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
STW18N65M5	STMicroelectronics	MOSFET N CH 650V 15A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock7,536	MOSFET (Metal Oxide)	650V	15A (Tc)	10V	5V @ 250µA	31nC @ 10V	1240pF @ 100V	±25V	-	110W (Tc)	220 mOhm @ 7.5A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
STF32NM50N	STMicroelectronics	MOSFET N CH 500V 22A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1973pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,596	MOSFET (Metal Oxide)	500V	22A (Tc)	10V	4V @ 250µA	62.5nC @ 10V	1973pF @ 50V	±25V	-	35W (Tc)	130 mOhm @ 11A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STW24N60DM2	STMicroelectronics	MOSFET N-CH 600V 18A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,016	MOSFET (Metal Oxide)	600V	18A (Tc)	10V	5V @ 250µA	29nC @ 10V	1055pF @ 100V	±25V	-	150W (Tc)	200 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STB32N65M5	STMicroelectronics	MOSFET N-CH 650V 24A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 119 mOhm @ 12A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock14,040	MOSFET (Metal Oxide)	650V	24A (Tc)	10V	5V @ 250µA	72nC @ 10V	3320pF @ 100V	±25V	-	150W (Tc)	119 mOhm @ 12A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STW10N95K5	STMicroelectronics	MOSFET N-CH 950V 8A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock4,304	MOSFET (Metal Oxide)	950V	8A (Tc)	10V	5V @ 100µA	22nC @ 10V	630pF @ 100V	±30V	-	130W (Tc)	800 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STP7N95K3	STMicroelectronics	MOSFET N-CH 950V 7.2A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1031pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock510,360	MOSFET (Metal Oxide)	950V	7.2A (Tc)	10V	5V @ 100µA	34nC @ 10V	1031pF @ 100V	±30V	-	150W (Tc)	1.35 Ohm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
STF40N65M2	STMicroelectronics	MOSFET N-CH 650V 32A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2355pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 16A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock12,582	MOSFET (Metal Oxide)	650V	32A (Tc)	10V	4V @ 250µA	56.5nC @ 10V	2355pF @ 100V	±25V	-	25W (Tc)	99 mOhm @ 16A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STI40N65M2	STMicroelectronics	MOSFET N-CH 650V 32A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2355pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 16A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock19,932	MOSFET (Metal Oxide)	650V	32A (Tc)	10V	4V @ 250µA	56.5nC @ 10V	2355pF @ 100V	±25V	-	250W (Tc)	99 mOhm @ 16A, 10V	150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STP16N65M5	STMicroelectronics	MOSFET N-CH 650V 12A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock17,964	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	5V @ 250µA	45nC @ 10V	1250pF @ 100V	±25V	-	90W (Tc)	299 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
STP50NF25	STMicroelectronics	MOSFET N-CH 250V 45A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2670pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 69 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock14,784	MOSFET (Metal Oxide)	250V	45A (Tc)	10V	4V @ 250µA	68.2nC @ 10V	2670pF @ 25V	±20V	-	160W (Tc)	69 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STI24NM60N	STMicroelectronics	MOSFET N CH 600V 17A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,448	MOSFET (Metal Oxide)	600V	17A (Tc)	10V	4V @ 250µA	46nC @ 10V	1400pF @ 50V	±30V	-	125W (Tc)	190 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STF16N50M2	STMicroelectronics	MOSFET N-CH 500V 13A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,256	MOSFET (Metal Oxide)	500V	13A (Tc)	10V	4V @ 250µA	19.5nC @ 10V	710pF @ 100V	±25V	-	25W (Tc)	280 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
STL38N65M5	STMicroelectronics	MOSFET N-CH 650V 22.5A PWRFLAT8X FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 22.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 4-PowerFlat? HV	Package: 4-PowerFlat? HV	Stock22,818	MOSFET (Metal Oxide)	650V	3.5A (Ta), 22.5A (Tc)	10V	5V @ 250µA	71nC @ 10V	3000pF @ 100V	±25V	-	2.8W (Ta), 150W (Tc)	105 mOhm @ 12.5A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	4-PowerFlat? HV
