Page 75 - STMicroelectronics Products - Transistors - FETs, MOSFETs - Single

STP16NK60Z
STMicroelectronics

MOSFET N-CH 600V 14A TO-220

Package: TO-220-3

Stock158,988
STW40N20
STMicroelectronics

MOSFET N-CH 200V 40A TO-247

Package: TO-247-3

Stock4,608
STF9NK60ZD
STMicroelectronics

MOSFET N-CH 600V 7A TO220FP

Package: TO-220-3 Full Pack

Stock5,440
STP9NK60ZD
STMicroelectronics

MOSFET N-CH 600V 7A TO-220

Package: TO-220-3

Stock60,120
STP80NF03L
STMicroelectronics

MOSFET N-CH 30V 80A TO-220

Package: TO-220-3

Stock119,988
STF3HNK90Z
STMicroelectronics

MOSFET N-CH 800V 3A TO220FP

Package: TO-220-3 Full Pack

Stock183,936
STP6NK50Z
STMicroelectronics

MOSFET N-CH 500V 5.6A TO-220

Package: TO-220-3

Stock19,236
STF20N20
STMicroelectronics

MOSFET N-CH 200V 18A TO220FP

Package: TO-220-3 Full Pack

Stock3,520
STP20N20
STMicroelectronics

MOSFET N-CH 200V 18A TO-220

Package: TO-220-3

Stock780,000
STF20NF06
STMicroelectronics

MOSFET N-CH 60V 20A TO220FP

Package: TO-220-3 Full Pack

Stock498,492
STP2NK60Z
STMicroelectronics

MOSFET N-CH 600V 1.4A TO-220

Package: TO-220-3

Stock256,452
STS12NH3LL
STMicroelectronics

MOSFET N-CH 30V 12A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,635,192
STS10PF30L
STMicroelectronics

MOSFET P-CH 30V 10A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock75,636
STN3PF06
STMicroelectronics

MOSFET P-CH 60V 2.5A SOT223

Package: TO-261-4, TO-261AA

Stock679,716
STD55NH2LLT4
STMicroelectronics

MOSFET N-CH 24V 40A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock390,000
STB16PF06LT4
STMicroelectronics

MOSFET P-CH 60V 16A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock60,192
STW220NF75
STMicroelectronics

MOSFET N-CH 75V 120A TO-247

Package: TO-247-3

Stock94,896
STB16NK65Z-S
STMicroelectronics

MOSFET N-CH 650V 13A I2SPAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock17,112
STW20NK70Z
STMicroelectronics

