Page 23 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STW69N65M5
STMicroelectronics

MOSFET N-CH 650V 58A TO-247

Package: TO-247-3

Stock18,192
STFW69N65M5
STMicroelectronics

MOSFET N-CH 650V 58A TO-3PF

Package: TO-3P-3 Full Pack

Stock16,992
STP42N65M5
STMicroelectronics

MOSFET N-CH 650V 33A TO-220

Package: TO-220-3

Stock780,000
STW34N65M5
STMicroelectronics

MOSFET N-CH 650V 28A TO-247

Package: TO-247-3

Stock9,768
STWA20N95K5
STMicroelectronics

MOSFET N-CH 950V 17.5A TO-247

Package: TO-247-3

Stock16,320
STP40N60M2
STMicroelectronics

MOSFET N-CH 600V 34A TO220

Package: TO-220-3

Stock6,624
STP34NM60ND
STMicroelectronics

MOSFET N-CH 600V 29A TO-220AB

Package: TO-220-3

Stock390,348
STP30N65M5
STMicroelectronics

MOSFET N-CH 650V 22A TO220

Package: TO-220-3

Stock37,242
STW56N65M2-4
STMicroelectronics

MOSFET N-CH 650V I2PAKFP

Package: TO-247-4

Stock16,248
STP36N55M5
STMicroelectronics

MOSFET N CH 550V 33A TO-220

Package: TO-220-3

Stock9,564
STP270N8F7
STMicroelectronics

MOSFET N CH 80V 180A TO220

Package: TO-220-3

Stock71,952
STW22N95K5
STMicroelectronics

MOSFET N-CH 950V 17.5A TO-247

Package: TO-247-3

Stock10,500
STP190N55LF3
STMicroelectronics

MOSFET N-CH 55V 120A TO-220

Package: TO-220-3

Stock472,932
STW23N85K5
STMicroelectronics

MOSFET N-CH 850V 19A TO-247

Package: TO-247-3

Stock8,724
STP400N4F6
STMicroelectronics

MOSFET N-CH 40V TO-220

Package: TO-220-3

Stock2,000
STW28NM50N
STMicroelectronics

MOSFET N-CH 500V 21A TO-247

Package: TO-247-3

Stock390,000
STP18NM80
STMicroelectronics

MOSFET N-CH 800V 17A TO-220

Package: TO-220-3

Stock56,784
STP13N95K3
STMicroelectronics

MOSFET N-CH 950V 10A TO-220

Package: TO-220-3

Stock390,000
STW46NF30
STMicroelectronics

MOSFET N-CH 300V 42A TO247

Package: TO-247-3

Stock4,816
STP23NM60ND
STMicroelectronics

MOSFET N-CH 600V 19.5A TO-220

Package: TO-220-3

Stock12,552

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STW69N65M5	STMicroelectronics	MOSFET N-CH 650V 58A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6420pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 29A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock18,192	MOSFET (Metal Oxide)	650V	58A (Tc)	10V	5V @ 250µA	143nC @ 10V	6420pF @ 100V	±25V	-	330W (Tc)	45 mOhm @ 29A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
STFW69N65M5	STMicroelectronics	MOSFET N-CH 650V 58A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6420pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 29A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock16,992	MOSFET (Metal Oxide)	650V	58A (Tc)	10V	5V @ 250µA	143nC @ 10V	6420pF @ 100V	±25V	-	79W (Tc)	45 mOhm @ 29A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
STP42N65M5	STMicroelectronics	MOSFET N-CH 650V 33A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 79 mOhm @ 16.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock780,000	MOSFET (Metal Oxide)	650V	33A (Tc)	10V	5V @ 250µA	100nC @ 10V	4650pF @ 100V	±25V	-	190W (Tc)	79 mOhm @ 16.5A, 10V	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
STW34N65M5	STMicroelectronics	MOSFET N-CH 650V 28A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 14A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock9,768	MOSFET (Metal Oxide)	650V	28A (Tc)	10V	5V @ 250µA	62.5nC @ 10V	2700pF @ 100V	±25V	-	190W (Tc)	110 mOhm @ 14A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
STWA20N95K5	STMicroelectronics	MOSFET N-CH 950V 17.5A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 330 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock16,320	MOSFET (Metal Oxide)	950V	17.5A (Tc)	10V	5V @ 100µA	40nC @ 10V	1500pF @ 100V	±30V	-	250W (Tc)	330 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STP40N60M2	STMicroelectronics	MOSFET N-CH 600V 34A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 88 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,624	MOSFET (Metal Oxide)	600V	34A (Tc)	10V	4V @ 250µA	57nC @ 10V	2500pF @ 100V	±25V	-	250W (Tc)	88 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STP34NM60ND	STMicroelectronics	MOSFET N-CH 600V 29A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2785pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 14.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock390,348	MOSFET (Metal Oxide)	600V	29A (Tc)	10V	5V @ 250µA	80.4nC @ 10V	2785pF @ 50V	±25V	-	190W (Tc)	110 mOhm @ 14.5A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
STP30N65M5	STMicroelectronics	MOSFET N-CH 650V 22A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 139 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock37,242	MOSFET (Metal Oxide)	650V	22A (Tc)	10V	5V @ 250µA	64nC @ 10V	2880pF @ 100V	±25V	-	140W (Tc)	139 mOhm @ 11A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STW56N65M2-4	STMicroelectronics	MOSFET N-CH 650V I2PAKFP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 358W (Tc) Rds On (Max) @ Id, Vgs: 62 mOhm @ 24.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: TO-247-4	Stock16,248	MOSFET (Metal Oxide)	650V	49A (Tc)	10V	4V @ 250µA	93nC @ 10V	3900pF @ 100V	±25V	-	358W (Tc)	62 mOhm @ 24.5A, 10V	150°C (TJ)	Through Hole	TO-247-4L	TO-247-4
STP36N55M5	STMicroelectronics	MOSFET N CH 550V 33A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2670pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 16.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock9,564	MOSFET (Metal Oxide)	550V	33A (Tc)	10V	5V @ 250µA	62nC @ 10V	2670pF @ 100V	±25V	-	190W (Tc)	80 mOhm @ 16.5A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
STP270N8F7	STMicroelectronics	MOSFET N CH 80V 180A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 193nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 315W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock71,952	MOSFET (Metal Oxide)	80V	180A (Tc)	10V	4V @ 250µA	193nC @ 10V	13600pF @ 50V	±20V	-	315W (Tc)	2.5 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
STW22N95K5	STMicroelectronics	MOSFET N-CH 950V 17.5A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 330 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock10,500	MOSFET (Metal Oxide)	950V	17.5A (Tc)	10V	5V @ 100µA	48nC @ 10V	1550pF @ 100V	±30V	-	250W (Tc)	330 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
STP190N55LF3	STMicroelectronics	MOSFET N-CH 55V 120A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 25V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock472,932	MOSFET (Metal Oxide)	55V	120A (Tc)	5V, 10V	2.5V @ 250µA	80nC @ 5V	6200pF @ 25V	±18V	-	312W (Tc)	3.7 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
STW23N85K5	STMicroelectronics	MOSFET N-CH 850V 19A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 275 mOhm @ 9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock8,724	MOSFET (Metal Oxide)	850V	19A (Tc)	10V	5V @ 100µA	38nC @ 10V	1650pF @ 100V	±30V	-	250W (Tc)	275 mOhm @ 9.5A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
STP400N4F6	STMicroelectronics	MOSFET N-CH 40V TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 377nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock2,000	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4.5V @ 250µA	377nC @ 10V	20000pF @ 25V	±20V	-	300W (Tc)	1.7 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
STW28NM50N	STMicroelectronics	MOSFET N-CH 500V 21A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 158 mOhm @ 10.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock390,000	MOSFET (Metal Oxide)	500V	21A (Tc)	10V	4V @ 250µA	50nC @ 10V	1735pF @ 25V	±25V	-	150W (Tc)	158 mOhm @ 10.5A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STP18NM80	STMicroelectronics	MOSFET N-CH 800V 17A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 295 mOhm @ 8.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock56,784	MOSFET (Metal Oxide)	800V	17A (Tc)	10V	5V @ 250µA	70nC @ 10V	2070pF @ 50V	±30V	-	190W (Tc)	295 mOhm @ 8.5A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP13N95K3	STMicroelectronics	MOSFET N-CH 950V 10A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock390,000	MOSFET (Metal Oxide)	950V	10A (Tc)	10V	5V @ 100µA	51nC @ 10V	1620pF @ 100V	±30V	-	190W (Tc)	850 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STW46NF30	STMicroelectronics	MOSFET N-CH 300V 42A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 17A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock4,816	MOSFET (Metal Oxide)	300V	42A (Tc)	10V	4V @ 250µA	90nC @ 10V	3200pF @ 25V	±20V	-	300W (Tc)	75 mOhm @ 17A, 10V	175°C (TJ)	Through Hole	TO-247	TO-247-3
STP23NM60ND	STMicroelectronics	MOSFET N-CH 600V 19.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock12,552	MOSFET (Metal Oxide)	600V	19.5A (Tc)	10V	5V @ 250µA	69nC @ 10V	2100pF @ 50V	±25V	-	150W (Tc)	180 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP185N55F3	STMicroelectronics	MOSFET N-CH 55V 120A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock828,000	MOSFET (Metal Oxide)	55V	120A (Tc)	10V	4V @ 250µA	100nC @ 10V	6800pF @ 25V	±20V	-	330W (Tc)	3.8 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STW21NM60ND	STMicroelectronics	MOSFET N-CH 600V 17A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock5,600	MOSFET (Metal Oxide)	600V	17A (Tc)	10V	5V @ 250µA	60nC @ 10V	1800pF @ 50V	±25V	-	140W (Tc)	220 mOhm @ 8.5A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STF24N60M2	STMicroelectronics	MOSFET N-CH 600V 18A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock20,688	MOSFET (Metal Oxide)	600V	18A (Tc)	10V	4V @ 250µA	29nC @ 10V	1060pF @ 100V	±25V	-	30W (Tc)	190 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF21N65M5	STMicroelectronics	MOSFET N-CH 650V 17A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 8.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock54,960	MOSFET (Metal Oxide)	650V	17A (Tc)	10V	5V @ 250µA	50nC @ 10V	1950pF @ 100V	±25V	-	30W (Tc)	190 mOhm @ 8.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP24NM60N	STMicroelectronics	MOSFET N-CH 600V 17A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock10,668	MOSFET (Metal Oxide)	600V	17A (Tc)	10V	4V @ 250µA	46nC @ 10V	1400pF @ 50V	±30V	-	125W (Tc)	190 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STP21N65M5	STMicroelectronics	MOSFET N-CH 650V 17A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 8.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock50,352	MOSFET (Metal Oxide)	650V	17A (Tc)	10V	5V @ 250µA	50nC @ 10V	1950pF @ 100V	±25V	-	125W (Tc)	190 mOhm @ 8.5A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STW19NM50N	STMicroelectronics	MOSFET N-CH 500V 14A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock34,560	MOSFET (Metal Oxide)	500V	14A (Tc)	10V	4V @ 250µA	34nC @ 10V	1000pF @ 50V	±25V	-	110W (Tc)	250 mOhm @ 7A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW15N80K5	STMicroelectronics	MOSFET N CH 800V 14A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 375 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,060	MOSFET (Metal Oxide)	800V	14A (Tc)	10V	5V @ 100µA	32nC @ 10V	1100pF @ 100V	±30V	-	190W (Tc)	375 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3