STP10N95K5	STMicroelectronics	MOSFET N-CH 950V 8A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock3,760	MOSFET (Metal Oxide)	950V	8A (Tc)	10V	5V @ 100µA	22nC @ 10V	630pF @ 100V	±30V	-	130W (Tc)	800 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STB100NF03L-03-1	STMicroelectronics	MOSFET N-CH 30V 100A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock21,192	MOSFET (Metal Oxide)	30V	100A (Tc)	4.5V, 10V	2.5V @ 250µA	88nC @ 5V	6200pF @ 25V	±16V	-	300W (Tc)	3.2 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STF19NM50N	STMicroelectronics	MOSFET N-CH 500V 14A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock12,768	MOSFET (Metal Oxide)	500V	14A (Tc)	10V	4V @ 250µA	34nC @ 10V	1000pF @ 50V	±25V	-	30W (Tc)	250 mOhm @ 7A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STFI15NM65N	STMicroelectronics	MOSFET N-CH 650V I2PAK-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 983pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock8,352	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	4V @ 250µA	33.3nC @ 10V	983pF @ 50V	±25V	-	30W (Tc)	380 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAKFP (TO-281)	TO-262-3 Full Pack, I2Pak
STF30N10F7	STMicroelectronics	MOSFET N-CH 100V 35A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 50V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,792	MOSFET (Metal Oxide)	100V	24A (Tc)	10V	4.5V @ 250µA	19nC @ 10V	1270pF @ 50V	20V	-	25W (Tc)	24 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP14NM50N	STMicroelectronics	MOSFET N-CH 500V 12A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock67,260	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	4V @ 100µA	27nC @ 10V	816pF @ 50V	±25V	-	90W (Tc)	320 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STP265N6F6AG	STMicroelectronics	MOSFET N-CH 60V 180A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.85 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock22,164	MOSFET (Metal Oxide)	60V	180A (Tc)	10V	4V @ 250µA	183nC @ 10V	11800pF @ 25V	±20V	-	300W (Tc)	2.85 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
STH245N75F3-6	STMicroelectronics	MOSFET N-CH 75V 180A H2PAK-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK-6 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock19,188	MOSFET (Metal Oxide)	75V	180A (Tc)	10V	4V @ 250µA	87nC @ 10V	6800pF @ 25V	±20V	-	300W (Tc)	3 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK-6	TO-263-7, D2Pak (6 Leads + Tab)
STP8NK80Z	STMicroelectronics	MOSFET N-CH 800V 6.2A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock331,548	MOSFET (Metal Oxide)	800V	6.2A (Tc)	10V	4.5V @ 100µA	46nC @ 10V	1320pF @ 25V	±30V	-	140W (Tc)	1.5 Ohm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP165N10F4	STMicroelectronics	MOSFET N-CH 100V 120A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 315W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,672	MOSFET (Metal Oxide)	100V	120A (Tc)	10V	4V @ 250µA	180nC @ 10V	10500pF @ 25V	±20V	-	315W (Tc)	5.5 mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STFI8N80K5	STMicroelectronics	MOSFET N-CH 800V 6A I2PAKFP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock14,304	MOSFET (Metal Oxide)	800V	6A (Tc)	10V	5V @ 100µA	16.5nC @ 10V	450pF @ 100V	±30V	-	25W (Tc)	950 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAKFP (TO-281)	TO-262-3 Full Pack, I2Pak
STL24NM60N	STMicroelectronics	MOSFET N-CH 600V 16A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 215 mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 4-PowerFlat? HV	Package: 4-PowerFlat? HV	Stock108,600	MOSFET (Metal Oxide)	600V	3.3A (Ta), 16A (Tc)	10V	5V @ 250µA	46nC @ 10V	1400pF @ 50V	±25V	-	3W (Ta), 125W (Tc)	215 mOhm @ 8A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	4-PowerFlat? HV
STP9NK60Z	STMicroelectronics	MOSFET N-CH 600V 7A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock310,296	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	4.5V @ 100µA	53nC @ 10V	1110pF @ 25V	±30V	-	125W (Tc)	950 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STU7NF25	STMicroelectronics	MOSFET N-CH 250V IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 72W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock13,968	MOSFET (Metal Oxide)	250V	8A (Tc)	10V	4V @ 250µA	16nC @ 10V	500pF @ 25V	±20V	-	72W (Tc)	420 mOhm @ 4A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA