Page 9 - Vishay Siliconix Products - Transistors - FETs, MOSFETs - Single

SQJ464EP-T2_GE3
Vishay Siliconix

MOSFET N-CH 60V 32A PPAK SO-8

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SI4155DY-T1-GE3
Vishay Siliconix

P-CHANNEL 30-V (D-S) MOSFET SO-8

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Stock9,453
IRFR420TRPBF-BE3
Vishay Siliconix

MOSFET N-CH 500V 2.4A DPAK

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Stock7,500
SIDR638DP-T1-RE3
Vishay Siliconix

N-CHANNEL 40-V (D-S) MOSFET

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Stock18,000
SISS54DN-T1-GE3
Vishay Siliconix

N-CHANNEL 30-V (D-S) MOSFET POWE

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Stock24,987
SQR100N04-3M8R_GE3
Vishay Siliconix

N-CHANNEL 40-V (D-S) 175C MOSFET

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SUM40012EL-GE3
Vishay Siliconix

MOSFET N-CH 40V 150A TO263

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Stock2,595
SQJ110EP-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 100 V (D-S)

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SQ2348CES-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 30 V (D-S)

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Stock7,110
V50382-E3
Vishay Siliconix

MOSFET N-CH 60V TO-247AC

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SI2333CDS-T1-BE3
Vishay Siliconix

P-CHANNEL 12-V (D-S) MOSFET

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Stock4,332
SIHA25N60EFL-GE3
Vishay Siliconix

N-CHANNEL 600V

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Stock2,991
SIHFR430ATR-GE3
Vishay Siliconix

MOSFET N-CH 500V 5A DPAK

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IRFR214PBF-BE3
Vishay Siliconix

MOSFET N-CH 250V 2.2A DPAK

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Stock8,547
IRFBG30PBF-BE3
Vishay Siliconix

MOSFET N-CH 1000V 3.1A TO220AB

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Stock4,149
SQJ138ELP-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 40 V (D-S)

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Stock7,983
SQ7415CENW-T1_GE3
Vishay Siliconix

AUTOMOTIVE P-CHANNEL 60-V (D-S)

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Stock38,799
SUD50P06-15-BE3
Vishay Siliconix

MOSFET P-CH 60V 50A DPAK

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Stock10,101
SIS496EDNT-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 50A PPAK1212-8

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SQJ142EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 40V 167A PPAK SO-8

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Stock12,600

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SQJ464EP-T2_GE3	Vishay Siliconix	MOSFET N-CH 60V 32A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2086 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 7.1A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	32A (Tc)	4.5V, 10V	2.5V @ 250µA	44 nC @ 10 V	2086 pF @ 30 V	±20V	-	45W (Tc)	17mOhm @ 7.1A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SI4155DY-T1-GE3	Vishay Siliconix	P-CHANNEL 30-V (D-S) MOSFET SO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 13.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock9,453	MOSFET (Metal Oxide)	30 V	10.2A (Ta), 13.6A (Tc)	4.5V, 10V	2.5V @ 250µA	50 nC @ 10 V	1870 pF @ 15 V	±25V	-	2.5W (Ta), 4.5W (Tc)	15mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
IRFR420TRPBF-BE3	Vishay Siliconix	MOSFET N-CH 500V 2.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,500	MOSFET (Metal Oxide)	500 V	2.4A (Tc)	10V	4V @ 250µA	19 nC @ 10 V	360 pF @ 25 V	±20V	-	2.5W (Ta), 42W (Tc)	3Ohm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIDR638DP-T1-RE3	Vishay Siliconix	N-CHANNEL 40-V (D-S) MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 20 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8DC Package / Case: PowerPAK® SO-8	Package: -	Stock18,000	MOSFET (Metal Oxide)	40 V	64.6A (Ta), 100A (Tc)	4.5V, 10V	2.3V @ 250µA	204 nC @ 10 V	10500 pF @ 20 V	+20V, -16V	-	6.25W (Ta), 125W (Tc)	0.88mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8DC	PowerPAK® SO-8
SISS54DN-T1-GE3	Vishay Siliconix	N-CHANNEL 30-V (D-S) MOSFET POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 51.1A (Ta), 185.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 15 V Vgs (Max): +16V, -12V FET Feature: - Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Rds On (Max) @ Id, Vgs: 1.06mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S	Package: -	Stock24,987	MOSFET (Metal Oxide)	30 V	51.1A (Ta), 185.6A (Tc)	4.5V, 10V	2.2V @ 250µA	72 nC @ 10 V	3450 pF @ 15 V	+16V, -12V	-	5W (Ta), 65.7W (Tc)	1.06mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8S	PowerPAK® 1212-8S
SQR100N04-3M8R_GE3	Vishay Siliconix	N-CHANNEL 40-V (D-S) 175C MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SUM40012EL-GE3	Vishay Siliconix	MOSFET N-CH 40V 150A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10930 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 1.67mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,595	MOSFET (Metal Oxide)	40 V	150A (Tc)	4.5V, 10V	2.5V @ 250µA	195 nC @ 10 V	10930 pF @ 20 V	±20V	-	150W (Tc)	1.67mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SQJ110EP-T1_GE3	Vishay Siliconix	AUTOMOTIVE N-CHANNEL 100 V (D-S) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	170A (Tc)	10V	3.5V @ 250µA	113 nC @ 10 V	6100 pF @ 25 V	±20V	-	500W (Tc)	6.3mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SQ2348CES-T1_GE3	Vishay Siliconix	AUTOMOTIVE N-CHANNEL 30 V (D-S) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock7,110	MOSFET (Metal Oxide)	30 V	8A (Tc)	4.5V, 10V	2.5V @ 250µA	14.5 nC @ 10 V	540 pF @ 15 V	±20V	-	3W (Tc)	24mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
V50382-E3	Vishay Siliconix	MOSFET N-CH 60V TO-247AC FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SI2333CDS-T1-BE3	Vishay Siliconix	P-CHANNEL 12-V (D-S) MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 7.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock4,332	MOSFET (Metal Oxide)	12 V	5.1A (Ta), 7.1A (Tc)	1.8V, 4.5V	1V @ 250µA	25 nC @ 4.5 V	1225 pF @ 6 V	±8V	-	1.25W (Ta), 2.5W (Tc)	35mOhm @ 5.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SIHA25N60EFL-GE3	Vishay Siliconix	N-CHANNEL 600V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: -	Stock2,991	MOSFET (Metal Oxide)	600 V	25A (Tc)	10V	5V @ 250µA	75 nC @ 10 V	2274 pF @ 100 V	±30V	-	39W (Tc)	146mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
SIHFR430ATR-GE3	Vishay Siliconix	MOSFET N-CH 500V 5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	5A (Tc)	10V	4.5V @ 250µA	24 nC @ 10 V	490 pF @ 25 V	±30V	-	110W (Tc)	1.7Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR214PBF-BE3	Vishay Siliconix	MOSFET N-CH 250V 2.2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock8,547	MOSFET (Metal Oxide)	250 V	2.2A (Tc)	-	4V @ 250µA	8.2 nC @ 10 V	140 pF @ 25 V	±20V	-	2.5W (Ta), 25W (Tc)	2Ohm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFBG30PBF-BE3	Vishay Siliconix	MOSFET N-CH 1000V 3.1A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock4,149	MOSFET (Metal Oxide)	1000 V	3.1A (Tc)	10V	4V @ 250µA	80 nC @ 10 V	980 pF @ 25 V	±20V	-	125W (Tc)	