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STMicroelectronics |
MOSFET N-CH 500V 10.5A ISOWAT218
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOWATT-218
- Package / Case: ISOWATT-218-3
|
Package: ISOWATT-218-3 |
Stock121,320 |
|
MOSFET (Metal Oxide) | 500V | 10.5A (Tc) | 10V | 5V @ 250µA | 80nC @ 10V | 3400pF @ 25V | ±30V | - | 80W (Tc) | 360 mOhm @ 7.5A, 10V | 150°C (TJ) | Through Hole | ISOWATT-218 | ISOWATT-218-3 |
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STMicroelectronics |
MOSFET N-CH 100V 10A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock392,520 |
|
MOSFET (Metal Oxide) | 100V | 10A (Tc) | 10V | 4V @ 250µA | 22nC @ 10V | 460pF @ 25V | ±20V | - | 60W (Tc) | 270 mOhm @ 7A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 800V 4A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 2A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock93,324 |
|
MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 5V @ 250µA | 29nC @ 10V | 920pF @ 25V | ±30V | - | 100W (Tc) | 3.3 Ohm @ 2A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 100V 14A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock72,108 |
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MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 4V @ 250µA | 21nC @ 10V | 458pF @ 25V | ±20V | - | 60W (Tc) | 160 mOhm @ 7A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 60V 80A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 40A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock71,400 |
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MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 4V @ 250µA | 140nC @ 10V | 10000pF @ 25V | ±20V | - | 150W (Tc) | 10 mOhm @ 40A, 10V | 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 13A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 540 mOhm @ 6.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock7,824 |
|
MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 5V @ 250µA | 82nC @ 10V | 2600pF @ 25V | ±30V | - | 190W (Tc) | 540 mOhm @ 6.5A, 10V | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 60V 60A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 30A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock337,596 |
|
MOSFET (Metal Oxide) | 60V | 60A (Tc) | 10V | 4V @ 250µA | 160nC @ 10V | 6200pF @ 25V | ±20V | - | 150W (Tc) | 16 mOhm @ 30A, 10V | 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 5A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 884pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 2.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock61,092 |
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MOSFET (Metal Oxide) | 600V | 5A (Tc) | 10V | 5V @ 250µA | 30nC @ 10V | 884pF @ 25V | ±30V | - | 100W (Tc) | 2 Ohm @ 2.5A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 60V 20A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock35,508 |
|
MOSFET (Metal Oxide) | 60V | 20A (Tc) | 5V, 10V | 1V @ 250µA | 20nC @ 5V | 800pF @ 25V | ±20V | - | 70W (Tc) | 70 mOhm @ 10A, 10V | 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 60V 45A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 22.5A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock16,560 |
|
MOSFET (Metal Oxide) | 60V | 45A (Tc) | 10V | 4V @ 250µA | 80nC @ 10V | 3600pF @ 25V | ±20V | - | 100W (Tc) | 28 mOhm @ 22.5A, 10V | 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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|
STMicroelectronics |
MOSFET N-CH 600V 7.2A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1625pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.6A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock451,032 |
|
MOSFET (Metal Oxide) | 600V | 7.2A (Tc) | 10V | 5V @ 250µA | 45nC @ 10V | 1625pF @ 25V | ±30V | - | 125W (Tc) | 1.2 Ohm @ 3.6A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 200V 18A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 9A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock644,952 |
|
MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 4V @ 250µA | 72nC @ 10V | 1560pF @ 25V | ±20V | - | 125W (Tc) | 180 mOhm @ 9A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
STMicroelectronics |
MOSFET N-CH 100V 22A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Rds On (Max) @ Id, Vgs: 77 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock4,448 |
|
MOSFET (Metal Oxide) | 100V | 22A (Tc) | 10V | 4V @ 250µA | 41nC @ 10V | 870pF @ 25V | ±20V | - | 85W (Tc) | 77 mOhm @ 11A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 400V 5.5A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock18,048 |
|
MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 4V @ 250µA | 24nC @ 10V | 530pF @ 25V | ±20V | - | 100W (Tc) | 1 Ohm @ 3A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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STMicroelectronics |
