Page 74 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STV160NF02LT4
STMicroelectronics

MOSFET N-CH 20V 160A POWERSO-10

Package: PowerSO-10 Exposed Bottom Pad

Stock3,936
STT4PF20V
STMicroelectronics

MOSFET P-CH 20V 3A SOT-23-6

Package: SOT-23-6

Stock755,040
STS9NF30L
STMicroelectronics

MOSFET N-CH 30V 9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock981,336
STS5PF20V
STMicroelectronics

MOSFET P-CH 20V 5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,632
STS4DNFS30L
STMicroelectronics

MOSFET N-CH 30V 4A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock915,120
STS2DPFS20V
STMicroelectronics

MOSFET P-CH 20V 2.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock176,196
STS17NF3LL
STMicroelectronics

MOSFET N-CH 30V 17A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock409,524
STS12NF30L
STMicroelectronics

MOSFET N-CH 30V 12A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock933,288
STP5NK40Z
STMicroelectronics

MOSFET N-CH 400V 3A TO-220

Package: TO-220-3

Stock6,256
STP4NK50Z
STMicroelectronics

MOSFET N-CH 500V 3A TO-220

Package: TO-220-3

Stock17,340
STP16NS25
STMicroelectronics

MOSFET N-CH 250V 16A TO-220

Package: TO-220-3

Stock27,024
STP11NM60FP
STMicroelectronics

MOSFET N-CH 600V 11A TO220FP

Package: TO-220-3 Full Pack

Stock134,424
STN1N20
STMicroelectronics

MOSFET N-CH 200V 1A SOT223

Package: TO-261-4, TO-261AA

Stock734,496
STD70NH02LT4
STMicroelectronics

MOSFET N-CH 24V 60A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock324,612
STD60NH03L-1
STMicroelectronics

MOSFET N-CH 30V 60A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,944
STD38NH02LT4
STMicroelectronics

MOSFET N-CH 24V 38A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,215,948
IRF620
STMicroelectronics

MOSFET N-CH 200V 6A TO-220

Package: TO-220-3

Stock1,138,680
2N7002
STMicroelectronics

MOSFET N-CH 60V 0.2A SOT-23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock33,950,724
2N7000
STMicroelectronics

MOSFET N-CH 60V 350MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock8,016,720
IRF740
STMicroelectronics