5Ohm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SQJ138ELP-T1_GE3	Vishay Siliconix	AUTOMOTIVE N-CHANNEL 40 V (D-S) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 315A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6685 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock7,983	MOSFET (Metal Oxide)	40 V	315A (Tc)	4.5V, 10V	2.2V @ 250µA	117 nC @ 10 V	6685 pF @ 25 V	±20V	-	500W (Tc)	1.5mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SQ7415CENW-T1_GE3	Vishay Siliconix	AUTOMOTIVE P-CHANNEL 60-V (D-S) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 53W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8W Package / Case: PowerPAK® 1212-8W	Package: -	Stock38,799	MOSFET (Metal Oxide)	60 V	16A (Tc)	4.5V, 10V	2.5V @ 250µA	38 nC @ 10 V	1385 pF @ 25 V	±20V	-	53W (Tc)	65mOhm @ 5.7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 1212-8W	PowerPAK® 1212-8W
SUD50P06-15-BE3	Vishay Siliconix	MOSFET P-CH 60V 50A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 113W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock10,101	MOSFET (Metal Oxide)	60 V	50A (Tc)	4.5V, 10V	3V @ 250µA	165 nC @ 10 V	4950 pF @ 25 V	±20V	-	2.5W (Ta), 113W (Tc)	15mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIS496EDNT-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 50A PPAK1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	50A (Tc)	4.5V, 10V	2.5V @ 250µA	45 nC @ 10 V	1515 pF @ 15 V	±20V	-	52W (Tc)	4.8mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
SQJ142EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 40V 167A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 167A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 191W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock12,600	MOSFET (Metal Oxide)	40 V	167A (Tc)	10V	3.5V @ 250µA	45 nC @ 10 V	2650 pF @ 25 V	±20V	-	191W (Tc)	3.6mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SQJQ402E-T1_GE3	Vishay Siliconix	MOSFET N-CH 40V 200A PPAK 8 X 8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: PowerPAK® 8 x 8	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	200A (Tc)	4.5V, 10V	2.5V @ 250µA	260 nC @ 10 V	13500 pF @ 20 V	±20V	-	150W (Tc)	1.7mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 8 x 8	PowerPAK® 8 x 8
SQM110P06-8M9L_GE3	Vishay Siliconix	MOSFET P-CH 60V 110A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7450 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	110A (Tc)	4.5V, 10V	2.5V @ 250µA	200 nC @ 10 V	7450 pF @ 25 V	±20V	-	230W (Tc)	8.9mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SQD50N04-09H-GE3	Vishay Siliconix	MOSFET N-CH 40V 50A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	50A (Tc)	-	5V @ 250µA	76 nC @ 10 V	4240 pF @ 25 V	-	-	-	9mOhm @ 20A, 10V	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR9024TRPBF-BE3	Vishay Siliconix	MOSFET P-CH 60V 8.8A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock10,494	MOSFET (Metal Oxide)	60 V	8.8A (Tc)	10V	4V @ 250µA	19 nC @ 10 V	570 pF @ 25 V	±20V	-	2.5W (Ta), 42W (Tc)	280mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHD3N50D-BE3	Vishay Siliconix	MOSFET N-CH 500V 3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	3A (Tc)	10V	5V @ 250µA	12 nC @ 10 V	175 pF @ 100 V	±30V	-	69W (Tc)	3.2Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
SQA600CEJW-T1_GE3	Vishay Siliconix	AUTOMOTIVE N-CHANNEL 80 V (D-S) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 13.6W (Tc) Rds On (Max) @ Id, Vgs: 54.6mOhm @ 3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerPAK®SC-70W-6 Package / Case: 6-PowerVDFN	Package: -	Stock14,811	MOSFET (Metal Oxide)	80 V	9A (Tc)	4.5V, 10V	2.5V @ 250µA	9 nC @ 10 V	540 pF @ 25 V	±20V	-	13.6W (Tc)	54.6mOhm @ 3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerPAK®SC-70W-6	6-PowerVDFN
SIRS4600DP-T1-RE3	Vishay Siliconix	N-CHANNEL 60 V (D-S) MOSFET POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 334A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7655 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.4W (Ta), 240W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock12	MOSFET (Metal Oxide)	60 V	58A (Ta), 334A (Tc)	7.5V, 10V	4V @ 250µA	162 nC @ 10 V	7655 pF @ 30 V	±20V	-	7.4W (Ta), 240W (Tc)	1.2mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SIA445EDJT-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 12A PPAK SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 19W (Tc) Rds On (Max) @ Id, Vgs: 16.7mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6	Package: -	Stock8,370	MOSFET (Metal Oxide)	20 V	12A (Tc)	2.5V, 4.5V	1.2V @ 250µA	69 nC @ 10 V	2180 pF @ 10 V	±12V	-	19W (Tc)	16.7mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6 Single	PowerPAK® SC-70-6