Page 163 - Vishay Siliconix Products - Transistors - FETs, MOSFETs - Single

SI5461EDC-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 4.5A CHIPFET

Package: 8-SMD, Flat Lead

Stock3,728
SI5449DC-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 3.1A 1206-8

Package: 8-SMD, Flat Lead

Stock4,720
SI5449DC-T1-E3
Vishay Siliconix

MOSFET P-CH 30V 3.1A 1206-8

Package: 8-SMD, Flat Lead

Stock133,200
SI5445BDC-T1-GE3
Vishay Siliconix

MOSFET P-CH 8V 5.2A 1206-8

Package: 8-SMD, Flat Lead

Stock2,304
SI5441DC-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 3.9A 1206-8

Package: 8-SMD, Flat Lead

Stock2,128
SI5441DC-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 3.9A 1206-8

Package: 8-SMD, Flat Lead

Stock3,896,664
SI5406DC-T1-GE3
Vishay Siliconix

MOSFET N-CH 12V 6.9A 1206-8

Package: 8-SMD, Flat Lead

Stock5,344
SI5402DC-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 4.9A 1206-8

Package: 8-SMD, Flat Lead

Stock5,856
SI5402DC-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 4.9A 1206-8

Package: 8-SMD, Flat Lead

Stock1,048,296
SI5401DC-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 5.2A 1206-8

Package: 8-SMD, Flat Lead

Stock72,000
SI4892DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 8.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock18,768
SI4892DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 8.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,481,688
SI4888DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 11A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,760
SI4886DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 9.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock9,084
SI4886DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 9.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock653,232
SI4880DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 13A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,144
SI4880DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 13A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock690,552
SI4876DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 14A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,216
SI4860DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 11A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,128
SI4858DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 13A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock30,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SI5461EDC-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 4.5A CHIPFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock3,728	MOSFET (Metal Oxide)	20V	4.5A (Ta)	1.8V, 4.5V	450mV @ 250µA (Min)	20nC @ 4.5V	-	±12V	-	1.3W (Ta)	45 mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	1206-8 ChipFET?	8-SMD, Flat Lead
SI5449DC-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 3.1A 1206-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock4,720	MOSFET (Metal Oxide)	30V	3.1A (Ta)	2.5V, 4.5V	600mV @ 250µA (Min)	11nC @ 4.5V	-	±12V	-	1.3W (Ta)	85 mOhm @ 3.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	1206-8 ChipFET?	8-SMD, Flat Lead
SI5449DC-T1-E3	Vishay Siliconix	MOSFET P-CH 30V 3.1A 1206-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock133,200	MOSFET (Metal Oxide)	30V	3.1A (Ta)	2.5V, 4.5V	600mV @ 250µA (Min)	11nC @ 4.5V	-	±12V	-	1.3W (Ta)	85 mOhm @ 3.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	1206-8 ChipFET?	8-SMD, Flat Lead
SI5445BDC-T1-GE3	Vishay Siliconix	MOSFET P-CH 8V 5.2A 1206-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 33 mOhm @ 5.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock2,304	MOSFET (Metal Oxide)	8V	5.2A (Ta)	1.8V, 4.5V	1V @ 250µA	21nC @ 4.5V	-	±8V	-	1.3W (Ta)	33 mOhm @ 5.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	1206-8 ChipFET?	8-SMD, Flat Lead
SI5441DC-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 3.9A 1206-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 55 mOhm @ 3.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock2,128	MOSFET (Metal Oxide)	20V	3.9A (Ta)	2.5V, 4.5V	1.4V @ 250µA	22nC @ 4.5V	-	±12V	-	1.3W (Ta)	55 mOhm @ 3.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	1206-8 ChipFET?	8-SMD, Flat Lead
SI5441DC-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 3.9A 1206-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 55 mOhm @ 3.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock3,896,664	MOSFET (Metal Oxide)	20V	3.9A (Ta)	2.5V, 4.5V	1.4V @ 250µA	22nC @ 4.5V	-	±12V	-	1.3W (Ta)	55 mOhm @ 3.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	1206-8 ChipFET?	8-SMD, Flat Lead
SI5406DC-T1-GE3	Vishay Siliconix	MOSFET N-CH 12V 6.9A 1206-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 600mV @ 1.2mA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock5,344	MOSFET (Metal Oxide)	12V	6.9A (Ta)	2.5V, 4.5V	600mV @ 1.2mA (Min)	20nC @ 4.5V	-	±8V	-	1.3W (Ta)	20 mOhm @ 6.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	1206-8 ChipFET?	8-SMD, Flat Lead
SI5402DC-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 4.9A 1206-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock5,856	MOSFET (Metal Oxide)	30V	4.9A (Ta)	4.5V, 10V	1V @ 250µA (Min)	20nC @ 10V	-	±20V	-	1.3W (Ta)	35 mOhm @ 4.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	1206-8 ChipFET?	8-SMD, Flat Lead
SI5402DC-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 4.9A 1206-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock1,048,296	MOSFET (Metal Oxide)	30V	4.9A (Ta)	4.5V, 10V	1V @ 250µA (Min)	20nC @ 10V	-	±20V	-	1.3W (Ta)	35 mOhm @ 4.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	1206-8 ChipFET?	8-SMD, Flat Lead
SI5401DC-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 5.2A 1206-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock72,000	MOSFET (Metal Oxide)	20V	5.2A (Ta)	1.8V, 4.5V	1V @ 250µA	25nC @ 4.5V	-	±8V	-	1.3W (Ta)	32 mOhm @ 5.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	1206-8 ChipFET?	8-SMD, Flat Lead
SI4892DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 8.8A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 12.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock18,768	MOSFET (Metal Oxide)	30V	8.8A (Ta)	4.5V, 10V	800mV @ 250µA (Min)	10.5nC @ 5V	-	±20V	-	1.6W (Ta)	12 mOhm @ 12.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4892DY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 8.8A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 12.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,481,688	MOSFET (Metal Oxide)	30V	8.8A (Ta)	4.5V, 10V	800mV @ 250µA (Min)	10.5nC @ 5V	-	±20V	-	1.6W (Ta)	12 mOhm @ 12.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4888DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 11A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,760	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	1.6V @ 250µA	24nC @ 5V	-	±20V	-	1.6W (Ta)	7 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4886DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 9.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock9,084	MOSFET (Metal Oxide)	30V	9.5A (Ta)	4.5V, 10V	800mV @ 250µA (Min)	20nC @ 5V	-	±20V	-	1.56W (Ta)	10 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4886DY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 9.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock653,232	MOSFET (Metal Oxide)	30V	9.5A (Ta)	4.5V, 10V	800mV @ 250µA (Min)	20nC @ 5V	-	±20V	-	1.56W (Ta)	10 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4880DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 13A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,144	MOSFET (Metal Oxide)	30V	-	4.5V, 10V	1.8V @ 250µA	25nC @ 5V	-	±25V	-	2.5W (Ta)	8.5 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4880DY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 13A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock690,552	MOSFET (Metal Oxide)	30V	-	4.5V, 10V	1.8V @ 250µA	25nC @ 5V	-	±25V	-	2.5W (Ta)	8.5 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4876DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 14A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 5 mOhm @ 21A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,216	MOSFET (Metal Oxide)	20V	14A (Ta)	2.5V, 4.5V	600mV @ 250µA (Min)	80nC @ 4.5V	-	±12V	-	1.6W (Ta)	5 mOhm @ 21A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4860DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 11A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,128	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	1V @ 250µA (Min)	18nC @ 4.5V	-	±20V	-	1.6W (Ta)	8 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4858DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 13A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 5.25 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock30,000	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V, 10V	1V @ 250µA (Min)	40nC @ 4.5V	-	±20V	-	1.6W (Ta)	5.25 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4858DY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 13A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 5.25 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock672,888	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V, 10V	1V @ 250µA (Min)	40nC @ 4.5V	-	±20V	-	1.6W (Ta)	5.25 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4850EY-T1	Vishay Siliconix	MOSFET N-CH 60V 6A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock123,480	MOSFET (Metal Oxide)	60V	6A (Ta)	4.5V, 10V	3V @ 250µA	27nC @ 10V	-	±20V	-	1.7W (Ta)	22 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4840DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V 10A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,696	MOSFET (Metal Oxide)	40V	10A (Ta)	4.5V, 10V	3V @ 250µA	28nC @ 5V	-	±20V	-	1.56W (Ta)	9 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4836DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 12V 17A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 400mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,744	MOSFET (Metal Oxide)	12V	17A (Ta)	1.8V, 4.5V	400mV @ 250µA (Min)	75nC @ 4.5V	-	±8V	-	1.6W (Ta)	3 mOhm @ 25A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4833ADY-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 4.6A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.93W (Ta), 2.75W (Tc) Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,240	MOSFET (Metal Oxide)	30V	4.6A (Tc)	4.5V, 10V	2.5V @ 250µA	15nC @ 10V	750pF @ 15V	±20V	Schottky Diode (Isolated)	1.93W (Ta), 2.75W (Tc)	72 mOhm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4831BDY-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 6.6A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 15V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta), 3.3W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,528	MOSFET (Metal Oxide)	30V	6.6A (Tc)	4.5V, 10V	3V @ 250µA	26nC @ 10V	625pF @ 15V	±20V	Schottky Diode (Isolated)	2W (Ta), 3.3W (Tc)	42 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4831BDY-T1-E3	Vishay Siliconix	MOSFET P-CH 30V 6.6A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 15V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta), 3.3W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,392	MOSFET (Metal Oxide)	30V	6.6A (Tc)	4.5V, 10V	3V @ 250µA	26nC @ 10V	625pF @ 15V	±20V	Schottky Diode (Isolated)	2W (Ta), 3.3W (Tc)	42 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4688DY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 8.9A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock15,672	MOSFET (Metal Oxide)	30V	8.9A (Ta)	4.5V, 10V	3V @ 250µA	38nC @ 10V	1580pF @ 15V	±20V	-	1.4W (Ta)	11 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)