Page 76 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STP200NF04L
STMicroelectronics

MOSFET N-CH 40V 120A TO-220

Package: TO-220-3

Stock397,308
STP12NM50N
STMicroelectronics

MOSFET N-CH 500V 11A TO-220

Package: TO-220-3

Stock7,584
STP12NK60Z
STMicroelectronics

MOSFET N-CH 600V 10A TO220

Package: TO-220-3

Stock15,000
STW21NM50N
STMicroelectronics

MOSFET N-CH 500V 18A TO-247

Package: TO-247-3

Stock173,844
STF12NM50N
STMicroelectronics

MOSFET N-CH 500V 11A TO220FP

Package: TO-220-3 Full Pack

Stock716,376
STF21NM50N
STMicroelectronics

MOSFET N-CH 500V 18A TO220FP

Package: TO-220-3 Full Pack

Stock21,252
STL20NM20N
STMicroelectronics

MOSFET N-CH 200V 20A PWRFLAT6X5

Package: 8-PowerVDFN

Stock5,600
STD22NM20NT4
STMicroelectronics

MOSFET N-CH 200V 22A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,020,552
STW25NM50N
STMicroelectronics

MOSFET N-CH 500V 22A TO-247

Package: TO-247-3

Stock35,664
STP25NM50N
STMicroelectronics

MOSFET N-CH 500V 22A TO-220

Package: TO-220-3

Stock8,196
STP10NK50Z
STMicroelectronics

MOSFET N-CH 500V 9A TO-220

Package: TO-220-3

Stock17,316
STF25NM50N
STMicroelectronics

MOSFET N-CH 500V 22A TO220FP

Package: TO-220-3 Full Pack

Stock40,956
STS4DPFS30L
STMicroelectronics

MOSFET P-CH 30V 5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,432
STS25NH3LL-E
STMicroelectronics

MOSFET N-CH 30V 25A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,344
STD2NK70ZT4
STMicroelectronics

MOSFET N-CH 700V 1.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock816,300
STD20N20T4
STMicroelectronics

MOSFET N-CH 200V 18A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock216,000
STB9NK60ZDT4
STMicroelectronics

MOSFET N-CH 600V 7A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock14,820
STB5NK50ZT4
STMicroelectronics

MOSFET N-CH 500V 4.4A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock16,332
STB20NK50ZT4
STMicroelectronics

MOSFET N-CH 500V 17A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock25,068
STW30NM60D
STMicroelectronics

MOSFET N-CH 600V 30A TO-247

Package: TO-247-3

Stock4,464

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STP200NF04L	STMicroelectronics	MOSFET N-CH 40V 120A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock397,308	MOSFET (Metal Oxide)	40V	120A (Tc)	5V, 10V	4V @ 250µA	90nC @ 4.5V	6400pF @ 25V	±16V	-	300W (Tc)	3.8 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP12NM50N	STMicroelectronics	MOSFET N-CH 500V 11A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,584	MOSFET (Metal Oxide)	500V	11A (Tc)	10V	4V @ 250µA	30nC @ 10V	940pF @ 50V	±25V	-	100W (Tc)	380 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP12NK60Z	STMicroelectronics	MOSFET N-CH 600V 10A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 640 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock15,000	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4.5V @ 100µA	59nC @ 10V	1740pF @ 25V	±30V	-	150W (Tc)	640 mOhm @ 5A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STW21NM50N	STMicroelectronics	MOSFET N-CH 500V 18A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock173,844	MOSFET (Metal Oxide)	500V	18A (Tc)	10V	4V @ 250µA	65nC @ 10V	1950pF @ 25V	±25V	-	140W (Tc)	190 mOhm @ 9A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STF12NM50N	STMicroelectronics	MOSFET N-CH 500V 11A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock716,376	MOSFET (Metal Oxide)	500V	11A (Tc)	10V	4V @ 250µA	30nC @ 10V	940pF @ 50V	±25V	-	25W (Tc)	380 mOhm @ 5.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF21NM50N	STMicroelectronics	MOSFET N-CH 500V 18A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock21,252	MOSFET (Metal Oxide)	500V	18A (Tc)	10V	4V @ 250µA	65nC @ 10V	1950pF @ 25V	±25V	-	30W (Tc)	190 mOhm @ 9A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STL20NM20N	STMicroelectronics	MOSFET N-CH 200V 20A PWRFLAT6X5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (6x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock5,600	MOSFET (Metal Oxide)	200V	20A (Tc)	10V	5V @ 250µA	50nC @ 10V	800pF @ 25V	±30V	-	80W (Tc)	105 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (6x5)	8-PowerVDFN
STD22NM20NT4	STMicroelectronics	MOSFET N-CH 200V 22A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 11A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,020,552	MOSFET (Metal Oxide)	200V	22A (Tc)	10V	5V @ 250µA	50nC @ 10V	800pF @ 25V	±20V	-	100W (Tc)	105 mOhm @ 11A, 10V	-65°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STW25NM50N	STMicroelectronics	MOSFET N-CH 500V 22A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock35,664	MOSFET (Metal Oxide)	500V	22A (Tc)	10V	4V @ 250µA	84nC @ 10V	2565pF @ 25V	±25V	-	160W (Tc)	140 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STP25NM50N	STMicroelectronics	MOSFET N-CH 500V 22A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock8,196	MOSFET (Metal Oxide)	500V	22A (Tc)	10V	4V @ 250µA	84nC @ 10V	2565pF @ 25V	±25V	-	160W (Tc)	140 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP10NK50Z	STMicroelectronics	MOSFET N-CH 500V 9A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 39.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1219pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock17,316	MOSFET (Metal Oxide)	500V	9A (Tc)	10V	4.5V @ 100µA	39.2nC @ 10V	1219pF @ 25V	±30V	-	125W (Tc)	700 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STF25NM50N	STMicroelectronics	MOSFET N-CH 500V 22A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock40,956	MOSFET (Metal Oxide)	500V	22A (Tc)	10V	4V @ 250µA	84nC @ 10V	2565pF @ 25V	±25V	-	40W (Tc)	140 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STS4DPFS30L	STMicroelectronics	MOSFET P-CH 30V 5A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Vgs (Max): ±16V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,432	MOSFET (Metal Oxide)	30V	5A (Tc)	4.5V, 10V	2.5V @ 250µA	16nC @ 5V	1350pF @ 25V	±16V	Schottky Diode (Isolated)	2.5W (Tc)	55 mOhm @ 2.5A, 10V	150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STS25NH3LL-E	STMicroelectronics	MOSFET N-CH 30V 25A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4450pF @ 25V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 3.2W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,344	MOSFET (Metal Oxide)	30V	25A (Tc)	4.5V, 10V	1V @ 250µA	40nC @ 4.5V	4450pF @ 25V	±18V	-	3.2W (Tc)	3.5 mOhm @ 12.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STD2NK70ZT4	STMicroelectronics	MOSFET N-CH 700V 1.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 11.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 7 Ohm @ 800mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock816,300	MOSFET (Metal Oxide)	700V	1.6A (Tc)	10V	4.5V @ 50µA	11.4nC @ 10V	280pF @ 25V	±30V	-	45W (Tc)	7 Ohm @ 800mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STD20N20T4	STMicroelectronics	MOSFET N-CH 200V 18A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 10A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock216,000	MOSFET (Metal Oxide)	200V	18A (Tc)	10V	4V @ 250µA	39nC @ 10V	940pF @ 25V	±20V	-	90W (Tc)	125 mOhm @ 10A, 10V	-	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STB9NK60ZDT4	STMicroelectronics	MOSFET N-CH 600V 7A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock14,820	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	4.5V @ 100µA	53nC @ 10V	1110pF @ 25V	±30V	-	125W (Tc)	950 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB5NK50ZT4	STMicroelectronics	MOSFET N-CH 500V 4.4A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock16,332	MOSFET (Metal Oxide)	500V	4.4A (Tc)	10V	4.5V @ 50µA	28nC @ 10V	535pF @ 25V	±30V	-	70W (Tc)	1.5 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB20NK50ZT4	STMicroelectronics	MOSFET N-CH 500V 17A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 8.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock25,068	MOSFET (Metal Oxide)	500V	17A (Tc)	10V	4.5V @ 100µA	119nC @ 10V	2600pF @ 25V	±30V	-	190W (Tc)	270 mOhm @ 8.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STW30NM60D	STMicroelectronics	MOSFET N-CH 600V 30A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 145 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,464	MOSFET (Metal Oxide)	600V	30A (Tc)	10V	5V @ 250µA	115nC @ 10V	2520pF @ 25V	±30V	-	312W (Tc)	145 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW29NK50Z	STMicroelectronics	MOSFET N-CH 500V 31A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 266nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6110pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 350W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 15.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock101,256	MOSFET (Metal Oxide)	500V	31A (Tc)	10V	4.5V @ 150µA	266nC @ 10V	6110pF @ 25V	±30V	-	350W (Tc)	130 mOhm @ 15.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW28NK60Z	STMicroelectronics	MOSFET N-CH 600V 27A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 264nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6350pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 350W (Tc) Rds On (Max) @ Id, Vgs: 185 mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock86,592	MOSFET (Metal Oxide)	600V	27A (Tc)	10V	4.5V @ 150µA	264nC @ 10V	6350pF @ 25V	±30V	-	350W (Tc)	185 mOhm @ 13.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STP20NM60A	STMicroelectronics	MOSFET N-CH 650V 20A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,488	MOSFET (Metal Oxide)	650V	20A (Tc)	10V	4V @ 250µA	60nC @ 10V	1630pF @ 25V	±30V	-	192W (Tc)	290 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STW18NK80Z	STMicroelectronics	MOSFET N-CH 800V 19A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 350W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock111,264	MOSFET (Metal Oxide)	800V	19A (Tc)	10V	4.5V @ 150µA	250nC @ 10V	6100pF @ 25V	±30V	-	350W (Tc)	380 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW18NK60Z	STMicroelectronics	MOSFET N-CH 600V 16A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock14,688	MOSFET (Metal Oxide)	600V	16A (Tc)	10V	4.5V @ 100µA	170nC @ 10V	3540pF @ 25V	±30V	-	230W (Tc)	360 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STP11NM60A	STMicroelectronics	MOSFET N-CH 600V 11A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1211pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock15,600	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4V @ 250µA	49nC @ 10V	1211pF @ 25V	±30V	-	110W (Tc)	450 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP40N20	STMicroelectronics	MOSFET N-CH 200V 40A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock64,716	MOSFET (Metal Oxide)	200V	40A (Tc)	10V	4V @ 250µA	75nC @ 10V	2500pF @ 25V	±20V	-	160W (Tc)	45 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP5NK90Z	STMicroelectronics	MOSFET N-CH 900V 4.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 41.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,400	MOSFET (Metal Oxide)	900V	4.5A (Tc)	10V	4.5V @ 100µA	41.5nC @ 10V	1160pF @ 25V	±30V	-	125W (Tc)	2.5 Ohm @ 2.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3