MOSFET N-CH 400V 10A TO-220

Package: TO-220-3

Stock24,960

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STV160NF02LT4	STMicroelectronics	MOSFET N-CH 20V 160A POWERSO-10 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 15V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 80A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PowerSO Package / Case: PowerSO-10 Exposed Bottom Pad	Package: PowerSO-10 Exposed Bottom Pad	Stock3,936	MOSFET (Metal Oxide)	20V	160A (Tc)	5V, 10V	1V @ 250µA	160nC @ 10V	4800pF @ 15V	±15V	-	210W (Tc)	2.5 mOhm @ 80A, 10V	175°C (TJ)	Surface Mount	10-PowerSO	PowerSO-10 Exposed Bottom Pad
STT4PF20V	STMicroelectronics	MOSFET P-CH 20V 3A SOT-23-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	Package: SOT-23-6	Stock755,040	MOSFET (Metal Oxide)	20V	3A (Tc)	2.7V, 4.5V	600mV @ 250µA	7.8nC @ 4.5V	500pF @ 15V	±10V	-	1.6W (Tc)	110 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
STS9NF30L	STMicroelectronics	MOSFET N-CH 30V 9A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 25V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock981,336	MOSFET (Metal Oxide)	30V	9A (Tc)	5V, 10V	1V @ 250µA	12.5nC @ 4.5V	730pF @ 25V	±18V	-	2.5W (Tc)	20 mOhm @ 4.5A, 10V	150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STS5PF20V	STMicroelectronics	MOSFET P-CH 20V 5A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 412pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,632	MOSFET (Metal Oxide)	20V	5A (Tc)	2.5V, 4.5V	450mV @ 250µA	6nC @ 2.5V	412pF @ 15V	±8V	-	2.5W (Tc)	80 mOhm @ 2.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STS4DNFS30L	STMicroelectronics	MOSFET N-CH 30V 4A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±16V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock915,120	MOSFET (Metal Oxide)	30V	4A (Tc)	5V, 10V	1V @ 250µA	9nC @ 5V	330pF @ 25V	±16V	Schottky Diode (Isolated)	2W (Tc)	55 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STS2DPFS20V	STMicroelectronics	MOSFET P-CH 20V 2.5A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock176,196	MOSFET (Metal Oxide)	20V	2.5A (Tc)	2.7V, 4.5V	600mV @ 250µA	4.7nC @ 4.5V	315pF @ 15V	±12V	Schottky Diode (Isolated)	2W (Tc)	200 mOhm @ 1A, 4.5V	150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STS17NF3LL	STMicroelectronics	MOSFET N-CH 30V 17A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 25V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 3.2W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock409,524	MOSFET (Metal Oxide)	30V	17A (Tc)	4.5V, 10V	1V @ 250µA	35nC @ 4.5V	2160pF @ 25V	±18V	-	3.2W (Tc)	5.5 mOhm @ 8.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STS12NF30L	STMicroelectronics	MOSFET N-CH 30V 12A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock933,288	MOSFET (Metal Oxide)	30V	12A (Tc)	4.5V, 10V	1V @ 250µA	50nC @ 4.5V	2400pF @ 25V	±16V	-	2.5W (Ta)	9 mOhm @ 6A, 10V	150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STP5NK40Z	STMicroelectronics	MOSFET N-CH 400V 3A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,256	MOSFET (Metal Oxide)	400V	3A (Tc)	10V	4.5V @ 50µA	17nC @ 10V	305pF @ 25V	±30V	-	45W (Tc)	1.8 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP4NK50Z	STMicroelectronics	MOSFET N-CH 500V 3A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock17,340	MOSFET (Metal Oxide)	500V	3A (Tc)	10V	4.5V @ 50µA	12nC @ 10V	310pF @ 25V	±30V	-	45W (Tc)	2.7 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP16NS25	STMicroelectronics	MOSFET N-CH 250V 16A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 8A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock27,024	MOSFET (Metal Oxide)	250V	16A (Tc)	10V	4V @ 250µA	83nC @ 10V	1270pF @ 25V	±20V	-	140W (Tc)	280 mOhm @ 8A, 10V	-65°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP11NM60FP	STMicroelectronics	MOSFET N-CH 600V 11A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock134,424	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	5V @ 250µA	30nC @ 10V	1000pF @ 25V	±30V	-	35W (Tc)	450 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STN1N20	STMicroelectronics	MOSFET N-CH 200V 1A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 206pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.9W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock734,496	MOSFET (Metal Oxide)	200V	1A (Tc)	10V	5V @ 250µA	15.7nC @ 10V	206pF @ 25V	±20V	-	2.9W (Tc)	1.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
