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Vishay Siliconix |
MOSFET N-CH 30V 40.6A/60A PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 40.6A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4735 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 40.6A (Ta), 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 135 nC @ 10 V | 4735 pF @ 15 V | ±20V | Schottky Diode (Body) | 6.25W (Ta), 104W (Tc) | 2.1mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 20V 1.5A SC70-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 625mW (Ta)
- Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6
- Package / Case: 6-TSSOP, SC-88, SOT-363
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Package: - |
Stock57,729 |
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MOSFET (Metal Oxide) | 20 V | 1.5A (Ta) | 2.5V, 4.5V | 1.3V @ 250µA | 4.5 nC @ 4.5 V | - | ±12V | - | 625mW (Ta) | 150mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 | 6-TSSOP, SC-88, SOT-363 |
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Vishay Siliconix |
P-CHANNEL 40-V (D-S) 175C MOSFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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Package: - |
Stock8,541 |
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MOSFET (Metal Oxide) | 40 V | 40A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 57 nC @ 10 V | 2030 pF @ 20 V | ±20V | - | 83W (Tc) | 29mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 60V 100A TO252AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock3,525 |
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MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 90 nC @ 10 V | 6100 pF @ 25 V | ±20V | - | 107W (Tc) | 4mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
N-CHANNEL 200-V (D-S) 175C MOSFE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 200 V | 22.5A (Tc) | 7.5V, 10V | 3.5V @ 250µA | 27 nC @ 10 V | 1300 pF @ 25 V | ±20V | - | 68W (Tc) | 50mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
P-CHANNEL 30-V (D-S) MOSFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock14,805 |
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MOSFET (Metal Oxide) | 30 V | 3.1A (Ta) | 4.5V, 10V | 3V @ 250µA | 21 nC @ 10 V | 540 pF @ 15 V | ±20V | - | 750mW (Ta) | 53mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
E SERIES POWER MOSFET TO-220AB,
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 3769 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 312W (Tc)
- Rds On (Max) @ Id, Vgs: 58mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock120 |
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MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 5V @ 250µA | 108 nC @ 20 V | 3769 pF @ 100 V | ±30V | - | 312W (Tc) | 58mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 10A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock4,959 |
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MOSFET (Metal Oxide) | 400 V | 10A (Tc) | 10V | 4V @ 250µA | 36 nC @ 10 V | 1030 pF @ 25 V | ±30V | - | 125W (Tc) | 550mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 75V 90A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 40 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 75 V | 90A (Tc) | - | 4V @ 250µA | 160 nC @ 10 V | 6460 pF @ 40 V | - | - | - | 4.8mOhm @ 20A, 10V | - | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 250V 3.4A/12.3A PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 12.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 125 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
- Rds On (Max) @ Id, Vgs: 173mOhm @ 3.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8S
- Package / Case: PowerPAK® 1212-8S
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 250 V | 3.4A (Ta), 12.3A (Tc) | 7.5V, 10V | 4V @ 250µA | 16 nC @ 10 V | 350 pF @ 125 V | ±20V | - | 5.1W (Ta), 65.8W (Tc) | 173mOhm @ 3.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S |
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Vishay Siliconix |
N-CHANNEL 40-V (D-S) MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock22,608 |
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MOSFET (Metal Oxide) | 40 V | 3A (Ta) | 4.5V, 10V | 3V @ 250µA | 15 nC @ 10 V | 540 pF @ 20 V | ±20V | - | 750mW (Ta) | 45mOhm @ 3.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 62A TO247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 344 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7379 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 625W (Tc)
- Rds On (Max) @ Id, Vgs: 52mOhm @ 32A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD
- Package / Case: TO-247-3
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Package: - |
Stock921 |
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MOSFET (Metal Oxide) | 650 V | 62A (Tc) | - | 4V @ 250µA | 344 nC @ 10 V | 7379 pF @ 100 V | ±30V | - | 625W (Tc) | 52mOhm @ 32A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 33.6A PPAK SO-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 33.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 33.6A (Tc) | - | 2.5V @ 250µA | 68 nC @ 10 V | 3800 pF @ 25 V | ±20V | - | 68W (Tc) | 30mOhm @ 8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
P-CHANNEL 80-V (D-S) MOSFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 2.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
- Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock20,232 |
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MOSFET (Metal Oxide) | 80 V | 1.2A (Ta), 2.2A (Tc) | 6V, 10V | 4V @ 250µA | 17 nC @ 10 V | 500 pF @ 40 V | ±20V | - | 760mW (Ta), 2.5W (Tc) | 270mOhm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 200V 11A D2PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 200 V | 11A (Tc) | 10V | 4V @ 250µA | 44 nC @ 10 V | 1200 pF @ 25 V | ±20V | - | 3W (Ta), 125W (Tc) | 500mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 20V 100A TO252AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock4,362 |
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MOSFET (Metal Oxide) | 20 V | 100A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 110 nC @ 10 V | 5500 pF @ 10 V | ±20V | - | 83W (Tc) | 3.5mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 150V 420MA SC70-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 420mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 2.6Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6
- Package / Case: 6-TSSOP, SC-88, SOT-363
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Package: - |
Stock2,919 |
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MOSFET (Metal Oxide) | 150 V | 420mA (Ta) | - | 4.5V @ 100µA | 6.3 nC @ 10 V | - | ±20V | - | 1W (Ta) | 2.6Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 | 6-TSSOP, SC-88, SOT-363 |
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Vishay Siliconix |
MOSFET N-CH 600V 4.3A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 29W (Tc)
- Rds On (Max) @ Id, Vgs: 700mOhm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Full Pack
- Package / Case: TO-220-3 Full Pack
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 4.3A (Tc) | 10V | 5V @ 250µA | 12 nC @ 10 V | 347 pF @ 100 V | ±30V | - | 29W (Tc) | 700mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 100V 15A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 88W (Tc)
- Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock15 |
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MOSFET (Metal Oxide) | 100 V | 15A (Tc) | - | 2V @ 250µA | 28 nC @ 5 V | 930 pF @ 25 V | ±10V | - | 88W (Tc) | 160mOhm @ 9A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
P-CHANNEL 60-V (D-S) 175C MOSFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5910 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock14,175 |
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MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 150 nC @ 10 V | 5910 pF @ 25 V | ±20V | - | 136W (Tc) | 15.5mOhm @ 17A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
N-CHANNEL 40-V (D-S) MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
- Rds On (Max) @ Id, Vgs: 51mOhm @ 3.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
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MOSFET (Metal Oxide) | 40 V | 3.2A (Ta), 4.3A (Tc) | 2.5V, 10V | 1.5V @ 250µA | 13 nC @ 10 V | 370 pF @ 20 V | ±12V | - | 960mW (Ta), 1.7W (Tc) | 51mOhm @ 3.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 4.5A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock9,960 |
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MOSFET (Metal Oxide) | 500 V | 4.5A (Tc) | 10V | 4V @ 250µA | 38 nC @ 10 V | 610 pF @ 25 V | ±20V | - | 74W (Tc) | 1.5Ohm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
N-CHANNEL 100-V (D-S) 175C MOSFE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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Package: - |
Stock27,000 |
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MOSFET (Metal Oxide) | 100 V | 48A (Tc) | 10V | 3.5V @ 250µA | 35 nC @ 10 V | 1700 pF @ 25 V | ±20V | - | 68W (Tc) | 14mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 100V 120A TO220AB
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 190 nC @ 10 V | 7000 pF @ 50 V | ±20V | - | 375W (Tc) | - | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 150V 4.4A/16.2A PPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 719 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
- Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8S
- Package / Case: PowerPAK® 1212-8S
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Package: - |
Stock27,993 |
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MOSFET (Metal Oxide) | 150 V | 4.4A (Ta), 16.2A (Tc) | 10V | 4V @ 250µA | 22 nC @ 10 V | 719 pF @ 75 V | ±20V | - | 5.1W (Ta), 65.8W (Tc) | 125mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S |
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Vishay Siliconix |
MOSFET N-CH 30V 32A/60A PPAK SO8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2455 pF @ 15 V
- Vgs (Max): +20V, -16V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 5W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 32A (Ta), 60A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 58 nC @ 10 V | 2455 pF @ 15 V | +20V, -16V | Schottky Diode (Body) | 5W (Ta), 50W (Tc) | 2.7mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 40V 100A PPAK SO-8DC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 20 V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8DC
- Package / Case: PowerPAK® SO-8
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Package: - |
Stock13,833 |
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MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 204 nC @ 10 V | 10500 pF @ 20 V | +20V, -16V | - | 125W (Tc) | 0.88mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 150V 128A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3425 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 150 V | 128A (Tc) | 7.5V, 10V | 5V @ 250µA | 95 nC @ 10 V | 3425 pF @ 75 V | ±20V | - | 375W (Tc) | 9.4mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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