MOSFET N-CH 700V 20A TO-247

Package: TO-247-3

Stock53,784
STW16NK60Z
STMicroelectronics

MOSFET N-CH 600V 14A TO-247

Package: TO-247-3

Stock5,088

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
STP16NK60Z	STMicroelectronics	MOSFET N-CH 600V 14A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock158,988	MOSFET (Metal Oxide)	600V	14A (Tc)	10V	4.5V @ 50µA	86nC @ 10V	2650pF @ 25V	±30V	-	190W (Tc)	420 mOhm @ 7A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STW40N20	STMicroelectronics	MOSFET N-CH 200V 40A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,608	MOSFET (Metal Oxide)	200V	40A (Tc)	10V	4V @ 250µA	75nC @ 10V	2500pF @ 25V	±20V	-	160W (Tc)	45 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STF9NK60ZD	STMicroelectronics	MOSFET N-CH 600V 7A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,440	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	4.5V @ 100µA	53nC @ 10V	1110pF @ 25V	±30V	-	30W (Tc)	950 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP9NK60ZD	STMicroelectronics	MOSFET N-CH 600V 7A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock60,120	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	4.5V @ 100µA	53nC @ 10V	1110pF @ 25V	±30V	-	125W (Tc)	950 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP80NF03L	STMicroelectronics	MOSFET N-CH 30V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock119,988	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2.5V @ 250µA	110nC @ 4.5V	5500pF @ 25V	±20V	-	300W (Tc)	4.5 mOhm @ 40A, 10V	175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STF3HNK90Z	STMicroelectronics	MOSFET N-CH 800V 3A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 4.2 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock183,936	MOSFET (Metal Oxide)	800V	3A (Tc)	10V	4.5V @ 50µA	35nC @ 10V	690pF @ 25V	±30V	-	25W (Tc)	4.2 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP6NK50Z	STMicroelectronics	MOSFET N-CH 500V 5.6A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 24.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock19,236	MOSFET (Metal Oxide)	500V	5.6A (Tc)	10V	4.5V @ 50µA	24.6nC @ 10V	690pF @ 25V	±30V	-	90W (Tc)	1.2 Ohm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STF20N20	STMicroelectronics	MOSFET N-CH 200V 18A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,520	MOSFET (Metal Oxide)	200V	18A (Ta)	10V	4V @ 250µA	39nC @ 10V	940pF @ 25V	±20V	-	25W (Tc)	125 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP20N20	STMicroelectronics	MOSFET N-CH 200V 18A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 10A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock780,000	MOSFET (Metal Oxide)	200V	18A (Tc)	10V	4V @ 250µA	39nC @ 10V	940pF @ 25V	±20V	-	90W (Tc)	125 mOhm @ 10A, 10V	-50°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STF20NF06	STMicroelectronics	MOSFET N-CH 60V 20A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock498,492	MOSFET (Metal Oxide)	60V	20A (Tc)	10V	4V @ 250µA	18nC @ 10V	400pF @ 25V	±20V	-	28W (Tc)	70 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP2NK60Z	STMicroelectronics	MOSFET N-CH 600V 1.4A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 8 Ohm @ 700mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock256,452	MOSFET (Metal Oxide)	600V	1.4A (Tc)	10V	4.5V @ 50µA	10nC @ 10V	170pF @ 25V	±30V	-	45W (Tc)	8 Ohm @ 700mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STS12NH3LL	STMicroelectronics	MOSFET N-CH 30V 12A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 965pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.7W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,635,192	MOSFET (Metal Oxide)	30V	12A (Tc)	4.5V, 10V	1V @ 250µA	12nC @ 4.5V	965pF @ 25V	±16V	-	2.7W (Tc)	10.5 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STS10PF30L	STMicroelectronics	MOSFET P-CH 30V 10A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock75,636	MOSFET (Metal Oxide)	30V	10A (Tc)	4.5V, 10V	1V @ 250µA	39nC @ 4.5V	2300pF @ 25V	±16V	-	2.5W (Tc)	14 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STN3PF06	STMicroelectronics	MOSFET P-CH 60V 2.5A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 1.5A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock679,716	MOSFET (Metal Oxide)	60V	2.5A (Tc)	10V	4V @ 250µA	21nC @ 10V	850pF @ 25V	±20V	-	2.5W (Tc)	220 mOhm @ 1.5A, 10V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
STD55NH2LLT4	STMicroelectronics	MOSFET N-CH 24V 40A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock390,000	MOSFET (Metal Oxide)	24V	40A (Tc)	4.5V, 10V	1V @ 250µA	11nC @ 4.5V	990pF @ 25V	±16V	-	60W (Tc)	11 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STB16PF06LT4	STMicroelectronics	MOSFET P-CH 60V 16A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock60,192	MOSFET (Metal Oxide)	60V	16A (Tc)	5V, 10V	1.5V @ 100µA	15.5nC @ 4.5V	630pF @ 25V	±16V	-	70W (Tc)	125 mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STW220NF75	STMicroelectronics	MOSFET N-CH 75V 120A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock94,896	MOSFET (Metal Oxide)	75V	120A (Tc)	10V	4V @ 250µA	430nC @ 10V	12500pF @ 25V	±20V	-	500W (Tc)	4.4 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
STB16NK65Z-S	STMicroelectronics	MOSFET N-CH 650V 13A I2SPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2750pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock17,112	MOSFET (Metal Oxide)	650V	13A (Tc)	10V	4.5V @ 100µA	89nC @ 10V	2750pF @ 25V	±30V	-	190W (Tc)	500 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STW20NK70Z	STMicroelectronics	MOSFET N-CH 700V 20A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 350W (Tc) Rds On (Max) @ Id, Vgs: 285 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock53,784	MOSFET (Metal Oxide)	700V	20A (Tc)	10V	4.5V @ 150µA	185nC @ 10V	6000pF @ 25V	±30V	-	350W (Tc)	285 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW16NK60Z	STMicroelectronics	MOSFET N-CH 600V 14A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock5,088	MOSFET (Metal Oxide)	600V	14A (Tc)	10V	4.5V @ 50µA	86nC @ 10V	2650pF @ 25V	±30V	-	190W (Tc)	420 mOhm @ 7A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STS1HNK60	STMicroelectronics	MOSFET N-CH 600V 300MA 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 156pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 500mA, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,333,724	MOSFET (Metal Oxide)	600V	300mA (Tc)	10V	3.7V @ 250µA	10nC @ 10V	156pF @ 25V	±30V	-	2W (Tc)	8.5 Ohm @ 500mA, 10V	-65°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STD50NH02L-1	STMicroelectronics	MOSFET N-CH 24V 50A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock265,116	MOSFET (Metal Oxide)	24V	50A (Tc)	5V, 10V	1.8V @ 250µA	24nC @ 10V	1400pF @ 25V	±20V	-	60W (Tc)	10.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STB80NF55-08-1	STMicroelectronics	MOSFET N-CH 55V 80A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,464	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 250µA	155nC @ 10V	3850pF @ 25V	±20V	-	300W (Tc)	8 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STB200NF04-1	STMicroelectronics	MOSFET N-CH 40V 120A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock96,240	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4V @ 250µA	210nC @ 10V	5100pF @ 25V	±20V	-	310W (Tc)	3.7 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STW80NF06	STMicroelectronics	MOSFET N-CH 60V 80A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock3,312	MOSFET (Metal Oxide)	60V	80A (Tc)	10V	4V @ 250µA	150nC @ 10V	3850pF @ 25V	±20V	-	300W (Tc)	8 mOhm @ 40A, 10V	175°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW26NM60	STMicroelectronics	MOSFET N-CH 600V 30A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 313W (Tc) Rds On (Max) @ Id, Vgs: 135 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock31,416	MOSFET (Metal Oxide)	600V	30A (Tc)	10V	5V @ 250µA	102nC @ 10V	2900pF @ 25V	±30V	-	313W (Tc)	135 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW20NM50	STMicroelectronics	MOSFET N-CH 550V 20A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock43,896	MOSFET (Metal Oxide)	550V	20A (Tc)	10V	5V @ 250µA	56nC @ 10V	1480pF @ 25V	±30V	-	214W (Tc)	250 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STW14NM50	STMicroelectronics	MOSFET N-CH 550V 14A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 175W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock94,188	MOSFET (Metal Oxide)	550V	14A (Tc)	10V	5V @ 250µA	38nC @ 10V	1000pF @ 25V	±30V	-	175W (Tc)	350 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3