STD70NH02LT4	STMicroelectronics	MOSFET N-CH 24V 60A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock324,612	MOSFET (Metal Oxide)	24V	60A (Tc)	5V, 10V	1.8V @ 250µA	22nC @ 10V	2050pF @ 25V	±20V	-	70W (Tc)	8 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STD60NH03L-1	STMicroelectronics	MOSFET N-CH 30V 60A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,944	MOSFET (Metal Oxide)	30V	60A (Tc)	5V, 10V	1V @ 250µA	21nC @ 5V	2200pF @ 25V	±20V	-	70W (Tc)	9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STD38NH02LT4	STMicroelectronics	MOSFET N-CH 24V 38A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,215,948	MOSFET (Metal Oxide)	24V	38A (Tc)	5V, 10V	2.5V @ 250µA	24nC @ 10V	1070pF @ 25V	±20V	-	40W (Tc)	13.5 mOhm @ 19A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF620	STMicroelectronics	MOSFET N-CH 200V 6A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 3A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock1,138,680	MOSFET (Metal Oxide)	200V	6A (Tc)	10V	4V @ 250µA	27nC @ 10V	350pF @ 25V	±20V	-	70W (Tc)	800 mOhm @ 3A, 10V	-65°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
2N7002	STMicroelectronics	MOSFET N-CH 60V 0.2A SOT-23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 25V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 350mW (Tc) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock33,950,724	MOSFET (Metal Oxide)	60V	200mA (Tc)	4.5V, 10V	3V @ 250µA	2nC @ 5V	43pF @ 25V	±18V	-	350mW (Tc)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
2N7000	STMicroelectronics	MOSFET N-CH 60V 350MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 25V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock8,016,720	MOSFET (Metal Oxide)	60V	350mA (Tc)	4.5V, 10V	3V @ 250µA	2nC @ 5V	43pF @ 25V	±18V	-	1W (Tc)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
IRF740	STMicroelectronics	MOSFET N-CH 400V 10A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 5.3A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock24,960	MOSFET (Metal Oxide)	400V	10A (Tc)	10V	4V @ 250µA	43nC @ 10V	1400pF @ 25V	±20V	-	125W (Tc)	550 mOhm @ 5.3A, 10V	-65°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STD1HNC60T4	STMicroelectronics	MOSFET N-CH 600V 2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 228pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock210,024	MOSFET (Metal Oxide)	600V	2A (Tc)	10V	4V @ 250µA	15.5nC @ 10V	228pF @ 25V	±30V	-	50W (Tc)	5 Ohm @ 1A, 10V	150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STS25NH3LL	STMicroelectronics	MOSFET N-CH 30V 25A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4450pF @ 25V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 3.2W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock268,116	MOSFET (Metal Oxide)	30V	25A (Tc)	4.5V, 10V	1V @ 250µA	40nC @ 4.5V	4450pF @ 25V	±18V	-	3.2W (Tc)	3.5 mOhm @ 12.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STD50NH02LT4	STMicroelectronics	MOSFET N-CH 24V 50A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock819,912	MOSFET (Metal Oxide)	24V	50A (Tc)	5V, 10V	1.8V @ 250µA	24nC @ 10V	1400pF @ 25V	±20V	-	60W (Tc)	10.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STD10PF06T4	STMicroelectronics	MOSFET P-CH 60V 10A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 5A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,379,100	MOSFET (Metal Oxide)	60V	10A (Tc)	10V	4V @ 250µA	21nC @ 10V	850pF @ 25V	±20V	-	40W (Tc)	200 mOhm @ 5A, 10V	175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STW80NE06-10	STMicroelectronics	MOSFET N-CH 60V 80A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 189nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock18,852	MOSFET (Metal Oxide)	60V	80A (Tc)	10V	4V @ 250µA	189nC @ 10V	7600pF @ 25V	±20V	-	250W (Tc)	10 mOhm @ 40A, 10V	175°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW11NB80	STMicroelectronics	MOSFET N-CH 800V 11A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock107,148	MOSFET (Metal Oxide)	800V	11A (Tc)	10V	5V @ 250µA	70nC @ 10V	2900pF @ 25V	±30V	-	190W (Tc)	800 mOhm @ 5.5A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STP50NE08	STMicroelectronics	MOSFET N-CH 80V 50A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 25A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock518,400	MOSFET (Metal Oxide)	80V	50A (Tc)	10V	4V @ 250µA	110nC @ 10V	5100pF @ 25V	±20V	-	150W (Tc)	24 mOhm @ 25A, 10V	175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP6NB90	STMicroelectronics	MOSFET N-CH 900V 5.8A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock55,620	MOSFET (Metal Oxide)	900V	5.8A (Tc)	10V	5V @ 250µA	55nC @ 10V	1400pF @ 25V	±30V	-	135W (Tc)	2 Ohm @ 3A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3