MOSFET N-CH 500V 14A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock14,988 |
|
MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 4V @ 250µA | 90nC @ 10V | 2000pF @ 25V | ±30V | - | 190W (Tc) | 380 mOhm @ 7A, 10V | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 500V 18.4A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 220W (Tc)
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 9A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock15,828 |
|
MOSFET (Metal Oxide) | 500V | 18.4A (Tc) | 10V | 4V @ 250µA | 128nC @ 10V | 2980pF @ 25V | ±30V | - | 220W (Tc) | 270 mOhm @ 9A, 10V | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
STMicroelectronics |
MOSFET N-CH 500V 4A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock286,812 |
|
MOSFET (Metal Oxide) | 500V | 4A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 315pF @ 25V | ±30V | - | 80W (Tc) | 3 Ohm @ 1.5A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
STMicroelectronics |
MOSFET N-CH 500V 4.5A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock60,156 |
|
MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 4V @ 250µA | 30nC @ 10V | 610pF @ 25V | ±20V | - | 100W (Tc) | 1.5 Ohm @ 2.7A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
STMicroelectronics |
MOSFET N-CH 500V 8A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 832pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 850 mOhm @ 3.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock248,820 |
|
MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 4V @ 250µA | 39nC @ 10V | 832pF @ 25V | ±20V | - | 125W (Tc) | 850 mOhm @ 3.5A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
STMicroelectronics |
MOSFET N-CH 50V 23A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 14A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock161,328 |
|
MOSFET (Metal Oxide) | 50V | 23A (Tc) | 10V | 4V @ 1mA | - | 900pF @ 25V | ±20V | - | 75W (Tc) | 70 mOhm @ 14A, 10V | 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
STMicroelectronics |
MOSFET P-CH 60V 12A TO-220
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock1,677,120 |
|
MOSFET (Metal Oxide) | 60V | 12A (Tc) | 10V | 4V @ 250µA | 21nC @ 10V | 850pF @ 25V | ±20V | - | 60W (Tc) | 200 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
STMicroelectronics |
MOSFET N-CH 500V 3.8A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 1.9A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock95,460 |
|
MOSFET (Metal Oxide) | 500V | 3.8A (Tc) | 10V | 4V @ 250µA | 21nC @ 10V | 400pF @ 25V | ±30V | - | 80W (Tc) | 2.8 Ohm @ 1.9A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
STMicroelectronics |
MOSFET N-CH 500V 45A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 417W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 22.5A, 10V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock38,988 |
|
MOSFET (Metal Oxide) | 500V | 45A (Tc) | 10V | 5V @ 250µA | 120nC @ 10V | 3600pF @ 25V | ±30V | - | 417W (Tc) | 100 mOhm @ 22.5A, 10V | -65°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
STMicroelectronics |
MOSFET N-CH 400V 4.7A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 2.3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock96,276 |
|
MOSFET (Metal Oxide) | 400V | 4.7A (Tc) | 10V | 5V @ 250µA | 20nC @ 10V | 405pF @ 25V | ±30V | - | 80W (Tc) | 1.8 Ohm @ 2.3A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
STMicroelectronics |
MOSFET N-CH 200V 50A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 280W (Tc)
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 25A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock95,136 |
|
MOSFET (Metal Oxide) | 200V | 50A (Tc) | 10V | 5V @ 250µA | 115nC @ 10V | 3400pF @ 25V | ±30V | - | 280W (Tc) | 55 mOhm @ 25A, 10V | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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|
STMicroelectronics |
MOSFET N-CH 500V 14.6A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 14.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock4,800 |
|
MOSFET (Metal Oxide) | 500V | 14.6A (Tc) | 10V | 5V @ 250µA | 80nC @ 10V | 3400pF @ 25V | ±30V | - | 190W (Tc) | 360 mOhm @ 7.5A, 10V | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 500V 20A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock59,688 |
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MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 5V @ 250µA | 110nC @ 10V | 4700pF @ 25V | ±30V | - | 250W (Tc) | 250 mOhm @ 10A, 10V | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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|
STMicroelectronics |
MOSFET N-CH 200V 34A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 17A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock65,112 |
|
MOSFET (Metal Oxide) | 200V | 34A (Tc) | 10V | 5V @ 250µA | 80nC @ 10V | 3300pF @ 25V | ±30V | - | 180W (Tc) | 75 mOhm @ 17A, 10V | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |